DE488041C - Ring-shaped electrode for metal oxide rectifiers - Google Patents

Ring-shaped electrode for metal oxide rectifiers

Info

Publication number
DE488041C
DE488041C DES83539D DES0083539D DE488041C DE 488041 C DE488041 C DE 488041C DE S83539 D DES83539 D DE S83539D DE S0083539 D DES0083539 D DE S0083539D DE 488041 C DE488041 C DE 488041C
Authority
DE
Germany
Prior art keywords
electrode
ring
metal oxide
shaped electrode
oxide rectifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES83539D
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Publication date
Priority to DES83539D priority Critical patent/DE488041C/en
Application granted granted Critical
Publication of DE488041C publication Critical patent/DE488041C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Die Bonding (AREA)

Description

Ringförmige Elektrode für Wetalloxydgleichrichter Bei ringförmigen Elektroden für Metalloxydgleichrichter, die auf einem Bolzen aufgereiht und durch Schraubendruck zusammengepreßt werden, hat es sich gezeigt, daß die -aus Metalloxyd bestehende wirksame Schicht, mit der die eine Elektrodenoberfläche bedeckt ist, an den Rändern der Elektrode der Gefahr des Absprigens ausgesetzt ist. Macht man, wie es des bequemeren Zusamnienbaus wegen üblich ist, den Innen- und Außendurchmesser der Gegenelektrode (bzw. eineT aus duktilem Metall bestehenden Zwischenlage) gleich dem Innen- bzw. Außendurchmesser der mit der wirksamen Schicht versehenen Elektrode, so kann da, wo die wirksame Schicht abgesprungen ist, leicht ein Kurzschluß zwischen den beiden unter Druck einander berührenden Elektroden eintreten. Man könnte sich dadurch zu helfen suchen, daß man bei der Gegenelektrode den Außendurchmesser etwas kleiner und den Innendurchmesser etwas größer macht als bei deer anderen Elektrode. Aber abgesehen davon, daß sich dadurch eine volle Sicherheit gegen. das Auftreten von Kutzschlüssen doch nicht erreichen läßt, kommt dann der weitere Nachteil hinzu, daß die Montage der Gegenelektrode sehr viel mehr Zeit und Sore.alt erfordert als diejenige der mit einer Bohrung den Schraubenbolzen dicht umschließenden anderen Elektrode.Ring-shaped electrode for wetal oxide rectifiers For ring-shaped Electrodes for metal oxide rectifiers, which are strung on a bolt and through Screw pressure are pressed together, it has been shown that the metal oxide existing effective layer with which one electrode surface is covered, at the edges of the electrode is exposed to the risk of spalling. Do you as is customary for more convenient assembly, the inside and outside diameter the counter electrode (or an intermediate layer made of ductile metal) the inside or outside diameter of the electrode provided with the effective layer, so there can easily be a short circuit between the two electrodes touching each other under pressure. You could Try to help by slightly increasing the outside diameter of the counter electrode smaller and the inner diameter a little larger than the other electrode. But apart from the fact that thereby a full security against. the appearance can not be achieved by Kutzschlüssen, then there is the further disadvantage, that the assembly of the counter electrode requires a lot more time and Sore.alt than that of the other tightly enclosing the screw bolt with a hole Electrode.

Gemäß der Erfindung werden diese Nach-t> teile dadurch vermieden, daß die mit der wirksamen Oxydschicht bedeckte Elektrodenoberfläche an ihrem inneren -- und gegebenenfalls auch an ihrem äußeren - Rande abgeschrägt oder abgerundet ist.According to the invention these drawbacks are t> parts avoided that the oxide layer covered with the active electrode surface on its inner - beveled edge or rounded - and possibly also at its outer.

Ein Ausführungsbeispiel der Erfindung ist in der Zeiclinung abgebildet.An embodiment of the invention is shown in the drawing.

i ist die an ihrer Oberfläche mit der wirksamen Oxydschicht 2 bedeckte Elektrode, deren Kanten3 und 4 unter einem Winkel von 45' abgeschrägt sind. Die Abbildung läßt erkennen, daß die mit gleichem Außen-und Innendurchmesser wie die Elektrode i ausgeführte Gegenelektrode 5 sich ebenso leicht auf den Bolzen6 aufbringen läßt wie die Elektrode i. Durch die Abschrägungen 3 und 4 wird eine große Sicherheit gegen das Abspringen von Teilen der wirksamen Schicht erreicht und, falls an den abgeschrägten Kanten doch noch Teilchen der wirksamen Schicht abspringen sollten. der Gefahr eines Kurzschlusses zwischen Elektrode und Gegenelektrode wirksam vorgebeugt.i is the electrode covered on its surface with the active oxide layer 2, the edges 3 and 4 of which are bevelled at an angle of 45 '. The figure shows that the counter-electrode 5 , which has the same outer and inner diameter as the electrode i, can be applied to the bolt 6 just as easily as the electrode i. The bevels 3 and 4 provide a high level of security against parts of the effective layer from jumping off and, if particles of the effective layer should still jump off the beveled edges. the risk of a short circuit between the electrode and the counter electrode is effectively prevented.

Claims (1)

PATENTANSPRUCH-. Ringförr.nige Elektrode für Metalloxydgleichrichter, dadurch gekennzeichnet, daß die mit der wirksamen Oxydschicht be-#deckte Elektrodenoberfläche an ihrem irmeren - und gegebenenfalls auch an ihrem äußeren - Rande abgeschrägt oder abgeiundet ist. PATENT CLAIM-. Ring-shaped electrode for metal oxide rectifiers, characterized in that the electrode surface covered with the active oxide layer is beveled or rounded at its inner - and possibly also at its outer - edge.
DES83539D Ring-shaped electrode for metal oxide rectifiers Expired DE488041C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES83539D DE488041C (en) Ring-shaped electrode for metal oxide rectifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES83539D DE488041C (en) Ring-shaped electrode for metal oxide rectifiers

Publications (1)

Publication Number Publication Date
DE488041C true DE488041C (en) 1929-12-20

Family

ID=7511114

Family Applications (1)

Application Number Title Priority Date Filing Date
DES83539D Expired DE488041C (en) Ring-shaped electrode for metal oxide rectifiers

Country Status (1)

Country Link
DE (1) DE488041C (en)

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