DE3751209D1 - Deposition and dopants useful in the manufacture of hydrogenated, amorphous silicon alloys for photovoltaic and other semiconductor devices. - Google Patents

Deposition and dopants useful in the manufacture of hydrogenated, amorphous silicon alloys for photovoltaic and other semiconductor devices.

Info

Publication number
DE3751209D1
DE3751209D1 DE3751209T DE3751209T DE3751209D1 DE 3751209 D1 DE3751209 D1 DE 3751209D1 DE 3751209 T DE3751209 T DE 3751209T DE 3751209 T DE3751209 T DE 3751209T DE 3751209 D1 DE3751209 D1 DE 3751209D1
Authority
DE
Germany
Prior art keywords
photovoltaic
useful
amorphous silicon
silicon alloys
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3751209T
Other languages
German (de)
Other versions
DE3751209T2 (en
Inventor
Charles Robert Dickson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solarex Corp
Original Assignee
Solarex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarex Corp filed Critical Solarex Corp
Application granted granted Critical
Publication of DE3751209D1 publication Critical patent/DE3751209D1/en
Publication of DE3751209T2 publication Critical patent/DE3751209T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Compounds having the formula (MX3)n M'X4-n wherein M and M' are different Group 4A atoms, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula (SiX3)m L X3-m wherein L is a Group 5A atom selected from the group of phosphorous, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula YJX2 wherein Y is halogen or carbonyl, J is a Group 3A atom and X is hydrogen, halogen or mixtures thereof, are useful in the formation of postively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.
DE3751209T 1986-02-18 1987-02-13 Deposition and dopants useful in the manufacture of hydrogenated, amorphous silicon alloys for photovoltaic and other semiconductor devices. Expired - Fee Related DE3751209T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83007386A 1986-02-18 1986-02-18

Publications (2)

Publication Number Publication Date
DE3751209D1 true DE3751209D1 (en) 1995-05-11
DE3751209T2 DE3751209T2 (en) 1995-08-10

Family

ID=25256250

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3751209T Expired - Fee Related DE3751209T2 (en) 1986-02-18 1987-02-13 Deposition and dopants useful in the manufacture of hydrogenated, amorphous silicon alloys for photovoltaic and other semiconductor devices.

Country Status (12)

Country Link
EP (1) EP0233613B1 (en)
JP (1) JPH06103667B2 (en)
KR (1) KR910001876B1 (en)
CN (1) CN1024929C (en)
AT (1) ATE120884T1 (en)
AU (3) AU604227B2 (en)
CA (1) CA1332343C (en)
DE (1) DE3751209T2 (en)
EG (1) EG18056A (en)
ES (1) ES2074041T3 (en)
IE (1) IE870367L (en)
IN (1) IN168381B (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
EP0407088B1 (en) * 1989-06-28 1998-05-06 Mitsui Chemicals, Inc. Method of forming an amorphous semiconductor film
DE3942058A1 (en) * 1989-12-20 1991-06-27 Phototronics Solartechnik Gmbh New tetra:silyl methane and prepn. from aryl halo-silane - and carbon tetra:halide by redn. halogenation and hydrogenation, for amorphous silicon prodn.
DE3941997C1 (en) * 1989-12-20 1991-01-24 Phototronics Solartechnik Gmbh, 8011 Putzbrunn, De Prepn. of di-, tri- or tetra-silyl-methane - by reacting aryl-halo-silane with di-, tri- or tetra -halo-methane in presence of reducing metal, and reacting prod. with hydrogen halide
EP1092755A4 (en) * 1999-03-30 2004-12-22 Jsr Corp Coating composition
EP1421607A2 (en) 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
WO2006031240A1 (en) * 2004-09-14 2006-03-23 Arizona Board Of Regents Hydride compounds with silicon and germanium core atoms and method of synthesizing same
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
WO2007062056A2 (en) * 2005-11-23 2007-05-31 The Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University Silicon-germanium hydrides and methods for making and using same
EP1918966A1 (en) 2006-11-02 2008-05-07 Dow Corning Corporation Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma
EP1919264A1 (en) 2006-11-02 2008-05-07 Dow Corning Corporation Device for forming a film by deposition from a plasma
EP1918414A1 (en) 2006-11-02 2008-05-07 Dow Corning Corporation Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance
EP1923483A1 (en) 2006-11-02 2008-05-21 Dow Corning Corporation Deposition of amorphous silicon films by electron cyclotron resonance
EP1918967B1 (en) 2006-11-02 2013-12-25 Dow Corning Corporation Method of forming a film by deposition from a plasma
EP1918965A1 (en) 2006-11-02 2008-05-07 Dow Corning Corporation Method and apparatus for forming a film by deposition from a plasma
DE102008016696A1 (en) 2007-03-30 2008-12-11 Rev Renewable Energy Ventures, Inc. Plasma-assisted organofunctionalization of silicon tetrahalides or organohalosilanes
KR101501700B1 (en) * 2007-04-02 2015-03-11 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 Novel methods for making and using halosilylgermanes
NO342873B1 (en) 2008-02-11 2018-08-20 Inst Energiteknik Semiconductor Component
CN103628044A (en) * 2013-11-07 2014-03-12 中山市创科科研技术服务有限公司 Device for preparing alpha-SiH film by photochemical vapor deposition
CN109686802A (en) * 2018-11-09 2019-04-26 惠州凯珑光电有限公司 A kind of packaging technology of electronic component and mould group
CN115117201B (en) * 2022-06-24 2024-03-12 英利能源发展有限公司 Silicon wafer phosphorus or boron doping method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
FR2485810A1 (en) * 1980-06-24 1981-12-31 Thomson Csf PROCESS FOR PRODUCING A LAYER CONTAINING SILICON AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME
JPS59182521A (en) * 1983-04-01 1984-10-17 Mitsui Toatsu Chem Inc Formation of silicon hydrite thin film
JPS59200248A (en) * 1983-04-28 1984-11-13 Canon Inc Production of image forming member
DE3429899A1 (en) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo METHOD FOR FORMING A DEPOSITION FILM
JPS60117712A (en) * 1983-11-30 1985-06-25 Toshiba Corp Forming method of thin film
JPS60154521A (en) * 1984-01-23 1985-08-14 Semiconductor Energy Lab Co Ltd Manufacture of silicon carbide film
JPH0669029B2 (en) * 1984-07-25 1994-08-31 工業技術院長 Method for forming p-type semiconductor thin film
US4695331A (en) * 1985-05-06 1987-09-22 Chronar Corporation Hetero-augmentation of semiconductor materials
GB2177119B (en) * 1985-06-26 1989-04-26 Plessey Co Plc Organometallic chemical vapour deposition
IL79612A0 (en) * 1985-08-09 1986-11-30 American Cyanamid Co Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices

Also Published As

Publication number Publication date
JPH06103667B2 (en) 1994-12-14
CA1332343C (en) 1994-10-11
KR870008376A (en) 1987-09-26
IE870367L (en) 1987-08-18
DE3751209T2 (en) 1995-08-10
CN1024929C (en) 1994-06-08
IN168381B (en) 1991-03-23
ATE120884T1 (en) 1995-04-15
AU6883987A (en) 1987-08-20
ES2074041T3 (en) 1995-09-01
AU6767190A (en) 1991-03-14
AU604227B2 (en) 1990-12-13
CN87100729A (en) 1987-11-25
AU640408B2 (en) 1993-08-26
EP0233613B1 (en) 1995-04-05
AU6308090A (en) 1990-12-13
AU637852B2 (en) 1993-06-10
EG18056A (en) 1991-11-30
EP0233613A3 (en) 1990-11-28
EP0233613A2 (en) 1987-08-26
KR910001876B1 (en) 1991-03-28
JPS6351680A (en) 1988-03-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee