DE4190411T1 - - Google Patents
Info
- Publication number
- DE4190411T1 DE4190411T1 DE19914190411 DE4190411T DE4190411T1 DE 4190411 T1 DE4190411 T1 DE 4190411T1 DE 19914190411 DE19914190411 DE 19914190411 DE 4190411 T DE4190411 T DE 4190411T DE 4190411 T1 DE4190411 T1 DE 4190411T1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2051326A JPH03252386A (ja) | 1990-03-02 | 1990-03-02 | 単結晶製造装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4190411T1 true DE4190411T1 (pt) | 1992-05-14 |
Family
ID=12883798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19914190411 Withdrawn DE4190411T1 (pt) | 1990-03-02 | 1991-03-01 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH03252386A (pt) |
| KR (1) | KR920701531A (pt) |
| DE (1) | DE4190411T1 (pt) |
| WO (1) | WO1991013192A1 (pt) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2754104B2 (ja) * | 1991-10-15 | 1998-05-20 | 信越半導体株式会社 | 半導体単結晶引上用粒状原料供給装置 |
| US5997234A (en) * | 1997-04-29 | 1999-12-07 | Ebara Solar, Inc. | Silicon feed system |
| JP5145014B2 (ja) * | 2007-03-29 | 2013-02-13 | シャープ株式会社 | 固体材料処理装置 |
| US10202704B2 (en) | 2011-04-20 | 2019-02-12 | Gtat Ip Holding Llc | Side feed system for Czochralski growth of silicon ingots |
| EP2699716B1 (en) * | 2011-04-20 | 2019-12-18 | GTAT IP Holding LLC | Side feed system for czochralski growth of silicon ingots |
| CN104264229B (zh) * | 2014-10-09 | 2016-08-24 | 河北晶龙阳光设备有限公司 | 一种单晶炉在线掺杂装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0523580Y2 (pt) * | 1987-02-27 | 1993-06-16 | ||
| JPH01282194A (ja) * | 1988-01-19 | 1989-11-14 | Osaka Titanium Co Ltd | 単結晶製造方法 |
-
1990
- 1990-03-02 JP JP2051326A patent/JPH03252386A/ja active Pending
-
1991
- 1991-03-01 KR KR1019910701501A patent/KR920701531A/ko not_active Application Discontinuation
- 1991-03-01 WO PCT/JP1991/000273 patent/WO1991013192A1/ja active Application Filing
- 1991-03-01 DE DE19914190411 patent/DE4190411T1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| WO1991013192A1 (en) | 1991-09-05 |
| JPH03252386A (ja) | 1991-11-11 |
| KR920701531A (ko) | 1992-08-12 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8128 | New person/name/address of the agent |
Representative=s name: KLOEPSCH, G., DIPL.-ING. DR.-ING., PAT.-ANW., 5000 |
|
| 8139 | Disposal/non-payment of the annual fee |