DE60024376D1 - Field effect semiconductor device - Google Patents
Field effect semiconductor deviceInfo
- Publication number
- DE60024376D1 DE60024376D1 DE60024376T DE60024376T DE60024376D1 DE 60024376 D1 DE60024376 D1 DE 60024376D1 DE 60024376 T DE60024376 T DE 60024376T DE 60024376 T DE60024376 T DE 60024376T DE 60024376 D1 DE60024376 D1 DE 60024376D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- field effect
- effect semiconductor
- field
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25605999A JP3707766B2 (en) | 1999-09-09 | 1999-09-09 | Field effect semiconductor device |
| JP25605999 | 1999-09-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60024376D1 true DE60024376D1 (en) | 2006-01-05 |
| DE60024376T2 DE60024376T2 (en) | 2006-08-03 |
Family
ID=17287342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60024376T Expired - Lifetime DE60024376T2 (en) | 1999-09-09 | 2000-09-11 | Field effect semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7208777B1 (en) |
| EP (1) | EP1083608B1 (en) |
| JP (1) | JP3707766B2 (en) |
| DE (1) | DE60024376T2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005249407A (en) * | 2004-03-01 | 2005-09-15 | Yokogawa Electric Corp | Micro-array substrate for biopolymer, hybridization device and hybridization method |
| JP4854980B2 (en) * | 2005-03-30 | 2012-01-18 | 住友電工デバイス・イノベーション株式会社 | Switch circuit and semiconductor device manufacturing method |
| US8680580B2 (en) * | 2007-11-19 | 2014-03-25 | Renesas Electronics Corporation | Field effect transistor and process for manufacturing same |
| US9685509B2 (en) | 2013-07-30 | 2017-06-20 | Samsung Electronics Co., Ltd. | Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions |
| US9917158B2 (en) | 2013-07-30 | 2018-03-13 | Samsung Electronics Co., Ltd. | Device contact structures including heterojunctions for low contact resistance |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3069106B2 (en) | 1989-04-27 | 2000-07-24 | 株式会社日立製作所 | Semiconductor device |
| JPH07147395A (en) | 1991-11-27 | 1995-06-06 | Sanyo Electric Co Ltd | Field effect type semiconductor device |
| JPH06333956A (en) * | 1992-08-26 | 1994-12-02 | Sanyo Electric Co Ltd | Field effect semiconductor device |
| JPH06252175A (en) | 1993-02-24 | 1994-09-09 | Sony Corp | Transistor having high electron mobility |
| JP3616447B2 (en) | 1996-02-27 | 2005-02-02 | 富士通株式会社 | Semiconductor device |
| JPH1056168A (en) | 1996-08-08 | 1998-02-24 | Mitsubishi Electric Corp | Field-effect transistor |
| JPH11177079A (en) | 1997-12-15 | 1999-07-02 | Nec Corp | Field-effect transistor |
| JP3707765B2 (en) | 1999-09-09 | 2005-10-19 | 株式会社村田製作所 | Field effect semiconductor device |
-
1999
- 1999-09-09 JP JP25605999A patent/JP3707766B2/en not_active Expired - Lifetime
-
2000
- 2000-09-11 DE DE60024376T patent/DE60024376T2/en not_active Expired - Lifetime
- 2000-09-11 US US09/658,732 patent/US7208777B1/en not_active Expired - Lifetime
- 2000-09-11 EP EP00119779A patent/EP1083608B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001085672A (en) | 2001-03-30 |
| DE60024376T2 (en) | 2006-08-03 |
| US7208777B1 (en) | 2007-04-24 |
| JP3707766B2 (en) | 2005-10-19 |
| EP1083608A1 (en) | 2001-03-14 |
| EP1083608B1 (en) | 2005-11-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |