DE3744099C1 - Bonding head - Google Patents

Bonding head

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Publication number
DE3744099C1
DE3744099C1 DE3744099A DE3744099A DE3744099C1 DE 3744099 C1 DE3744099 C1 DE 3744099C1 DE 3744099 A DE3744099 A DE 3744099A DE 3744099 A DE3744099 A DE 3744099A DE 3744099 C1 DE3744099 C1 DE 3744099C1
Authority
DE
Germany
Prior art keywords
bonding
bond
capillary
wire
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3744099A
Other languages
German (de)
Inventor
Helmut Greiner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
ANT Nachrichtentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ANT Nachrichtentechnik GmbH filed Critical ANT Nachrichtentechnik GmbH
Priority to DE3744099A priority Critical patent/DE3744099C1/en
Application granted granted Critical
Publication of DE3744099C1 publication Critical patent/DE3744099C1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20107—Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

In wire bonding, thermosonic bonding is becoming more and more significant. Previously, the binding quality achieved with this method was often not satisfactory. An improvement can be achieved by the bonding capillary (1) being fastened on a separate holding device (4). As a result, it is brought about that the heated bonding arm (2) is thermally disconnected from the bonding capillary (1), through which the bonding wire (3) is guided. Additionally, the bonding capillary (1) is flowed through by a gas, in order that the bonding wire (3) can more easily be pushed through the bonding capillary. Thermosonic bonding The bonding head makes possible the uniform bonding on of wire bows at high temperatures. <IMAGE>

Description

Die Erfindung betrifft einen Bondkopf gemäß dem Oberbegriff des Patentanspruchs 1.The invention relates to a bondhead according to the preamble of claim 1.

Thermosonic-Bonden ist eine Kombination aus Thermokompressions- und Ultraschall-Bonden. Es wird zum Verbinden von Bauelementanschlüssen mit dem Trägersubstrat mittels feiner Drähte eingesetzt. Das Bonden, beispielsweise von Golddrähten, wird bei diesem Verfahren bei Temperaturen um 250°C mit Hilfe von Ultraschall durchgeführt.Thermosonic bonding is a combination of Thermocompression and ultrasound bonding. It becomes Connection of component connections to the carrier substrate by means of fine wires. Bonding, for example of gold wires, is used in this process at temperatures around 250 ° C with the help of ultrasound.

Beim bisherigen Stand der Technik, wie beispielsweise bei dem auf dem Markt befindlichen Gerät West-Bond 4500 der Firma WELD-EQUIP (NL)/PHILIPS, wird der Bonddraht durch die Bondkapillare geführt, welche in den Bondarm eingelassen oder daran befestigt ist.In the prior art, such as in the West-Bond 4500 device on the market WELD-EQUIP (NL) / PHILIPS, the bond wire is through the bond capillary, which is embedded in the bond arm or attached to it.

Es hat sich gezeigt, daß beim Thermosonic-Bonden mit dieser Anordnung Drahtabreißfehler auftreten. Außerdem ist es nicht möglich, den Bonddraht zwischen zwei Bondstellen in einem gleichmäßigen kleinen Bogen zu führen.It has been shown that with thermosonic bonding with this Arrangement wire breakage errors occur. Besides, it is not possible to connect the bond wire between two bond points in one to lead evenly small arches.

Aus der DE-PS 35 37 551 ist eine Bondkapillare aus Keramik, Saphir oder Wolframkarbid bekannt. Die damit erzielte Bondqualität ist jedoch in vielen Fällen nicht ausreichend.
From DE-PS 35 37 551 a bond capillary made of ceramic, sapphire or tungsten carbide is known. In many cases, however, the bond quality achieved is not sufficient.

Ausgehend vom Oberbegriff des Patentanspruches 1 liegt der vorliegenden Erfindung die Aufgabe zugrunde, einen Bondkopf anzugeben, mit dem auch kleine Drahtbögen herstellbar sind und die Gefahr, daß Drahtabreißfehler auftreten, vermindert ist.Starting from the preamble of claim 1 present invention the task of a bondhead specify with which small wire arches can also be produced and reduces the risk of wire breakage errors is.

Die Aufgabe wird gelöst durch den Bondkopf mit den Merkmalen des Patentanspruchs 1.The task is solved by the bond head with the features of claim 1.

Eine vorteilhafte Weiterbildung ist im Unteranspruch 2 angegeben.An advantageous further development is in dependent claim 2 specified.

Der Erfindung liegen folgende Überlegungen zugrunde: Es konnte festgestellt werden, daß eine Ursache für Drahtabreißfehler und für die Probleme bei der Herstellung von kleinen Drahtbögen darin besteht, daß der Bonddraht, infolge seiner hohen Temperatur, nicht ungehindert durch die Bondkapillare geführt werden kann. Die Erhitzung des Bonddrahtes wird dadurch hervorgerufen, daß dieser durch den beheizten Bondarm geführt wird.The invention is based on the following considerations: It has been found that a cause for Wire breakage errors and for the problems in manufacturing of small wire arches is that the bond wire, due to its high temperature, not unhindered by the Bond capillary can be guided. The heating of the Bond wire is caused by the fact that this by the heated bond arm is guided.

Durch die Erfindung ist die gute thermische Entkopplung von Bondarm und Bondkapillare gewährleistet. Der Bonddraht wird aufgrund der Anordnung gemäß der Erfindung nicht erhitzt. Das Bonden bei hohen Temperaturen, bei dem eine hohe Haftfestigkeit erreicht wird, wird durch die Erfindung ermöglicht. Die Ausführung von Drahtbögen ist auch bei hohen Temperaturen gleichmäßig und es treten keine Abreißfehler mehr auf, da der Bonddraht nun ungehindert durch die Bondkapillare geführt werden kann. Zusätzlich zur thermischen Entkopplung kann der Bonddraht durch einen Gasfluß durch die Bondkapillare gekühlt werden. Außerdem hat der Gasfluß den Vorteil, daß der Bonddraht durch turbulente Strömungen in der Bondkapillare flattert und daher nicht an den Wänden der Kapillare haften kann. Es ist auch möglich, den Bonddraht allein durch Erhöhen des Gasdruckes durch die Bondkapillare zu fädeln.The good thermal decoupling of Bond arm and bond capillary guaranteed. The bond wire is not heated due to the arrangement according to the invention. Bonding at high temperatures, at a high Adhesive strength is achieved by the invention enables. The execution of wire arches is also high Temperatures are even and there are no tear-off errors more because the bond wire is now unhindered by the Bond capillary can be guided. In addition to The bond wire can be thermally decoupled by a Gas flow through the bond capillary are cooled. Also has the gas flow has the advantage that the bond wire is turbulent  Currents in the bond capillary flutter and therefore not on can adhere to the walls of the capillary. It is also possible, the bond wire only by increasing the gas pressure through the Thread the bond capillary.

Anhand der Figur wird ein Ausführungsbeispiel der Erfindung beschrieben.An embodiment of the invention is shown in the figure described.

Die Figur zeigt die Seitenansicht eines Bondkopfes.The figure shows the side view of a bondhead.

Zum Thermosonic-Bonden ist ein beheizter Bondarm 2 vorgesehen. Ein Bonddraht 3 wird durch die Bondkapillare 1 zur Bondstelle geführt und mit einem zu bondenden Schaltungsteil 7, 8 in Berührung gebracht. Mit einer Bondspitze 6 wird der Bonddraht 3 durch Ultraschalleinwirkung am Schaltungsteil befestigt. Eine Halteeinrichtung 4 ist vom Bondarm 2 thermisch entkoppelt. Sie kann beispielsweise am Gehäuse des Bondgerätes befestigt sein. Die Halteeinrichtung 4 hält die Bondkapillare 1. Diese ist durch eine Bohrung in der Halteeinrichtung 4 geführt und mit Klebstoff befestigt. Eine Gasleitung 5 ist an der Bondkapillare 1 derart befestigt, daß sie den Bonddraht 3 nicht behindert. Als Gasleitung 5 eignet sich ein dünner Plastikschlauch. Durch die Gasleitung 5 wird Gas zum Durchspülen der Bondkapillare 1 zugeführt. Das Gas wird aus einem Gasreservoir über ein Drosselventil zur Bondkapillare 1 geleitet. Stickstoff ist ein mögliches Gas, das sich zu diesem Zweck eignet.A heated bonding arm 2 is provided for thermosonic bonding. A bond wire 3 is guided through the bond capillary 1 to the bond point and brought into contact with a circuit part 7, 8 to be bonded. With a bonding tip 6 , the bonding wire 3 is attached to the circuit part by the action of ultrasound. A holding device 4 is thermally decoupled from the bond arm 2 . For example, it can be attached to the housing of the bonding device. The holding device 4 holds the bond capillary 1 . This is guided through a hole in the holding device 4 and fastened with adhesive. A gas line 5 is attached to the bond capillary 1 in such a way that it does not hinder the bond wire 3 . A thin plastic tube is suitable as gas line 5 . Gas for flushing the bond capillary 1 is supplied through the gas line 5 . The gas is conducted from a gas reservoir via a throttle valve to the bond capillary 1 . Nitrogen is a possible gas that can be used for this purpose.

Claims (2)

1. Bondkopf zum Thermosonic-Bonden, der einen Bondarm (2) und eine Bondkapillare (1) aufweist, dadurch gekennzeichnet, daß die Bondkapillare (1) an einer separaten Halteeinrichtung (4) derart befestigt ist, daß sie vom Bondarm (2) thermisch entkoppelt ist.1. Bonding head for thermosonic bonding, which has a bond arm ( 2 ) and a bond capillary ( 1 ), characterized in that the bond capillary ( 1 ) is attached to a separate holding device ( 4 ) in such a way that it is thermally separated from the bond arm ( 2 ) is decoupled. 2. Bondkopf nach Anspruch 1, dadurch gekennzeichnet, daß eine Gasleitung (5) an der Bondkapillare (1) befestigt ist zum Durchspülen der Bondkapillare (1) mit Gas.2. Bonding head according to claim 1, characterized in that a gas line ( 5 ) on the bond capillary ( 1 ) is fixed for flushing the bond capillary ( 1 ) with gas.
DE3744099A 1987-12-24 1987-12-24 Bonding head Expired DE3744099C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE3744099A DE3744099C1 (en) 1987-12-24 1987-12-24 Bonding head

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Application Number Priority Date Filing Date Title
DE3744099A DE3744099C1 (en) 1987-12-24 1987-12-24 Bonding head

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DE3744099C1 true DE3744099C1 (en) 1989-02-23

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0792517A1 (en) * 1994-11-15 1997-09-03 Formfactor, Inc. Electrical contact structures from flexible wire
US7225538B2 (en) 1993-11-16 2007-06-05 Formfactor, Inc. Resilient contact structures formed and then attached to a substrate
US8485418B2 (en) 1995-05-26 2013-07-16 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3537551C2 (en) * 1985-10-22 1987-07-16 Delvotec S.A., Les Brenets, Ch

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3537551C2 (en) * 1985-10-22 1987-07-16 Delvotec S.A., Les Brenets, Ch

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7225538B2 (en) 1993-11-16 2007-06-05 Formfactor, Inc. Resilient contact structures formed and then attached to a substrate
EP0792517A1 (en) * 1994-11-15 1997-09-03 Formfactor, Inc. Electrical contact structures from flexible wire
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US8485418B2 (en) 1995-05-26 2013-07-16 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out

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