DE60101248D1 - Zwischenspeicherzelle mit Maskierung und gleicher Anzahl von N-Kanal Transistoren und P-Kanal Transistoren - Google Patents
Zwischenspeicherzelle mit Maskierung und gleicher Anzahl von N-Kanal Transistoren und P-Kanal TransistorenInfo
- Publication number
- DE60101248D1 DE60101248D1 DE60101248T DE60101248T DE60101248D1 DE 60101248 D1 DE60101248 D1 DE 60101248D1 DE 60101248 T DE60101248 T DE 60101248T DE 60101248 T DE60101248 T DE 60101248T DE 60101248 D1 DE60101248 D1 DE 60101248D1
- Authority
- DE
- Germany
- Prior art keywords
- channel transistors
- masking
- same number
- buffer cell
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0011242A FR2813698B1 (fr) | 2000-09-04 | 2000-09-04 | Cellule cache a masquage |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60101248D1 true DE60101248D1 (de) | 2003-12-24 |
Family
ID=8853941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60101248T Expired - Lifetime DE60101248D1 (de) | 2000-09-04 | 2001-09-03 | Zwischenspeicherzelle mit Maskierung und gleicher Anzahl von N-Kanal Transistoren und P-Kanal Transistoren |
Country Status (4)
Country | Link |
---|---|
US (1) | US6995997B2 (de) |
EP (1) | EP1187142B1 (de) |
DE (1) | DE60101248D1 (de) |
FR (1) | FR2813698B1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2342575A1 (en) * | 2001-04-03 | 2002-10-03 | Mosaid Technologies Incorporated | Content addressable memory cell |
US6888730B2 (en) | 2001-04-03 | 2005-05-03 | Mosaid Technologies Incorporated | Content addressable memory cell |
US7136308B2 (en) * | 2004-11-01 | 2006-11-14 | Sun Microsystems, Inc. | Efficient method of data transfer between register files and memories |
FR2888387A1 (fr) | 2005-07-05 | 2007-01-12 | St Microelectronics Sa | Cellule de memoire cam associative et matrice de memoire cam constituee d'un reseau de telles cellules de memoire |
HUE041930T2 (hu) * | 2007-03-27 | 2019-06-28 | Basf Se | Eljárás diizocianátok színtelen izocianurátjainak elõállítására |
US9947406B2 (en) * | 2015-02-23 | 2018-04-17 | Qualcomm Incorporated | Dynamic tag compare circuits employing P-type field-effect transistor (PFET)-dominant evaluation circuits for reduced evaluation time, and related systems and methods |
CN111564167B (zh) * | 2020-04-22 | 2023-04-07 | 中国科学院上海微系统与信息技术研究所 | 存储单元、晶体管的制备方法及存储单元的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01220293A (ja) * | 1988-02-29 | 1989-09-01 | Nec Corp | 連想記憶回路 |
WO1994024672A1 (en) * | 1993-04-19 | 1994-10-27 | Oki Electric Industry Co., Ltd. | Circuit for decoding variable-length code, and system for decoding variable-length code which uses the circuit |
US5422838A (en) * | 1993-10-25 | 1995-06-06 | At&T Corp. | Content-addressable memory with programmable field masking |
JPH087580A (ja) * | 1994-06-23 | 1996-01-12 | Hitachi Ltd | 半導体記憶装置および情報処理装置 |
JP3191737B2 (ja) * | 1997-08-29 | 2001-07-23 | 日本電気株式会社 | ルータを有するネットワークシステムおよび改良されたルータおよびそのルータに用いられる連想メモリ |
US6044005A (en) * | 1999-02-03 | 2000-03-28 | Sibercore Technologies Incorporated | Content addressable memory storage device |
US6480931B1 (en) * | 1999-11-05 | 2002-11-12 | International Business Machines Corporation | Content addressable storage apparatus and register mapper architecture |
US6341079B1 (en) * | 2001-05-23 | 2002-01-22 | International Business Machines Corporation | Content addressable memory device |
-
2000
- 2000-09-04 FR FR0011242A patent/FR2813698B1/fr not_active Expired - Fee Related
-
2001
- 2001-09-03 DE DE60101248T patent/DE60101248D1/de not_active Expired - Lifetime
- 2001-09-03 EP EP01410110A patent/EP1187142B1/de not_active Expired - Lifetime
-
2004
- 2004-06-04 US US10/862,057 patent/US6995997B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040252536A1 (en) | 2004-12-16 |
EP1187142B1 (de) | 2003-11-19 |
EP1187142A1 (de) | 2002-03-13 |
US6995997B2 (en) | 2006-02-07 |
FR2813698A1 (fr) | 2002-03-08 |
FR2813698B1 (fr) | 2002-11-29 |
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DE60101248D1 (de) | Zwischenspeicherzelle mit Maskierung und gleicher Anzahl von N-Kanal Transistoren und P-Kanal Transistoren | |
DE60124048D1 (de) | Feld-effekt-transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |