DE502006009171D1 - Kollektor für beleuchtungssysteme mit einer wellenlänge </= 193 nm - Google Patents

Kollektor für beleuchtungssysteme mit einer wellenlänge </= 193 nm

Info

Publication number
DE502006009171D1
DE502006009171D1 DE502006009171T DE502006009171T DE502006009171D1 DE 502006009171 D1 DE502006009171 D1 DE 502006009171D1 DE 502006009171 T DE502006009171 T DE 502006009171T DE 502006009171 T DE502006009171 T DE 502006009171T DE 502006009171 D1 DE502006009171 D1 DE 502006009171D1
Authority
DE
Germany
Prior art keywords
collector
wavelength
lighting systems
lighting
systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE502006009171T
Other languages
German (de)
English (en)
Inventor
Joachim Hainz
Martin Endres
Wolfgang Singer
Bernd Kleemann
Dieter Bader
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of DE502006009171D1 publication Critical patent/DE502006009171D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE502006009171T 2005-10-18 2006-10-17 Kollektor für beleuchtungssysteme mit einer wellenlänge </= 193 nm Active DE502006009171D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US72789205P 2005-10-18 2005-10-18
PCT/EP2006/010004 WO2007045434A2 (de) 2005-10-18 2006-10-17 Kollektor für beleuchtungssysteme mit einer wellenlänge ≤ 193 nm

Publications (1)

Publication Number Publication Date
DE502006009171D1 true DE502006009171D1 (de) 2011-05-05

Family

ID=37698183

Family Applications (1)

Application Number Title Priority Date Filing Date
DE502006009171T Active DE502006009171D1 (de) 2005-10-18 2006-10-17 Kollektor für beleuchtungssysteme mit einer wellenlänge </= 193 nm

Country Status (5)

Country Link
US (1) US20080225387A1 (https=)
EP (1) EP1938150B1 (https=)
JP (1) JP4990287B2 (https=)
DE (1) DE502006009171D1 (https=)
WO (1) WO2007045434A2 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007045396A1 (de) 2007-09-21 2009-04-23 Carl Zeiss Smt Ag Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle
EP2083327B1 (en) * 2008-01-28 2017-11-29 Media Lario s.r.l. Improved grazing incidence collector optical systems for EUV and X-ray applications
DE102008000967B4 (de) * 2008-04-03 2015-04-09 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die EUV-Mikrolithographie
DE102009030501A1 (de) * 2009-06-24 2011-01-05 Carl Zeiss Smt Ag Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Beleuchtungsoptik zur Ausleuchtung eines Objektfeldes
DE102009054540B4 (de) * 2009-12-11 2011-11-10 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Mikrolithographie
CN102687062B (zh) * 2009-12-21 2016-08-03 马丁专业公司 具有多个光源的投影照明装置
KR102051267B1 (ko) 2010-04-02 2019-12-02 가부시키가이샤 니콘 조명 광학계, 노광 방법 및 디바이스 제조 방법
DE102010029049B4 (de) * 2010-05-18 2014-03-13 Carl Zeiss Smt Gmbh Beleuchtungsoptik für ein Metrologiesystem für die Untersuchung eines Objekts mit EUV-Beleuchtungslicht sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik
DE102011016058B4 (de) * 2011-04-01 2012-11-29 Xtreme Technologies Gmbh Verfahren und Vorrichtung zur Einstellung von Eigenschaften eines Strahlenbündels aus einem Plasma emittierter hochenergetischer Strahlung
DE102011076297A1 (de) 2011-05-23 2012-11-29 Carl Zeiss Smt Gmbh Blende
DE102011076460A1 (de) * 2011-05-25 2012-11-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik
DE102013204441A1 (de) 2013-03-14 2014-04-03 Carl Zeiss Smt Gmbh Kollektor
DE102013218132A1 (de) 2013-09-11 2015-03-12 Carl Zeiss Smt Gmbh Kollektor
DE102013218128A1 (de) 2013-09-11 2015-03-12 Carl Zeiss Smt Gmbh Beleuchtungssystem
DE102015201138A1 (de) * 2015-01-23 2016-01-28 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
DE102018207103A1 (de) 2018-05-08 2019-03-21 Carl Zeiss Smt Gmbh Feldfacettenspiegel
DE102018214559A1 (de) 2018-08-28 2019-09-12 Carl Zeiss Smt Gmbh Optische Anordnung und EUV-Lithographievorrichtung damit
US11543753B2 (en) 2019-10-30 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Tunable illuminator for lithography systems

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2077740A (en) * 1934-03-30 1937-04-20 Martha W Caughlan Reflecting surface
DE3340462C1 (de) * 1983-11-09 1985-04-18 Westfälische Metall Industrie KG Hueck & Co, 4780 Lippstadt Abgeblendeter Fahrzeugscheinwerfer
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
EP0955641B1 (de) * 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
DE10053587A1 (de) * 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
US6195201B1 (en) * 1999-01-27 2001-02-27 Svg Lithography Systems, Inc. Reflective fly's eye condenser for EUV lithography
US6600552B2 (en) * 1999-02-15 2003-07-29 Carl-Zeiss Smt Ag Microlithography reduction objective and projection exposure apparatus
US7248667B2 (en) * 1999-05-04 2007-07-24 Carl Zeiss Smt Ag Illumination system with a grating element
DE19935568A1 (de) * 1999-07-30 2001-02-15 Zeiss Carl Fa Steuerung der Beleuchtungsverteilung in der Austrittspupille eines EUV-Beleuchtungssystems
AU2002325359A1 (en) * 2001-08-10 2003-02-24 Carl Zeiss Smt Ag Collector with fastening devices for fastening mirror shells
DE10138284A1 (de) * 2001-08-10 2003-02-27 Zeiss Carl Beleuchtungssystem mit genesteten Kollektoren
DE10208854A1 (de) * 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Beleuchtungssystem mit genestetem Kollektor zur annularen Ausleuchtung einer Austrittspupille
DE10214259A1 (de) * 2002-03-28 2003-10-23 Zeiss Carl Semiconductor Mfg Kollektoreinheit für Beleuchtungssysteme mit einer Wellenlänge <193 nm
US7084412B2 (en) * 2002-03-28 2006-08-01 Carl Zeiss Smt Ag Collector unit with a reflective element for illumination systems with a wavelength of smaller than 193 nm
DE10219514A1 (de) * 2002-04-30 2003-11-13 Zeiss Carl Smt Ag Beleuchtungssystem, insbesondere für die EUV-Lithographie
JP2006511070A (ja) * 2002-12-19 2006-03-30 カール・ツァイス・エスエムティー・アーゲー 効率的な集光器光学系を有する照明システム
US7481544B2 (en) * 2004-03-05 2009-01-27 Optical Research Associates Grazing incidence relays
JP2006245147A (ja) * 2005-03-01 2006-09-14 Canon Inc 投影光学系、露光装置及びデバイスの製造方法

Also Published As

Publication number Publication date
US20080225387A1 (en) 2008-09-18
EP1938150B1 (de) 2011-03-23
WO2007045434A2 (de) 2007-04-26
JP4990287B2 (ja) 2012-08-01
EP1938150A2 (de) 2008-07-02
WO2007045434A3 (de) 2007-07-19
JP2009512223A (ja) 2009-03-19

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