DE3881189T2 - Anlage und verfahren zur zufuehrung einer organometallischen verbindung. - Google Patents

Anlage und verfahren zur zufuehrung einer organometallischen verbindung.

Info

Publication number
DE3881189T2
DE3881189T2 DE8888312191T DE3881189T DE3881189T2 DE 3881189 T2 DE3881189 T2 DE 3881189T2 DE 8888312191 T DE8888312191 T DE 8888312191T DE 3881189 T DE3881189 T DE 3881189T DE 3881189 T2 DE3881189 T2 DE 3881189T2
Authority
DE
Germany
Prior art keywords
inputing
organometallic compound
organometallic
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888312191T
Other languages
English (en)
Other versions
DE3881189D1 (de
Inventor
Atsuhiko Hiai
Kazuo Wakimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Application granted granted Critical
Publication of DE3881189D1 publication Critical patent/DE3881189D1/de
Publication of DE3881189T2 publication Critical patent/DE3881189T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B31/00—Manufacture of rippled or crackled glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J7/00—Apparatus for generating gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE8888312191T 1987-12-24 1988-12-22 Anlage und verfahren zur zufuehrung einer organometallischen verbindung. Expired - Fee Related DE3881189T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62325385A JPH01168331A (ja) 1987-12-24 1987-12-24 有機金属化合物の飽和方法

Publications (2)

Publication Number Publication Date
DE3881189D1 DE3881189D1 (de) 1993-06-24
DE3881189T2 true DE3881189T2 (de) 1993-09-02

Family

ID=18176242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888312191T Expired - Fee Related DE3881189T2 (de) 1987-12-24 1988-12-22 Anlage und verfahren zur zufuehrung einer organometallischen verbindung.

Country Status (6)

Country Link
US (1) US5019423A (de)
EP (1) EP0323145B1 (de)
JP (1) JPH01168331A (de)
KR (1) KR910001925B1 (de)
CA (1) CA1310823C (de)
DE (1) DE3881189T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269389A (ja) * 1988-08-31 1990-03-08 Toyo Stauffer Chem Co 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法
US5381605A (en) * 1993-01-08 1995-01-17 Photonics Research Incorporated Method and apparatus for delivering gas
US5989305A (en) * 1995-03-09 1999-11-23 Shin-Etsu Chemical Co., Ltd. Feeder of a solid organometallic compound
JPH0940489A (ja) * 1995-03-30 1997-02-10 Pioneer Electron Corp Ｍｏｃｖｄの固体原料供給方法及び供給装置
US6663713B1 (en) * 1996-01-08 2003-12-16 Applied Materials Inc. Method and apparatus for forming a thin polymer layer on an integrated circuit structure
JP3909792B2 (ja) * 1999-08-20 2007-04-25 パイオニア株式会社 化学気相成長法における原料供給装置及び原料供給方法
JP2003031050A (ja) * 2001-07-16 2003-01-31 Nec Corp 水銀を含む銅酸化物超伝導体薄膜、その製造装置およびその製造方法
US20050109281A1 (en) * 2002-03-22 2005-05-26 Holger Jurgensen Process for coating a substrate, and apparatus for carrying out the process
GB2395839A (en) * 2002-11-30 2004-06-02 Sharp Kk MBE growth of p-type nitride semiconductor materials
KR20050004379A (ko) * 2003-07-02 2005-01-12 삼성전자주식회사 원자층 증착용 가스 공급 장치
JP4585182B2 (ja) * 2003-07-11 2010-11-24 東ソー・ファインケム株式会社 トリメチルインジウムの充填方法および充填容器
US7261118B2 (en) * 2003-08-19 2007-08-28 Air Products And Chemicals, Inc. Method and vessel for the delivery of precursor materials
CA2566944C (en) * 2004-05-20 2016-10-11 Nam Hung Tran Bubbler for constant vapor delivery of a solid chemical
GB2432371B (en) * 2005-11-17 2011-06-15 Epichem Ltd Improved bubbler for the transportation of substances by a carrier gas
US9109287B2 (en) * 2006-10-19 2015-08-18 Air Products And Chemicals, Inc. Solid source container with inlet plenum
GB2444143B (en) * 2006-11-27 2009-10-28 Sumitomo Chemical Co Apparatus of supplying organometallic compound
WO2011053505A1 (en) 2009-11-02 2011-05-05 Sigma-Aldrich Co. Evaporator
WO2014011292A1 (en) * 2012-07-13 2014-01-16 Omniprobe, Inc. Gas injection system for energetic-beam instruments

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2738762A (en) * 1951-10-08 1956-03-20 Ohio Commw Eng Co Apparatus for the deposition of nonconductive copper coatings from vapor phase
US2701901A (en) * 1952-04-03 1955-02-15 Ohio Commw Eng Co Method of manufacturing thin nickel foils
GB787076A (en) * 1954-10-20 1957-12-04 Ohio Commw Eng Co Improvements in or relating to gas plating
JPS59204543A (ja) * 1983-05-10 1984-11-19 住友ベークライト株式会社 積層導電フイルム
FR2569207B1 (fr) * 1984-08-14 1986-11-14 Mellet Robert Procede et dispositif d'obtention d'un courant gazeux contenant un compose a l'etat de vapeur, utilisable notamment pour introduire ce compose dans un reacteur d'epitaxie

Also Published As

Publication number Publication date
JPH01168331A (ja) 1989-07-03
CA1310823C (en) 1992-12-01
KR890009781A (ko) 1989-08-04
EP0323145B1 (de) 1993-05-19
EP0323145A1 (de) 1989-07-05
US5019423A (en) 1991-05-28
KR910001925B1 (ko) 1991-03-30
DE3881189D1 (de) 1993-06-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee