DE3850865D1 - Vorrichtung für epitaxiales Aufwachsen. - Google Patents

Vorrichtung für epitaxiales Aufwachsen.

Info

Publication number
DE3850865D1
DE3850865D1 DE3850865T DE3850865T DE3850865D1 DE 3850865 D1 DE3850865 D1 DE 3850865D1 DE 3850865 T DE3850865 T DE 3850865T DE 3850865 T DE3850865 T DE 3850865T DE 3850865 D1 DE3850865 D1 DE 3850865D1
Authority
DE
Germany
Prior art keywords
epitaxial growth
growth device
epitaxial
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3850865T
Other languages
English (en)
Other versions
DE3850865T2 (de
Inventor
Yoshihiko Saito
Yoshiaki Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3850865D1 publication Critical patent/DE3850865D1/de
Publication of DE3850865T2 publication Critical patent/DE3850865T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
DE3850865T 1987-12-18 1988-12-16 Vorrichtung für epitaxiales Aufwachsen. Expired - Fee Related DE3850865T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62320427A JPH01161824A (ja) 1987-12-18 1987-12-18 気相エピタキシャル成長装置

Publications (2)

Publication Number Publication Date
DE3850865D1 true DE3850865D1 (de) 1994-09-01
DE3850865T2 DE3850865T2 (de) 1994-12-08

Family

ID=18121332

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850865T Expired - Fee Related DE3850865T2 (de) 1987-12-18 1988-12-16 Vorrichtung für epitaxiales Aufwachsen.

Country Status (4)

Country Link
EP (1) EP0320971B1 (de)
JP (1) JPH01161824A (de)
KR (1) KR930000610B1 (de)
DE (1) DE3850865T2 (de)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4499354A (en) * 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
JPS59149020A (ja) * 1983-02-16 1984-08-25 Hitachi Ltd 縦型反応炉
JPS6058613A (ja) * 1983-09-12 1985-04-04 Hitachi Ltd エピタキシャル装置
JPS60161616A (ja) * 1984-02-01 1985-08-23 Matsushita Electric Ind Co Ltd 半導体ウエハの赤外線加熱装置
JP2525348B2 (ja) * 1984-02-09 1996-08-21 富士通株式会社 気相成長方法および装置
US4849260A (en) * 1986-06-30 1989-07-18 Nihon Sinku Gijutsu Kabushiki Kaisha Method for selectively depositing metal on a substrate

Also Published As

Publication number Publication date
KR890011131A (ko) 1989-08-12
DE3850865T2 (de) 1994-12-08
KR930000610B1 (ko) 1993-01-25
EP0320971B1 (de) 1994-07-27
EP0320971A3 (en) 1990-09-26
EP0320971A2 (de) 1989-06-21
JPH01161824A (ja) 1989-06-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee