DE4337694A1 - Solar module with improved use of light - Google Patents
Solar module with improved use of lightInfo
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- DE4337694A1 DE4337694A1 DE4337694A DE4337694A DE4337694A1 DE 4337694 A1 DE4337694 A1 DE 4337694A1 DE 4337694 A DE4337694 A DE 4337694A DE 4337694 A DE4337694 A DE 4337694A DE 4337694 A1 DE4337694 A1 DE 4337694A1
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- solar module
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- reflector layer
- module according
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Links
- 239000012463 white pigment Substances 0.000 claims abstract description 10
- 239000000049 pigment Substances 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000004831 Hot glue Substances 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 239000004922 lacquer Substances 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 239000002966 varnish Substances 0.000 claims description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims 2
- 230000013011 mating Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 5
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- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 240000008881 Oenanthe javanica Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10761—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing vinyl acetal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Solarzellen aus amorphem Silizium weisen wegen ihrer hohen De fektdichte des Materials gegenüber anderen kristallinen Halblei termaterialien höhere Verluste bei der Ladungsträgersammlung auf. Ein weiterer Nachteil ist die Photoinstabilität (Staebler-Wrons ki-Effekt), die bereits nach kurzer Zeit zu Leistungsverlusten der Solarzellen führt. Die Auswirkungen beider Effekte werden in Solarzellen mit Siliziumschichtdicken bis ca. 300 nm verringert. Werden bei solchen Zellen für den Front- und Rückkontakt trans parente, leitfähige Oxide benutzt, erhält man wegen der nicht vollständigen Lichtabsorption in der Siliziumschicht eine semit ransparente Solarzelle.Amorphous silicon solar cells have a high de perfect density of the material compared to other crystalline semiconductors higher losses in load carrier collection. Another disadvantage is the photo instability (Staebler-Wrons ki effect), which leads to a loss of performance after a short time of the solar cells. The effects of both effects are shown in Solar cells with silicon layer thicknesses reduced to approx. 300 nm. Are such cells for the front and back contact trans Parent, conductive oxides are not used because of the complete light absorption in the silicon layer a semit transparent solar cell.
In der Fig. 1 ist eine typische Transmissionskurve für einen Zellenaufbau Glas/Zinkoxid/a-Si:H/Zinkoxid dargestellt. Daraus ist zu entnehmen, daß in der Zelle das blaue Licht (Wellenlänge kleiner 500 nm) beim ersten Durchgang durch den Zellenaufbau vollständig absorbiert wird, das rote Licht (Wellenlänge größer 500 nm) dagegen nur zum Teil. Bei einer Wellenlänge von 700 nm liegt die Transmission T zum Beispiel bei ca. 40 Prozent. In der gleichen Figur ist auch eine typische Kurve für die Quantenaus beute Q (Q = Anteil der in Ladungsträgerpaare umgesetzten Photo nen) einer Einfachsolarzelle aus amorphem Silizium dargestellt. Der Überlapp der beiden Kurven T und Q im Bereich zwischen 500 und 800 nm zeigt den Anteil des Lichtes, der theoretisch noch von der Zelle ausgenutzt werden könnte.In Fig. 1 is a typical transmission curve for a cell structure of Glass / zinc oxide / a-Si: H shown / zinc oxide. It can be seen from this that the blue light (wavelength less than 500 nm) is completely absorbed in the cell during the first pass through the cell structure, whereas the red light (wavelength greater than 500 nm) is only partially absorbed. At a wavelength of 700 nm, the transmission T is, for example, approximately 40 percent. The same figure also shows a typical curve for the quantum yield Q (Q = proportion of the photons converted into charge carrier pairs) of a single solar cell made of amorphous silicon. The overlap of the two curves T and Q in the range between 500 and 800 nm shows the proportion of light that could theoretically still be used by the cell.
Zur vollständigen Nutzung der im Empfindlichkeitsbereich der So larzellen liegenden Lichtanteile des Sonnenspektrums werden me tallische Reflektoren eingesetzt. Möglich ist es beispielsweise, die Rückelektrode aus einem hochreflektierenden Metall wie bei spielsweise Silber auszuführen, oder eine solche hochreflektie rende Metallschicht mit einer üblichen Elektrode zu kombinieren.For full use of the So Lar cells of light in the solar spectrum are me metallic reflectors used. For example, it is possible the back electrode made of a highly reflective metal as in play silver, for example, or such a high reflection metal layer with a common electrode.
Der vorliegenden Erfindung liegt das Problem zugrunde, auch für semitransparente Dünnschichtsolarzellen und Dünnschichtsolarmodu le eine Möglichkeit anzugeben, nicht absorbiertes Licht besser auszunützen und dadurch Solarzellen und Solarmodule mit verbes serter Leistung zu schaffen.The present invention addresses the problem, also for semi-transparent thin-film solar cells and thin-film solar modules le a way to indicate better light not absorbed exploit and thereby solar cells and solar modules with verbes performance.
Die Erfindung löst dieses Problem mit einem Solarmodul, welches die Merkmale von Anspruch 1 aufweist.The invention solves this problem with a solar module, which having the features of claim 1.
Weitere Ausgestaltungen der Erfindung sind den Unteransprüchen zu entnehmen.Further embodiments of the invention are set out in the subclaims remove.
Weiße Pigmente zeigen ein hohes Reflexionsvermögen für Licht, welches insbesondere im fraglichen Bereich zwischen 500 und 800 nm bis 100 Prozent betragen kann. Das Licht wird dabei vollstän dig in die aktive Schicht reflektiert und kann dort absorbiert werden. Ein erfindungsgemäßes Solarmodul mit Reflektorschicht zeigt daher gegenüber einem semitransparenten Solarmodul ohne Re flektorschicht einen um bis zu 10 Prozent erhöhten Kurzschluß strom und je nach Moduldesign (Zellbreite) eine um bis zu 10 Pro zent verbesserte Leistung.White pigments show a high reflectivity for light, which is particularly in the range between 500 and 800 nm in question can be up to 100 percent. The light becomes complete dig reflected in the active layer and can be absorbed there become. An inventive solar module with a reflector layer therefore shows compared to a semi-transparent solar module without Re a short circuit increased by up to 10 percent current and depending on the module design (cell width) by up to 10 Pro performance improved.
Die Reflektorschicht kann mit beliebigen semitransparenten So larmodulen kombiniert werden. Es ist dabei nicht erforderlich, den optimierten Aufbau bekannter Solarzellen zu verbessern, da die Reflektorschicht elektrisch nicht aktiv ist, bzw. mit elek trisch aktiven Bereichen des Solarzellenaufbaus nicht in Wechsel wirkung treten kann. Daher ist es möglich, ein semitransparentes Solarmodul wechselweise mit und ohne Reflektorschicht zu betrei ben, je nachdem ob Semitransparenz (zum Beispiel bei einer Ver wendung als Fenster im weitesten Sinn) oder optimale Leistung bei gleichzeitiger Lichtundurchlässigkeit gewünscht ist.The reflector layer can with any semi-transparent So alarm modules can be combined. It is not necessary to improve the optimized structure of known solar cells because the reflector layer is not electrically active, or with elec tric active areas of the solar cell structure not alternating effect can occur. Therefore, it is possible to have a semi-transparent To operate solar module alternately with and without reflector layer depending on whether semitransparency (for example with a ver as a window in the broadest sense) or optimal performance simultaneous opacity is desired.
Die Auswahl eines geeigneten weißen Pigments richtet sich nach den Reflexionseigenschaften des Pigments und nach der Verarbeit barkeit zu einer Reflektorschicht. Geeignete Pigmente können Mi neralien sein und sind beispielsweise ausgewählt aus Bariumsul fat, Titanoxid und Zinksulfid. Zur Optimierung der Eigenschaften können auch unterschiedliche weiße Pigmente gemischt werden. Eine Pigmentmischung mit sehr guten Reflexionseigenschaften ist beispielsweise Lithopone®, welches eine Mischung aus Bariumsul fat und Zinksulfid ist. Die Reinsubstanz zeigt im Wellenlängen bereich von 400 nm bis 700 nm einen Reflexionsgrad von 98 Pro zent.The selection of a suitable white pigment depends on the reflective properties of the pigment and after processing availability to a reflector layer. Suitable pigments can Mi minerals and are, for example, selected from barium sul fat, titanium oxide and zinc sulfide. To optimize the properties different white pigments can also be mixed. A Pigment mixture with very good reflection properties for example Lithopone®, which is a mixture of barium sul is fat and zinc sulfide. The pure substance shows in the wavelengths range from 400 nm to 700 nm a reflectance of 98 Pro cent.
Noch besser geeignet ist Titanoxid TiO₂, insbesondere in seiner rutilen Modifikation, wegen seiner hohen UV-Stabilität und der im Wellenlängenbereich 500 nm bis 1000 nm durchgängig hohen Re flexion (< 90 Prozent).Titanium oxide TiO₂ is even more suitable, especially in its rutile modification, because of its high UV stability and the im Wavelength range 500 nm to 1000 nm consistently high Re flexion (<90 percent).
Wegen der besseren Verarbeitbarkeit besteht die Reflektorschicht üblicherweise neben dem weißen Pigment auch aus einem Binder. Möglich ist es beispielsweise, Pigmentpartikel in eine sinterfä hige Paste einzuarbeiten und diese Paste auf einer Glasscheibe aufzubringen und einzusintern. Eine solche Scheibe mit allerdings dünnerer Reflektorschicht findet bereits als Diffusorscheibe bei Leuchtkörpern Verwendung. In vorteilhafter Weise kann daher eine solche Scheibe mit höherer Reflexion anstelle der bekannten Fensterglasscheibe für die Rückseitenabdeckung eines se mitransparenten Solarmoduls verwendet werden.Because of the better processability, there is a reflector layer usually also from a binder in addition to the white pigment. For example, pigment particles can be sintered and paste this paste onto a glass plate apply and sinter. Such a disc, however thinner reflector layer is already used as a diffuser disc Luminous bodies use. Therefore, a such a disk with higher reflection instead of the known one Window glass pane for the rear cover of a se can be used with transparent solar modules.
Da die Reflektorschicht üblicherweise im Inneren des Solarmoduls, das heißt unter der Rückseitenabdeckung angebracht wird, können auch weniger abriebfeste Reflektorschichten verwendet werden. Möglich ist es daher, die weißen Pigmente als Dispersion einzusetzen und beispielsweise als Anstrich auf der Innenseite der Rückseitenabdeckung der Solarzelle bzw. des Solarmoduls auf zubringen. Geeignete Dispersionen sind daher an die Zusammenset zung von weißen Anstrichfarben angelehnt.Since the reflector layer is usually inside the solar module, that is, can be attached under the back cover less abrasion-resistant reflector layers can also be used. It is therefore possible to use the white pigments as a dispersion use and for example as a coat of paint on the inside the back cover of the solar cell or the solar module bring to. Suitable dispersions are therefore available in the composition based on white paints.
Geeignete organische Binder für die Dispersion sind Po lyacryl/Polyurethan-Mischungen oder Epoxy-Lacke. Letztere zeigen im Klimatest vor allem bezüglich der Haftung sehr gute Eigen schaften. Ein hohes Reflexionsvermögen und hervorragende Schichtstabilität wird durch eine Reflektorschicht erzielt, die als Dispersion auf der Basis eines Epoxy-Lackes mit bis zu 60 Gewichtsprozent Pigmentanteil aufgebaut ist.Suitable organic binders for the dispersion are Po lyacrylic / polyurethane mixtures or epoxy lacquers. The latter show very good in the climate test, especially with regard to liability create. High reflectivity and excellent Layer stability is achieved by a reflector layer that as a dispersion based on an epoxy paint with up to 60 Weight percent pigment content is built up.
Eine weitere Möglichkeit besteht darin, als Reflektorschicht eine Pigmente enthaltende Kunststoffolie zu verwenden. Diese kann unter der Rückseitenabdeckung angeordnet sein, oder tiefer in den Solarzellenaufbau integriert sein, beispielsweise zwischen Rück elektrode und thermoplastischer Schmelzklebefolie. Möglich ist es auch, in die letztgenannte Folie weiße Pigmente zu integrieren, wobei diese bereits in einem bekannten Aufbau vorhandene Folie mit Pigmenten versehen nun zusätzlich als Reflektorschicht dient.Another possibility is to use a reflector layer To use plastic film containing pigments. This can be placed under the back cover, or deeper into the Solar cell structure can be integrated, for example between the back electrode and thermoplastic hot melt adhesive film. It is possible also to integrate white pigments into the latter film, this already existing film in a known structure provided with pigments now also serves as a reflector layer.
Im folgenden wird die Erfindung anhand von Ausführungsbeispielen und der zugehörigen zwei Figuren näher erläutert. Die Fig. 2 und 3 zeigen erfindungsgemäße Solarmodule im schematischen Quer schnitt.The invention is explained in more detail below on the basis of exemplary embodiments and the associated two figures. Figs. 2 and 3 show solar modules according to the invention in schematic cross section.
Fig. 2: Erfindungsgemäße Solarmodule sind auf einem transparen ten Substrat 1 aufgebaut, beispielsweise auf 4 mm dickem Fenster glas. Direkt darüber befindet sich die transparente Frontelektro de 2, die aus einem dünnen leitfähigen Oxid bestehen kann und beispielsweise aus Zinkoxid ist, welches zusätzlich noch mit Aluminium oder Bor dotiert sein kann. Darüber ist die (photovoltaisch) aktive Schicht 3 angeordnet, welche aus einem beliebigen Dünnschichthalbleitermaterial bestehen kann, übli cherweise aus amorphem Silizium oder einer amorphes Silizium enthaltenden Legierung. Die aktive Schicht 3 ist weiter in zu mindest zwei Bereiche von unterschiedlicher Dotierung aufgeteilt und weist zumindest einen Halbleiterübergang auf. Für amorphes Silizium als aktive Schicht 3 ist beispielsweise ein pin-Aufbau bevorzugt. Die Dicke der aktiven Schicht ist dünner gewählt, als zur vollständigen Absorption einfallenden Lichtes im Empfind lichkeitsbereich der aktiven Schicht erforderlich ist. Bei einer Einfachsolarzelle (mit nur einem pn-Übergang) aus amorphem Sili zium beträgt die Schichtdicke der aktiven Schicht 3 maximal 300 nm, um den genannten Staebler-Wronski-Effekt zu minimieren, das heißt einen möglichst hohen, stabilen Endwirkungsgrad zu erhal ten. Über der aktiven Schicht 3 ist die Rückelektrode 4 angeord net, welche wie die Frontelektrode 2 transparent ausgebildet ist und zum Beispiel aus einer 2 µm dicken ZnO-Schicht besteht. Fig. 2: Solar modules according to the invention are built on a transparent substrate 1 , for example on 4 mm thick window glass. Directly above is the transparent front electrode de 2 , which can consist of a thin conductive oxide and is made of zinc oxide, for example, which is additionally can be doped with aluminum or boron. Above it is arranged the (photovoltaically) active layer 3 , which can consist of any thin-film semiconductor material, usually made of amorphous silicon or an alloy containing amorphous silicon. The active layer 3 is further divided into at least two areas with different doping and has at least one semiconductor junction. For example, a pin structure is preferred for amorphous silicon as active layer 3 . The thickness of the active layer is chosen to be thinner than is required for complete absorption of incident light in the sensitivity range of the active layer. In the case of a single solar cell (with only one pn junction) made of amorphous silicon, the layer thickness of the active layer 3 is a maximum of 300 nm in order to minimize the Staebler-Wronski effect mentioned, that is to say to obtain the highest possible stable end efficiency the active layer 3 , the back electrode 4 is angeord net, which is transparent like the front electrode 2 and consists for example of a 2 micron thick ZnO layer.
Über dem bis dahin bekannten Solarzellenaufbau wird nun erfin dungsgemäß die Reflektorschicht 5 angeordnet. Im vorliegenden Beispiel kann dies eine über der Rückelektrode 4 aufgebrachte Lackschicht sein, in der ein weißes Pigment eindispergiert ist. Möglich ist es auch, für diesen Aufbau eine Schmelzklebefolie zu verwenden, welche ein weißes Pigment enthält, beispielsweise eine mit Titanoxid gefüllte Tedlar® Folie.Over the previously known solar cell structure, the reflector layer 5 is now inven tion according to the invention. In the present example, this can be a lacquer layer applied over the back electrode 4 , in which a white pigment is dispersed. It is also possible to use a hot-melt adhesive film that contains a white pigment for this structure, for example a Tedlar® film filled with titanium oxide.
Vervollständigt wird der Aufbau durch eine Rückseitenabdeckung 7, welche ebenfalls eine Glasplatte sein kann. Sie wird mit Hilfe einer dazwischenliegenden Schmelzklebefolie 6 mit dem bisherigen Aufbau verbunden. Durch Aufschmelzen der Schmelzklebefolie 6, welche beispielsweise aus Polyvinylbutyral besteht, wird ein me chanisch fester und klimastabiler Verbund erzeugt.The structure is completed by a rear cover 7 , which can also be a glass plate. It is connected to the previous structure with the aid of an intermediate hot-melt adhesive film 6 . By melting the hot-melt adhesive film 6 , which consists for example of polyvinyl butyral, a mechanically strong and climate-stable composite is produced.
Fig. 3: Das hier dargestellte Solarmodul weist vom Glassubstrat bis zur Rückelektrode den gleichen Aufbau auf, wie er bereits im ersten Ausführungsbeispiel beschrieben wurde. Im Unterschied zu letzterem ist im vorliegenden Aufbau jedoch die Reihenfolge der Reflektorschicht 5 und der Schmelzklebefolie 6 vertauscht. Bei dieser Anordnung besteht die Möglichkeit, die Reflektorschicht 5 direkt mit der Rückseitenabdeckung 7 zu verbinden, beispielsweise durch Aufsintern einer weiße Pigmente enthaltenden Druckpaste auf die Rückseitenabdeckung 7, welche beispielsweise eine Glasscheibe ist. Die mit der Reflektorschicht 5 versehene Rückseitenabdeckung 7 kann dann in bekannter Weise mit dem darunterliegenden Verbund mit Hilfe einer Schmelzklebefolie 6 laminiert werden. Anstelle des Aufsinterns der Reflektorschicht 5 auf die Rückseitenab deckung 7 ist es auch möglich, einen ein weißes Pigment enthal tenden Lack auf der Rückseitenabdeckung 7 aufzubringen und wie beschrieben mit dem übrigen Verbund zu laminieren. Möglich ist es auch, als Reflektorschicht 5 eine ein weißes Pigment enthaltende Schmelzklebefolie zu verwenden, welche den Laminierprozeß zusätz lich unterstützen kann. Fig. 3: The solar module shown here has the same structure from the glass substrate to the back electrode as was already described in the first embodiment. In contrast to the latter, the order of the reflector layer 5 and the hot-melt adhesive film 6 is reversed in the present structure. With this arrangement, there is the possibility of connecting the reflector layer 5 directly to the rear cover 7 , for example by sintering a printing paste containing white pigments onto the rear cover 7 , which is, for example, a glass pane. The rear cover 7 provided with the reflector layer 5 can then be laminated in a known manner with the underlying composite with the aid of a hot-melt adhesive film 6 . Instead of sintering the reflector layer 5 onto the rear cover 7 , it is also possible to apply a varnish containing a white pigment to the rear cover 7 and to laminate it as described with the rest of the composite. It is also possible to use a hot-melt adhesive film containing a white pigment as reflector layer 5 , which can additionally support the lamination process.
Die Ausführungsformen, in denen die Reflektorschicht 5 in einem ersten Schritt auf der Rückseitenabdeckung aufgebracht wird, hat den Vorteil, daß die so beschichtete Rückseitenabdeckung in be kannter Weise in einem gebräuchlichen Laminierverfahren zur Her stellung einer Solarzelle bzw. des Solarmoduls eingesetzt werden kann. So können mit ein und demselben bis auf die Rückseitenab deckung 7 kompletten Aufbau durch die Wahl einer transparenten oder mit einer Reflektorschicht 5 versehenen Rückseitenabdeckung sowohl semitransparente als auch optisch undurchlässige Solarmo dule erzeugt werden.The embodiments in which the reflector layer 5 is applied in a first step to the back cover has the advantage that the back cover thus coated can be used in a known manner in a conventional lamination process for the manufacture of a solar cell or the solar module. So with one and the same except for the Rückseitenab cover 7 complete structure by choosing a transparent or provided with a reflector layer 5 back cover both semitransparent and optically opaque solar modules can be generated.
In einer weiteren Ausgestaltung der Erfindung ist es möglich, die direkt mit der Schmelzklebefolie 6 in Kontakt stehende Seite der Reflektorschicht 5 zu strukturieren bzw. oberflächlich aufzurau hen. Damit wird ein verbessertes Reflexionsverhalten der Reflek torschicht erzielt. Diese Ausführungsform eignet sich insbeson dere für die Anordnungen, bei denen eine Lackschicht auf dem So larzellenaufbau oder auf der Rückseitenabdeckung 7 aufgebracht ist, oder bei der auf der Rückseitenabdeckung 7 eine Reflektor schicht 5 aufgesintert ist.In a further embodiment of the invention, it is possible to structure or roughen the surface of the reflector layer 5 that is in direct contact with the hot-melt adhesive film 6 . This results in an improved reflection behavior of the reflector gate layer. This embodiment is particularly suitable for the arrangements in which a lacquer layer is applied to the solar cell structure or on the rear cover 7 , or in which a reflector layer 5 is sintered onto the rear cover 7 .
Für ein komplettes Solarmodul ist der in den Figuren dargestellte Aufbau natürlich in bekannter Weise z. B. streifenförmig struktu riert, wobei Front- und Rückelektroden der streifenförmigen Ein zelsolarzellen so miteinander verbunden sind, daß sich eine Seri enverschaltung der Einzelsolarzellen ergibt. Wegen der besseren Übersichtlichkeit ist diese Modulstruktur in den Figuren nicht dargestellt.For a complete solar module, the one shown in the figures is Structure, of course, in a known manner. B. stripe-like structure riert, with front and back electrodes of the strip-shaped Ein cell solar cells are connected to each other so that a Seri interconnection of the individual solar cells results. Because of the better This module structure is not clear in the figures shown.
Claims (9)
Glassubstrat (1)/Zinkoxidfrontelektrode (2)/photovoltaisch aktive Schicht (3) aus amorphem Silizium oder einer, amorphes Silizium enthaltenden Legierung/Zinkoxid-Rückelektrode (4)/thermoplastische Schmelzkleberfolie (6) und eine Glasscheibe als Rückseitenabdeckung (7), bei der auf der Innenseite als Re flektorschicht (5) ein ein weißes Pigment enthaltender Lack auf gebracht ist.9. Solar module according to one of the preceding claims, which has a layer structure comprising the following layers:
Glass substrate ( 1 ) / zinc oxide front electrode ( 2 ) / photovoltaically active layer ( 3 ) made of amorphous silicon or an alloy containing amorphous silicon / zinc oxide back electrode ( 4 ) / thermoplastic hot-melt adhesive film ( 6 ) and a glass pane as a back cover ( 7 ), in which on the inside as a reflector layer ( 5 ), a varnish containing a white pigment is applied.
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DE4337694A DE4337694A1 (en) | 1993-11-04 | 1993-11-04 | Solar module with improved use of light |
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DE4337694A DE4337694A1 (en) | 1993-11-04 | 1993-11-04 | Solar module with improved use of light |
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DE19838439C1 (en) * | 1998-08-24 | 2000-04-27 | Fraunhofer Ges Forschung | Vertically integrated thin film photodiode, for photodetector used e.g. in optical data storage and transmission, is produced by thinning and reflective coating of a photodiode substrate bonded to a temporary substrate |
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RU2489773C2 (en) * | 2007-12-07 | 2013-08-10 | Курарай Юроп Гмбх | Photovoltaic modules having reflecting adhesive films |
WO2009071703A2 (en) * | 2007-12-07 | 2009-06-11 | Kuraray Europe Gmbh | Photovoltaic modules having reflective adhesive films |
EP2340566A2 (en) * | 2008-09-09 | 2011-07-06 | Lg Electronics Inc. | Thin-film type solar cell module having a reflective media layer and fabrication method thereof |
EP2340566A4 (en) * | 2008-09-09 | 2013-06-19 | Lg Electronics Inc | Thin-film type solar cell module having a reflective media layer and fabrication method thereof |
WO2010040775A2 (en) * | 2008-10-07 | 2010-04-15 | Oerlikon Solar Ip Ag, Trübbach | Photovoltaic module |
WO2010040775A3 (en) * | 2008-10-07 | 2010-06-24 | Oerlikon Solar Ip Ag, Trübbach | Photovoltaic module |
WO2010046180A3 (en) * | 2008-10-22 | 2011-09-15 | Applied Materials Inc. - A Corporation Of The State Of Delaware | Semiconductor device and method of producing a semiconductor device |
WO2010046180A2 (en) * | 2008-10-22 | 2010-04-29 | Applied Materials Inc. - A Corporation Of The State Of Delaware | Semiconductor device and method of producing a semiconductor device |
EP2180527A1 (en) | 2008-10-22 | 2010-04-28 | Applied Materials, Inc. | Semiconductor device and method of producing a semiconductor device |
DE102009021051A1 (en) * | 2009-05-07 | 2010-11-11 | Inventux Technologies Ag | Solar cell, has layer system arranged between transparent substrate i.e. glass substrate, and cover, and reflector layer arranged between laminate layer and cover or integrated with laminate layer or cover |
WO2010127844A3 (en) * | 2009-05-07 | 2011-12-29 | Inventux Technologies Ag | Solar cell and method for the production thereof |
DE102009024050A1 (en) | 2009-06-05 | 2010-12-09 | Schott Solar Ag | Thin section solar cell has transparent substrate, transparent front electrode, photovoltaic active layer system, transparent back electrode and electrically non-conductive reflector |
DE102009042093A1 (en) * | 2009-09-18 | 2011-03-24 | Inventux Technologies Ag | Photovoltaic module i.e. thin-layer photovoltaic module, has regions connected in parallel and comprising absorber layer, where absorber layer is arranged between front contact layer and rear contact layer |
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