|
US5329480A
(en)
*
|
1990-11-15 |
1994-07-12 |
California Institute Of Technology |
Nonvolatile random access memory
|
|
US5289410A
(en)
*
|
1992-06-29 |
1994-02-22 |
California Institute Of Technology |
Non-volatile magnetic random access memory
|
|
US5295097A
(en)
*
|
1992-08-05 |
1994-03-15 |
Lienau Richard M |
Nonvolatile random access memory
|
|
US5543988A
(en)
*
|
1993-04-30 |
1996-08-06 |
International Business Machines Corporation |
Hall sensor with high spatial resolution in two directions concurrently
|
|
US5396455A
(en)
*
|
1993-04-30 |
1995-03-07 |
International Business Machines Corporation |
Magnetic non-volatile random access memory
|
|
US6064083A
(en)
|
1995-04-21 |
2000-05-16 |
Johnson; Mark B. |
Hybrid hall effect memory device and method of operation
|
|
US6741494B2
(en)
*
|
1995-04-21 |
2004-05-25 |
Mark B. Johnson |
Magnetoelectronic memory element with inductively coupled write wires
|
|
US6169687B1
(en)
|
1995-04-21 |
2001-01-02 |
Mark B. Johnson |
High density and speed magneto-electronic memory for use in computing system
|
|
US7050329B2
(en)
*
|
1995-04-21 |
2006-05-23 |
Johnson Mark B |
Magnetic spin based memory with inductive write lines
|
|
US6140838A
(en)
|
1995-04-21 |
2000-10-31 |
Johnson; Mark B. |
High density and high speed magneto-electronic logic family
|
|
US6195228B1
(en)
*
|
1997-01-06 |
2001-02-27 |
Nec Research Institute, Inc. |
Thin, horizontal-plane hall sensors for read-heads in magnetic recording
|
|
US5926414A
(en)
*
|
1997-04-04 |
1999-07-20 |
Magnetic Semiconductors |
High-efficiency miniature magnetic integrated circuit structures
|
|
US6051441A
(en)
*
|
1998-05-12 |
2000-04-18 |
Plumeria Investments, Inc. |
High-efficiency miniature magnetic integrated circuit structures
|
|
US6175515B1
(en)
|
1998-12-31 |
2001-01-16 |
Honeywell International Inc. |
Vertically integrated magnetic memory
|
|
US6288929B1
(en)
|
1999-03-04 |
2001-09-11 |
Pageant Technologies, Inc. |
Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory
|
|
US6330183B1
(en)
|
1999-03-04 |
2001-12-11 |
Pageant Technologies, Inc. (Micromem Technologies, Inc.) |
Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory
|
|
US6317354B1
(en)
|
1999-03-04 |
2001-11-13 |
Pageant Technologies, Inc. |
Non-volatile random access ferromagnetic memory with single collector sensor
|
|
US6266267B1
(en)
|
1999-03-04 |
2001-07-24 |
Pageant Technologies, Inc. |
Single conductor inductive sensor for a non-volatile random access ferromagnetic memory
|
|
US6229729B1
(en)
|
1999-03-04 |
2001-05-08 |
Pageant Technologies, Inc. (Micromem Technologies, Inc.) |
Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory
|
|
US6307774B1
(en)
|
2000-03-22 |
2001-10-23 |
Mark B. Johnson |
Magnetoelectronic memory array
|
|
US6657888B1
(en)
|
2001-05-11 |
2003-12-02 |
Board Of Regents Of The University Of Nebraska |
Application of high spin polarization materials in two terminal non-volatile bistable memory devices
|
|
EP1310962A1
(de)
*
|
2001-11-08 |
2003-05-14 |
Hitachi Ltd. |
Magnetische Speicherzelle
|
|
US7173847B2
(en)
*
|
2003-05-20 |
2007-02-06 |
Magsil Corporation |
Magnetic storage cell
|
|
FR2898414B1
(fr)
*
|
2006-03-07 |
2008-06-06 |
Commissariat Energie Atomique |
Composant sensible a un champ magnetique comportant un semi-conducteur magnetique dilue, dispositifs l'incorporant et procede de mise en oeuvre.
|
|
KR100862183B1
(ko)
*
|
2007-06-29 |
2008-10-09 |
고려대학교 산학협력단 |
강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기기억 소자
|
|
US8929153B1
(en)
*
|
2013-08-23 |
2015-01-06 |
Qualcomm Incorporated |
Memory with multiple word line design
|
|
CN114689090B
(zh)
*
|
2022-03-28 |
2024-04-09 |
杭州电子科技大学 |
一种霍尔条阵列输出偏置的自适应补偿方法及电路
|