DE4106771A1 - Flat glass coating - has gap between target and cathode in vapour deposition appts. to prevent pimple formation on the deposited layer - Google Patents

Flat glass coating - has gap between target and cathode in vapour deposition appts. to prevent pimple formation on the deposited layer

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Publication number
DE4106771A1
DE4106771A1 DE19914106771 DE4106771A DE4106771A1 DE 4106771 A1 DE4106771 A1 DE 4106771A1 DE 19914106771 DE19914106771 DE 19914106771 DE 4106771 A DE4106771 A DE 4106771A DE 4106771 A1 DE4106771 A1 DE 4106771A1
Authority
DE
Germany
Prior art keywords
target
cathode
coating
appts
flat glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19914106771
Other languages
German (de)
Inventor
Michael Dr Schanz
Rudolf Dr Latz
Michael Dr Scherer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers und Leybold Deutschland Holding AG
Original Assignee
Leybold AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold AG filed Critical Leybold AG
Priority to DE19914106771 priority Critical patent/DE4106771A1/en
Priority to CH311291A priority patent/CH684000A5/en
Priority to BE9200035A priority patent/BE1006649A3/en
Priority to FI920457A priority patent/FI920457A/en
Priority to JP4461292A priority patent/JPH0565632A/en
Publication of DE4106771A1 publication Critical patent/DE4106771A1/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3421—Cathode assembly for sputtering apparatus, e.g. Target using heated targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The appts. to form a coating on flat glass in a vacuum deposition process, especially to apply a layer of indium-tin-oxide has a gap (a) between the target (3) and the cathode (5). Tie rods or holding pins (30,30') act as holders for the target (3) as a bond to the cathode body, such as the magnet yoke (6) or the U-shaped component (4). ADVANTAGE - The appts. prevents the formation of pimples on the deposited layer on the substrate during sputtering and avoids arcing. The long-term stability of the process is increased, esp. for in-line assemblies, with increased productivity as time is not lost for mechanical target cleaning.

Description

Die Erfindung betrifft eine Vorrichtung zum Beschichten eines Substrats, vorzugsweise zum Beschichten von Flach­ glas, mit einer Indium-Zinn-Oxid-Schicht, bestehend aus einer Stromquelle, die mit einer in einer evakuierbaren Beschichtungskammer angeordneten Kathode verbunden ist, die elektrisch mit einem Target in Verbindung steht, das zerstäubt wird und dessen zerstäubte Teilchen sich auf dem Substrat niederschlagen, wobei in die Beschichtungs­ kammer Prozeßgase einbringbar sind.The invention relates to a device for coating a substrate, preferably for coating flat glass, with an indium tin oxide layer, consisting of a power source with one in an evacuable Coating chamber arranged cathode is connected that is electrically connected to a target that is atomized and its atomized particles on knock down the substrate, being in the coating Chamber process gases can be introduced.

Oxidische Targets werden bevorzugt im HF-Betrieb mit nur geringen Raten zerstäubt (ca. 5 nm/min), weil bei Erhö­ hung der Quellenleistung starke lokale Verdampfungen an der Targetoberfläche auftreten. Diese lokalen Verdamp­ fungen führen zu Zusammensetzungsschwankungen in den abgeschiedenen Schichten und durch gleichzeitigen Ausstoß schmelzflüssiger Targetpartikel (Spratzerscheinungen) zu Schichtdefekten. Weiterhin ist die Targetlebensdauer durch diese Erscheinungen, die auch bei geringen Quellenleistungen nicht vollständig verschwinden, auf wenige Stunden begrenzt. Die Targets zerfallen. Dieses Problem macht sich unter anderem bemerkbar bei Versuchen, Schich­ ten aus oxidischen Hochtemperatur-Supraleitern aufzustäu­ ben (DE 39 06 954), weshalb man bereits vorgeschlagen hat, zur Hochfrequenzzerstäubung von oxidischen Targets das Target elektrisch isoliert und gut wärmeleitend über dem Targetträger anzuordnen.Oxidic targets are preferred in HF operation with only atomized at low rates (approx. 5 nm / min) because strong local evaporation  the target surface occur. This local vaporizer tests lead to fluctuations in composition deposited layers and by simultaneous ejection molten target particles (splashes) too Layer defects. Furthermore, the target life through these phenomena, even at low source powers not completely disappear in a few Hours limited. The targets disintegrate. This problem is noticeable among other things in attempts, Schich from oxide high-temperature superconductors ben (DE 39 06 954), which is why one has already proposed for high frequency atomization of oxidic targets the target is electrically insulated and has good thermal conductivity to arrange the target carrier.

Bekannt ist eine Aufstäubungsvorrichtung für die Nieder­ schlagung dünner Schichten von Werkstoffen mit Ausnahme von Metallen auf Substraten (DE 30 29 567) mit zwei ein­ ander gegenüberliegenden Elektroden, von denen eine für die Befestigung eines Substrats ausgebildet ist und mit einem an der anderen Elektrode befestigten Target, das aus einem nichtmetallischen Werkstoff besteht, von dem die die dünne Schicht bildenden Atome durch Ionenbeschuß während des Aufstäubens herausgeschleudert werden, wobei dieses Target aus wenigstens zwei übereinandergelegten Targetteilen aus Keramik, Glas oder Harz besteht und wobei ein Luftspalt als Wärmeisolation zwischen dem Tar­ get und der Kathodenplatte vorgesehen ist.A sputtering device for the Nieder is known hitting thin layers of materials except of metals on substrates (DE 30 29 567) with two one other opposite electrodes, one for the attachment of a substrate is formed and with a target attached to the other electrode, the consists of a non-metallic material, of which the atoms forming the thin layer by ion bombardment are thrown out during the sputtering, whereby this target consists of at least two superimposed ones Target parts made of ceramic, glass or resin and with an air gap as thermal insulation between the Tar get and the cathode plate is provided.

Der vorliegenden Erfindung liegt nun die Aufgabe zugrun­ de, eine Vorrichtung zu schaffen, die geeignet ist, das Aufwachsen von Pickeln auf der Oberfläche von Indium- Zinn-Oxid-Targets während des Sputtervorgangs zu reduzie­ ren, um so Änderungen der spezifischen Abstäubrate und der Eigenschaften abgeschiedener Schichten zu verhindern und das gefürchtete Arcing zu vermeiden und die Langzeit­ stabilität des Prozesses zu erhöhen, was insbesondere bei In-line-Anlagen zu einer erheblichen Steigerung der Pro­ duktivität führt, da Ausfallzeiten für die bisher notwen­ dige mechanische Targetreinigung entfallen.The present invention is based on the object de to create a device that is suitable for Growing pimples on the surface of indium To reduce tin oxide targets during the sputtering process  changes in the specific dusting rate and to prevent the properties of deposited layers and avoid the dreaded arcing and the long term increase process stability, which is particularly the case with In-line equipment to significantly increase the pro productivity leads to downtime for the previously required mechanical target cleaning is eliminated.

Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß das zu zerstäubende Target im Abstand zur Kathode gehal­ ten ist, wozu Haltemittel, beispielsweise Zuganker oder Haltezapfen, vorgesehen sind, mit denen das Target mit dem Kathodenkörper, beispielsweise dem Magnetjoch oder dem U-förmigen Element, (galvanisch) verbunden ist.This object is achieved in that the target to be atomized at a distance from the cathode is what holding means, such as tie rods or Retaining pins are provided with which the target with the cathode body, for example the magnetic yoke or the U-shaped element, is (galvanically) connected.

Bei einer alternativen Ausführungsform ist zwischen dem Kathodenkörper, vorzugsweise dem U-förmigen Element, und dem Target ein flacher Heizkörper angeordnet, dessen Heizfläche unmittelbar an der Rückseite des Targets anliegt und dessen kontrollierte Aufheizung bewirkt.In an alternative embodiment, between the Cathode body, preferably the U-shaped element, and the target a flat radiator arranged, the Heating surface lies directly on the back of the target and causes its controlled heating.

Die Erfindung läßt die verschiedensten Ausführungsmög­ lichkeiten zu; eine davon ist in der anhängenden Zeich­ nung schematisch näher dargestellt, die eine Sputteran­ lage für das DC-Sputtern zeigt.The invention allows a wide variety of designs opportunities to; one of them is in the attached drawing voltage shown schematically, which is a sputtering location for DC sputtering shows.

In der Zeichnung ist ein Substrat 1 dargestellt, das mit einer dünnen Schicht 2 versehen werden soll. Diesem Sub­ strat 1 liegt ein Target 3 gegenüber, das zu zerstäuben ist. Das Target 3 steht über mehreren schmalen Tragzapfen 30, 30′ und über einem im Schnitt U-förmigen Element; 4 mit einer Elektrode 5 in Verbindung, die ein Joch 6 ein­ schließt, das zwischen sich und dem Element 4 drei Dauer­ magnete 7, 8, 9 einschließt. Die auf das Target 3 gerich­ teten Polaritäten der Pole der drei Dauermagnete 7, 8, 9 wechseln sich ab, so daß jeweils die Südpole der beiden äußeren Dauermagnete 7, 9 mit dem Nordpol des mittleren Dauermagneten 8 ein etwa kreisbogenförmiges Magnetfeld durch das Target 3 bewirken. Dieses Magnetfeld verdichtet das Plasma vor dem Target 3, so daß es dort, wo die Mag­ netfelder das Maximum ihres Kreisbogens besitzen, seine größte Dichte hat. Die Ionen im Plasma werden durch ein elektrisches Feld beschleunigt, das sich aufgrund einer Gleichspannung aufbaut, die von einer Gleichstromquelle 10 angegeben wird. Diese Gleichstromquelle 10 ist mit ihrem negativen Pol über die elektrische Verbindungslei­ tung 28 und über zwei Induktivitäten 11, 12 mit der Elek­ trode 5 verbunden, wobei die Leitung 28 außerdem über zwei Kondensatoren 29, 31 an Masse liegt. Das elektrische Feld steht senkrecht auf der Oberfläche des Targets 3 und beschleunigt die positiven Ionen des Plasmas in Richtung auf dieses Target. Hierdurch werden mehr oder weniger viele Atome oder Partikel aus dem Target 3 herausgeschla­ gen, und zwar insbesondere aus den Gebieten 13, 14, wo die Magnetfelder ihre Maxima haben. Die zerstäubten Atome oder Partikel wandern in Richtung auf das Substrat 1, wo sie sich als dünne Schicht 2 niederschlagen.The drawing shows a substrate 1 which is to be provided with a thin layer 2 . This Sub strat 1 is a target 3 , which is to be atomized. The target 3 stands over a plurality of narrow trunnions 30 , 30 'and over a U-shaped element in section; 4 with an electrode 5 in connection, which includes a yoke 6 , which includes three permanent magnets 7 , 8 , 9 between itself and the element 4 . The direction of the target 3 polarities of the poles of the three permanent magnets 7 , 8 , 9 alternate, so that the south poles of the two outer permanent magnets 7 , 9 with the north pole of the central permanent magnet 8 cause an approximately circular magnetic field through the target 3 . This magnetic field compresses the plasma in front of the target 3 , so that it has its greatest density where the magnetic fields have the maximum of their arc. The ions in the plasma are accelerated by an electric field that builds up on the basis of a direct voltage that is indicated by a direct current source 10 . This direct current source 10 is connected with its negative pole via the electrical connection line 28 and via two inductors 11 , 12 to the electrode 5 , the line 28 also being connected to ground via two capacitors 29 , 31 . The electric field is perpendicular to the surface of the target 3 and accelerates the positive ions of the plasma towards this target. As a result, more or fewer atoms or particles are knocked out of the target 3 , in particular from the areas 13 , 14 where the magnetic fields have their maxima. The atomized atoms or particles migrate towards the substrate 1 , where they are deposited as a thin layer 2 .

Die Kathode 5 mit ihrem Target 3 ist von einer Blende 4 umschlossen, wobei der Teil der Beschichtungskammer 15, der unmittelbar vor dem Target 3 vorgesehen ist, mit 15a bezeichnet ist. Die Blende 24 weist auf ihrer unteren Seite eine Öffnung 26 auf, durch die die aus dem Target 3 herausgeschlagenen Teilchen auf das Substrat 1 hindurch beschleunigt werden. The cathode 5 with its target 3 is enclosed by an aperture 4 , the part of the coating chamber 15 which is provided directly in front of the target 3 being designated 15 a. The aperture 24 has on its lower side an opening 26 through which the particles knocked out of the target 3 are accelerated onto the substrate 1 .

Für die Steuerung der dargestellten Anordnung kann ein Prozeßrechner vorgesehen werden, der Meßdaten verarbeitet und Steuerungsbefehle abgibt. Diesem Prozeßrechner können beispielsweise die Werte des gemessenen Partialdrucks in der Prozeßkammer 15 zugeführt werden. Aufgrund dieser und anderer Daten kann er zum Beispiel den Gasfluß über die Ventile 18, 19 regeln und die Spannung an der Kathode 5 einstellen. Der Prozeßrechner ist auch in der Lage, alle anderen Variablen, zum Beispiel Kathodenstrom und magne­ tische Feldstärke, zu regeln. Da derartige Prozeßrechner bekannt sind, wird auf eine Beschreibung ihres Aufbaus verzichtet.A process computer can be provided to control the arrangement shown, which processes measurement data and issues control commands. For example, the values of the measured partial pressure in the process chamber 15 can be fed to this process computer. Based on this and other data, it can regulate the gas flow via the valves 18 , 19 and adjust the voltage at the cathode 5 , for example. The process computer is also able to control all other variables, for example cathode current and magnetic field strength. Since such process computers are known, a description of their structure is omitted.

Während des Prozesses wird über das Ventil 18 und den Anschluß 21 Argon aus dem Behälter 16 in die Prozeßkammer 15, 15a eingelassen. Um auch reaktive Materialien sput­ tern zu können, ist außerdem noch der Behälter 17, der Sauerstoff enthält, vorgesehen, wobei der Behälter 17 über das Ventil 19 und den Anschluß 20 mit der Prozeß­ kammer 15, 15a verbunden ist.During the process, argon is admitted from the container 16 into the process chamber 15 , 15 a via the valve 18 and the connection 21 . In order to sputter tern reactive materials, the container 17 containing oxygen is also provided, the container 17 via the valve 19 and the connection 20 with the process chamber 15 , 15 a is connected.

Wie die Zeichnung deutlich zeigt, ist das Target 3 nicht unmittelbar mit dem U-förmigen Element 4 verbunden, son­ dern mit Abstand a vor diesem Element 4 angeordnet. In folge dieses Spalts zwischen der Unterseite des Elements 4 und der Oberseite des Targets 3 erhitzt sich das Target 3 während des Beschichtungsvorgangs auf etwa 200-400°C, wodurch das Aufwachsen von Pickeln an der Unterseite des Indium-Zinn-Oxid-Targets 3 entscheidend - und zwar ent­ gegen der allgemeinen Lehrmeinung - verringert wird.As the drawing clearly shows, the target 3 is not directly connected to the U-shaped element 4 , but is arranged at a distance a in front of this element 4 . In consequence of this the gap between the underside of the element 4 and the upper surface of the target 3, the target 3 is heated during the coating process at about 200-400 ° C, whereby the growth of pimples on the underside of indium-tin-oxide target 3 decisive - and against the general doctrine - is reduced.

BezugszeichenlisteReference symbol list

 1 Substrat
 2 Schicht
 3 Target
 4 U-förmiges Element
 5 Elektrode
 6 Joch
 7 Dauermagnet
 8 Dauermagnet
 9 Dauermagnet
10 Gleichstromquelle
11 Induktivität
12 Induktivität
13 Sputtergraben (Gebiet)
14 Sputtergraben (Gebiet)
15, 15a Raum, Beschichtungskammer
16 Gasbehälter
17 Gasbehälter
18 Ventil
19 Ventil
20 Einlaßstutzen
21 Einlaßstutzen
22 Gaszuführungsleitung
23 Gaszuführungsleitung
24 Blende
25 Behälter, Prozeßkammer
26 Öffnung
27 elektrischer Anschluß (Masse-Leitung)
28 elektrischer Anschluß
29 Kondensator
30 Tragzapfen
31 Kondensator 1 substrate
2 layer
3 target
4 U-shaped element
5 electrode
6 yokes
7 permanent magnet
8 permanent magnet
9 permanent magnet
10 DC power source
11 inductance
12 inductance
13 Sputtergraben (area)
14 Sputtergraben (area)
15, 15 a room, coating chamber
16 gas containers
17 gas tanks
18 valve
19 valve
20 inlet connection
21 inlet connection
22 gas supply line
23 gas supply line
24 aperture
25 containers, process chamber
26 opening
27 electrical connection (ground line)
28 electrical connection
29 capacitor
30 trunnions
31 capacitor

Claims (2)

1. Vorrichtung zum Beschichten eines Substrats, vor­ zugsweise zum Beschichten von Flachglas, mit einer Indium-Zinn-Oxid-Schicht, bestehend aus einer Strom­ quelle (10), die mit einer in einer evakuierbaren Beschichtungskarner (15, 15a) angeordneten Kathode (5) verbunden ist, die elektrisch mit einem Target (3) in Verbindung steht, das zerstäubt wird und dessen zerstäubte Teilchen sich auf dem Substrat (1) niederschlagen, wobei in die Beschichtungskammer (15, 15a) Prozeßgase einbringbar sind, dadurch gekennzeichnet, daß das zu zerstäubende Target (3) im Abstand (a) zur Kathode (5) gehalten ist, wozu Haltemittel, beispielsweise Zuganker oder Halte­ zapfen (30, 31), vorgesehen sind, mit denen das Target (3) mit dem Kathodenkörper, beispielsweise dem Magnetjoch (6) oder dem U-förmigen Element (4), verbunden ist.1. Device for coating a substrate, preferably for coating flat glass, with an indium tin oxide layer, consisting of a current source ( 10 ) which is arranged with a cathode ( 15 , 15 a) arranged in an evacuable coating carcass ( 5 ) which is electrically connected to a target ( 3 ) which is atomized and whose atomized particles are deposited on the substrate ( 1 ), process gases being able to be introduced into the coating chamber ( 15 , 15 a), characterized in that that the target ( 3 ) to be atomized is held at a distance (a) from the cathode ( 5 ), for which purpose holding means, for example tie rods or holding pins ( 30 , 31 ), are provided, by means of which the target ( 3 ) with the cathode body, for example the magnetic yoke ( 6 ) or the U-shaped element ( 4 ). 2. Vorrichtung zum Beschichten eines Substrats, vor­ zugsweise zum Beschichten von Flachglas, mit einer Indium-Zinn-Oxid-Schicht, bestehend aus einer Strom­ quelle (10), die mit einer in einer evakuierbaren Beschichtungskammer (15, 15a) angeordneten Kathode (5) verbunden ist, die elektrisch mit einem Target (3) in Verbindung steht, das zerstäubt wird und dessen zerstäubte Teilchen sich auf dem Substrat (1) niederschlagen, wobei in die Beschichtungskammer (15, 15a) Prozeßgase einbringbar sind, dadurch gekennzeichnet, daß zwischen dem Kathodenkörper, vorzugsweise dem U-förmigen Element (4), und dem Target (3) ein flacher Heizkörper angeordnet ist, dessen Heizfläche unmittelbar an der Rückseite des Targets (3) anliegt und dessen kontrollierte Aufhei­ zung bewirkt.2. Device for coating a substrate, preferably for coating flat glass, with an indium tin oxide layer, consisting of a current source ( 10 ), which is arranged in an evacuable coating chamber ( 15 , 15 a) ( 5 ) which is electrically connected to a target ( 3 ) which is atomized and whose atomized particles are deposited on the substrate ( 1 ), process gases being able to be introduced into the coating chamber ( 15 , 15 a), characterized in that that between the cathode body, preferably the U-shaped element ( 4 ), and the target ( 3 ), a flat radiator is arranged, the heating surface rests directly on the back of the target ( 3 ) and its controlled heating causes.
DE19914106771 1991-03-04 1991-03-04 Flat glass coating - has gap between target and cathode in vapour deposition appts. to prevent pimple formation on the deposited layer Withdrawn DE4106771A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19914106771 DE4106771A1 (en) 1991-03-04 1991-03-04 Flat glass coating - has gap between target and cathode in vapour deposition appts. to prevent pimple formation on the deposited layer
CH311291A CH684000A5 (en) 1991-03-04 1991-10-24 An apparatus for coating a substrate, preferably for the coating of flat glass, with an indium-tin-oxide layer.
BE9200035A BE1006649A3 (en) 1991-03-04 1992-01-15 Device for covering a substrate and preference for coating of flat glass with a layer indium oxide and tin.
FI920457A FI920457A (en) 1991-03-04 1992-02-03 ANORDNING FOER ATT BESTRYKA ETT SUBSTRAT, FOERETRAEDESVIS ETT PLANGLAS, MED ETT INDIUM-TENNOXIDSKIKT
JP4461292A JPH0565632A (en) 1991-03-04 1992-03-02 Apparatus for coating base with indium/tin oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19914106771 DE4106771A1 (en) 1991-03-04 1991-03-04 Flat glass coating - has gap between target and cathode in vapour deposition appts. to prevent pimple formation on the deposited layer

Publications (1)

Publication Number Publication Date
DE4106771A1 true DE4106771A1 (en) 1992-09-10

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DE19914106771 Withdrawn DE4106771A1 (en) 1991-03-04 1991-03-04 Flat glass coating - has gap between target and cathode in vapour deposition appts. to prevent pimple formation on the deposited layer

Country Status (5)

Country Link
JP (1) JPH0565632A (en)
BE (1) BE1006649A3 (en)
CH (1) CH684000A5 (en)
DE (1) DE4106771A1 (en)
FI (1) FI920457A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10018842A1 (en) * 2000-04-14 2001-10-25 Ardenne Anlagentech Gmbh Process for applying TCO layers to substrates comprises sputtering material in a high vacuum from a ceramic target as coating source which is then deposited as a TCO layer on the substrate
WO2011098538A1 (en) * 2010-02-11 2011-08-18 Applied Materials, Inc. Method for producing an ito layer and sputtering system

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SU740157A3 (en) * 1971-02-05 1980-06-05 Триплекс Сэйфти Гласс Компани Лтд (Фирма) Device for coating surface of base with transparent electroconducting film
DE3029567A1 (en) * 1980-07-15 1982-03-18 Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto SPUTTER DEVICE FOR DEPOSITING NON-METAL THIN LAYERS ON SUBSTRATES

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DE3210351A1 (en) * 1982-03-20 1983-09-22 Leybold-Heraeus GmbH, 5000 Köln Process and device for producing magnetic recording films

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU740157A3 (en) * 1971-02-05 1980-06-05 Триплекс Сэйфти Гласс Компани Лтд (Фирма) Device for coating surface of base with transparent electroconducting film
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10018842A1 (en) * 2000-04-14 2001-10-25 Ardenne Anlagentech Gmbh Process for applying TCO layers to substrates comprises sputtering material in a high vacuum from a ceramic target as coating source which is then deposited as a TCO layer on the substrate
DE10018842C2 (en) * 2000-04-14 2002-03-21 Ardenne Anlagentech Gmbh Process for applying TCO layers on substrates
WO2011098538A1 (en) * 2010-02-11 2011-08-18 Applied Materials, Inc. Method for producing an ito layer and sputtering system
EP2360290A1 (en) * 2010-02-11 2011-08-24 Applied Materials, Inc. Method for producing an ITO layer and sputtering system

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BE1006649A3 (en) 1994-11-08
JPH0565632A (en) 1993-03-19
FI920457A0 (en) 1992-02-03
CH684000A5 (en) 1994-06-30
FI920457A (en) 1992-09-05

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