DE4091748T - - Google Patents

Info

Publication number
DE4091748T
DE4091748T DE19904091748 DE4091748T DE4091748T DE 4091748 T DE4091748 T DE 4091748T DE 19904091748 DE19904091748 DE 19904091748 DE 4091748 T DE4091748 T DE 4091748T DE 4091748 T DE4091748 T DE 4091748T
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19904091748
Other languages
German (de)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE4091748T publication Critical patent/DE4091748T/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
DE19904091748 1989-09-26 1990-09-17 Withdrawn DE4091748T (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI894534A FI83721C (fi) 1989-09-26 1989-09-26 Dopningsfoerfarande

Publications (1)

Publication Number Publication Date
DE4091748T true DE4091748T (ko) 1992-08-27

Family

ID=8529054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19904091748 Withdrawn DE4091748T (ko) 1989-09-26 1990-09-17

Country Status (6)

Country Link
JP (1) JPH05500385A (ko)
DE (1) DE4091748T (ko)
FI (1) FI83721C (ko)
FR (1) FR2652358B1 (ko)
GB (1) GB2252450B (ko)
WO (1) WO1991005028A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103897692A (zh) * 2014-03-31 2014-07-02 中国科学院上海光学精密机械研究所 过渡金属离子浓度渐变掺杂硫化锌或硒化锌及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554794B2 (ko) * 1973-07-31 1980-01-31
GB2047462B (en) * 1979-04-20 1983-04-20 Thomas J Method of manufacturing thin film electroluminescent devices
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
JPS58157886A (ja) * 1982-03-16 1983-09-20 Matsushita Electric Ind Co Ltd 螢光体薄膜の製造方法
JPS6287487A (ja) * 1985-10-14 1987-04-21 Sharp Corp 不純物ド−プ単結晶形成方法

Also Published As

Publication number Publication date
FR2652358A1 (fr) 1991-03-29
GB2252450B (en) 1993-01-20
WO1991005028A1 (en) 1991-04-18
FI83721B (fi) 1991-04-30
FI894534A0 (fi) 1989-09-26
GB2252450A (en) 1992-08-05
FI83721C (fi) 1993-11-22
GB9205180D0 (en) 1992-05-13
FR2652358B1 (fr) 1993-09-03
JPH05500385A (ja) 1993-01-28

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee