DE511039C - Dry, solid rectifier made up of several layers of different substances - Google Patents
Dry, solid rectifier made up of several layers of different substancesInfo
- Publication number
- DE511039C DE511039C DEP56166D DEP0056166D DE511039C DE 511039 C DE511039 C DE 511039C DE P56166 D DEP56166 D DE P56166D DE P0056166 D DEP0056166 D DE P0056166D DE 511039 C DE511039 C DE 511039C
- Authority
- DE
- Germany
- Prior art keywords
- layer
- lead
- dry
- several layers
- different substances
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title claims description 3
- 239000000126 substance Substances 0.000 title claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- CZZBXGOYISFHRY-UHFFFAOYSA-N copper;hydroiodide Chemical compound [Cu].I CZZBXGOYISFHRY-UHFFFAOYSA-N 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- KEQXNNJHMWSZHK-UHFFFAOYSA-L 1,3,2,4$l^{2}-dioxathiaplumbetane 2,2-dioxide Chemical compound [Pb+2].[O-]S([O-])(=O)=O KEQXNNJHMWSZHK-UHFFFAOYSA-L 0.000 description 2
- JKFYKCYQEWQPTM-UHFFFAOYSA-N 2-azaniumyl-2-(4-fluorophenyl)acetate Chemical compound OC(=O)C(N)C1=CC=C(F)C=C1 JKFYKCYQEWQPTM-UHFFFAOYSA-N 0.000 description 2
- 229910021612 Silver iodide Inorganic materials 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 229940045105 silver iodide Drugs 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000006252 electrolytic conductor Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
Description
DEUTSCHES REICHGERMAN EMPIRE
AUSGEGEBEN AM 25. OKTOBER 1930ISSUED ON OCTOBER 25, 1930
REICHSPATENTAMTREICH PATENT OFFICE
PATENTSCHRIFTPATENT LETTERING
KLASSE 21g GRUPPE u/o* CLASS 21g GROUP u / o *
Patentiert im Deutschen Reiche vom 1. Oktober 1927 ab Patented in the German Empire on October 1, 1927
Im Patent 497 136 ist ein aus mehreren Schichten verschiedener Stoffe bestehender trockener, fester Gleichrichter beschrieben, bei dem zwischen einer beliebigen zur Stromzuführung benutzten Metallschicht einerseits und einer Schicht aus einer beliebigen metallisch leitenden chemischen Verbindung anderseits eine sehr dünne Zwischenschicht aus einem ausschließlich elektrolytisch leitenden,In the 497,136 patent, there is one made up of several layers of different fabrics dry, solid rectifier described in which between any for power supply used metal layer on the one hand and a layer of any metallic conductive chemical compound, on the other hand, a very thin intermediate layer an exclusively electrolytically conductive,
d. h. keine Elektronenleitfähigkeit aufweisenden Halogenid, wie Silberjodid, angeordnet ist. Diese die Gleichrichtung vornehmlich übernehmende Zwischenschicht entsteht unter Umständen, nämlich bei geeigneter Wahl der beiden anderen Schichten ohne weiteres von selbst durch gegenseitige chemische Einwirkung dieser beiden Schichten, an der Berührungsfläche. So bildet sich beispielsweise bei Anlagerung einer Silberschicht oder Bleischicht an eine Schicht aus einer ungesättigten Halogenverbindung des Kupfers, insbesondere Kupfer jodürschicht, von selbst eine Zwischenschicht aus Silberjodid oder Bleijodid, und zwar sogar schon bei gewöhnlicher Temperatur.d. H. no electron conductivity exhibiting halide such as silver iodide arranged is. This intermediate layer, which primarily takes over the rectification, is created underneath Circumstances, namely with a suitable choice of the other two layers without further ado even through the mutual chemical action of these two layers on the contact surface. For example, when a layer of silver or lead is deposited, it forms to a layer of an unsaturated halogen compound of copper, in particular Copper iodine layer, by itself an intermediate layer of silver iodide or lead iodide, even at normal temperature.
Erfindungsgemäß wurde nun festgestellt, daß die Wirkung derartiger trockener, fester Gleichrichter bei leichter Herstellungsmöglichkeit wesentlich erhöht wird, wenn die Zwischenschicht des elektrolytiscban Leiters aus Bleisulfat besteht. Eine besonders gute Lebensdauer des Gleichrichters ergibt sich hierbei durch Einlagerung einer Bleisulfatschicht zwischen einer Bleischicht einerseits und einer Kupfer j odürschicht anderseits. Es entsteht dann nämlich von selbst neben dem anfänglich schon vorhandenen Bleisulfat auch noch Blei jodid.According to the invention it has now been found that the effect of such drier, firmer Rectifier is significantly increased with ease of manufacture if the The intermediate layer of the electrolytic conductor consists of lead sulfate. A particularly good one The service life of the rectifier results from the inclusion of a lead sulphate layer between a lead layer on the one hand and a copper yodur layer on the other. It This is because it then arises by itself in addition to the lead sulphate that is already present at the beginning still lead iodide.
Die neue Zwischenschicht aus Bleisulfat kann einfach durch Behandeln von Bleiblech mit Schwefelsäure oder Sulfaten erhalten werden. Zweckmäßig verfährt man jedoch in der Weise, daß man das Bleiblech vor der Verarbeitung zu Gleichrichterplatten in Schwefelsäure längere Zeit verweilen läßt. Durch hohen Druck wird das so mit Bleisulfat überzogene Bleiblech mit einer Kupferjodürschicht, die zweckmäßig auf einer zur Stromzuführung dienenden Unterlage aufgebracht ist, zu einem einzigen Körper vereinigt. The new intermediate layer of lead sulfate can be created simply by treating lead sheet with sulfuric acid or sulfates. Appropriately, however, one proceeds in the way that the lead sheet can be turned into rectifier plates in Let sulfuric acid linger for a long time. This is what happens with lead sulfate through high pressure coated lead sheet with a copper iodine layer, which is expediently on a for Power supply serving pad is applied, combined into a single body.
Auf diese Weise hergestellte Gleichrichterplatten haben nicht nur bei verhältnismäßig großer Stromdichte, etwa 0,2 Ampere fürRectifier plates produced in this way have not only relatively large current density, about 0.2 amps for
*J Von dem Patentsucher sind als die Erfinder angegeben worden .· * J Have been named as the inventors by the patent seeker .
Dr. Ernst Friederich in Berlin-Charlottenbiirg und Dr. Wilfried Meyer in Berlin-Steglit^.Dr. Ernst Friederich in Berlin-Charlottenbiirg and Dr. Wilfried Meyer in Berlin-Steglit ^.
ι qcm, eine außerordentlich hohe Lebensdauer, sondern bedürfen auch beiner Hilfsmittel zur Kühlung.ι qcm, an extremely long service life, but also need aids for cooling.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP56166D DE511039C (en) | 1927-09-30 | 1927-10-01 | Dry, solid rectifier made up of several layers of different substances |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP0056166 | 1927-09-30 | ||
| DEP56166D DE511039C (en) | 1927-09-30 | 1927-10-01 | Dry, solid rectifier made up of several layers of different substances |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE511039C true DE511039C (en) | 1930-10-25 |
Family
ID=25990844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEP56166D Expired DE511039C (en) | 1927-09-30 | 1927-10-01 | Dry, solid rectifier made up of several layers of different substances |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE511039C (en) |
-
1927
- 1927-10-01 DE DEP56166D patent/DE511039C/en not_active Expired
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