DE3668194D1 - Doppeltiegel zum ziehen von einkristallen. - Google Patents

Doppeltiegel zum ziehen von einkristallen.

Info

Publication number
DE3668194D1
DE3668194D1 DE8686303816T DE3668194T DE3668194D1 DE 3668194 D1 DE3668194 D1 DE 3668194D1 DE 8686303816 T DE8686303816 T DE 8686303816T DE 3668194 T DE3668194 T DE 3668194T DE 3668194 D1 DE3668194 D1 DE 3668194D1
Authority
DE
Germany
Prior art keywords
double rod
pulling crystals
crystals
pulling
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686303816T
Other languages
English (en)
Inventor
Ryusuke Osaka Works Nakai
Kohji Osaka Works Tada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3668194D1 publication Critical patent/DE3668194D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8686303816T 1985-05-21 1986-05-20 Doppeltiegel zum ziehen von einkristallen. Expired - Fee Related DE3668194D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10878885A JPS61266389A (ja) 1985-05-21 1985-05-21 結晶内不純物均一化用二重るつぼ

Publications (1)

Publication Number Publication Date
DE3668194D1 true DE3668194D1 (de) 1990-02-15

Family

ID=14493493

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686303816T Expired - Fee Related DE3668194D1 (de) 1985-05-21 1986-05-20 Doppeltiegel zum ziehen von einkristallen.

Country Status (4)

Country Link
EP (1) EP0206514B1 (de)
JP (1) JPS61266389A (de)
CA (1) CA1272106A (de)
DE (1) DE3668194D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2709644B2 (ja) * 1990-04-25 1998-02-04 東芝セラミックス 株式会社 シリコン単結晶製造用石英るつぼの製造方法
US5047112A (en) * 1990-08-14 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Method for preparing homogeneous single crystal ternary III-V alloys
IL128827A0 (en) * 1999-03-04 2000-01-31 Solmecs Israel Ltd Apparatus for growing single crystals
JP5257959B2 (ja) * 2009-04-24 2013-08-07 独立行政法人産業技術総合研究所 窒化アルミニウム単結晶の製造装置、窒化アルミニウム単結晶の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2944875A (en) * 1953-07-13 1960-07-12 Raytheon Co Crystal-growing apparatus and methods
US3671203A (en) * 1968-05-29 1972-06-20 Hughes Aircraft Co Method and apparatus for czochralski growth of large crystals
BE794122A (fr) * 1972-01-18 1973-07-16 Philips Nv Werkwijze voor het vervaardigen van eenkristallijne halfgeleiderlichamen en halfgeleiderinrichtingen, in het bijzonder stralingsdetectoren die dergelijke eenkristallijne halfgeleiderlichamen

Also Published As

Publication number Publication date
JPS61266389A (ja) 1986-11-26
EP0206514B1 (de) 1990-01-10
EP0206514A1 (de) 1986-12-30
CA1272106A (en) 1990-07-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee