DE60011277D1 - Lichtwellenleiter und herstellungsverfahren - Google Patents
Lichtwellenleiter und herstellungsverfahrenInfo
- Publication number
- DE60011277D1 DE60011277D1 DE60011277T DE60011277T DE60011277D1 DE 60011277 D1 DE60011277 D1 DE 60011277D1 DE 60011277 T DE60011277 T DE 60011277T DE 60011277 T DE60011277 T DE 60011277T DE 60011277 D1 DE60011277 D1 DE 60011277D1
- Authority
- DE
- Germany
- Prior art keywords
- optical path
- locations
- refractive index
- top layer
- altering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IE990793 | 1999-09-23 | ||
IE990793 | 1999-09-23 | ||
PCT/IE2000/000110 WO2001022543A1 (en) | 1999-09-23 | 2000-09-25 | An optical waveguide and a method for providing an optical waveguide |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60011277D1 true DE60011277D1 (de) | 2004-07-08 |
DE60011277T2 DE60011277T2 (de) | 2005-06-23 |
Family
ID=11042129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60011277T Expired - Lifetime DE60011277T2 (de) | 1999-09-23 | 2000-09-25 | Lichtwellenleiter und herstellungsverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US6978057B1 (de) |
EP (1) | EP1214763B1 (de) |
AT (1) | ATE268511T1 (de) |
AU (1) | AU7550000A (de) |
DE (1) | DE60011277T2 (de) |
IE (1) | IES20000772A2 (de) |
WO (1) | WO2001022543A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7138621B2 (en) * | 2002-05-08 | 2006-11-21 | Virginia Tech Intellectual Properties, Inc. | Optical fiber sensors based on pressure-induced temporal periodic variations in refractive index |
IES20030516A2 (en) * | 2003-07-11 | 2004-10-06 | Eblana Photonics Ltd | Semiconductor laser and method of manufacture |
WO2006008724A1 (en) * | 2004-07-16 | 2006-01-26 | University College Cork - National University Of Ireland, Cork | Method for designing a semiconductor laser with intracavity reflecting features, semiconductor laser and method of fabrication thereof |
WO2006008269A1 (en) * | 2004-07-23 | 2006-01-26 | Eblana Photonics Ltd. | Single mode laser |
US20080192781A1 (en) * | 2004-09-03 | 2008-08-14 | Eblana Photonics Limited | Semiconductor Light Emitting Device |
TWI262639B (en) * | 2005-06-16 | 2006-09-21 | Ind Tech Res Inst | Semiconductor laser device |
IES20050574A2 (en) * | 2005-08-31 | 2007-02-21 | Eblana Photonics Ltd | Semiconductor laser and method of manufacture |
IES20050587A2 (en) * | 2005-09-08 | 2007-02-21 | Eblana Photonics Ltd | Multi-stripe laser diode designs which exhibit a high degree of manafacturability |
WO2008035321A2 (en) * | 2006-09-20 | 2008-03-27 | The Provost, Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin | Multisection ld having a ridge with voids for longitudinal mode control |
GB2465754B (en) * | 2008-11-26 | 2011-02-09 | Univ Dublin City | A semiconductor optical amplifier with a reduced noise figure |
JP2011253977A (ja) * | 2010-06-03 | 2011-12-15 | Mitsubishi Electric Corp | Dbrレーザ |
WO2013055396A1 (en) * | 2011-10-14 | 2013-04-18 | Kotura, Inc. | Reduction of mode hopping in a laser cavity |
CN103199435B (zh) * | 2013-03-25 | 2015-06-10 | 中国科学院半导体研究所 | 超低发散角倾斜光束的单纵模人工微结构激光器 |
CN103259188B (zh) * | 2013-05-02 | 2015-06-24 | 中国科学院半导体研究所 | 低发散角单纵模边发射光子晶体激光器 |
US20210255378A1 (en) * | 2020-02-19 | 2021-08-19 | Profusa, Inc. | Optical filter device, system, and methods for improved optical rejection of high angle of incidence (aoi) light |
DE102020133177A1 (de) | 2020-12-11 | 2022-06-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Licht emittierender halbleiterchip und verfahren zur herstellung eines licht emittierenden halbleiterchips |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2161612B (en) * | 1984-07-11 | 1988-02-03 | Stc Plc | Optical fibre transmission systems |
JPS63305582A (ja) * | 1987-06-05 | 1988-12-13 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
DE3914000C2 (de) | 1989-04-27 | 1994-04-14 | Siemens Ag | Verfahren zum Herstellen einer aufgerauhten Aluminiumfolie |
DE3914001A1 (de) * | 1989-04-27 | 1990-10-31 | Siemens Ag | Halbleiterlaser mit eingepraegtem modenspektrum und verfahren zu dessen herstellung |
US5177758A (en) * | 1989-06-14 | 1993-01-05 | Hitachi, Ltd. | Semiconductor laser device with plural active layers and changing optical properties |
US4976539A (en) * | 1989-08-29 | 1990-12-11 | David Sarnoff Research Center, Inc. | Diode laser array |
JP3263949B2 (ja) * | 1991-02-25 | 2002-03-11 | 日本電気株式会社 | 光集積回路の製造方法 |
US5712715A (en) * | 1992-12-23 | 1998-01-27 | Lucent Technologies Inc. | Optical transmission system with spatially-varying Bragg reflector |
DE69613999T2 (de) * | 1995-12-12 | 2002-04-04 | British Telecommunications P.L.C., London | Herstellung eines brechzahlgitters |
JP3929495B2 (ja) * | 1996-01-18 | 2007-06-13 | ブリティッシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニー | 光感応性屈折率クラッドを備えた光導波路 |
US5717799A (en) * | 1996-10-10 | 1998-02-10 | Northern Telecom Limited | Optical waveguide filters |
US5870512A (en) * | 1997-05-30 | 1999-02-09 | Sdl, Inc. | Optimized interferometrically modulated array source |
US6330388B1 (en) * | 1999-01-27 | 2001-12-11 | Northstar Photonics, Inc. | Method and apparatus for waveguide optics and devices |
-
2000
- 2000-09-25 WO PCT/IE2000/000110 patent/WO2001022543A1/en active IP Right Grant
- 2000-09-25 EP EP00964578A patent/EP1214763B1/de not_active Expired - Lifetime
- 2000-09-25 AT AT00964578T patent/ATE268511T1/de not_active IP Right Cessation
- 2000-09-25 DE DE60011277T patent/DE60011277T2/de not_active Expired - Lifetime
- 2000-09-25 IE IE20000772A patent/IES20000772A2/en not_active IP Right Cessation
- 2000-09-25 AU AU75500/00A patent/AU7550000A/en not_active Abandoned
- 2000-09-25 US US10/088,758 patent/US6978057B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE60011277T2 (de) | 2005-06-23 |
EP1214763A1 (de) | 2002-06-19 |
ATE268511T1 (de) | 2004-06-15 |
WO2001022543A1 (en) | 2001-03-29 |
IES20000772A2 (en) | 2001-04-04 |
EP1214763B1 (de) | 2004-06-02 |
AU7550000A (en) | 2001-04-24 |
US6978057B1 (en) | 2005-12-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |