DE3750158T2 - Dünnschicht-Festkörperanordnung. - Google Patents

Dünnschicht-Festkörperanordnung.

Info

Publication number
DE3750158T2
DE3750158T2 DE3750158T DE3750158T DE3750158T2 DE 3750158 T2 DE3750158 T2 DE 3750158T2 DE 3750158 T DE3750158 T DE 3750158T DE 3750158 T DE3750158 T DE 3750158T DE 3750158 T2 DE3750158 T2 DE 3750158T2
Authority
DE
Germany
Prior art keywords
thin
film solid
state arrangement
arrangement
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750158T
Other languages
English (en)
Other versions
DE3750158D1 (de
Inventor
James A Schuetz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of DE3750158D1 publication Critical patent/DE3750158D1/de
Application granted granted Critical
Publication of DE3750158T2 publication Critical patent/DE3750158T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1193—Magnetic recording head with interlaminar component [e.g., adhesion layer, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12819—Group VB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12931—Co-, Fe-, or Ni-base components, alternative to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12944—Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12951—Fe-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Hall/Mr Elements (AREA)
DE3750158T 1986-12-08 1987-12-04 Dünnschicht-Festkörperanordnung. Expired - Fee Related DE3750158T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/939,316 US5019461A (en) 1986-12-08 1986-12-08 Resistive overlayer for thin film devices

Publications (2)

Publication Number Publication Date
DE3750158D1 DE3750158D1 (de) 1994-08-04
DE3750158T2 true DE3750158T2 (de) 1994-11-10

Family

ID=25472943

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750158T Expired - Fee Related DE3750158T2 (de) 1986-12-08 1987-12-04 Dünnschicht-Festkörperanordnung.

Country Status (4)

Country Link
US (1) US5019461A (de)
EP (1) EP0271018B1 (de)
JP (1) JP2583431B2 (de)
DE (1) DE3750158T2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10150233B4 (de) * 2001-10-11 2009-01-29 Sensitec Gmbh Dünnschichtbauelement mit einer in einer ersten Ebene über einem Substrat befindlichen resistiven dünnen Schicht
US9076717B2 (en) 2006-12-08 2015-07-07 Infineon Technologies Ag Semiconductor component comprising magnetic field sensor
DE102006057970B4 (de) * 2006-12-08 2020-01-02 Infineon Technologies Ag Halbleiterbauteil mit einem Magnetfeldsensor und Verfahren zur Herstellung

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0304280B1 (de) * 1987-08-21 1996-05-29 Nippondenso Co., Ltd. Anordnung zur Detektion von Magnetismus
US6343032B1 (en) 1999-07-07 2002-01-29 Iowa State University Research Foundation, Inc. Non-volatile spin dependent tunnel junction circuit
US6542000B1 (en) 1999-07-30 2003-04-01 Iowa State University Research Foundation, Inc. Nonvolatile programmable logic devices
US6693826B1 (en) 2001-07-30 2004-02-17 Iowa State University Research Foundation, Inc. Magnetic memory sensing method and apparatus
US7126330B2 (en) * 2004-06-03 2006-10-24 Honeywell International, Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device
US20090315554A1 (en) * 2008-06-20 2009-12-24 Honeywell International Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113780C (de) * 1957-10-23
US3125743A (en) * 1958-03-19 1964-03-17 Nondestructive readout of magnetic cores
US3375503A (en) * 1963-09-13 1968-03-26 Ibm Magnetostatically coupled magnetic thin film devices
US3461438A (en) * 1964-04-06 1969-08-12 Ibm Memory element having two orthogonally disposed magnetic films
US3587069A (en) * 1964-10-31 1971-06-22 Zaidan Hojin Parametron Kenkyu Ferromagnetic thin-film memory element and a method of recording information therein
US3452334A (en) * 1964-12-28 1969-06-24 Ibm Magnetic film memories with an intermediate conductive element as a drive line return path
US3382053A (en) * 1965-04-05 1968-05-07 Western Electric Co Tantalum films of unique structure
US3525023A (en) * 1965-08-05 1970-08-18 Sperry Rand Corp Multilayer thin film magnetic memory element
FR1541256A (fr) * 1966-12-07 Ibm Dispositif de mémoire associative
US3524173A (en) * 1967-05-22 1970-08-11 Ampex Process for electrodeposition of anisotropic magnetic films and a product formed by the process
US3701983A (en) * 1969-12-19 1972-10-31 Sylvania Electric Prod Magnetostatically coupled thin-film magnetic memory devices
US3623038A (en) * 1969-12-19 1971-11-23 Gte Sylvania Inc Pheral layer magnetic thin film element
US3617816A (en) * 1970-02-02 1971-11-02 Ibm Composite metallurgy stripe for semiconductor devices
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
US3847658A (en) * 1972-01-14 1974-11-12 Western Electric Co Article of manufacture having a film comprising nitrogen-doped beta tantalum
BE791139A (fr) * 1972-01-14 1973-03-01 Western Electric Co Procede pour le depot de beta-tantale dope par l'azote
US4000055A (en) * 1972-01-14 1976-12-28 Western Electric Company, Inc. Method of depositing nitrogen-doped beta tantalum
US3825802A (en) * 1973-03-12 1974-07-23 Western Electric Co Solid capacitor
FR2276658A1 (fr) * 1974-06-25 1976-01-23 Tecsi Poste de lecture pour un registre a propagation de domaines magnetiques sur une couche mince
JPS576962Y2 (de) * 1974-07-26 1982-02-09
US4097802A (en) * 1975-06-30 1978-06-27 International Business Machines Corporation Magnetoresistive field sensor with a magnetic shield which prevents sensor response at fields below saturation of the shield
US4307132A (en) * 1977-12-27 1981-12-22 International Business Machines Corp. Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer
US4208725A (en) * 1979-02-23 1980-06-17 Sperry Corporation Magneto-resistive detector for cross-tie wall memory system
DE3063506D1 (en) * 1979-08-31 1983-07-07 Fujitsu Ltd A tantalum thin film capacitor and process for producing the same
EP0035118B1 (de) * 1980-02-28 1985-11-21 Kabushiki Kaisha Toshiba Lichtemittierendes Halbleiterelement der III-V-Verbindung und Verfahren zu seiner Herstellung
JPS584992A (ja) * 1981-07-01 1983-01-12 Hitachi Ltd 磁気電気変換素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10150233B4 (de) * 2001-10-11 2009-01-29 Sensitec Gmbh Dünnschichtbauelement mit einer in einer ersten Ebene über einem Substrat befindlichen resistiven dünnen Schicht
US9076717B2 (en) 2006-12-08 2015-07-07 Infineon Technologies Ag Semiconductor component comprising magnetic field sensor
DE102006057970B4 (de) * 2006-12-08 2020-01-02 Infineon Technologies Ag Halbleiterbauteil mit einem Magnetfeldsensor und Verfahren zur Herstellung

Also Published As

Publication number Publication date
EP0271018A3 (en) 1990-03-14
JP2583431B2 (ja) 1997-02-19
JPS63232470A (ja) 1988-09-28
EP0271018B1 (de) 1994-06-29
DE3750158D1 (de) 1994-08-04
US5019461A (en) 1991-05-28
EP0271018A2 (de) 1988-06-15

Similar Documents

Publication Publication Date Title
FI870419A0 (fi) Stoedsubstans foer anvaendning i detergentkompositionen.
FI870082A (fi) Munstycksarrangemang i tvao delar foer skummedel.
FI872861A0 (fi) Kaopa foer insaettning i en kopplingstavla.
FI870025A0 (fi) Foerbaettringar i en kalcineringsapparat.
FI871632A0 (fi) Heterocykliska karboxamider.
FI871158A0 (fi) Saekerhetsfilter foer filterkassetter i dammsugare.
FI874377A (fi) Trycksaenkningssystem foer saekerhetsbehaollaren i en kaernreaktor.
FI872276A0 (fi) Monteringsarrangemang foer inloppsventil i centralsugsystem.
FI872277A (fi) Abonnentanslutning i en telefonanlaeggning.
DE3750158D1 (de) Dünnschicht-Festkörperanordnung.
FI870932A0 (fi) Bestraolningsanordning foer solenergi i medicinskt bruk.
FI872247A (fi) Eldosa foer montering i kabelraenna.
FI861940A0 (fi) Stoedanordning foer nackstycket i en borrmaskin.
FI874227A (fi) Radiosaendare-mottagare i elektrisk transmissionsteknik.
FI861927A0 (fi) Laosmekanism foer styranordningen i en elbrytare.
FI864573A0 (fi) Anordning i granulerings-/ stycketorvsmaskin.
FI864571A0 (fi) Anordning i stycketorvs-/ granuleringsmaskin.
FI864089A0 (fi) Blaendskyddsgaller foer baerroer i belysningsanordning.
FI864088A0 (fi) Upphaengningsstycke foer baerroer i belysningsanordning.
FI863307A0 (fi) Elektronisk felstroem- och skyddskrets i en vaermekabel.
FI863210A0 (fi) I hoejdled reglerbar hylla.
FI862991A0 (fi) Skaerelement i graesklippningsmaskin.
FI862926A0 (fi) Faestunderlagsdel foer sjaelvhaeftande skylt i en pappersbanarulle foer automatiserade foerpackningslinjer foer tidningspapperrullar.
FI862410A0 (fi) Oevertrycksventil i en rekombinationsackumulator.
FI861925A0 (fi) Arrangemang foer en haolrotor i en barkningsmaskin.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee