DE58909255D1 - Semiconductor memory arrangement with capacitors with two electrodes arranged in a trench and method for their production. - Google Patents
Semiconductor memory arrangement with capacitors with two electrodes arranged in a trench and method for their production.Info
- Publication number
- DE58909255D1 DE58909255D1 DE58909255T DE58909255T DE58909255D1 DE 58909255 D1 DE58909255 D1 DE 58909255D1 DE 58909255 T DE58909255 T DE 58909255T DE 58909255 T DE58909255 T DE 58909255T DE 58909255 D1 DE58909255 D1 DE 58909255D1
- Authority
- DE
- Germany
- Prior art keywords
- trench
- capacitor
- capacitors
- semiconductor memory
- memory arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The arrangement provided contains memory cells consisting of MOS transistors and trench capacitors, the trench (4) being etched so as to overlap with the peripheral region of the field oxide (3) insulating the cells. The inside wall of the trench is provided with an insulating layer (7) and the electrodes (10, 12) of the capacitor consist, of two conducting layers which have been deposited both of which are constructed perpendicularly in the trench (so-called stacked trench capacitor). The first capacitor electrode (10) is connected to the source region (14) of the selection transistor through a side opening in the inside-wall insulation layer (7) at the upper edge of the trench. The first electrode (10) is constructed as a spacer completely inside the trench (4). The method provided can be used to produce the trench contact (9) either in a self-aligned manner or by simple photographic techniques. The semiconductor memory arrangement can be used for 16 M memories. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP89109158A EP0399060B1 (en) | 1989-05-22 | 1989-05-22 | Semiconductor memory arrangement using capacitors with two electrodes situated inside a groove, and method of producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE58909255D1 true DE58909255D1 (en) | 1995-06-29 |
Family
ID=8201385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE58909255T Expired - Fee Related DE58909255D1 (en) | 1989-05-22 | 1989-05-22 | Semiconductor memory arrangement with capacitors with two electrodes arranged in a trench and method for their production. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0399060B1 (en) |
JP (1) | JP3190659B2 (en) |
KR (1) | KR900019237A (en) |
AT (1) | ATE123174T1 (en) |
DE (1) | DE58909255D1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04328860A (en) * | 1991-04-30 | 1992-11-17 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
DE4204298C1 (en) * | 1992-02-13 | 1993-03-04 | Siemens Ag, 8000 Muenchen, De | |
DE29722439U1 (en) * | 1997-12-18 | 1998-05-07 | Siemens Ag | Semiconductor memory and implantation mask |
US6978452B2 (en) | 2003-04-02 | 2005-12-20 | Beach Unlimited Llc | Upgrading digital media servers |
DE102007009383A1 (en) * | 2007-02-20 | 2008-08-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Semiconductor arrangement and method for its production |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5896107U (en) * | 1981-12-22 | 1983-06-30 | 株式会社アルフレツクスジヤパン | Mounting structure of supporting legs on desk |
EP0164829B1 (en) * | 1984-04-19 | 1988-09-28 | Nippon Telegraph And Telephone Corporation | Semiconductor memory device and method of manufacturing the same |
EP0180026B1 (en) * | 1984-10-31 | 1992-01-08 | Texas Instruments Incorporated | Dram cell and method |
JPS61179568A (en) * | 1984-12-29 | 1986-08-12 | Fujitsu Ltd | Manufacture of semiconductor memory device |
JPS61258468A (en) * | 1985-05-13 | 1986-11-15 | Hitachi Ltd | Semiconductor memory device and manufacture of the same |
JPS6427252A (en) * | 1987-04-13 | 1989-01-30 | Nec Corp | Semiconductor storage device |
JPS645052A (en) * | 1987-06-29 | 1989-01-10 | Mitsubishi Electric Corp | Capacitor cell of semiconductor storage device |
JPH0444120Y2 (en) * | 1988-09-05 | 1992-10-19 |
-
1989
- 1989-05-22 EP EP89109158A patent/EP0399060B1/en not_active Expired - Lifetime
- 1989-05-22 DE DE58909255T patent/DE58909255D1/en not_active Expired - Fee Related
- 1989-05-22 AT AT89109158T patent/ATE123174T1/en active
-
1990
- 1990-05-18 JP JP12896490A patent/JP3190659B2/en not_active Expired - Fee Related
- 1990-05-22 KR KR1019900007316A patent/KR900019237A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JP3190659B2 (en) | 2001-07-23 |
EP0399060B1 (en) | 1995-05-24 |
JPH0319362A (en) | 1991-01-28 |
KR900019237A (en) | 1990-12-24 |
ATE123174T1 (en) | 1995-06-15 |
EP0399060A1 (en) | 1990-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |