DE60011277D1 - Lichtwellenleiter und herstellungsverfahren - Google Patents

Lichtwellenleiter und herstellungsverfahren

Info

Publication number
DE60011277D1
DE60011277D1 DE60011277T DE60011277T DE60011277D1 DE 60011277 D1 DE60011277 D1 DE 60011277D1 DE 60011277 T DE60011277 T DE 60011277T DE 60011277 T DE60011277 T DE 60011277T DE 60011277 D1 DE60011277 D1 DE 60011277D1
Authority
DE
Germany
Prior art keywords
optical path
locations
refractive index
top layer
altering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60011277T
Other languages
English (en)
Other versions
DE60011277T2 (de
Inventor
Christopher O'gorman
Paul Mcevoy
David Mcdonald
Paul Logue
Michel Landais
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin
Original Assignee
College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin filed Critical College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin
Application granted granted Critical
Publication of DE60011277D1 publication Critical patent/DE60011277D1/de
Publication of DE60011277T2 publication Critical patent/DE60011277T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651Mode control
    • H01S5/0653Mode suppression, e.g. specific multimode
    • H01S5/0654Single longitudinal mode emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017Waveguide having a void for insertion of materials to change optical properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Couplings Of Light Guides (AREA)
DE60011277T 1999-09-23 2000-09-25 Lichtwellenleiter und herstellungsverfahren Expired - Lifetime DE60011277T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IE990793 1999-09-23
IE990793 1999-09-23
PCT/IE2000/000110 WO2001022543A1 (en) 1999-09-23 2000-09-25 An optical waveguide and a method for providing an optical waveguide

Publications (2)

Publication Number Publication Date
DE60011277D1 true DE60011277D1 (de) 2004-07-08
DE60011277T2 DE60011277T2 (de) 2005-06-23

Family

ID=11042129

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60011277T Expired - Lifetime DE60011277T2 (de) 1999-09-23 2000-09-25 Lichtwellenleiter und herstellungsverfahren

Country Status (7)

Country Link
US (1) US6978057B1 (de)
EP (1) EP1214763B1 (de)
AT (1) ATE268511T1 (de)
AU (1) AU7550000A (de)
DE (1) DE60011277T2 (de)
IE (1) IES20000772A2 (de)
WO (1) WO2001022543A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7138621B2 (en) * 2002-05-08 2006-11-21 Virginia Tech Intellectual Properties, Inc. Optical fiber sensors based on pressure-induced temporal periodic variations in refractive index
IES20030516A2 (en) * 2003-07-11 2004-10-06 Eblana Photonics Ltd Semiconductor laser and method of manufacture
WO2006008724A1 (en) * 2004-07-16 2006-01-26 University College Cork - National University Of Ireland, Cork Method for designing a semiconductor laser with intracavity reflecting features, semiconductor laser and method of fabrication thereof
WO2006008269A1 (en) * 2004-07-23 2006-01-26 Eblana Photonics Ltd. Single mode laser
US20080192781A1 (en) * 2004-09-03 2008-08-14 Eblana Photonics Limited Semiconductor Light Emitting Device
TWI262639B (en) * 2005-06-16 2006-09-21 Ind Tech Res Inst Semiconductor laser device
IES20050574A2 (en) * 2005-08-31 2007-02-21 Eblana Photonics Ltd Semiconductor laser and method of manufacture
IES20050587A2 (en) * 2005-09-08 2007-02-21 Eblana Photonics Ltd Multi-stripe laser diode designs which exhibit a high degree of manafacturability
WO2008035321A2 (en) * 2006-09-20 2008-03-27 The Provost, Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin Multisection ld having a ridge with voids for longitudinal mode control
GB2465754B (en) * 2008-11-26 2011-02-09 Univ Dublin City A semiconductor optical amplifier with a reduced noise figure
JP2011253977A (ja) * 2010-06-03 2011-12-15 Mitsubishi Electric Corp Dbrレーザ
WO2013055396A1 (en) * 2011-10-14 2013-04-18 Kotura, Inc. Reduction of mode hopping in a laser cavity
CN103199435B (zh) * 2013-03-25 2015-06-10 中国科学院半导体研究所 超低发散角倾斜光束的单纵模人工微结构激光器
CN103259188B (zh) * 2013-05-02 2015-06-24 中国科学院半导体研究所 低发散角单纵模边发射光子晶体激光器
US20210255378A1 (en) * 2020-02-19 2021-08-19 Profusa, Inc. Optical filter device, system, and methods for improved optical rejection of high angle of incidence (aoi) light
DE102020133177A1 (de) 2020-12-11 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierender halbleiterchip und verfahren zur herstellung eines licht emittierenden halbleiterchips

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2161612B (en) * 1984-07-11 1988-02-03 Stc Plc Optical fibre transmission systems
JPS63305582A (ja) * 1987-06-05 1988-12-13 Matsushita Electric Ind Co Ltd 半導体レ−ザ
DE3914000C2 (de) 1989-04-27 1994-04-14 Siemens Ag Verfahren zum Herstellen einer aufgerauhten Aluminiumfolie
DE3914001A1 (de) * 1989-04-27 1990-10-31 Siemens Ag Halbleiterlaser mit eingepraegtem modenspektrum und verfahren zu dessen herstellung
US5177758A (en) * 1989-06-14 1993-01-05 Hitachi, Ltd. Semiconductor laser device with plural active layers and changing optical properties
US4976539A (en) * 1989-08-29 1990-12-11 David Sarnoff Research Center, Inc. Diode laser array
JP3263949B2 (ja) * 1991-02-25 2002-03-11 日本電気株式会社 光集積回路の製造方法
US5712715A (en) * 1992-12-23 1998-01-27 Lucent Technologies Inc. Optical transmission system with spatially-varying Bragg reflector
DE69613999T2 (de) * 1995-12-12 2002-04-04 British Telecommunications P.L.C., London Herstellung eines brechzahlgitters
JP3929495B2 (ja) * 1996-01-18 2007-06-13 ブリティッシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニー 光感応性屈折率クラッドを備えた光導波路
US5717799A (en) * 1996-10-10 1998-02-10 Northern Telecom Limited Optical waveguide filters
US5870512A (en) * 1997-05-30 1999-02-09 Sdl, Inc. Optimized interferometrically modulated array source
US6330388B1 (en) * 1999-01-27 2001-12-11 Northstar Photonics, Inc. Method and apparatus for waveguide optics and devices

Also Published As

Publication number Publication date
DE60011277T2 (de) 2005-06-23
EP1214763A1 (de) 2002-06-19
ATE268511T1 (de) 2004-06-15
WO2001022543A1 (en) 2001-03-29
IES20000772A2 (en) 2001-04-04
EP1214763B1 (de) 2004-06-02
AU7550000A (en) 2001-04-24
US6978057B1 (en) 2005-12-20

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