DE584009C - Process for making front wall barrier photocells - Google Patents

Process for making front wall barrier photocells

Info

Publication number
DE584009C
DE584009C DE1930584009D DE584009DA DE584009C DE 584009 C DE584009 C DE 584009C DE 1930584009 D DE1930584009 D DE 1930584009D DE 584009D A DE584009D A DE 584009DA DE 584009 C DE584009 C DE 584009C
Authority
DE
Germany
Prior art keywords
copper oxide
electrode
front wall
wall barrier
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1930584009D
Other languages
German (de)
Inventor
Dr Emil Duhme
Walter Schottky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of DE584009C publication Critical patent/DE584009C/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/165—Reduction of the copper oxide, treatment of the oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)

Description

AUSGEGEBEN AM
Ϊ3. SEPTEMBER 1933ISSUED ON
Ϊ3. SEPTEMBER 1933

REICHSPATENTAMTREICH PATENT OFFICE

PATENTSCHRIFTPATENT LETTERING

M584009 KLASSE 21 g GRUPPE M 584009 CLASS 21 g GROUP

21g S 874.21g S 874.

Patentiert im Deutschen Reiche vom 7. August 1930 abPatented in the German Empire on August 7, 1930

Die Erfindung betrifft ein Herstellungsverfahren von Sperrschicht-Vorderwandzellen, bei denen Kupferoxydul als Halbleiter benutzt wird. Es wird ein neues Verfahren angegeben, um die Oberfläche des Kupferoxyduls vorzubehandeln, auf der die Elektrode angebracht wird, an deren Berührungsfläche mit dem Kupferoxydul die lichtelektrische Wirksamkeit ihren Sitz hat. Beim AuftreffenThe invention relates to a method of manufacturing barrier front wall cells, in which copper oxide is used as a semiconductor. A new procedure is specified, to pre-treat the surface of the copper oxide on which the electrode will be placed is attached, at the contact surface with the copper oxide the photoelectric Effectiveness has its seat. Upon impact

ίο von Licht auf diese Berührungsfläche entsteht eine elektromotorische Kraft, deren Größe dadurch gesteigert wird, daß das neue Verfahren zur Vorbehandlung der Kupferoxydulfläche angewandt wird.ίο arises from light on this contact surface an electromotive force, the magnitude of which is increased by the new method is used to pretreat the copper oxide surface.

Die Oberflächenbehandlung von Kupferoxydul ist an sich bekannt. Man hat z. B. die aus Kupfer ,und Kupferoxydul bestehenden Gleichrichterlamellen vor dem Aufbringen der Gegenelektrode zum Entfernen einer dünnen Kupferoxydschicht mit mechanischen Mitteln behandelt oder mit chemischen Mitteln geätzt. Die derart behandelten Flächen dienten jedoch zum Aufbringen von Elektroden, die keine Sperrwirkung gegenüber dem Kupferoxydul besitzen sollen. Auch hat man zur Bestimmung der Leitfähigkeitsänderung von Kupferoxydul bei Belichtung auf Kupferoxydulplättchen Elektroden angebracht und das auf dem Kupferoxydul haftende Oxyd zuvor durch mechanische oder chemische Mittel entfernt. Auch in solchen Fällen, in denen man in einem Verstärker rohr eine lichtempfindliche Steuerelektrode aus Kupferoxydul angebracht hat, hat man die Oxyduloberfläche zuvor einem Ätzverfahren unterworfen. Ebenso hat man auch das für Becquerel-Zellen als Elektrodenmaterial zu verwendende Kupferoxydul mit Salmiak oder Zinkchlorid längere Zeit behandelt. Im Gegensatz zu den letztgenannten Zellen wird jedoch bei den Zellen, auf die sich die Erfindung bezieht, der ganze Stromweg durch feste Körper gebildet. The surface treatment of copper oxide is known per se. One has z. B. the made of copper, and copper oxide existing rectifier lamellas before the application of the Counter electrode for removing a thin copper oxide layer by mechanical means treated or etched with chemical agents. However, the areas treated in this way served for applying electrodes that do not have a barrier effect against the copper oxide should own. One also has to determine the change in conductivity of copper oxide on exposure to copper oxide platelets Electrodes attached and the oxide adhering to the copper oxide beforehand by mechanical or chemical means removed. Even in those cases in which one is light-sensitive in an amplifier tube Has attached a control electrode made of copper oxide, the oxide surface has previously been subjected to an etching process. One also has that to be used as electrode material for Becquerel cells Copper oxide treated with ammonia or zinc chloride for a long time. In contrast to the The latter cells, however, are used in the cells to which the invention relates the whole path of the current is formed by solid bodies.

Schließlich hat man auch die Oberfläche von Kristallen geätzt, bevor man eine Spitze aus leitendem Material aufgesetzt hat, um das Ganze als Detektor benutzen zu können.Finally, one has to etch the surface of crystals before making a point made of conductive material in order to be able to use the whole thing as a detector.

Gemäß der Erfindung werden Vorderwand-Sperrschichtzellen, bestehend aus einem Kupferoxydulkörper, mit einer lichtdurchlässigen-Flächenelektrode auf der zu bestrahlenden Vorderfläche und einer zweiten unbestrahlten Elektrode in der Weise hergestellt, daß die Vorderfläche des Kupferoxyduls vor dem Aufbringen der lichtdurchlässigen Vorderelektrode einer Ätzung unterworfen wird. Das Kupferoxydul kann beispielsweise in der Art gewonnen sein, daßAccording to the invention, front wall barrier cells consisting of a Copper oxide body, with a translucent surface electrode on the to be irradiated Front surface and a second non-irradiated electrode manufactured in such a way that the front surface of the copper oxide before the application of the translucent Front electrode is subjected to etching. The copper oxide can for example be won in the way that

*) Von dem Patentsucher sind als die Erfinder angegeben worden:*) The patent seeker indicated the following as the inventors:

Walter Schottky in Berlin-Charlottenburg und Dr. Emil Duhme in Berlin-Siemensstadt.Walter Schottky in Berlin-Charlottenburg and Dr. Emil Duhme in Berlin-Siemensstadt.

man ein Kupferblech bis zum vollständigen Verschwinden des Kupfers erhitzt hat. Zum Ätzen eignet sich insbesondere 25°/0ige heiße Schwefelsäure. Aber auch zahlreiche andere Mittel sind mit Vorteil für die Ätzung verwendbar. Nach dem Ätzen wird das Kupferoxydul sorgfältig gespült und getrocknet und dann die lichtdurchlässige Elektrode auf die vorbehandelte Fläche, vorzugsweise in atomarer Form, z.B. durch Kathodenzerstäubung, aufgebracht. Als Material für die Elektrode sind insbesondere Kupfer, Silber und Gold gut geeignet. Die außerdem vorhandene zweite Elektrode berührt das Kupferoxydul an einer ungeätzten Fläche.a sheet of copper has been heated until the copper has completely disappeared. For etching, in particular 25 ° / 0 owned hot sulfuric acid is suitable. However, numerous other agents can also be used with advantage for the etching. After the etching, the copper oxide is carefully rinsed and dried and then the transparent electrode is applied to the pretreated surface, preferably in atomic form, for example by cathode sputtering. Copper, silver and gold are particularly well suited as material for the electrode. The second electrode, which is also present, touches the copper oxide on an unetched surface.

Claims (2)

Patentansprüche:Patent claims: i. Verfahren zur Herstellung von Vorderwand-Sperrschichtphotozellen, bestehend aus einem Kupferoxydulkörper mit einer lichtdurchlässigen Flächenelektrode auf der zu bestrahlenden Vorderfläche und einer zweiten unbestrahlten Elektrode, dadurch gekennzeichnet, daß die Vorderfjäche des Kupferoxyduls vor dem Aufbringen der lichtdurchlässigen Vorderelektrode einer Ätzung unterworfen wird. i. Process for making front wall barrier photocells, consisting of a copper oxide module with a transparent surface electrode on the front surface to be irradiated and a second non-irradiated electrode, thereby characterized in that the front surface of the copper oxide module prior to application the transparent front electrode is subjected to etching. 2. Verfahren nach Ansprueh 1, dadurch gekennzeichnet, daß zum Ätzen heiße Schwefelsäure von ungefähr 25 °/0 dient.2. The method according to claim 1, characterized in that hot sulfuric acid of approximately 25 ° / 0 is used for etching.
DE1930584009D 1930-08-07 1930-08-07 Process for making front wall barrier photocells Expired DE584009C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE584009T 1930-08-07

Publications (1)

Publication Number Publication Date
DE584009C true DE584009C (en) 1933-09-13

Family

ID=7468937

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1930584009D Expired DE584009C (en) 1930-08-07 1930-08-07 Process for making front wall barrier photocells

Country Status (1)

Country Link
DE (1) DE584009C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE748111C (en) * 1936-09-18 1944-10-26 Process for the production of leakage contacts on semiconductors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE748111C (en) * 1936-09-18 1944-10-26 Process for the production of leakage contacts on semiconductors

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