DE4401476A1 - Magnetoresistive element serving as thin film magnetic head - Google Patents

Abstract

A magnetoresistive element is formed that provides a high magnetic resistance change factor and offers improved sensitivity through optimisation of the electrical resistance within a bias magnetising layer. The element (20) is formed with a copper layer (31), a bias magnetising layer (32) of manganese-iron with copper, nickel, palladium or cobalt, a nickel iron layer (33) with 82 atom per cent of nickel, a non-magnetic layer (34) and a cross bias magnetising layer (35). The element is used as a thin film magnetic head.

Description

The present invention relates to a thin film magnet Head and in particular a magneto-resistive playback to play a high density recording as well a magnetic induction recording element.

State of the art

Fig. 18 (a) is a summary cross section of a magnetic thin film magnetic head, wherein Fig. 18 (b) is a plan view showing the structure of a magnetoresistive element with respect to its information reproducing element, and Fig. 18 (c ) is a plan view showing the structure of a magnetic induction element with respect to its information recording element.

As shown in Fig. 18 (a), a thin-film magnetic head ( 100 ) used in fixed magnetic disk apparatuses consists of a display element (magneto-resistive element) ( 101 ) and a recording element (magnetic induction element) ( 102 ). The magneto-resistive element ( 101 ) comprises a layer ( 2 ) of a magneto-resistive material and an electrode layer ( 3 ) formed on a substrate ( 1 ) over an insulating layer ( 7 ). Both ends of the layer ( 2 ) of the magneto-resistive material are connected to the electrode layer ( 3 ) as shown in Fig. 18 (b). The magnetic induction element ( 102 ) consists of an upper ( 4 a) and a lower ( 4 b) core ( 4 ) of soft magnetic material, which are laminated on an insulating layer ( 8 ) on the magneto-resistive element ( 101 ), and a between the cores ( 4 a, 4 b) over an intermediate layer insulating layer ( 6 ) formed coil ( 5 ), wherein the coil ( 5 ) is helically wound, as shown in Fig. 18 (c).

A so-called "exchanged bias film" is formed by coupling a ferromagnetic layer to an antiferromagnetic layer. The coupling results in a "exchanged" or "exchanged bias" between these layers. This type of coupling is a quantum physical phenomenon whereby the hysteresis loop of the ferromagnetic layer is shifted along the H axis through an exchange anisotropy field H _ex . This shift leads to a "exchanged" Vormagneti sierungsfeld (Exchanged bias), which orients the direction of magnetic domains in the magneto-resistive film 2 c. The aligned magnetic domains do not cause Barkhausen noise due to the change in magnetization.

This exchanged coupling is further described by D. Mauri, E. Kay, David Scholl and J.K. Howard in J. Appl. Phys. Vol. 52, No. 7, p. 2929 ff. (1987), especially under I. Introduction and A. Exchange anisotropy.

Object of the invention

As shown in Fig. 19 (a), on the substrate ( 1 ) (including the insulating layer) of the magneto-resistive material layer ( 2 ) are successively laminated: a NiCr-based (auxiliary) layer ( 2 a), a Vormagneti ative alternating layer (2 b) of MnFe (50 atomic% with Mn in a ratio Ver), a layer (2 c) with magneto-resi stivem effect, consisting of a single-layer thin film of NiFe or NiFeCo Alloy consists of a Shuntvormagnetisie insurance layer ( 2 d) and a Quervormagnetisierungsschicht ( 2 e), wherein both ends of this transverse biasing layer ( 2 e) electrode layers ( 3 ), which are formed as part of the mag neto-resistive element ( 101 ). Ment in this Ele the base layer (2 a) is a layer orientation that Orien formed thereon bias alternating layer (2 b) controls: the bias alternating layer (2 b) is a layer that trolled the magnetization kon, to prevent the Backhausen-noise (2 c) by variations in the magnetization of the magneto-resisti ven layer caused by like an adjacent Neto-resistive layer with a Längsvormagnetisie approximate magnetic field provided (2 c), the makes magnetic domain a single domain; the magneto-resistive layer ( 2 c) is a layer that converts changes in the magnetic flux applied to the element into a sheet resistance factor; the lateral bias layer ( 2 e) is a layer which increases the amplitude of the reproduced output by providing the magneto-resistive effect layer ( 2 c) with a transverse bias magnetic field and superimposing a stray magnetic field at the optimum operational bias point; the shunt bias layer ( 2 d) is a layer that magnetizes the cross-bias layer ( 2 e) and adjusts the cross-bias field strength to the magneto-resistive effect layer ( 2 c).

If there is no particular problem with the orientation of the premagnetizing alternating layer ( 2 b), even if the layers except for the base layer ( 2 a) are formed directly on the substrate ( 1 ), then one after the other on the layer ( 2 ) magneto-resistive material laminated: the bias alternating layer ( 2 b), the magneto-resistive effect layer ( 2 c), the shunt bias layer ( 2 d), and the transverse magnetization layer ( 2 e) as shown in FIG. 19 (b). is shown. In Fig. 19 (c) is further shown that the lamination order of the layers that comprise the layer (2) of magneto-resistive material, the reverse may be reversed so that the transverse magnetization layer (2 e), the Shuntvormagnetisierungsschicht (2 d) , the layer ( 2 c) with magneto-resistive effect and the bias-change layer ( 2 b) in this order on the substrate ( 1 ) may be lami ned. Moreover, in the layer (2) may be made of like Neto-resistive material by 19 in Fig. (A) to (c) ge showed layer structure, the bias change layer (2 b) as part of the layer (2 c) with magneto-resistive Effect can be used (for example, as electrodes at both ends of the layer ( 2 c) with magneto-resistive effect).

In the exchange bias film ( 2 b) of the magneto-resistive material layer ( 2 ) having the above-mentioned laminar structure, an FeMn-based alloy is used as the antiferromagnetic layer, which has the same crystalline structure (cubic structure). face-centered phase) as the magneto-resistive effect layer ( 2 c) (NiFe alloy single-layer or NiFeCo single-layer thin film). However, as stated in Japanese Patent Application Laid-Open Nos. 4-21106 and 3-144909, alloys based on MnFe have low corrosion resistance. Moreover, in the magneto-resistive element using a single-layer MnFe as a bias-change layer, a part of the sense current applied to the magneto-resistive layer tends to be in spite of the direct contact between the magnetoresistive effect layer and the magneto-resistive layer Moisturizing alternating layer to be shunted to the bias alternating layer ( 2 b), since the electrical resistance in the MnFe -magnetisierungswechselschicht only about four times as high as in a layer with magneto-resistive effect on NiFe or the like. Therefore, the change of the output voltage ΔV is small.

It has been attempted to use an antiferromagnetic Co _x Ni _y O _1-xy layer or a ferrimagnetic Tb _1-z Co _z layer as a pre magnetization alternating layer ( 2 b) to improve the corrosion resistance, while the magnetic field with Improved and stabilized exchange (Applied Physics Letters, Vol 60, p 3060 (1992) and IEEE Transition Magnetics, Vol 25, p 3695 (1989).) The use of the above-mentioned material for the premagnetization alternating layer ( 2 b) requires an oxidation process during the production of the layer, which means that the number of manufacturing processes must be increased, and such a measure would also lead to increased manufacturing costs as rare-earth elements would be used.

On the other hand, artificial lattice layers structured by cyclic lamination structure have recently become common as magnetoresistive layers in which magnetic layers and non-magnetic conductive layers are alternately laminated more than two times. As shown in Fig. 20, a magnetoresistive element using this artificial mesh layer is constructed so that non-magnetic layers ( 12 ) of Cu and the like and magnetic layers ( 13 ) are exposed more than twice (in more than two lamination cycles) to one Base layer ( 11 ) of the substrate ( 1 ) are laminated, on which a protective layer ( 14 ) is formed (patent application 4-360009 disclosed). As shown in Fig. 21 (a), then, a structure may be adopted in which portions of the magnetic layer ( 13 ) are in contact with the bias alternating layers ( 15 ) or a structure shown in Fig. 21 (b ) and in which the bias alternating layers ( 15 ) are laminated on the bias alternating layers ( 12 ) so that the magnetic layers ( 13 ) are subjected to a longitudinal bias magnetic field controlling the magnetization and the Barkhausen orientation at each lamination cycle. Noise suppressed. When a magne to resistive layer having such an artificial lattice layer is compared with a magnetoresistive effect layer made of a NiFe alloy monolayer, the NiFe alloy layer, although having a magnetic resistance (MR) ratio of only 3% has a saturation magnetic field intensity (H _s ) which saturates the magnetic resistance at a level as low as several tens Oe or lower. Thus, it is a practical magneto-resistive element, while the magneto-resistive element layer using the artificial lattice film has a slightly higher MR ratio at 5%, although its saturation magnetic field strength (H _s ) is too high 100 Oe is. On the other hand, an excessively high saturation magnetic field strength (H _s ) reduces the magnetic field sensitivity to external magnetic fields. Accordingly, the saturation magnetic field strength (H _s ) must be further reduced if the artificial lattice layer is to be practically applied.

In Fig. 22 it is shown that a magneto-resistive element using another artificial lattice layer is built up so that an auxiliary layer ( 16 ) or a non-magnetic layer ( 12 ), a soft magnetic layer ( 17 ) than the ste he Magnetic layer, the non-magnetic conductive layer ( 12 ), a magnetic layer ( 13 ) as a second magnetic layer or the soft magnetic layer ( 17 ) and the Vormagnetisierungs- alternating layer ( 15 ) in a lamination cycle on the sub strate ( 1 ) are laminated in more is laminated as two lamination cycles. This artificial lattice layer can be in one direction, a magnetic anisotropy in the second magnetic layer ( 13 ) arise, which is the MnFe-Vormagnetisie ing exchange layer ( 15 ) closest. Therefore, the angle formed by the magnetization of the second magnetic layer ( 13 ) receiving magnetic anisotropy in one direction and the first magnetic layer ( 17 ) not receiving magnetic anisotropy changes after the magnetic field scattered from the medium (an external magnetic field ). In other words, when no external magnetic field is applied (H _ex = 0) as in Fig. 23, the angle formed by the magnetization of the adjacent magnetic layers is almost antiparallel (90 ° to 180 °); however, when an external magnetic field is applied (H _ex ≠ 0), the angle formed by the magnetization of the adjacent magnetic layers is almost parallel (90 ° or less), thereby enabling the magnetization to be controlled. In such an artificial lattice layer, a mechanism having a magneto-resistive effect is generated as a result of the spin-scattering effect of the spontaneous magnetization of the magnetic layer on conductive electrons. This effect is called macromagneto-resistive effect; if it does occur, then the magnetic response is sharp, and the saturation magnetic field strength (H _s ) is 100 Oe or less, although the magnetic resistance change factor is somewhat smaller (<5%).

This is because a MnFe layer having an electrical resistance is used which is four to ten times higher than that in the magnetic layer (NiFe layer) or unmag netic layer (Cu layer), whereby the total resistance value ρ of artificial grating layer (magneto-resistive composite layer) too high and thus the electrical resistance change factor Δρ / ρ is relatively small. When it is attempted to increase the magnetic resistance change factor to about 8%, a magnetic layer of, for example, Co having a thickness of 1 nm or less is formed adjacent to the non-magnetic conductive layer ( 12 ), thereby requiring complex film forming processes and increasing the manufacturing cost (Journal of Applied Physics, 69, (8) (1991) 4774 and the laid-open patent application 4-358310).

Incidentally, in order to reproduce a high-density recording in which the recording bit area is naturally micro-sized, a magneto-resistive element is required from which a high-amplitude reproducing output can be obtained from a weak external magnetic field (a stray magnetic field). In order to obtain such a high sensitivity, it is important to set an optimum bias point using a transverse bias layer at a point where the characteristic curve in the RH characteristic in Fig. 24 is sharply inclined; however, it is necessary to obtain a magnetoresistive effect layer having a steep slope RH characteristic. In order to obtain an RH characteristic with a steep slope, the electrical resistance change factor Δρ / ρ in the magneto-resistive-effect layer is increased and the saturation magnetic field strength (H _s ) is reduced, whereby the slope becomes steeper. Moreover, in order to increase the electrical resistance change factor Δρ / ρ, it is necessary to reduce the total resistance value ρ in the magnetoresistive effect layer and increase its resistance amount Δρ.

Fig. 25 (A) is a cross section of the magnetic induction element ( 102 ), and Fig. 25 (B) is a drawing for illustrating the circulating magnetic domain of the core ( 4 ) of the magnetic induction element ( 102 ). In Fig. 25 (A), the magnetic induction element ( 102 ) consists of a lower magnetic core ( 4 a), a magnetic gap (g), a coil ( 5 ), an insulating layer ( 6 ), an upper magnetic core ( 4 b) and a on the substrate ( 1 ) (in the order substrate ( 1 ), magneto-resistive ele ment ( 101 ) and insulating layer ( 8 )) formed protective layer ( 9 ). The lower magnetic core ( 4 a) and the upper magnetic core ( 4 b) form a magnetic circuit which is opened by a magnetic gap (g) on the head side. The coil ( 5 ) is wound with intermediate arrangement of the insulating layer ( 6 ); high-frequency magnetic recording signals are supplied to them. The protective layer (9) covering the top arranged at the uppermost part of the substrate (1) the magnetic core (4 b). In addition, the magnetic cores ( 4 a, 4 b) use soft magnetic thin films of high magnetic permeability imparted with uniaxial anisotropy, and their difficult axis is directed toward the magnetic circuit of the magnetic head. At present, permalloy alloys having magnetic saturation flux densities between 0.7 T and 0.8 T are generally used as the material for the magnetic cores ( 4 a, 4 b).

As a result of the trend towards a higher recording density, the magnetic core ( 4 ) of the magnetic induction element ( 102 ) now has to have a higher magnetic permeability even in high frequency zones of more than 10 MHz during the initial magnetization process. In addition, the search for magnetic materials having a higher magnetic saturation flux density is now being sought to meet the requirements of higher density data processing; in the discussion are an amorphous three-element alloy layer of cobalt (Co), hafnium (Hf) and tantalum (Ta) with a magnetic saturation flux density of 1.2 T or an amorphous alloy layer based on Co such as Co-Hf-Ta Pd.

If an external magnetic field ( 4 a, 4 b) via a through the Spu le ( 5 ) flowing magnetic recording signal to the Magnetker ne ( 4 a, 4 b) applied, then arises in the magnetic cores ( 4 a, 4 b) is a circumferential, prismatic magnetic domain, wherein at one end of the core (the head side) triangular Magneti cal domains are formed, as shown in Fig. 25 (b). Since the magnetization of this triangular domain is parallel to that of a medium, a discontinuous migration of the magnetic wall with respect to the high-frequency magnetic field occurs. On the other hand, since the magnetization in the hexagonal magnetic domain is longitudinal to that of the medium, a magnetization rotation occurs with respect to the high-frequency magnetic field. Thus, when the operating frequency for a magnetic head becomes higher as a result of data processing at higher speeds and densities, the time-based change in the magnetization produces a shift from that in the external magnetic field where the magnetic domain wall migrates due to the change in frequencies above some MHz as one of the features of a dynamic magnetization process stops.

Therefore, the initial magnetic permeability (the initial magnetization factor) of the magnetic cores ( 4 a, 4 b) decreases in high-frequency zones. In addition, stable reproduction becomes difficult because the migration of the magnetic domain wall is irreversible. However, the magnetization continues to move into higher frequency zones. This makes it necessary that the magnetic cores have a stable magnetic domain structure.

To solve this problem, a procedure can alternate the lamination of magnetic and non-magnetic bodies be used after this laminating ange ange can be taken so that the magnetic cores a single-domain can achieve magnetization. The IBM Disclosure Bulletin, Vol. 21, No. 11, 1979, p. 4367 discloses, for example, a Structure in which thin films of permalloy and silicon oxide are alternately laminated. This structure is aimed under the generation of triangular magnetic domains under Press and a single-domain magnetization using only to achieve hexagonal magnetic domains sandwiching a sufficiently thin layer of silicon oxide  is placed between the thin permalloy layers to the upper and lower permalloy layers are magnetically tight connect to each other, so that in the magnetization a Loop path is created. However, to fulfill the requirements of recent high-density data processing be used in the magnetic cores a material containing a high saturation magnetic flux density (B.) can be used because of a decrease in the saturation magnetic flux density (B.) The magnetic field for writing on the medium as well decreases.

Published patent application 4-214205 describes laminated soft magnetic Co alloy and silicon nitride layers having high magnetic saturation flux density materials. Such combinations provide good magetic characteristics. Incidentally, the lamination of a soft magnetic Co alloy with silicon nitride requires the use of a reactive sputtering method in the formation of silicon nitride films under an atmosphere of Ar + N ₂ . However, since it is necessary to suck nitrogen from a vacuum vessel into a sputtering apparatus prior to the formation of Co alloy layers, the entire film formation time is prolonged, resulting in higher manufacturing costs. This makes mass production difficult. Moreover, in forming the Co alloy layers under the atmosphere of Ar + N _2, nitrogen may be mixed in the Co alloy, resulting in a reduction of the magnetic saturation flux density.

Therefore, given the diverse problems, arises the one in the use of one with the above, forth conventional magneto-resistive element equipped thin layer magnetic head meets, the main task of the present Invention in the manufacture of a high sensitivity magneto resistive element that works well on a magnetic record the high density response by selecting the Layer materials for the premagnetization alternating layer, the magnetic layer and the non-magnetic layer optimized  becomes. The second object of the present invention is in the production of a magnetic induction element that too a recording at high speed and density in is capable of selecting the layer materials for non-magnetic layers is optimized, thus the formation of Layers by means of a sputtering process in an argon gas is enabled, so that the present invention, a thin layer magnetic head, which can be used for a recording playback and playback at high speed and high speed te is suitable.

Solution of the task

Magneto-resistive thin-film elements can be generalized in magneto-resistive elements with a layer of magneto resistive effect with a bias to a magnetic selschicht adjoining monolayer structure and in magneto resistive elements with a layer of magneto-resistive Divide the effect of an artificial grid layer, the laminated for more than two cycles with a lamination structure which are at least one to a bias change layer adjacent first magnetic layer, a non-magnetic conductive layer and a second magnetic layer on a sub stratoberfläche as a cycle, the inventions to solve the above-mentioned problems of building each Type has taken the first way. This means that the Premagnetization alternating layer of an alloy layer MnFe containing Mn at 50 atom%, with one or more Additional additives, Cu, Ni, Pd or Co in a maximum total concentration of 25 at%.

The premagnetization alternating layer described above can for example, using a direct current magnetron Sputtering, a RF magnetron sputtering or a deposition process are formed.

The present invention also includes a second embodiment in which the bias alternating layer in a magneto-resistive element having a layer having a magneto-resistive effect with a monolayer structure comprises an antiferro magnetic layer or a ferrimagnetic layer composed mainly of a magnetic thin film is composed of an Mn _A Co _1-A alloy, wherein the composition range of the magnetic thin film of the Mn _A Co _1-A alloy satisfies the condition: 0.5 <A <0.9. Co _1-A alloy is mixed with at least one of the elements Ru, Re, Ir, Pd, Fe, Ni or Cu - in this case that the magnetic thin film of the Mn _A is preferable. In addition, the magnetic thin film of the Mn _A Co _1-A alloy has a thickness of not more than 100 nm (1000 Å). The assumed path is characterized in that a magneto-resistive element having a magnetoresistive effect layer comprising an artificial lattice layer comprises a bias alternating layer composed of an antiferromagnetic layer or a ferrimagnetic layer composed mainly of a magnetization resistive layer magnetic thin film consists of a MnCo alloy.

The present invention also includes a third embodiment in which the magnetic layer in a magneto-resistive element having a magnetoresistive layer comprising an artificial lattice layer laminated with a lamination structure for more than two cycles, comprising at least a magnetic layer and a magnetic layer has a non-magnetic conductive layer as a cycle, a Fe _1-BC Cr _B Co _C alloy magnetic thin film, the nonmagnetic conductive layer made of Cu, Cr or CuCr, and the composition area of the Fe _1-BC magnetic thin film Cr _B Co _C alloy satisfies the following conditions: 0.05 <B <0.15 and 0.50 <C <0.60. The magnetic thin film preferably has a maximum thickness of not more than 30 nm (300 Å). The magnetic layer may have a magnetic layer of Fe _D Al _1-D alloy instead of the magnetic layer of the Fe _1-BC Cr _B Co _C alloy, wherein the Zusammensetzungsbe area of the magnetic thin film of the Fe _D Al _1-D alloy of the satisfies the following condition: 0.75 <D <0.95. Moreover, the magnetic layer may have a magnetic layer made of a Ni _E Co _1-E alloy rather than a Fe _1-BC Cr _B Co _C alloy magnetic thin film, and the composition range of the Ni _E Co ₁ magnetic thin layer may be _-E alloy satisfies the following condition: 0.70 <E <0.85. Moreover, the magnetic layer may more of a magnetic layer of an Fe Co _{F 1-F} alloy having as a magnetic thin film of an _{Fe-BC 1} -Cr _{B C} Co alloy, the composition range of the magnetic thin film of the Fe _F -Co _{1 -F} alloy satisfies the following condition: 0.65 <F <0.95. The various alloy magnetic layers mentioned above may be mixed with Ti, Ta and / or Ru at a maximum total concentration of 10 atomic%.

The present invention also includes a fourth embodiment in which the magnetic core in a magnetic induction element equipped with a magnetic core having a magnetic gap (g) has a laminated structure of alternating soft magnetic thin films and nonmagnetic thin films, the soft magnetic netic Thin film of an amorphous alloy with four elements of cobalt (Co), hafnium (Hf), tantalum (Ta) and Pal Ladium (Pd) is made, while the non-magnetic thin film ( 11 B) of silicon (Si), aluminum (Al ), Oxygen (O) and nitrogen (N). In this case, the composition ratio of cobalt (Co), hafnium (Hf), tantalum (Ta) and palladium (Pd) in the soft magnetic thin film in Co _(1-XYZ) Hf _X TayPd _{Z should} preferably be as follows: 3.0 X is 4.0 atom%, 4.5 Y is 5.5 atom%, and 1.3 Z is 2.3 atom%. In addition, the layer thickness of one layer in the soft magnetic thin film should be 150 nm (1500 Å) to 300 nm (3000 Å), the layer thickness of one layer in the non-magnetic thin film should be 5 nm (50 Å) to 15 nm (150 Å) and the number of layers of the soft magnetic thin film and the non-magnetic thin film should be even.

Finally, a thin-film magnetic head should be made by laminating  tion of a magneto-resistive element and a magnetic Induction element with the structure described above Herge be presented.

Effects of the invention

According to the first embodiment, in the magneto-resisti ven element with a layer with magneto-resistive effect with a monolayer structure described above, when the magnetic resistance layer with a constant Erfas is applied, the change in resistance in the magnetic resistance layer corresponding voltage change due to a change in the leakage magnetic field of a magnetic recording medium, and because the Direction of the stray magnetic field can be detected. Is now the biasing alternating layer of 50 atom% MnFe with a thin film of a three to sechselementlegierung built up the Cu, Ni, Pd or Co at a maximum total additional concentration of 25 atomic% or less, then it will be in a magneto-resistive element of this type difficult to attach to the layer of magneto-resistive Ef properly applied current to the bias change layer flows, as the electrical resistance in the Vormagneti switching layer higher than the electrical resist is in the MnFe layer, which in the conventional Premagnetization alternating layer was used. Since the in the layer with magneto-resistive effect flowing current with a fluctuation of the resistance value is greater works the increased current seems to increase the resistance level amount Δρ during the magnetic resistance ration factor Δρ / ρ is relatively increased and playback sensitivity is improved. It also differs the magnetic resistance effect in a magnetoresistive ven element, one of an artificial lattice layer existing layer with magneto-resistive effect used from that in the mechanism of the layer with magneto resistive effect with the above-mentioned single-layer structure, using a macromagnetic resistance effect,  the electron passing through the spinning diffusion tronen at the spontaneous magnetization of the magnetic Do menenwände in the magnetic layer is caused. If in the In this case, a biasing alternating layer of Mn with a thin film of a two- to four-element alloy is constructed, the Cu, Ni, Pd or Co at a maximum Total additive concentration of 25 atomic% or less, reduces the magneto-resistive element of this type the elek trical resistance ρ in the magneto-resistive layer vem effect overall, while the magnetic resistance tion factor (Δρ / ρ) relatively increased and the playback sensitive is improved. With each type of structure carries the improvement playback sensitivity more clearly for playback of high density records.

According to the second embodiment, if the layer with magneto-resistive effect a magnetic layer with a Layer is better, the magnetization of the magnetic layer con be trolled, resulting in the creation of a magneto-resistive Elements with a high magnetic resistance change factor and high magnetic sensitivity over the Use of an antiferromagnetic layer or a ferrimagnetic layer mainly of MnCo in mag netlayer leads. In addition, the premagnetization Alternating layer has a high corrosion resistance as it not made from an alloy based on FeMn is. In addition, the heat resistance can be further improved sert by at least one of the elements Ru, Re, Ir, Pd, Fe, Ni or Cu is added. Is beyond that the Layer with magneto-resistive effect an artificial lattice layer, then the magnetic anisotropy of the magnet layers are controlled in each sublayer, resulting in Creation of a high magnetic resistance change factor leads to the improvement of the magnetic sensation serves if an antiferromagnetic layer or a ferrimagnetic layer mainly of MnCo in the Premagnetization alternating layer is used. additionally can also be a reduction in manufacturing costs errei  chen, since the oxidation process can be omitted.

According to the third embodiment, the magnetic resistance change factor can be increased because the magneto-resistive layer uses an artificial lattice layer in which a magnetic layer having a magnetic thin film containing an Fe _{1 -BC} Cr _B Co _C alloy (cobalt, chromium and iron ), a magnetic layer comprising a magnetic layer comprising a Fe _D Al _1-D alloy (aluminum and iron), a magnetic layer comprising a Ni _E Co _1-E alloy, a magnetic layer containing an Fe _F Co _{1 -F} -Legierung, and a non-magnetic conductive layer of copper (Cu), chromium (Cr) or CuCr (chromium copper) are laminated alternately more than twice, wherein the composition range of the magnetic thin film of Fe _1-BC Cr _B Co _C Alloy is 0.05 <B <0.15 and 0.50 <C <0.60, the composition range of the magnetic thin film of Fe _D Al _1-D alloy is 0.75 <D <0.95 , the composition range of the magnetic thin film a The Ni _E Co _1-E alloy is 0.70 <E <0.85 and the composition range of the Fe _F Co _1-F alloy magnetic thin film is 0.65 <F <0.95 the magnetic resistance change factor is increased. It can be obtained by five or more percent higher mag netic resistance change factor than in the herkömmli chen cases. In addition, with the present magnetic resistance body, the magnetic sensitivity can be increased by adjusting the thickness of the nonmagnetic conductive layer, using the bias alternating layer to control the magnetization of the magnetic layers in each sub-layer, and FeNi soft magnetic layers and the like the other magnetic layers are used. For example, by using a thin film of FeCrCo alloy or FeAl alloy or NiCo alloy or FeNi alloy in a relatively low magnetostriction (<10 ^-6 ) composition range for magnetic layers, the variation in saturation magnetic field strength (magnetic field sensitivity) can be exhibited ) of the magnetic resistance induced by the inverse magnetostriction effect resulting from the stress generated at high magnetic constant of the film and applied to the film, or the fluctuation in the characteristics of the mass-produced elements can be reduced which improves reliability. As a result, non-defective product factors can be improved. Incidentally, by using an ion beam sputtering method having a higher film formation speed than that of the molecular beam deposition to form the magnetic layer and the non-magnetic conductive layer, the manufacturing cost of the magnetoresistive effect layer can be reduced. Moreover, if the alloy magnetic layers of the above-mentioned type comprise Ti, Ta and / or ruthenium (Ru) at a maximum total concentration of 10 atomic% or less, then the corrosion resistance of the magnetoresistive effect layer can be improved.

According to the fourth embodiment, since the magnetic core in the magnetic induction element has a laminated structure in which soft magnetic thin films and unmagnetic thin films are laminated, and moreover, the soft magnetic thin film of an amorphous four-element alloy of Co _(1-XYZ) Hf _X TayPd _Z , while the magnetic thin film is made of Si, Al, O and N, a drop in magnetic permeability is kept to a minimum as the write frequency becomes high as a result of using a higher speed and a higher density in data processing has become. In particular, since the magnetic core laminated with an even number of soft magnetic thin films and non-magnetic thin films uses a stable single magnetic domain structure, the migration of the magnetic domain wall can be better controlled, and any decrease in magnetic permeability can be kept to a minimum, thus rendering the element suitable for high speed and high density recording. In addition, since a non-magnetic thin film can be continuously formed by a sputtering method in an argon atmosphere, the manufacturing cost can be reduced.

Description of the embodiments

In the following, the different embodiments of the present thin-film magnetic head explained.

Fig. 1 (a) is a sectional view showing the structure of the magnetoresistive element according to a first embodiment of the present invention.

The magneto-resistive element ( 20 ) of this embodiment has a laminated structure in which a NiCr layer as an auxiliary layer ( 31 ), a bias-change layer ( 32 ) with Cu, Ni, Pd or Co in a MnFe base, a used as a magnetic resistance layer ( 33 ) Ni-Fe layer (82 atomic% Ni), a nonmagnetic layer ( 34 ) and a transverse magnetization layer ( 35 ) consisting of a Shuntvormagne tisierungsschicht or a soft magnetic Vormagnetisie tion layer, on a substrate ( 1 ) are laminated. In this structure, the auxiliary layer ( 31 ) accelerates the growth of the crystalline structure of the premagnetization change layer ( 32 ) formed thereon in cubic-surface-centered structure. In such a magneto-resistive element ( 20 ), the directions of stray magnetic flux from a magnetic recording medium are detected by utilizing the electrical impedance of the mago-resistive effect layer ( 33 ) due to a change in the stray magnetic field of FIG changes the magnetic recording medium. In other words, since the electrical impedance of the magnetoresistive effect layer ( 33 ) changes as the stray magnetic field from the magnetic recording medium changes under a condition where a constant measuring or sensing current is applied to the layer ( 33 ) is applied with magneto-resistive effect, one of the resistance change tion corresponding voltage change can be obtained, whereby the magnetic flux direction can be detected. The transverse biasing layer ( 35 ) is set to a premagnetization point which makes the cross-bias magnetic field very suitable for the magneto-resistive effect layer ( 33 ).

A non-magnetic layer 34 sets its transverse magnetic field. The bias alternating layer (32) with the layer (33) having magneto-resisti vem effect directly in contact and applies the layer (33) with magneto-resistive effect field Längsvormagnetisierungs magnet to to ensure that the layer ( 33 ) having a single magnetic domain and suppressing the generation of magnetic domains generated by their multi-magnetic domain texture and the Barkhausen noise attributable to the migration of the magnetic domain wall.

Since the bias alternating layer ( 32 ) is laminated directly to the magneto-resistive effect layer ( 33 ), when a part of the detection current applied to the magnetoresistive effect layer ( 33 ) can be introduced into the connected connection layer ( 32 ). shuntet, no high voltage change (reproduction output) is obtained from the magnetoresistive effect layer ( 33 ). Therefore, in this embodiment, the bias layer ( 33 ) is formed as a multi-element alloy thin film containing additives such as Cu, Ni, Pd or Co in a MnFe alloy having 50 at% Mn and a maximum total addition concentration of 25 at%.

Such a bias alternating layer ( 32 ) is formed by an ion beam sputtering method under the following film forming conditions:

Film formation conditions Argon gas pressure P _Ar = 1.0 × 10 ^-4 Torr acceleration voltage V _ACC = 0.5 kV acceleration current I _ACC = 120 mA substrate temperature T _SUB <43 ° C target 15.2 cm (6 '') ⌀ (purity 99.9% or more)

The composition of the formed under these conditions bias change layer (32) shows ge in Table 1, and the composition range in which the Vormagne tisierungs exchange force layer of the bias change (32) is obtained, is in the by the arrow in Table 1 defined area.

Table 1

That is, it has been found that a magnetic field with exchanged bias in an alloy with Cu added at about 4% to 11 at% in MnFe at 50 at% Mn, in an alloy with Ni having about 11 to 20 at% to MnFe of 50 at% Mn is added in an alloy with Pd added at about 10% to 20 at% to MnFe at 50 at% Mn and an alloy with Co , which is added at about 5 at.% to MnFe at 50 at.% Mn, can be obtained by lamination on the NiFe layer. As a result, the functions of a layer ( 32 ) with exchanged bias (bias change layer) can be obtained.

In addition, it has been confirmed that in the composition range of the compositions shown in Table 1, in which a magnetic field with exchanged bias could be obtained, each of the alloys (MnFeCu, MnFeNi, MnFePd and MnFeCo) has a higher electrical resistance than the MnFe Alloy with Mn at 50 atom% (two elemental alloy). Thus, since the electrical resistance in the bias alternating layer 32 is much higher than the electric resistance in the MnFe layer having Mn at 50 at% used as a bias alternating layer in a conventional magnetic head, longitudinal bias may be used to the magento-resistive effect layer 33 , and moreover, it becomes more difficult for the magnetoresistive effect layer ( 33 ) to shunt into the bias-change layer ( 32 ). Since a large change in the output voltage (How dergabausgang) from a small detection current, the sensitivity can be verbes fibers with reduced energy consumption.

In addition, the composition of MnFe with Mn can be 50 atomic% mixed with Cu, Ni, Pd or Co as the shed connection layer ( 32 ) not only in the magneto-resistive element ( 20 ) shown in FIG. 1 (a) . but also used in the magneto-resistive elements ( 21 , 22 ) constructed as shown in Figs. 1 (b) and (c). That is, a structure is applied in which, as in the magneto-resistive element ( 21 ) shown in Fig. 1 (b) (a variant of the first embodiment), the bias alternating layer ( 32 ), the layer ( 33 ). with magneto-resistive effect, the nonmagnetic layer ( 34 ) and the transverse biasing layer ( 35 ) are laminated in this order without forming an auxiliary layer ( 31 ) on the substrate ( 1 ). In this case, the substrate ( 1 ) may be used instead of the auxiliary layer ( 31 ) for controlling the crystalline structure of the bias-change layer ( 33 ). On the other hand, the lamination sequence of Fig. 1 (a) is reversed in the magneto-resistive element ( 22 ) shown in Fig. 1 (c) (another variant of the first embodiment), so that the transverse magnetization layer ( 35 ), the non-magnetic layer ( 34 ), the magnetoresistive effect layer ( 33 ) and the premagnetization change layer ( 32 ) are laminated on the substrate ( 1 ) in this order. In this case, the NiFe layer used as the magneto-resistive effect layer ( 33 ) can be used to control the crystalline structure of the bias-change layer ( 32 ).

Since, as described above, in magneto-resistive elements ( 20 , 21 , 22 ) using magneto-resistive effect layers ( 33 ) in a single-layer structure, the MnFe-alloy bias changeover layer ( 32 ) has Mn of 50 Atomic% is a multi-element alloy thin film with additions of Cu, Ni, Pd or Co at a maximum total concentration of 25 atomic%, the electric resistance in the bias alternating layer ( 33 ) is higher than that of the conventionally constructed one; whereby highly sensitive magnetic reproduction characteristics can be obtained.

Fig. 2 is a sectional view showing the structure of a magneto-resistive element according to a second embodiment of the present invention.

The magneto-resistive element ( 23 ) of this embodiment has a multilayered magneto-resistive layer ( 40 ) composed of an artificial lattice layer used as a magneto-resistive layer. That is, as shown in Fig. 2, the magneto-resistive element ( 23 ) has a structure in which an auxiliary layer ( 31 ), a multilayer artificial lattice layer ( 40 ) having a magnetoresistive effect, a nonmagnetic layer ( 34 ) and a transverse magnetization layer ( 35 ) in this order on a substrate ( 1 ) lami ned are, wherein the layer ( 40 ) with magneto-resistive effect, as shown in Fig. 3, an artificial lattice layer, which is laminated more than two cycles, wherein the layer sequence in a lamination cycle consists of a Cu layer or a Cr layer as a non-magnetic conductive layer ( 45 ), a NiFe layer, an Fe layer, a Co layer or a FeCo layer. Layer as the first magnetic layer ( 44 ), a Mn-based bias changeover layer ( 43 ) containing Cu, Ni, Pd or Co as additives, a Cu layer or a Cr layer as the nonmagnetic conductive layer ( 45 ) and a NiFe layer, an Fe layer, a Co layer or an FeCo layer as the second magnetic layer ( 46 ) deposited in this order on a substrate ( 41 ) (including the substrate ( 1 ) and the auxiliary layer ( 31 )). Also in the magneto-resistive element ( 23 ) having such a structure, the directions of stray magnetic field from a magnetic recording medium in the magnetoresistive effect layer ( 40 ) can be detected by changes in electrical resistance resulting from changes in the magneto-resistive layer Stray magnetic field of the magnetic recording medium yield. In other words, if a constant detection current is applied to the magneto-resistive effect layer ( 40 ) via an electrode layer, the voltage can be changed to correspond to the resistance change in the magnetoresistive effect layer ( 40 ). The transverse biasing layer ( 35 ) applies a transverse bias magnetic field to the magneto-resistive effect layer ( 40 ) and sets an optical bias point.

The bias alternating layer ( 43 ) in the magnetoresistive effect layer ( 40 ) of the artificial lattice layer can control the direction of magnetization so as to impart anisotropy in one direction to the first magnetic layer ( 44 ) formed thereon. On the other hand, the magnetization of the first ( 44 ) and second ( 46 ) magnetic layers in the magneto-resistive layer as shown in Fig. 23 is in anti-parallel between the magnetization of the second magnetic layer ( 46 ) in the upper layer and the Mag oriented in the lower layer of the second magnetic layer ( 46 ), wherein the two layers sandwich a unmagnetic conductive layer ( 45 ) when no external magnetic field (H _ex ) is applied (demagnetizing ter state, H _ex = 0), ie antiparallel is oriented through each partial layer, and on the other hand is oriented in parallel when the external magnetic field (H _ex ) is applied. Accordingly, if an external magnetic field is applied or, in other words, the stray magnetic field changes from the magnetic recording medium, then the spontaneous magnetization in the interface between the first ( 44 ) and second ( 46 ) magnetic layers in the layer ( 40 ) causes with magneto-resistive effect, a sputtering of the conductive electrons, whereby a macro-magnetic resistance effect occurs and the electrical resistance changes in the layer ( 40 ) with magneto-resistive effect.

In such a magneto-resistive element ( 23 ) having an artificial lattice layer as the magnetoresistive effect layer ( 40 ), it was checked that the bias change layer ( 43 ) changes the size of the resistivity change in the layer (FIG. 40 ) magnetic field required magnetic effect reduces, whereby it satisfactorily saturates them and thus increases their sensitivity. At the same time, like the nonmagnetic conductive layer 45, it has the function of reducing the total resistance value (ρ₀) of the magneto-resistive layer 40 , while increasing the magnetic resistance change factor Δρ / ρ, which increases the ratio the resistance change (Δρ) in the magnetic layer to the total resistance be indicated.

In this embodiment, a premagnetization exchange layer ( 43 ), an artificial layer, is formed as an alloy containing pure Mn and containing Cu, Ni, Pd or Co at a maximum total addition concentration of 25 at%. Here, the bias change layer ( 43 ) is formed under the following film formation conditions by an ion beam sputtering method:

Film formation conditions Argon gas pressure P _Ar = 1.0 × 10 ^-4 Torr acceleration voltage V _ACC = 0.5 kV acceleration current I _ACC = 120 mA substrate temperature T _SUB <43 ° C target 15.2 cm 6 '' ⌀ (purity 99.9% or more)

The composition of the premagnetization change layer ( 53 ) formed under these conditions is shown in Table 2, and the composition range in which the pre-aging alternating force is obtained is in the range defined by the arrow in Table 2.

Table 2

That is, it has been found that the magnetic field with exchanged bias in an alloy of Cu added at about 4 to 15 at% of Mn in an alloy with Ni containing about 14 to 25 at Mn is added in an alloy with Pd added at about 13 to 25 atomic% to Mn, and an alloy with Co added at about 9 to 39 atomic% to Mn, respectively, on the NiFe layer laminated, wherein the alloys of these compositions can be used as a premagnetization exchange layer ( 43 ).

In addition, with the composition in which the Vormag netisierungs- change performance could be obtained, it has been found from the compositions shown in Table 2 that each alloy (MnCu, MnNi, MnPd and MnCo) a higher electrical resistance than pure Mn, but a low has a higher electrical resistance than the MnFe alloy conventionally used in the bias alternating layers. For this reason, the resistance ρ in the magnetic resistance layer ( 40 ) is reduced overall, whereby the magnetic resistance change factor obtained by the magnetoresistive element ( 23 ) becomes relatively larger. Therefore, the reproduction sensitivity can be improved. In addition, since the magnetoresistive effect layer ( 40 ) is laminated in more than two cycles, the lamination structure is formed in a lamination cycle from the non-magnetic conductive layer ( 45 ), the first magnetic layer ( 44 ), the non-magnetic conductive layer ( 45 ), the bias change layer ( 43 ) and the second magnetic layer ( 46 ), the combined resistance of the layer ( 40 ) with magneto-resistive effect is small overall, since the resistor structure is connected pa rallel. Therefore, the magnetic resistance change factor is high.

In addition, the composition of the bias alternating layer ( 43 ), Mn mixed with Cu, Ni, Pd or Co, can be used not only in the magneto-resistive element ( 23 ) having the lamination structure shown in Fig. 2, but also in Figs magneto-resistive elements ( 24 , 25 ) constructed as shown in Figs. 4 (a) and (b). That is, the magnetoresistive element ( 24 ) shown in Fig. 4 (a) is constructed so that the magneto-resistive effect layer ( 40 ) of the artificial grid layer shown in Fig. 3 on the substrate ( 1 ) without An auxiliary layer ( 32 ) is formed and then a non-magnetic layer ( 34 ) and a transverse biasing layer ( 35 ) are laminated on. On the other hand, the magneto-resistive element ( 25 ) shown in Fig. 4 (b) is constructed so that the lamination sequence shown in Fig. 4 (a) is reversed so that the perpendicular magnetization layer ( 35 ) is formed on the substrate ( 1 ) and the nonmagnetic layer ( 34 ) and the magnetoresistive effect layer ( 40 ) of the artificial lattice layer are laminated thereon.

As above with reference to the first and second embodiments described is a magneto-resistive element that the Emp can improve sensitivity, realized by the fact that the composition in the bias alternating layer which is changed to the Vormagnetisierungs Wechselelsi Stung acts, with their electrical resistance verbes sert becomes. The layers can not only by the ions beam sputtering but also by a direct current magnetron sputtering method, an RF magnetron sputtering method and a deposition process are formed.

In addition, the addition amount of Cu, Ni, Pd or Co to Mn is on a total additive concentration of 25 at% or less set so that the premagnetization change function is available and the electrical resistance in the pre magnetization alternating layer to a suitable level can be adjusted, whether an addition or Kombina additions of additives.

Fig. 5 is a sectional view showing graphically the layer structure of the magneto-resistive element according to a third Ausfüh tion of the present invention.

The magneto-resistive element ( 26 ) of this embodiment is constructed to include a single-layered magneto-resistive layer, wherein the magneto-resistive layer layer ( 51 ) having a single-layered structure having a thickness of 30 nm mainly made of NiFe and a connected interconnection layer ( 52 ) having a thickness of 50 nm, an antiferromagnetic layer or a ferrimagnetic CoMn alloy layer are laminated on a substrate ( 1 ) in this order. The biasing alternating layer 52 is a layer that controls the magnetization of the magnetoresistive effect layer 51 as described above. Although not shown, a transverse magnetization layer, optionally a base layer and a Shuntvormagnetisierungsschicht are gebil det thereon.

The thin film of this embodiment was used produced by the ion beam sputtering method. However, you can also a common deposition process, a sputtering method or a molecular beam deposition method ver be used. The film forming conditions are as follows:

Film formation conditions Argon gas pressure P _Ar = 1.0 × 10 ^-4 Torr acceleration voltage V _ACC = 0.5 kV braking power -200 V acceleration current I _ACC = 120 mA substrate rotation 3 revolutions per min substrate temperature T _SUB <45 ° C Magnetic field applied to the substrate 100-300 Oe target CoMn, NiFe (purity 99.9% or more) chip Ru, Re, Ir, Pd, Fe, Ni, Cu

The thin-film manufacturing substrate ( 1 ) may be made of glass, ceramic such as Al ₂ O ₃ -TiC, magnesium oxide or silicon. In order to improve the flatness of the surface of the substrate ( 1 ) and to control the orientation, a thin film of NiCr transition metal alloy of the like may be formed to a thickness of 5 nm (50 Å) or more as a base layer. In addition, the substrate may be heated (heat-treated) to improve the flatness of the base layer and to clean the substrate, and be irradiated with ions when the layers are formed.

In the layer structure of this embodiment shown in Fig. 5, it has been observed experimentally that as a result of the magnetic field with exchanged Vormagnetisie tion between the layer ( 51 ) with magneto-resistive effect and the bias alternating layer ( 52 ) in the Layer ( 51 ) with magneto-resistive effect developed a unidirectional mag netic anisotropy.

Fig. 6 shows the change in the magnetic field with exchanged ter bias (He ₁ ) against the Mn composition ratio (A) of the bias change layer ( 52 ). As can be seen in this figure, a magnetic field with an exchanged bias occurs at 0.5 <A <0.9, and its maximum value (He ₁ ) appears at A≈0.7. In a one-layer magneto-resistive layer using FeMn in the bias change layer, He ₁ is about ≈20 Oe, and a He ₁ of about 20 Oe could be obtained even if a thin film is used as in the present embodiment is made of a two-element alloy of MnCo for the bias alternating layer. Such a construction can provide not only a magneto-resistive element with the prevention of Barkhausen noise, but also an element with excellent corrosion resistance, since the bias alternating layer is not made of FeMn-based alloy.

As shown in Fig. 5, the fourth embodiment is just if a magneto-resistive element with a layer with magneto-resistive effect with a simple structure, but it differs from the third embodiment in that the bias alternating layer, the predetermined Ele is a thin film of a two-element alloy of MnCo. This element is manufactured by the same method as in the third embodiment. As shown in the last point of the film forming conditions, the only difference is that the premagnetization exchange layer is formed by using a target obtained by supplying additional elements (Ru, Re, Ir, Pd, Fe, Ni, Cu) the MnCo target by chips (with forms of 5 × 5 × 1 t, 3 × 3 × 1 t) is added.

Fig. 7 shows the results of a heat resistance test on the FeMn, MnCo and MnCoRu magnetic alternating layers. This heat resistance test was to hold test pieces at a temperature in the range of between 100 ° C and 400 ° C for about one hour after air was evacuated to build up a pressure of 3.0 × 10 ^-5 Torr or less. and then taking out the test pieces in a normal atmosphere to measure the magnetic field with switched bias. In the case of a Vormag netisierungs alternating layer of Ru, the magnetic field with exchanged premagnetization at high temperatures did not fall below that of any of the premagnetization change layer, which did not include Ru (FeMn and MnCo layers), and it was demonstrated that the heat resistance was improved. The MnCo layer has better heat resistance in the magnetic field with exchanged bias than the FeMn layer.

Fig. 8 is a sectional view showing graphically the structure of the magnetoresistive effect layer of the magneto-resistive element according to a fifth embodiment of the present invention.

This embodiment is an example of a magneto-resistive element that uses a magneto-resistive effect layer ( 60 ) as an artificial grid layer that has been laminated for more than two cycles, with a non-magnetic conductive layer ( 65 ) in a cyclic configuration. a first magnetic layer ( 64 ), a Vormagnetisierungs alternating layer ( 63 ), a non-magnetic conductive layer ( 65 ), a second magnetic layer ( 66 ) and a non-magnetic conductive layer ( 67 ) on the auxiliary layer ( 62 ) of a substrate ( 61 ) laminated. Thus, for example, under the designation SUB / [Cr (5) / Fe (2)] 30, it shows an artificial lattice layer having a structure laminated over 30 cycles with a Cr layer having a thickness of 0.5 nm (5 Å) and then an Fe layer with a thickness of 0.2 nm (2 Å) on a substrate (SUB) as a lamination cycle. The layer constitution of the magnetoresistive effect layer ( 60 ) in this embodiment is expressed as SUB / Fe (50) [/ Cu (20) / NiFe (30) / CoMn (50) / Cu (20) / Ni-Fe (FIG. 30)] 2, as shown in Table 3. That is, as shown in FIG. 8, it is an artificial gate layer having an Fe layer with a thickness of 5 nm as an auxiliary layer ( 62 ), which is the crystalline structure on the upper layers of the Substrate ( 61 ) is formed, and it is laminated more than two cycles with a structure for a cycle in which the unmagnetische conductive layer ( 65 ) of Cu with a thickness of 2 nm, the first magnetic layer ( 64 ) of NiFe 3 nm thick, the thin film CoMn alloy bias layer ( 63 ) having a thickness of 5 nm, the Cu nonmagnetic conductive layer ( 65 ) having a thickness of 2 nm, and the second magnetic layer 66 NiFe having a thickness of 3 nm are laminated on the auxiliary layer 62 . In contrast, Example (1) in Table 3 shows a case where the mag neto-resistive layer is a single-layered NiFe layer. Example (2) shows a case where the magnetoresistive layer is an artificial lattice layer although it comprises an Fe layer having a thickness of 5 nm as an auxiliary layer ( 62 ) to which the artificial lattice layer is laminated in two cycles, wherein in the construction of one cycle, the unmagnetic conductive layer ( 65 ) of Cu having a thickness of 2 nm, the first magnetic layer ( 64 ) of NiFe having a thickness of 3 nm, the non-magnetic conductive layer ( 65 ) of Cu having a thickness of 2 nm, the FeMn alloy thin film bias magnetic switching layer ( 63 ), the second magnetic layer ( 66 ) of NiFe having a thickness of 3 nm are laminated on the auxiliary layer ( 62 ) in this order. This embodiment is characterized in that it uses a CoMn alloy thin film instead of a FeMn alloy thin film as used in the premagnetizing change layer ( 63 ). In this embodiment, the magnetic resistance change factor (MR ratio) can be up to 7%, which is more than in the case of the other example (2) and which makes it possible to amplify the re-output signal output. Although the saturated Mag netfeld (H _s ) of the magnetic resistance is slightly higher (at about 20 Oe) than in the examples (1) and (2), even with a magnetic field value of this degree, a mag netic sensitivity can be obtained for a practical use is high enough. In addition, since no Oxidationsverfah ren is required, low manufacturing costs can be realized.

Table 3

Characteristics of the magneto-resistive layer

Fig. 9 is a cross section showing graphically a magneto-resistive effect layer consisting of the artificial gate layer of the magneto-resistive element according to the sixth embodiment of the present invention.

The magneto-resistive effect layer ( 27 ) in this embodiment consists of a base layer ( 72 ) disposed on a substrate ( 71 ), a non-magnetic conductive layer ( 73 ), and a magnetic layer ( 74 ) attached thereto in this order are laminated, as well as a thereon arrange th protective layer ( 75 ). The thin films ( 71 ), ( 72 ), ( 73 ) and ( 74 ) are made in this embodiment by the ion beam sputtering method. However, the preparation need not be limited to this method, since a usual deposition method, a sputtering method or a molecular beam deposition method can also be used. The film forming conditions are as follows:

Film formation conditions Argon gas pressure P _Ar = 1.0 × 10 ^-4 Torr acceleration voltage V _ACC = 0.5 kV braking power -200 V acceleration current I _ACC = 120 mA substrate rotation 3 revolutions per min substrate temperature T _SUB <45 ° C target FeCoCr, FeAl, NiCo, FeCo, Cu, Cr, FeMn (purity 99.9% or more)

The thin film forming substrate ( 71 ) may be made of glass, ceramic such as Al ₂ O ₃ TiC, magnesium oxide or silicon. The substrate surface can be cleaned by substrate heating or reverse sputtering. The flatness of the substrate surface can be improved by forming a transition metal thin film or a transition metal alloy thin film having a thickness of 50 nm (500 Å) or more on the base layer ( 72 ). In addition, the flatness of the base layer ( 72 ) can be improved, and the substrate surface can be cleaned by substrate heating and reverse sputtering or Aufbringen a substrate bias during the formation of the layers. The layers can be heat treated after their formation.

In this case, the magnetic layer 74 uses a thin film of Fe _{1 -BC} Cr _B Co _C alloy, a thin film of Fe _D Al _1-D alloy, a thin film of Ni _E Co _1-E alloy , a Fe _F Co _1-F alloy thin film or a Fe _G Ni ₁ -G alloy thin film, all exhibiting a thin film, magnetic distortion constant of 10 ^-6 or less in the vicinity of those shown in Table 4 Have composition. Therefore, in the embodiment of this embodiment, the magnetic resistance change factor can be increased.

Table 4

Alloy compositions at a magnetic distortion constant of 10 ^-6 or less

In addition, to improve the magnetic permeability of each magnetic layer ( 74 ) and the uniform layer structure as well as for micronizing the crystal grains Ti, Ta, Ru or the like, at most 10 atomic% can be added. In addition, the use of a Cu, Cr, or CuCr alloy thin film is effective for the nonmagnetic conductive layer 73 , the thin film having a composition that maximizes the magnetic resistance change factor of the layers as a whole by adding to the resistance factor the magnetic layer ( 74 ) fits. The magnetic layer ( 74 ) and the nonmagnetic conductive layer ( 73 ) should preferably have a layer thickness of more than 0.5 nm (5 Å) and less than 200 nm (20 Å), so that these layers remain flat and so many Magnetic layers ( 74 ) and magnetic non-magnetic layers ( 73 ) may be arranged in the average clear path for conducting electrons, while the spin scattering is made more active by allowing a high number of conductive electrons to cross the interfaces of the thin films.

Fig. 10 is a cross section showing graphically a magnetic resistance effect layer consisting of an artificial mesh layer of the seventh embodiment of the present invention.

The magneto-resistive effect layer ( 28 ) of this embodiment is constructed by lamination of more than two cycles with a simple cyclic structure in which a nonmagnetic conductive layer ( 81 ), a first magnetic layer ( 82 ), a bias alternating layer (FIG. 83 ), an unmagnetic conductive layer ( 84 ) and a second soft magnetic layer ( 85 ) are laminated in this order and comprise a bias alternating layer ( 83 ) for controlling the magnetization of the sublayers. This premagnetization exchange layer ( 83 ) is made of FeMn (manganese · iron), CuMn (manganese · copper), NiMn (nickel · manganese), CoMn (cobalt · manganese) or PdMn (palladium · manganese). In some cases, it is laminated with a magnetic layer of a cubic face-centered phase such as NiFe, which matches the material of the magnetic layer ( 82 ). The bias alternating layer ( 83 ) is further selected so that the magnetic resistance change factor of the layers is maximized overall in such a way that it matches the resistance factor of the magnetic layers ( 82 ) and ( 85 ). In contrast, ver the second soft magnetic layer (85) applies a layer of an Fe Ni _{G-1 G} alloy.

The magnetic resistance change factor and the saturation magnetic field strength of the magnetic resistance of how layers described above [magnetic layer / non-magnetic conductive layer] are in Ver shown in equation 5. The values of a conventional Lami nierungsmethode are with those in the embodiments of the present invention.  

In Table 5 then z. For example, the designation [Cr (50) / Fe (20)] 30 is a multilayer magnetic layer consisting of a laminated structure having a single lamination structure laminated over 30 cycles, in which a magnetic wiring layer Cr having a thickness of 5 nm (FIG. 50 Å) is formed on a substrate ( 1 ), and then an Fe magnetic layer having a thickness of 2 nm (20 Å) is laminated thereon. In addition, the layers formed are heated at a predetermined temperature for one hour in a magnetic field to examine the temperature at which the magneto-magnetic resistance disappears, and this temperature has been defined as a heat resistant temperature. This temperature is preferably as high as possible in order to stabilize the characteristics of the element and to improve its reliability in operation, in view of the heat treatment indispensable for the production of a thin film magnetic head.

In Table 5, Comparative Examples (1), (2) and (3) are cases where a conventional lamination method was used. Embodiments 1, 2, 4, 5, 7, 8, 10, 11, 13, 14, 16, 17, (19), (20), (22) and (23) relate to the laminated structure shown in Fig. 9 and are examples of magnetic layers / non-magnetic conductive layers having various materials and thicknesses. Moreover, the embodiments (3), (6), (9), (12), (15), (18), (21) and (24) relate to the laminated structure shown in Fig. 10 and show examples of the non-magnetic ones conductive layer ( 81 ) / magnetic layer ( 82 ) / premagnetizing alternating layer ( 83 ) / non-magnetic conductive layer ( 84 ) / magnetic layer ( 85 ) having different materials and thicknesses.

Table 5

Various characteristics of the layer with magnetoresistive effect

The present magnetoresistive effect layers are thus constituted such that a magnetic layer of a magnetic thin film of Fe _1-BC Cr _B Co _C alloy having a thickness of 30 nm (300 Å) or less, a magnetic layer of a magnetic thin film of a Fe _D Al _1-D alloy, a magnetic layer of a thin film of a Ni _E Co _1-E alloy or a magnetic layer of a magnetic thin film of an Fe _F Co _1-F alloy and a nonmagnetic conductive Layer of Cu, Cr, Cu or CuCr are alternately laminated for more than two cycles. As shown in Table 5, a magnetic resistance change factor of up to 9.5% can be obtained, that is higher than 3% from the highest conventional examples. Thus, the magnetic sensitivity can be increased. It has been found that to ensure good magnetic resistance change factors, the composition range of the magnetic thin film of the Fe _1-BC Cr _B Co _C alloy at 0.05 <B <0.5 and 0.50 <C <0.60, the composition range of the magnetic thin film of the Fe _D Al _1-D alloy at 0.75 <D <0.95, the composition range of the magnetic thin film of the Ni _E Co _1-E alloy at 0.70 <E < 0.85 and the composition range of the Fe _F Co _1-F alloy magnetic thin film is 0.65 <F <0.95.

In addition, in the present magneto-resistive element, by adjusting the thicknesses of the nonmagnetic conductive layers Cu, Cr as shown in the embodiments (1) to (24) in Table 5 by the use of the pre-magnetization alternating layers (FeMn , CuMn, NiMn, CoMn or PdMn) for controlling the magnetization of the magnetic layers in the partial layers of the artificial lattice layer which is a magneto-resistive layer, by using soft magnetic layers of FeNi and the like as the other magnetic layers and for example by the Use of a FeCrCo alloy thin film, a FeAl alloy thin film, a FeCo alloy thin film, and a FeNi alloy thin film in a composition zone with relatively small magnetostriction (<10 ^-6 ) for the magnetic layers of the artificial grid layer, the variation in the saturation magnetic field strength (the magn sensitivity) of the magnetic resistance induced by the inverse magnetostriction effect of strains generated by a high magnetostrictive constant of the magnetic layer and applied to the layer, or variations in the characteristics of mass-produced elements can be reduced, indicating a possible improvement in the reliability permeability means.

The result is a sharper response than conventional possible cases and the non-defective product factor can be improved. Moreover, by the Using an ion beam sputtering method with a hö higher film formation rate than the molecular beam Deposition in the formation of the magnetic layer and the unmag Nuclear conductive layer the cost of manufacturing the magneto-resistive layer can be reduced.

As the above-mentioned magnetic alloy thin films in present magnetic resistance body Ti, Ta and / or Ruthenium (Ru) at a maximum total concentration of 10 Atom% or less can be added, the Corrosion resistance of the thin-film magnetic head magnetic resistance layer used with magneto resistive effect and other magnetic characteristics be improved compared to conventional magnetic heads.

Here, the magneto-resistive layers in the artificial grid layer of the sixth and seventh embodiments may be laminated in the layer sequence shown in FIGS . 2, 4 (a) and (b).

A magneto-resistive element with a higher magneti resistance change factor (more than a few percent), a lower saturation magnetic field of the magnetic Wi Resistance (<100 Oe), a higher magnetic sensitivity and with excellent thermal stability (<300 ° C) can be created, as with conventional  Elements is possible.

Fig. 11 (A) is a plan view illustrative of a magnetic induction element according to an eighth embodiment of the present invention, and Fig. 11 (B) is a cross-sectional diagram illustrating the magnetic induction element. The magnetic induction element ( 90 ) consists of a triangular magnet core formed ( 91 ) and a coil ( 93 ). This means that the like magnetic induction element ( 90 ) as in Fig. 11 (B) consists of a lower magnetic core ( 91 A), a magnetic gap (g), egg ner coil ( 93 ), a lower insulating layer ( 92 ), a Obe ren magnetic core ( 91 B) and a protective layer ( 95 ), which are arranged in this order on a substrate ( 94 ). (91 A), the magnetic cores (91 B) of (91) have an approximately Laminie structure in the magnetic thin films (96 A) and non-magnetic layers (96 B) in eight layers (an even number) are laminated. In this case, the soft magnetic thin film ( 96 A) consists of an amorphous four element alloy of cobalt (Co), hafnium (Hf), tantalum (Ta) and palladium (Pd), while the non-magnetic thin film ( 96 B) of silicon (Si) , Aluminum (Al), Oxygen (O) and Nitrogen (N). The composition ratio of the soft magnetic thin film ( 96 A) for Co _(1-XYZ) Hf _X TayPd _Z is 3.0 × 4.0 atomic%, 4.5 × 5.5 atomic% and 1.3 × 2, 3 atomic%. In addition, in Fig. 12, the layer thickness of a layer in the soft magnetic thin film ( 96 A) between 150 nm (1500 Å) and 300 nm (3000 Å) and the layer thickness of a layer in the non-magnetic thin film ( 96 B) between 5 nm (50 Å) and 15 nm (150 Å).

Fig. 13 is a diagram showing the characteristics of the CoHfTaPd alloy layer of this embodiment, and Fig. 14 is a graph showing the relationship between the magnetic permeability and the write frequency in each layer constituting the magnetic cores of this embodiment are composed.

Figs. 15 (A) and (B) are drawings for illustrating the structure of their magnetic domains, and Figs. 16 (A) to (C) are perspective views for illustrating the lamination structure. Figs. 17 (A) and (B) show the relationship between the thickness of a layer and the appearance factor of the magnetic domain of each layer involved.

In the formation of the magnetic core (91) with the non-magnetic film and the soft magnetic thin film in a multilayer structure, as shown in Fig. 12, the soft magnetic thin film (96 A) by a Gleichstrommag netron sputtering method and the non-magnetic thin film (96 B ) is formed by an RF magnetron sputtering method while applying a magnetic field to both layers; then these layers ( 96 A) and ( 96 B) are laminated eight times. The conditions of formation are shown in Table 6.

Table 6

Film formation conditions

In addition, the soft magnetic thin film (96 A) during the film formation process under the conditions described above is given a uniaxial anisotropy, and it is heat treated in a rotating magnetic field according to the skiz ed in Table 7 Heat treatment conditions. In this way, the anisotropic magnetic field is lowered to control the magnetic permeability (μ).

Control conditions for the magnetic permeability vacuum degree <1 × 10 ^-4 Torr temperature 375 ° C application time 600 Oe hold time 1h rotation speed 100 revolutions per minute

The magnetic core ( 91 ) in the thin films laminated in eight layers becomes a saturation magnetic flux density of B _S = 1.2 T, a high-frequency magnetic field HC = 0.3 Oe, a magnetic permeability of μ [10 MHz] = 6000 and a magnetostriction of λ _S = -0.9 × 10 ^-6 .

The magnetic saturation flux characteristics Bs, the magnetostriction λ _S and the treatment temperature T _X , which are related to the Co, Hf + Ta, Pd amorphous four-element alloy as shown in Fig. 13, show the rectangular composition range covered by the dia gonal lines the optimum value for an amorphous monolayer alloy layer of Co _(1-XYZ) Hf _X TayPd _Z (the soft magnetic thin film ( 96 A)). Fig. 13 shows that when the magnetic saturation flux densities at B _S 1 = 1.20, B _S 2 = 1.25, B _S 3 = 1.30 [T], the characteristic values for the film are as following are: magnetostriction λ _S = 0 and treatment temperatures T _X 1 = 350, T _X 2 = 375, T _X 3 = 400 [° C]. In addition, the composition ratios are 3.0 X 4.0 at%, 4.5 Y 5.5 at% and 1.3 Z 2.3 at%.

For the eight-cycle layers of the SiAlON non-magnetic thin film and the CoHfTaPd amorphous material soft magnetic thin film, simultaneous charge sputtering in an Ar gas atmosphere is possible by rotating a holder to which a substrate is attached in this atmosphere and each target in turn sputtered. This makes it possible to halve the film formation time in comparison with the case where SiN is used for the nonmagnetic thin film ( 96 B), whereby a higher mass productivity can be realized.

Next, the relationship between the magnetic permeability and the frequency in the various layers will be explained. Fig. 14 is a characteristic diagram for comparing the characteristics A and B for each laminated layer having the characteristic C for the monolayer. In Fig. 14, the vertical axis represents the magnetic permeability (μ) and the horizontal axis represents the frequency. The characteristic A is the frequency characteristic of multilayers having eight cycles of layers of an amorphous CoHfTaPd alloy and unmagnetic SiAlON Layers are laminated. The characteristic B is a frequency characteristic of multilayers laminated with eight cycles of layers of CoHfTaPd amorphous alloy and SiN non-magnetic thin films. The characteristic C is the frequency characteristic of the layer of only one layer of CoHfTaPd amorphous alloy. The graph shows that, according to the single-layer characteristic curve C, the magnetic permeability (μ) sharply decreases, starting at about 10 MHz, as shown in FIG . In contrast, the magnetic permeability remains constant at the characteristic curves A and B of the multilayers up to 20 MHz and then decreases slowly over 20 MHz. This means that the decrease in magnetic permeability at the high frequency level can be suppressed more easily in laminated layers than in monolayers.

Next, the various magnetic domain structures will be explained when different layers are used for the magnetic core. Fig. 15 (A) illustrates the magnetic domain structure when an A layer is used for the magnetic core, and Fig. 15 (B) is a magnetic domain structure using laminated layers for the magnetic core.

When a monolayer amorphous CoHfTaPd alloy layer as shown in Fig. 15 (A) is patterned into a core shape and its magnetic domain is observed, magnetic domain walls are visible on its surface, the monolayer assuming a magnetic flux domain structure. On the other hand, in multilayers laminated with eight cycles of CoHfTaPd amorphous monolayers and non-magnetic SiN thin films, or in multilayers formed with eight cycles of CoHfTaPd amorphous monolayers and non-magnetic SiAlON thin films are laminated, as shown in Fig. 15 (B), magnetic domains are visible as a result of edge vortex effect at the core periphery. The laminated thin films have a single magnetic domain structure because, as shown in Fig. 16 (B), in a laminated thin film ( 201 ), annular paths are formed between the thin films and their magnetization is brought to reflux, the surface magnetization decreases, while in a monolayer ( 200 ) as in Fig. 16 (A) on the Oberflä surface magnetization occurs.

In addition, 16 (B) appear in the case of shown in Fig. With soft magnetic thin films (96 A) and non-magnetic thin films (96 B) in an odd number of cycles lami-defined thin film (202) magnetic domain walls shown in FIG. 16 (A) to the core surfaces. However, if the total layer thickness of the layers of the magnetic layer is constant, the number of magnetic domain walls decreases with an increase in the number of layers since the surface magnetization decreases as a result of the increase in the number of annular paths between the thin layers.

Moreover, if an even number of the two thin films ( 96A ) and ( 96B ) are laminated as shown in Fig. 16 (B), then the magnetization between the film thicknesses is raised as a whole, making magnetic domain walls difficult to appear. However, if the layer thickness of a layer of the soft magnetic layer ( 96 A) is high, then the amount of magnetization that circles on the outermost surface increases, thus facilitating the appearance of the magnetic domain walls.

Next, the relationship between the layer thickness of a layer of the layers involved and the factors behind the appearance of the magnetic domain walls will be explained. Fig. 17 (A) shows the appearance factor for the magnetic domain wall with respect to the thickness of a layer of a CoHfTaPd amorphous alloy single layer. In Fig. 17 (A), the longitudinal axis shows the factor behind the appearance of the magnetic domain walls, while the horizontal axis shows the layer thickness of a layer of the CoHfTaPd layer. The appearance factor of the magnetic domain wall is here meant to mean the probability of the appearance of a magnetic domain wall, as observed by observation of the magnetic domains using a colloid method at about 50 magnetic poles at the center of the magnetic poles formed on a wafer. For example, if the film thickness of one layer of the nonmagnetic SiAlON thin film is kept constant at 10 nm (100 Å), the films are laminated in eight layers and varies the film thickness of the amorphous CoHfTaPd alloy single layer, then the apparent factor is almost zero % at a layer thickness of up to 300 nm (3000 Å); however, the apparent factor slowly decreases at higher thicknesses because the magnetic bond between the thin films is weakened as the thickness of a film becomes higher, whereby the magnetic domain layer appears as in the case of a monolayer.

Remains the layer thickness of a layer of the monolayer of the amorphous CoHfTaPd alloy constant at 150 nm (1500 Å), The layers are laminated in eight layers, and varied the layer thickness of the monolayer of the non-magnetic SiAlON thin film below (5 nm) 50 Å, then the SiAlON thinens layer a thin island shape. This will make it impossible for that the amorphous monolayers of the CoHfTaPd alloy completely separate, which in turn creates a magnetic domain wall appears.

However, as in Fig. 17 (B), if the thickness of a layer of the nonmagnetic SiAlON thin films is larger than 5 nm (50 Å), the appearance factor of the magnetic domain wall is almost 0%. Incidentally, the longitudinal axis shows the appearance factor of the magnetic domain wall, while the horizontal axis shows the thickness of a layer of the SiAlON layers. Therefore, the thickness of the amorphous CoHfTaPd alloy monolayers is preferably between 150 nm (1500 Å) and 300 nm (3000 Å), and the thickness of a layer of the nonmagnetic SiAlON thin film is between 5 nm (50 Å) and 15 nm (150 Å) Å). This is the thickness at which the non-magnetic thin layer (96 B) separating the soft magnetic thin film (96 A).

If, as described above, the magnetic cores ( 91 A) and ( 91 B) by laminating the soft magnetic thin films ( 96 A) having a thickness of about 150 nm (1500 Å) to 300 nm (3000 Å) and the non-magnetic thin films ( 96 B) having a thickness of about 5 nm (50 Å) to 15 nm (150 Å) and the soft magnetic thin film ( 96 A) is an amorphous Vierele ment alloy of Co _(1-XYZ) Hf _X TayPd _Z with a composition ratio of 3.0 X 4.0 at%, 4.5 Y <5.5 at% and 1.3 Z is 2.3 at% and the non-magnetic thin film ( 11 B) is Si, Al, O and N. is composed, then it is possible to magnetize the magnetic cores ( 96 A) and ( 96 B) in a single stable magnetic domain, wherein the migration of the magnetic domain wall is minimized. Therefore, the decrease of the magnetic permeability (μ) can be minimized and a magnetic induction element responsive to higher speed and higher density in data processing can be realized.

In addition, since the non-magnetic thin film ( 96 B) can be formed using a sputtering method in an Ar atmosphere, continuous film formation is possible and the manufacturing cost of the magnetic induction member can be reduced.

Effects of the invention

1. As described above, the first embodiment is the Present invention characterized in that in a magneto-resistive element with a monolayer with magneto resistive effect, the front adjacent to the magnetic layer magnetization alternating layer an alloy of MnFe to 50 Atomic%, which is Cu, Ni, Pd or Co at an overall addition concentration of 25 at% or less. That's why can in the magneto-resistive element of the first type (the Type with non-artificial grid layer) the change of Output voltage, which increases the playback sensitivity, because of the magneto-resistive effect on the layer te detection current due to the increased electrical resistance stood harder in the bias change layer be shunted into the biasing alternating layer can. In the magneto-resistive element of the latter Type (the type with artificial lattice layer) is the elektri Resistance value (ρ) of the layer with magneto-resistive Overall effect reduced while the magnetic Wider level of change and the playback temp sensitivity is enhanced. One is clear for each type Improved playback in a recording with high you te noticeable, and a thin-film magnetic head can bereitge  which can easily be a high density record can play.

2. Since the second way of the present invention by the main use of a thin film of MnCo Alloy marked as a biasing alternating layer is net, a good magnetization control is the magnet layers, and the output of the playback signal can due to the high magnetic resistance change factor be increased when the layer with magneto-resistive effect is a monolayer. In addition, can also be a magne to-resistive element with high magnetic sensitivity receive. Because the layer is not made of an alloy on the Base made by FeMn, it is extremely corrosion resistant constantly. In addition, the heat resistance and others can Properties of the layer by the addition of more than one the elements Ru, Re, Ir, Pd, Fe, Ni or Cu to the thin layer of the MnCo alloy can be further improved. At the same time, the magnetic anisotropy of the magnet layers in the separate layers are controlled, and it can be seen as a result of the increased magnetic Wi derstandsungsungsfaktor a higher magnetic sensitivity obtained when the layer with magneto-resistive Effect consists of an artificial grid layer.

In addition, since the oxidation process can be omitted, The manufacturing costs can also be reduced.

3. The third embodiment of the present invention is characterized in that the artificial lattice layer consists of more than two alternating laminations of a magnetic layer made of a Fe _1-BC Cr _B Co _C magnetic thin-film magnetic layer comprising a Fe _D Al _1- magnetic layer. _D alloy, a magnetic layer of Ni _E Co _1-E alloy or a magnetic layer of Fe _F Co _1-F alloy and an unmagnetic conductive layer of Cu, Cr or CuCr, wherein the composition range for the magnetic thin film is composed of Fe _1-BC Cr _B Co _C alloy at 0.05 <B <0.15 and 0.50 <C <0.60, the composition range for the magnetic thin film layer of Fe _D Al _1-D alloy at 0.75 <D <0.95, the composition range for the Ni _E Co _1-E alloy thin magnetic layer is 0.70 <E <0.85, and the magnetic thin film composition range for the Fe _F Co _1-F alloy at 0.6 <F <0, 95 is located. These characteristics serve to improve the magnetic resistance value. Moreover, if Ti, Ta and / or Ru (ruthenium) are added to the above-mentioned alloy thin films in a total concentration of 10 atomic% or less, the corrosion resistance of these alloys can be improved.

4. The fourth embodiment of the present invention is characterized in that a magnetic induction element ment has a laminated core, in which soft magnetic thin films and nonmagnetic thin film are laminated successively, the soft magnetic Layer using an amorphous four-element alloy cobalt (Co), hafnium (Hf), tantalum (Ta) and palladium (Pd) and the non-magnetic thin film using Sili cium (Si), aluminum (Al), oxygen (O) and nitrogen (N) is formed. Therefore, one with an equal number allows soft magnetic thin films and non-magnetic thin films laminated magnetic core layers to create a stable A magnetic domain structure, wherein the migration of the magneti minimized domain wall. This is enough de magnetic permeability in high frequency bands themselves then ensured when the write-in working frequency in follow from higher speeds and higher densities in the data processing has been increased. In addition SiAlON can be used, the non-magnetic thin films using a sputtering method in an argon atmosphere be formed. This possibility of education so probably the nonmagnetic as well as the soft magnetic thin layers through a sputtering process in the same atmosphere phäre gives excellent characteristics for the mass pro production and contributes to the provision of a thin film mag  netkopfes with outstanding recording and playback characteristics.

The invention is with reference to certain embodiments described. However, it is understood that changes in The scope of the appended claims. It should too It should be noted that the term "atomic%" in the present Use the number of atoms of an element in a hundred It means atoms that stand for a substance, as well as Atomic proportion can be designated.  

Brief description of the drawings

Fig. 1
(a) is a cross section for illustrating a magneto-resistive element according to the first embodiment of the present invention,
(b) is a cross section to graphically illustrate the layer structure of a variant of the magnetoresistive element, and
(c) is a cross section to graphically illustrate the layer structure of another variant of the magneto-resistive element.

Fig. 2 is a cross-sectional diagram for illustrating a magneto-resistive element according to the second embodiment of the present invention.

Fig. 3 is a cross-sectional diagram illustrating a magneto-resistive effect layer in an artificial lattice layer in the magneto-resistive element shown in Fig. 2;

Fig. 4
(a) is a cross-sectional diagram illustrating a variant of the layer structure shown in FIG. 2, and FIG
(b) is a cross-sectional diagram for illustrating another variant of the layer structure shown in FIG. 2.

Fig. 5 is a cross-sectional view for illustrating a layer structure in the magneto-resistive element according to the third embodiment of the present invention.

Fig. 6 is a graph for illustrating the change in a magnetic field (He ₁ ) with exchanged bias against the Mn composition ratio (A) in a bias change layer of the third embodiment.

Fig. 7 is a graph showing the results of a heat resistance test conducted on the magneto-resistive element according to the third embodiment of the present invention, in which thin films of FeMn, MnCo and MnCoRu are used for the premagnetization change layer.

Fig. 8 is a cross-sectional view for illustrating a layer structure in a magnetoresistive effect layer in the magneto-resistive element according to the fifth embodiment of the present invention.

Fig. 9 is a cross section to graphically illustrate a magneto-resistive effect layer in an artificial lattice layer in the magneto-resistive element according to the sixth embodiment of the present invention.

Fig. 10 is a cross-sectional diagram for illustrating a magneto-resistive effect layer in an artificial lattice layer in the magneto-resistive effect according to the seventh embodiment of the present invention.

Fig. 11
(A) is a plan view for illustrating a magneto-resistive element according to the eighth embodiment of the present invention, and FIG
(B) is a cross section to graphically illustrate its magnetic induction element.

Fig. 12 is a cross-sectional diagram for illustrating a layer structure in the magnetic core of the magneti's induction element according to the eighth embodiment of the present invention.

Fig. 13 is a diagram for illustrating the characteristics of the CoHfTaPd alloy layer according to the eighth embodiment.

Fig. 14 is a diagram for illustrating the relationship between the magnetic permeability factor of each sub-layer in the magnetic core and the Einschreibfre frequency according to the eighth embodiment.

Fig. 15 (A) and (B) are graphical diagrams for illustrating lichung the structure of the magnetic domain of the Mag netkerns the eighth embodiment.

Fig. 16 (A) to (C) are perspective drawings for Veran illustration of the magne tables associated with the laminated structure of the magnetic core of the eighth embodiment.

Figs. 17 (A) and (B) are graphs showing the relationship between the thickness of a layer of each involved layer in the magnetic core and the appearance factor of the magnetic domain wall in the eighth embodiment.

Fig. 18
(a) is a summary cross section of the structure of a thin film magnetic head,
(b) is a plan view of its magneto-resistive element and
(c) a plan view of its magnetic induction element.

Fig. 19 (a), (b) and (c) are cross sections showing graphically the layer structure of the respective magneto-resistive ele ments.

Fig. 20 is a cross-sectional view for illustrating the layer structure when the magnetoresistive effect layer in a magneto-resistive element is an artificial lattice layer composed of non-magnetic conductive layers and magnetic layers.

Figures 21 (a) and (b) are cross-sectional views illustrating another layer structure when the magneto-resistive layer in a magneto-resistive element is an artificial lattice layer composed of nonmagnetic conductive layers and magnetic layers.

Fig. 22 is a cross-sectional diagram illustrating the layer structure when the magnetoresistive effect layer is an artificial lattice layer using bias alternating layers.

Figs. 23 (a) and (b) are cross-sectional views illustrating the magneto-resistive effect graphically when the magneto-resistive effect layer is an artificial lattice layer.

Fig. 24 is a graphic drawing for illustrating the importance of a transverse bias layer in a magneto-resistive element.

Fig. 25
(A) is a cross section of a magnetic induction element and
(B) is a graphic drawing for illustrating the structure of a magnetic domain in the core of the magnetic induction element.

LIST OF REFERENCE NUMBERS

1, 61, 71 . , , substratum
20, 21, 22, 23, 24, 25, 26 . , , Magneto-resistive element
31, 42, 62 . , , auxiliary layer
32, 43, 52, 63, 83 . , , Bias rotating shifts
27, 28, 33, 51, 65, 67 . , , Layer with magneto-resistive effect
34, 45, 73, 81 . , , Non-magnetic conductive layer
35 . , , Perpendicular magnetization film
44, 46, 64, 66, 74, 82, 85 . , , magnetic layer
90 . , , Magnetic induction element
91 . , , magnetic core
96 A. , , Soft magnetic thin film
96 B. , , Non-magnetic thin film
g. , , magnetic gap

Claims (14)

A magneto-resistive element having a magnetoresistive effect layer having a monolayer structure adjacent to a connected interconnection layer on a substrate surface.
wherein the magnetic alternating layer is an MnFe alloy layer containing Mn of 50 at.% and at least one of Cu, Ni, Pd or Co in a maximum addition concentration of 25 at.%. 2. Magneto-resistive element having a magnetoresistive effect layer having an artificial lattice layer laminated with a lamination structure for more than two cycles, comprising at least a first magnetic layer adjacent to a front-end mesh layer, a non-magnetic conductive layer Layer and a second magnetic layer on a substrate surface as a cycle,
wherein the magnetic alternating layer is an alloy layer of Mn and at least one of the additives Cu, Ni, Pd or Co at a maximum additional concentration of 25 atomic%. A magneto-resistive element having a magnetoresistive effect layer having a monolayer structure adjacent to a bias alternating layer on a substrate surface.
wherein the bias change layer comprises an antiferro magnetic or a ferrimagnetic layer mainly composed of a magnetic thin film of Mn _A Co _1-A alloy, wherein the composition range of the Mn _A Co _1-A alloy magnetic thin film is the condition is sufficient: 0.5 <A <0.9. A magneto-resistive element according to claim 3, wherein said bias alternating layer comprises the Mn _A Co _1-A alloy magnetic thin film in combination with the following alloying element (X) in a maximum ratio of 30 atomic%. an alloying element (X) which consists at least one of the elements Ru, Re, Ir, Pd, Fe, Ni or Cu. A magneto-resistive element having a magnetoresistive effect layer comprising an artificial layer laminated with a laminating structure for more than two cycles, comprising at least a first magnetic layer adjacent to a bias alternating layer, a nonmagnetic conductive layer, and a magnetic layer having second magnetic layer on a substrate surface as one cycle,
wherein the bias change layer is an antiferromagnetic layer or ferrimagnetic layer mainly comprising a MnCo alloy magnetic thin film. A magneto-resistive element having an artificial lattice layer laminated for more than two cycles with a lamination structure having at least one magnetic layer and a non-magnetic conductive layer on a substrate surface as a cycle,
wherein the magnetic layer comprises a magnetic thin film of egg ner Fe _1-BC Cr _B Co _C alloy, while the unmagneti specific conductive layer Cu, Cr or CuCr, and said to sammensetzungsbereich of the magnetic thin film of the Fe _1-BC Cr _B Co _C alloy satisfies the following conditions: 0.05 <B <0.15 and 0.50 <C <0.60. A magneto-resistive element having an artificial lattice layer laminated for more than two cycles with a lamination structure having at least one magnetic layer and a non-magnetic conductive layer on a substrate surface as a cycle,
wherein the magnetic layer comprises a magnetic layer of an FeD-Al _1-D alloy, while the nonmagnetic conductive layer comprises Cu, Cr or CuCr, and the composition range of the magnetic thin film of the Fe _D Al _1-D alloy has the following condition is enough: 0.75 <D <0.95. A magneto-resistive element having an artificial lattice layer laminated for more than two cycles with a lamination structure comprising at least one magnetic layer and a non-magnetic conductive layer on a substrate surface as one cycle,
wherein the magnetic layer comprises a magnetic layer of a Ni _E - Co _1-E alloy, while the non-magnetic conductive layer comprises Cu, Cr or CuCr, and the composition portion of the Ni _E Co _1-E magnetic thin film of the following condition is enough: 0.70 <E <0.85. A magneto-resistive element having an artificial lattice layer laminated for more than two cycles with a lamination structure comprising at least one magnetic layer and a non-magnetic conductive layer on a substrate surface as one cycle,
wherein the magnetic layer comprises a magnetic layer of Fe _F - Co _1-F alloy, while the non-magnetic conductive layer comprises Cu, Cr or CuCr, and the composition range of the magnetic thin film of the Fe _F Co _1-F alloy of the following Condition suffices: 0.65 <F <0.95. 10. magneto-resistive element according to one of claims 6 till 9,  wherein the alloy magnetic layer Ti, Ta and / or Ru in a maximum total concentration of 10 at% summarizes. 11. A magnetic induction element equipped with a magnetic core having a magnetic gap, the magnetic core having a lamination structure in which soft magnetic thin films and non-magnetic thin films are alternately laminated,
the soft magnetic thin film is made of an amorphous four-element alloy of cobalt (Co), hafnium (Hf), tantalum (Ta) and palladium (Pd);
wherein the non-magnetic thin film is made of silicon (Si), aluminum (Al), oxygen (O) and nitrogen (N). 12. A magnetic induction element according to claim 11, wherein wel chem the composition ratio of cobalt (Co), hafnium (Hf), tantalum (Ta) and palladium (Pd) in the soft magnetic thin film at Co _(1-XYZ) Hf _X TayPd _Z 3, 0 X is 4.0 atom%, 4.5 Y is 5.5 atom%, and 1.3 Z is 2.3 atom%. 13. Magnetic induction element according to claim 11 or 12, in which the layer thickness of a layer in the soft magne thin film 150 nm (1500 Å) to 300 nm (3000 Å) be carries, the layer thickness of a layer in the non-magnetic Thin film 5 nm (50 Å) to 15 nm (150 Å) and the soft magnetic thin film and the non-magnetic thin layer have an even number of layers. 14. Thin-film magnetic head, by lamination of a Magneto-resistive element according to one of claims 1 to 10 with a magnetic induction element according to one of the An Proverbs 11 to 13 is made.