DE59814320D1 - Method for producing layer-like structures on a semiconductor substrate, semiconductor substrate and semiconductor components produced by the method - Google Patents

Method for producing layer-like structures on a semiconductor substrate, semiconductor substrate and semiconductor components produced by the method

Info

Publication number
DE59814320D1
DE59814320D1 DE59814320T DE59814320T DE59814320D1 DE 59814320 D1 DE59814320 D1 DE 59814320D1 DE 59814320 T DE59814320 T DE 59814320T DE 59814320 T DE59814320 T DE 59814320T DE 59814320 D1 DE59814320 D1 DE 59814320D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
semiconductor
structures
components produced
producing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE59814320T
Other languages
German (de)
Inventor
Rolf Brendel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19730975A external-priority patent/DE19730975A1/en
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority claimed from PCT/EP1998/003992 external-priority patent/WO1999001893A2/en
Application granted granted Critical
Publication of DE59814320D1 publication Critical patent/DE59814320D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
DE59814320T 1997-06-30 1998-06-30 Method for producing layer-like structures on a semiconductor substrate, semiconductor substrate and semiconductor components produced by the method Expired - Lifetime DE59814320D1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19727791 1997-06-30
DE19730975A DE19730975A1 (en) 1997-06-30 1997-07-18 Porous material especially single crystal silicon layer production
DE19758300 1997-12-31
PCT/EP1998/003992 WO1999001893A2 (en) 1997-06-30 1998-06-30 Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method

Publications (1)

Publication Number Publication Date
DE59814320D1 true DE59814320D1 (en) 2009-01-02

Family

ID=40076291

Family Applications (1)

Application Number Title Priority Date Filing Date
DE59814320T Expired - Lifetime DE59814320D1 (en) 1997-06-30 1998-06-30 Method for producing layer-like structures on a semiconductor substrate, semiconductor substrate and semiconductor components produced by the method

Country Status (2)

Country Link
JP (1) JP5637473B2 (en)
DE (1) DE59814320D1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5561293B2 (en) * 2012-03-13 2014-07-30 ウシオ電機株式会社 Dye-sensitized solar cell

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2994837B2 (en) * 1992-01-31 1999-12-27 キヤノン株式会社 Semiconductor substrate flattening method, semiconductor substrate manufacturing method, and semiconductor substrate
JP3257580B2 (en) * 1994-03-10 2002-02-18 キヤノン株式会社 Manufacturing method of semiconductor substrate
JP3381443B2 (en) * 1995-02-02 2003-02-24 ソニー株式会社 Method for separating semiconductor layer from substrate, method for manufacturing semiconductor device, and method for manufacturing SOI substrate
JP3777668B2 (en) * 1996-09-04 2006-05-24 ソニー株式会社 Method for manufacturing thin film solar cell
JPH10326758A (en) * 1997-03-26 1998-12-08 Canon Inc Formation of thin film

Also Published As

Publication number Publication date
JP5637473B2 (en) 2014-12-10
JP2010045391A (en) 2010-02-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition