DE4422996A1 - Plasma etching of plastic, esp. high temp. plastics - Google Patents

Plasma etching of plastic, esp. high temp. plastics

Info

Publication number
DE4422996A1
DE4422996A1 DE19944422996 DE4422996A DE4422996A1 DE 4422996 A1 DE4422996 A1 DE 4422996A1 DE 19944422996 DE19944422996 DE 19944422996 DE 4422996 A DE4422996 A DE 4422996A DE 4422996 A1 DE4422996 A1 DE 4422996A1
Authority
DE
Germany
Prior art keywords
plasma etching
plastic material
plastic
esp
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19944422996
Other languages
German (de)
Other versions
DE4422996C2 (en
Inventor
Juergen Dr Ing Weichart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Buck Chemisch Technische Werke GmbH and Co
Buck Werke GmbH and Co
Original Assignee
Buck Chemisch Technische Werke GmbH and Co
Buck Werke GmbH and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Buck Chemisch Technische Werke GmbH and Co, Buck Werke GmbH and Co filed Critical Buck Chemisch Technische Werke GmbH and Co
Priority to DE19944422996 priority Critical patent/DE4422996C2/en
Publication of DE4422996A1 publication Critical patent/DE4422996A1/en
Application granted granted Critical
Publication of DE4422996C2 publication Critical patent/DE4422996C2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0041—Etching of the substrate by chemical or physical means by plasma etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2079/00—Use of polymers having nitrogen, with or without oxygen or carbon only, in the main chain, not provided for in groups B29K2061/00 - B29K2077/00, as moulding material
    • B29K2079/08—PI, i.e. polyimides or derivatives thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0548—Masks
    • H05K2203/0554—Metal used as mask for etching vias, e.g. by laser ablation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
    • H05K3/427—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in metal-clad substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

In a process for plasma etching of plastic material (10), esp. high temp. resistant plastics (esp. polyimide), the plastic material is uniformly heated before and/or during the etching stage. Plastic is pref. preheated at a preheating station (20) in front of the plasma etching station (18). Vacuum is applied during heating which is by radiation or infra-red.

Description

Die Erfindung betrifft ein Verfahren zum Plasmaätzen von Kunststoffmaterial insbesondere von hochtemperaturfestem Kunststoff, wie Polyimid.The invention relates to a method for plasma etching Plastic material especially of high temperature resistant Plastic, such as polyimide.

Die fortschreitende Miniaturisierung der Mikroelektronik macht dünne, leichte und teilweise auch flexible Leiter­ platten mit hoher Temperaturbelastbarkeit erforderlich, mit denen sich möglichst geringe Leiterbahnbreiten, Mehr­ lagenschaltungen, feine Bohrungen sowie Anschluß-Pads rea­ lisieren lassen. Beim hierzu verwendeten sogenannten Dyco­ strate-Verfahren werden durch Niederdruck-Plasmaätzen Lö­ cher in flexiblen Leiterplatten oder Mehrlagenschaltungen ausgebildet. Als Leiterplattenmaterial dient dabei z. B. Polyimid in Form von 50 µm dicken Folien, die beidseitig mit Kupfer kaschiert sind. In die Kupfer-Kaschierungen werden beidseitig photolitographisch Löcher geätzt, die als Ätzmaske beim Durchätzen des Polyimid-Leiterplattenma­ terials dienen. Im Gegensatz zum Bohren lassen sich mit­ tels des Plasmaätzens nicht nur runde Löcher, sondern be­ liebige Formen, wie z. B. Rechtecke oder Schriftzüge, rea­ lisieren. Darüber hinaus werden beim Plasmaätzen alle Lö­ cher einer Platine simultan bearbeitet, während beim her­ kömmlichen Bohren sequentiell vorgegangen werden muß. Au­ ßerdem fallen beim Plasmaätzen keine Bohrrückstände an, die in einem nachgeschalteten Reinigungsverfahren entfernt werden müssen.The advancing miniaturization of microelectronics makes thin, light and sometimes flexible conductors plates with high temperature resistance required, with which the smallest possible track widths, more layer circuits, fine bores and connection pads rea get lized. In the so-called Dyco used for this strate processes are by low pressure plasma etching Lö cher in flexible printed circuit boards or multilayer circuits educated. Z serves as circuit board material. B. Polyimide in the form of 50 µm thick films on both sides are clad with copper. In the copper cladding  holes are etched on both sides photolithographically as an etching mask when etching through the polyimide circuit board serve terials. In contrast to drilling, can be used plasma etching not only round holes, but be lovely shapes, such as B. rectangles or lettering, rea lize. In addition, all Lö machined a board simultaneously, while in the forth conventional drilling must be carried out sequentially. Au Furthermore, there are no drilling residues during plasma etching, which are removed in a downstream cleaning process Need to become.

Diesen Vorteilen des Plasmaätzverfahrens steht eine nied­ rige Ätzrate gegenüber. Beim Plasmaätzen von Kohlenwasser­ stoffen spielt die Temperatur eine entscheidende Rolle. Versuche mit Polyimid als Leiterplattenmaterial, das beid­ seitig mit Kupfer kaschiert war, zeigten, daß der Ätzvor­ gang erst bei leicht erhöhter Temperatur effektiv läuft. Bei den bisherigen Plasmaanwendungen ergab sich eine Zu­ nahme der Temperatur jedoch meist eher zufällig durch das Erwärmen der Bestandteile der Leiterplatte. Dies bringt zwei entscheidende Nachteile mit sich:These advantages of the plasma etching process stand out compared to the etching rate. When plasma etching hydrocarbon temperature plays a crucial role. Try polyimide as the circuit board material, both was clad with copper on both sides, showed that the etching only runs effectively at a slightly elevated temperature. In previous plasma applications, there was an increase However, the temperature is usually taken by chance by Heating the components of the circuit board. This brings two decisive disadvantages:

  • 1. Bei einer zeitlich nicht gleichmäßigen und maximalen optimierten Temperatur kann die maximal mögliche Ätzrate nicht erreicht werden.1. With a temporally not even and maximum optimized temperature can be the maximum possible etching rate cannot be reached.
  • 2. Die Bestandteile des Laminats der Leiterplatte, hier Polyimid und Kupfer, werden im Plasma nicht gleichmäßig erwärmt. Insbesondere erwärmt sich die Kupfer-Kaschierung schneller, was zu einem Aufwerfen der Kupferschicht und damit zur Vernichtung der Leiterplatte führt. Das an sich temperaturfeste Leiterplattenmaterial Polyimid erlaubt eine erhöhte Bearbeitungstemperatur, die jedoch bei inho­ mogener Erwärmung nicht genutzt werden kann.2. The components of the laminate of the circuit board, here Polyimide and copper do not become uniform in plasma warmed up. In particular, the copper cladding heats up faster, causing the copper layer to rise and thus leads to the destruction of the circuit board. That in itself  Temperature-resistant circuit board material polyimide allowed an increased processing temperature, which, however, at inho mogeneous warming cannot be used.

Der Erfindung liegt daher die Aufgabe zugrunde, das Plas­ maätzverfahren von Kunststoffmaterial dahingehend weiter­ zubilden, daß bei geringem Ausschuß höhere Ätzraten er­ zielt werden.The invention is therefore based on the object, the plas process of etching plastic material further to form that with a small reject higher etching rates aims to be.

Erfindungsgemäß wird diese Aufgabe dadurch gelöst, daß das Kunststoffmaterial vor dem und/oder während des Plasmaät­ zen(s) gleichmäßig erwärmt wird.According to the invention this object is achieved in that the Plastic material before and / or during the plasma zen (s) is heated evenly.

Vorzugsweise wird das Kunststoffmaterial in Vakuum er­ wärmt.Preferably, the plastic material in vacuum warms.

Dabei kann vorgesehen sein, daß das Kunststoffmaterial mittels mindestens einer Strahlungsheizung erwärmt wird.It can be provided that the plastic material is heated by means of at least one radiant heater.

Alternativ dazu kann vorgesehen sein, daß das Kunststoff­ material mittels mindestens einer Infrarotstrahlung er­ wärmt wird.Alternatively, it can be provided that the plastic material using at least one infrared radiation is warmed.

Schließlich wird vorzugsweise das Kunststoffmaterial in einer Vorheizstation vor der Plasmaätzstation im Durchlauf erwärmt.Finally, the plastic material is preferably in a preheating station in front of the plasma etching station warmed up.

Der Erfindung liegt die überraschende Erkenntnis zugrunde, daß durch ein sozusagen "heterogenes", planmäßiges Erwär­ men der Leiterplatte vorzugsweise vor dem Plasmaätzen und in jedem Fall unabhängig von der Plasmaeinwirkung die Tem­ peratur des Plasmas, ohne daß ein Aufwerfen der Kupfer­ schicht eintritt, derart erhöht werden kann, daß die da­ durch erzielbaren Ätzraten die Anwendung des Plasmaätzver­ fahrens wirtschaftlich rentabel machen.The invention is based on the surprising finding that through a so to speak "heterogeneous", scheduled heating men of the circuit board preferably before plasma etching and in any case, regardless of the plasma exposure, the tem temperature of the plasma without having to throw up the copper  layer occurs, can be increased so that there the achievable etching rates allow the use of the plasma etch make driving economically profitable.

Weitere Merkmale und Vorteile der Erfahrung ergeben sich aus der nachstehenden Beschreibung, in der ein Ausfüh­ rungsbeispiel anhand der schematischen Zeichnung im ein­ zelnen erläutert ist. Dabei zeigt:Other characteristics and advantages of the experience arise from the description below, in which an exec Example based on the schematic drawing in a is explained. It shows:

Fig. 1 eine Leiterplatte aus Polyimid mit Kupfer-Ka­ schierungen, und Fig. 1 is a circuit board made of polyimide with copper Ka, and

Fig. 2 eine Vorrichtung zur Durchführung des Verfahrens gemäß der Erfindung. Fig. 2 shows an apparatus for performing the method according to the invention.

Fig. 1 zeigt eine Leiterplatte 10 aus Polyimid, die auf beiden Seiten Kupfer-Kaschierungen 12, 14 aufweist. In die Kupfer-Kaschierungen 12, 14 wurden beidseitig photolito­ graphisch Löcher 16 geätzt, die als Ätzmaske beim Durch­ ätzen der Polyimid-Leiterplatte dienen. Diese Leiterplatte 10 passiert vor einer Plasmaätzstation 18, bei der Löcher in die Leiterplatte 10 geätzt werden, eine Vorheizstation 20 (s. Fig. 2), in der die Leiterplatte 10 homogen erwärmt wird. Für die kontinuierliche und gleichmäßige Bearbeitung der zu ätzenden Leiterplatten 10 werden diese im Durchlauf bearbeitet, wobei die Abstimmung der Durchlaufgeschwindig­ keit, der Länge der Vorheizstrecke und der Länge der Plas­ maätzstrecke eine optimale Ätzrate garantieren. Fig. 1 shows a circuit board 10 made of polyimide, which on both sides of copper laminations 12, 14 has. Holes 16 , which serve as an etching mask when etching through the polyimide circuit board, were etched graphically on both sides in the copper claddings 12 , 14 . This circuit board 10 passes in front of a plasma etching station 18 , in which holes are etched in the circuit board 10 , a preheating station 20 (see FIG. 2), in which the circuit board 10 is heated homogeneously. For the continuous and uniform processing of the printed circuit boards 10 to be etched, these are processed in a continuous process, the coordination of the throughput speed, the length of the preheating section and the length of the plasma etching section guaranteeing an optimal etching rate.

Die in der vorangehenden Beschreibung, in der Zeichnung sowie in den Ansprüchen offenbarten Merkmale der Erfindung können sowohl einzeln als auch in beliebigen Kombinationen für die Verwirklichung der Erfindung in ihren verschiede­ nen Ausführungsformen wesentlich sein.The one in the previous description, in the drawing as well as features of the invention disclosed in the claims can be used individually or in any combination for the realization of the invention in its various  NEN embodiments may be essential.

BezugszeichenlisteReference list

10 Leiterplatte
12, 14 Kaschierung
16 Loch
18 Plasmaätzstation
20 Vorheizstation 10 circuit board
12 , 14 lamination
16 holes
18 plasma etching station
20 preheating station

Claims (5)

1. Verfahren zum Plasmaätzen von Kunststoffmaterial, insbesondere von hochtemperaturfestem Kunststoff, wie Polyimid, dadurch gekennzeichnet, daß das Kunststoff­ material vor dem und/oder während des Plasmaätzen(s) gleichmäßig erwärmt wird.1. A method for plasma etching plastic material, in particular high-temperature-resistant plastic such as polyimide, characterized in that the plastic material is heated uniformly before and / or during the plasma etching (s). 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß das Kunststoffmaterial in Vakuum erwärmt wird.2. The method according to claim 1, characterized in that the plastic material is heated in vacuum. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß das Kunststoffmaterial mittels mindestens einer Strahlungsheizung erwärmt wird. 3. The method according to claim 1 or 2, characterized characterized in that the plastic material by means of at least one radiant heater is heated.   4. Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß das Kunststoffmaterial mittels Infrarotstrahlung erwärmt wird.4. The method according to any one of the preceding claims, characterized in that the plastic material by means of Infrared radiation is heated. 5. Verfahren nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß das Kunststoffmaterial in einer Vorheizstation vor der Plasmaätzstation im Durchlauf erwärmt wird.5. The method according to any one of the preceding claims, characterized in that the plastic material in a preheating station in front of the plasma etching station is heated.
DE19944422996 1994-06-30 1994-06-30 Process for plasma etching plastic material Expired - Fee Related DE4422996C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19944422996 DE4422996C2 (en) 1994-06-30 1994-06-30 Process for plasma etching plastic material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19944422996 DE4422996C2 (en) 1994-06-30 1994-06-30 Process for plasma etching plastic material

Publications (2)

Publication Number Publication Date
DE4422996A1 true DE4422996A1 (en) 1996-01-04
DE4422996C2 DE4422996C2 (en) 1996-11-07

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Family Applications (1)

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DE19944422996 Expired - Fee Related DE4422996C2 (en) 1994-06-30 1994-06-30 Process for plasma etching plastic material

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998051136A1 (en) * 1997-05-07 1998-11-12 Robert Bosch Gmbh Method for metallizing at least one printed circuit board or at least one pressed screen and at least one hybrid

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3343704A1 (en) * 1983-12-02 1985-06-13 Siemens AG, 1000 Berlin und 8000 München METHOD AND DEVICE FOR SETTING HOLE GRID PLATES, ESPECIALLY FOR PLASMA CATHODE DISPLAY
DE4103959A1 (en) * 1991-02-09 1992-08-13 Fraunhofer Ges Forschung Prodn. of coated non-conductors esp. plastics - by suitably oxidising the surface to increase its electrical conductivity and then spraying electrostatically with liquid or powder

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3343704A1 (en) * 1983-12-02 1985-06-13 Siemens AG, 1000 Berlin und 8000 München METHOD AND DEVICE FOR SETTING HOLE GRID PLATES, ESPECIALLY FOR PLASMA CATHODE DISPLAY
DE4103959A1 (en) * 1991-02-09 1992-08-13 Fraunhofer Ges Forschung Prodn. of coated non-conductors esp. plastics - by suitably oxidising the surface to increase its electrical conductivity and then spraying electrostatically with liquid or powder

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998051136A1 (en) * 1997-05-07 1998-11-12 Robert Bosch Gmbh Method for metallizing at least one printed circuit board or at least one pressed screen and at least one hybrid
US6197208B1 (en) 1997-05-07 2001-03-06 Robert Bosch Gmbh Method for metallizing at least one printed circuit board or at least one pressed screen and at least one hybrid

Also Published As

Publication number Publication date
DE4422996C2 (en) 1996-11-07

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