DE434133C - Contact detector - Google Patents
Contact detectorInfo
- Publication number
- DE434133C DE434133C DER60215D DER0060215D DE434133C DE 434133 C DE434133 C DE 434133C DE R60215 D DER60215 D DE R60215D DE R0060215 D DER0060215 D DE R0060215D DE 434133 C DE434133 C DE 434133C
- Authority
- DE
- Germany
- Prior art keywords
- radium
- contact
- preparation
- tip
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052705 radium Inorganic materials 0.000 claims description 14
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002775 capsule Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 239000011888 foil Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 4
- 238000009434 installation Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
Kontaktdetektor. Die Gleichrichterwirkung der Detektoren isst in der Regel, da es sich um die Wirkung singulärer Punkte handelt, nicht gleichmäßig. Gemäß der Erfindung soll die Wirkung des Detektors durch Radiumbestrahlung erhöht werden. Dabei soll die Radiumbestrahlung möglichst so gerichtet sein, --daß sie an der Arbeitsstelle (Spitze) auftritt. Am sichersten wird dies erreicht, wenn die Spitze hohl ist und das Radiumpräparat sich in der Höhlung befindet, dabei kann die Höhlung ähnlich wie die Spitze konisch verlaufen. Es könnte aber auch das Radium sich in seitlichem Kanälen befinden, die neben der Spitze endigen. Soll die Spitze ganz geschlossen bleiben, so wird der hohle Teil der Spitze am vorderen Ende durch dünnes Aluminium o. dgl. abgeschlossen. Will man das Radium unabhängig von der Spitze anbringen, so kann es unterhalb in einer offenen oder ,geschlossenen Kapsel, die austauschbar sein kann, angebracht werden. Man könnte aber auch die ganze Wandung der den Detektor einschließenden Hülle oder Teile dieser Wandung mit einem Radiumpräparat überziehen.Contact detector. The rectifying effect of the detectors eats into the As a rule, since it is the effect of singular points, it is not uniform. According to According to the invention, the effect of the detector is to be increased by irradiation with radium. The radium irradiation should be directed as far as possible so that it reaches the workplace (Tip) occurs. This is most surely achieved when the tip is hollow and the radium specimen is located in the cavity, and the cavity can be similar conical like the tip. But it could also be the radium in the side Channels are located that end next to the tip. Should the tip be completely closed remain, the hollow part of the tip at the front end is made up of thin aluminum or the like. Completed. If you want to attach the radium independently of the tip, so it can be underneath in an open or closed capsule that is interchangeable can be attached. But you could also use the whole wall of the detector Cover the enclosing shell or parts of this wall with a radium preparation.
Der konstruktive Aufbau kann in verschiedener Weise durchgeführt werden. Es ist nur gegebenenfalls der Kristalleinbau bzw. der sonstige Einbau so vorzunehmen, daß die Wirkung des Radiums möglichst auf die aktive Stelle konzentriert wird.The structural design can be carried out in various ways. If necessary, the crystal installation or other installation is only to be carried out in such a way that that the effect of the radium is concentrated as much as possible on the active site.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DER60215D DE434133C (en) | 1924-01-31 | 1924-02-01 | Contact detector |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DER0060215 | 1924-01-31 | ||
DER60215D DE434133C (en) | 1924-01-31 | 1924-02-01 | Contact detector |
Publications (1)
Publication Number | Publication Date |
---|---|
DE434133C true DE434133C (en) | 1926-09-22 |
Family
ID=25992200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DER60215D Expired DE434133C (en) | 1924-01-31 | 1924-02-01 | Contact detector |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE434133C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2896137A (en) * | 1953-06-25 | 1959-07-21 | Sprague Electric Co | Radio active electrode construction |
-
1924
- 1924-02-01 DE DER60215D patent/DE434133C/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2896137A (en) * | 1953-06-25 | 1959-07-21 | Sprague Electric Co | Radio active electrode construction |
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