DE58336T1 - ZNO VARISTOR WITH REDUCED EDGE LEAKAGE. - Google Patents

ZNO VARISTOR WITH REDUCED EDGE LEAKAGE.

Info

Publication number
DE58336T1
DE58336T1 DE1982100710 DE82100710T DE58336T1 DE 58336 T1 DE58336 T1 DE 58336T1 DE 1982100710 DE1982100710 DE 1982100710 DE 82100710 T DE82100710 T DE 82100710T DE 58336 T1 DE58336 T1 DE 58336T1
Authority
DE
Germany
Prior art keywords
disc
varistor
circumference
zinc oxide
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1982100710
Other languages
German (de)
Inventor
Herbert Reynold Scotia New York 12302 Philipp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE58336T1 publication Critical patent/DE58336T1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers

Claims (11)

PatentansprücheClaims 1. Zinkoxid-Varistor mit einem verminderten, von den Elektrodenkanten ausgehenden Randstrom mit1. Zinc oxide varistor with a diminished one from the electrode edges outgoing marginal current with einer gesinterten Scheibe aus Zinkoxid-Material,a sintered disc made of zinc oxide material, einem Paar von Elektroden, von denen je eine auf jeder der Hauptoberflächen dieser Scheibe angeordnet ist, um eine elektrische Verbindung mit der Scheibe zu schaffen,a pair of electrodes, one on each the major surfaces of this disc is arranged to provide an electrical connection with the disc, dadurch gekennzeichnet, daßcharacterized in that die Scheibe zwischen den Elektroden einen reduzierten Durchmesser aufweist, um die Menge an Zinkoxid-Material zwischen den Kanten der Elektroden und dem Umfang der Scheibe zu vermindern.the disc between the electrodes has a reduced diameter to reduce the amount of zinc oxide material between the edges of the electrodes and the periphery of the disc. 2. Varistor nach Anspruch 1 , dadurch gekennzeichnet , daß der Scheibenumfang eine konkave Konfiguration aufweist.2. Varistor according to claim 1, characterized in that the disc circumference is concave Has configuration. 3. Varistor nach Anspruch 1, dadurch gekennzeichnet , daß der Bereich reduzierten Durchmessers durch mindestens eine Rille gebildet wird, die sich um den Scheibenumfang herum erstreckt.3. Varistor according to claim 1, characterized that the area of reduced diameter is formed by at least one groove which extends around the circumference of the disc. 4. Varistor nach Anspruch 2, dadurch gekennzeichnet , daß der Bereich reduzierten Durchmessers durch ein Paar von Rillen gebildet wird, von denen je eine nahe jeder der Elektroden angeordnet ist.4. Varistor according to claim 2, characterized in that the area of reduced diameter is formed by a pair of grooves, one near each of the electrodes. 5. Varistor nach Anspruch 1, weiter gekennzeichnet durch einen Kragen aus Glas oder Keramik auf dem Scheibenumfang, um die Fähigkeit des Varistors, Spannung auszuhalten, zu verbessern.5. varistor according to claim 1, further characterized by a collar made of glass or ceramic the circumference of the disk to improve the varistor's ability to withstand voltage. 6. Verfahren zum Herstellen eines Zinkoxid-Varistors mit einem verminderten Randstrom,6. A method for producing a zinc oxide varistor with a reduced edge current, gekennzeichnet durch die folgenden Stufen:characterized by the following levels: Herstellen einer gesinterten Scheibe aus Zinkoxid-Material mit einem reduzierten Durchmesser zwischen den gegenüberliegenden Flächen der Scheibe undManufacture a sintered disk from zinc oxide material with a reduced diameter between the opposing ones Surfaces of the disc and Anordnen je einer Elektrode auf jeder der Scheibenflachen.Arrange one electrode on each of the disk surfaces. 7. Verfahren nach Anspruch 6, weiter gekennzeichnet durch das Anbringen einer Schicht aus Glasoder Keramikmaterial auf dem Umfang der Scheibe, um die Fähigkeit des Varistors, Spannung zu widerstehen, zu erhöhen.7. The method according to claim 6, further characterized by the application of a layer of glass or Ceramic material on the periphery of the disc to increase the varistor's ability to withstand voltage raise. 8. Verfahren nach Anspruch 7, dadurch gekennzeichnet, daß man dem Umfangsbereich der Scheibe eine konkave Konfiguration gibt.8. The method according to claim 7, characterized in that the peripheral region of the disc there is a concave configuration. 9. Verfahren nach Anspruch 6, dadurch gekennzeichnet , daß man mindestens eine sich um den
Umfang der Scheibe erstreckende Rille herstellt.9. The method according to claim 6, characterized in that there is at least one around the
Produces circumference of the disc extending groove. 10. Verfahren nach Anspruch 9, dadurch gekennzeichnet , daß man mehrere sich um den Umfang der Scheibe erstreckende Rillen herstellt, um die Fähigkeit der Scheibe, Spannung zu widerstehen, zu verbessern.10. The method according to claim 9, characterized that one makes a plurality of grooves extending around the circumference of the disc to the ability of Disc to withstand tension, improve. 11. Verfahren nach Anspruch 10, dadurch gekennzeichnet , daß man auf den Scheibenumfang einen
Überzug aus Glas oder Keramik aufbringt, um die Fähigkeit
der Scheibe, Spannung zu widerstehen, zu verbessern.11. The method according to claim 10, characterized in that one on the disk circumference
Plating of glass or ceramic applies to the ability
the disc to withstand tension, improve.
DE1982100710 1981-02-13 1982-02-02 ZNO VARISTOR WITH REDUCED EDGE LEAKAGE. Pending DE58336T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23436981A 1981-02-13 1981-02-13

Publications (1)

Publication Number Publication Date
DE58336T1 true DE58336T1 (en) 1983-01-05

Family

ID=22881087

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8282100710T Expired DE3277042D1 (en) 1981-02-13 1982-02-02 Zinc oxide varistor with reduced fringe current effects
DE1982100710 Pending DE58336T1 (en) 1981-02-13 1982-02-02 ZNO VARISTOR WITH REDUCED EDGE LEAKAGE.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE8282100710T Expired DE3277042D1 (en) 1981-02-13 1982-02-02 Zinc oxide varistor with reduced fringe current effects

Country Status (4)

Country Link
EP (1) EP0058336B1 (en)
JP (1) JPS57152106A (en)
DE (2) DE3277042D1 (en)
MX (1) MX157914A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451815A (en) * 1982-09-27 1984-05-29 General Electric Company Zinc oxide varistor having reduced edge current density
DE3405834A1 (en) * 1984-02-17 1985-08-22 Siemens AG, 1000 Berlin und 8000 München Varistor consisting of a wafer of zinc-oxide material, which is semiconductive as a result of doping, and a method for producing this varistor
DE3562835D1 (en) * 1984-07-31 1988-06-23 Siemens Ag Chip varistor for use in printed circits, and method of producing it
GB2321135B (en) * 1997-01-11 2001-06-27 Furse W J & Co Ltd Improvements in or relating to thermal trip arrangements

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH257857A (en) * 1946-06-20 1948-10-31 Sprecher & Schuh Ag Voltage dependent resistance.
DE1414326A1 (en) * 1955-08-25 1968-12-12 Siemens Ag Semiconductor arrangement for rectification and / or amplification
US3336486A (en) * 1966-09-06 1967-08-15 Energy Conversion Devices Inc Control system having multiple electrode current controlling device
DE2738367A1 (en) * 1977-08-25 1979-03-01 Siemens Ag Varistor using zinc oxide moulding with specific shape - provides overload protection for high frequency transmission cables

Also Published As

Publication number Publication date
DE3277042D1 (en) 1987-09-24
EP0058336A3 (en) 1983-05-11
EP0058336B1 (en) 1987-08-19
JPS57152106A (en) 1982-09-20
EP0058336A2 (en) 1982-08-25
MX157914A (en) 1988-12-20

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