DE3683807D1 - DIELECTRIC THICK LAYERS. - Google Patents

DIELECTRIC THICK LAYERS.

Info

Publication number
DE3683807D1
DE3683807D1 DE8686305403T DE3683807T DE3683807D1 DE 3683807 D1 DE3683807 D1 DE 3683807D1 DE 8686305403 T DE8686305403 T DE 8686305403T DE 3683807 T DE3683807 T DE 3683807T DE 3683807 D1 DE3683807 D1 DE 3683807D1
Authority
DE
Germany
Prior art keywords
thick layers
dielectric thick
dielectric
layers
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686305403T
Other languages
German (de)
Inventor
Masaki Saito
Toshio Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE3683807D1 publication Critical patent/DE3683807D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/085—Vapour deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Formation Of Insulating Films (AREA)
DE8686305403T 1985-07-16 1986-07-14 DIELECTRIC THICK LAYERS. Expired - Lifetime DE3683807D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60156519A JPH0627328B2 (en) 1985-07-16 1985-07-16 High dielectric constant thin film

Publications (1)

Publication Number Publication Date
DE3683807D1 true DE3683807D1 (en) 1992-03-19

Family

ID=15629556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686305403T Expired - Lifetime DE3683807D1 (en) 1985-07-16 1986-07-14 DIELECTRIC THICK LAYERS.

Country Status (4)

Country Link
US (1) US4734340A (en)
EP (1) EP0210033B1 (en)
JP (1) JPH0627328B2 (en)
DE (1) DE3683807D1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2911186B2 (en) * 1989-07-10 1999-06-23 科学技術振興事業団 Composite oxide thin film
JP3047256B2 (en) * 1991-06-13 2000-05-29 株式会社豊田中央研究所 Dielectric thin film
KR930012120B1 (en) * 1991-07-03 1993-12-24 삼성전자 주식회사 Semicondcutor device and fabricating method thereof
US5569619A (en) * 1992-06-24 1996-10-29 Lg Semicon Co., Ltd. Method for forming a capacitor of a semiconductor memory cell
KR960004462B1 (en) * 1992-08-07 1996-04-06 삼성전자주식회사 Process for producing memory capacitor in semiconductor device
US5587870A (en) * 1992-09-17 1996-12-24 Research Foundation Of State University Of New York Nanocrystalline layer thin film capacitors
US5390072A (en) * 1992-09-17 1995-02-14 Research Foundation Of State University Of New York Thin film capacitors
DE69624042T2 (en) * 1995-06-16 2003-06-05 At & T Corp TiO2-doped, Ta2O5-containing dielectric material and components containing it
US6218300B1 (en) * 1998-06-12 2001-04-17 Applied Materials, Inc. Method and apparatus for forming a titanium doped tantalum pentaoxide dielectric layer using CVD
US6727148B1 (en) 1998-06-30 2004-04-27 Lam Research Corporation ULSI MOS with high dielectric constant gate insulator
KR100282487B1 (en) 1998-10-19 2001-02-15 윤종용 Cell Capacitor Using High-Dielectric Multilayer Film and Its Manufacturing Method
US6583057B1 (en) * 1998-12-14 2003-06-24 Motorola, Inc. Method of forming a semiconductor device having a layer deposited by varying flow of reactants
US6221712B1 (en) * 1999-08-30 2001-04-24 United Microelectronics Corp. Method for fabricating gate oxide layer
KR100705926B1 (en) * 1999-12-22 2007-04-11 주식회사 하이닉스반도체 Method of manufacturing a capacitor in a semiconductor device
KR100494322B1 (en) * 1999-12-22 2005-06-10 주식회사 하이닉스반도체 Method of manufacturing a capacitor in a semiconductor device
US20070158178A1 (en) * 2002-07-23 2007-07-12 Tosoh Smd, Inc. Method and apparatus for deposition of low-k dielectric materials
US20050070126A1 (en) * 2003-04-21 2005-03-31 Yoshihide Senzaki System and method for forming multi-component dielectric films
US20080087866A1 (en) * 2006-10-13 2008-04-17 H.C. Stark Inc. Titanium oxide-based sputtering target for transparent conductive film, method for producing such film and composition for use therein

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899345A (en) * 1959-08-11 Method of making titanium dioxide capacitors
US2960642A (en) * 1958-04-17 1960-11-15 Quartz & Silice S A Dielectric films and capacitors employing the same
US3320500A (en) * 1965-12-27 1967-05-16 Bell Telephone Labor Inc Tantalum alloy capacitor
JPS59102201A (en) * 1982-12-06 1984-06-13 Nippon Soda Co Ltd Multilayered film having high durability and its production

Also Published As

Publication number Publication date
US4734340A (en) 1988-03-29
JPH0627328B2 (en) 1994-04-13
EP0210033A1 (en) 1987-01-28
EP0210033B1 (en) 1992-02-05
JPS6217177A (en) 1987-01-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee