DE3514094A1 - MANUFACTURE OF METALLIC STRUCTURES ON INORGANIC NON-CONDUCTORS - Google Patents

Description

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The invention has the task of metallic structures on inorganic, non-conductive surfaces with physical methods, i.e. without the use of aqueous etching and activation solutions. It is It is a special feature of the invention that the structures that one wants to obtain, in positive printing or as a positive image on the substrate surface can be applied. It is therefore a fundamentally different process than known methods in which the surface parts that a metal coating should not be covered, i.e. the substrate is provided with a negative mask.

With the help of the invention there are new ways of producing printed Circuits, especially fine wire circuits and multilayer circuits in electronics, but also structures, ornaments, etc. for decorative purposes.

The implementation of the invention takes place in the following steps:

1) Covering the substrate with a masking mask, with photoresists or with Screen printing varnishes in the positive process.

2) Introduction into a glow discharge zone under the action of reactive halogen-containing gases.

3) Remove the masking mask or the masking varnish.

4) Metallization of the substrate using conventional methods such as vapor deposition, Cathode atomization (sputtering), plasma metallization.

5) "developing" the desired structures by dipping the substrate

in water or aqueous solutions of metal complexing agents or inorganic and / or organic compounds.
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During the action of halogen-containing gases in the plasma arise on reactive halogen compounds on the uncovered areas of the substrate. Surprisingly, they form during the subsequent physical metal coating soluble metal halides, which can be removed by simple immersion processes, so that the metallization is only preserved at the points remains that were covered during the plasma treatment.

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Postal address: Schering Aktiengesellschaft Postfach 65 0311, D-1000 Berlin 85 · ^s jr Besserer Ber p-, Vec2-g. VUerEtrafle Γ0-Τ3 T & egramrre Scienrsjineme 5 «ri

j - D. ¹ Heroen Asm: s. Dr Or s: an 3r ^ rn. Dr f-enz Hannse. Horst Kramo Dr Klaus Pome. Dr nors: Λ 'ze: Chairman'"esAu'sicRtsratsrat rians-j - '^ en Hamann

* S: z aer Geseiiscnaf! Bernn and EergKarren Harce'Sregisier: AG ChariottenEL'-j 33 HRB 233 una A3 Ka ~ e ^ HF3 0061 Be -er CommerzDap * AG 3er n. Koi! C-Mr

'037D0600. 3ariKie>! Zani 1C04C0C0 5er ¹ ner nanaes- una Frankfurter Sann. Be 'α Komo-Nr 700-15224 Bar.Kiatrani' 00202C3 Deutsche BanK Benin AG. Kcr-o-.V

Schering Aktiengesellschaft Intellectual property rights

30th

: i. ■ · ■:. '· SCHERING

A. 3 51 /, Q 9 /,

The reactive halogen compounds that develop during plasma treatment are remarkably stable - they are not removed, for example by applying a vacuum during subsequent steaming, and are still fully effective even after storage for days, so that a safe workflow in the production of structures according to the invention Procedure is guaranteed.

The structures obtained with the method according to the invention can be used with known methods are reinforced, preferably by a subsequent chemical copper plating or chemical nickel plating in baths for autocatalytic Metal deposition.

As substrates on which the metallic structures are to be produced, ¹ ^ all customary inorganic non-conductors come into question, in particular aluminum oxide ceramics, silicon oxide ceramics and glass, but also metals with oxide layers, such as aluminum.

The most suitable halogen-containing gases are boron trichloride, "silicon - tetrachloride, boron trifluoride and carbon tetrachloride.

the following examples illustrate the invention:

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Postal address: Schering Aktiengesellschaft, Postfach 650311, D-1000 Berlin 65 · rjr Besucrer 3e ' -.'. Ecir ;. ν -. e'sraiJe! 70-173 telegrams. Scheringr-e-nie Be 'η

Board of Directors: Dr. Heroes Asmis. Dr. Christian Brunn. Dr. Heinz Hannse. Horst Kramp. Dr. Klaus Fore. Dr. -es: .Vzs. vc-s.:z9nder ces Supervisory Board Hans-Ju '^ sn Harnann Registered office of the company: Benin and Sergkamen Commercial register: AG Gharic "er> Eurg 93 HBB 282 jnd A3 ^" β ". NR3 CCSI Beniner Commerzoanx AG. Ber n, account no 108700600. BanKleitzani 10040000 Berliner Handeis- and Frankfurter Bar.K. 3β '·· η. Account-V 7004522- Bar-xeizarv '3020200 Deutscne BanK Benin A3. Account-f-ir 2415008, bank card '00 700 00 Postscheckamt Serlm West. Konlo-Nr. 1175-101. Barweuah! "00100" C

Schering Aktiengesellschaft Intellectual property rights

SCHERING 3 5 ι /, Q 9 /,

EXAMPLE 1

Fabrication of structures on aluminum oxide ceramic by vapor deposition with

gold
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The desired conductor track pattern is applied to ceramic platelets measuring 50 × 50 × 2 mm by means of a screen printing varnish using other conventional methods.
The platelets are exposed to plasma in a plasma reactor

exposed to the following conditions:
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Electrode temperature ^{150 0 C}

Frequency 13.56 MHz

Power density 1.6 watt / cm ²

Pressure in the reactor 0.5 hPa

* 5 Reaction gas boron trichloride

Carrier gas argon

Exposure time in the plasma 90 minutes

After the end of the plasma exposure, the ceramic platelets are removed from the Reactor removed, the screen printing varnish on them is removed by dipping in suitable organic solvents.

The platelets are now in a commercially available device for vacuum deposition vaporized with gold. In the areas that were not previously covered with varnish, i.e. exposed to the plasma, the gold is transformed into a water-soluble one Connection transferred. After steaming, the platelets are immersed in water, which dissolves the gold compound and creates the desired structures remain as a gold film on the surface.

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35

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Ϊ Postal address: Schering Aktiengesellschaft Postfach 65 0311. 0-1000 Berlin 65 · For visitors-Befün-vVedang. Muiiefstrafle! 70-178 ^τ β'5ς'3- "τβ Scr ^ ngcremie 5er · η

Board member - Dr rieroerr Asmis. Dr Chr-s ^r to Brunn. Dr Hsmz Hannse Horst Kramp. Dr. Klaus Pohle. Or Horst W>"ei Chairman of his Auis.cr'srats Hans-Jürgen Harrar.n

, Seat 3er Gese.iscna ": 3er'm jr.ü got Hanae! Sreg: ster. AG Chartottendurg 93 HRB 283 and AG Kamen HRB 0061 Ber: ner Commerzcann AG Benin. Konio-'jr

1087C0600. SanKieiizarM '00 40000 cen-rer Hameis- and FranKfurter Bank. Berlin. Account no. 70045224 Banxietlzani 10020200 Deu: scre 3βπκ Benin AG. Kor.rc- \ r

24'50C8. BanKleitzari: 00 700 '30 PostscrecKamt Berlin West. Kon! O-Nr 1175-'O1. Bank code 10010010

Schering Aktiengesellschaft "'■.;; ** ,,;: I,

Intellectual Property _ .*.*..' *,,

SCHERING 3 51 Λ. 0 9 Λ—

EXAMPLE 2

Manufacture of structures on silicon oxide ceramics by vapor deposition with copper

Silica ceramic wafers measuring 80χ 40 χ 3 mm are used

covered with masks of the desired structures and a plasma exposure exposed under the same conditions as in Example 1. The platelets are then removed from the reactor and the masks are removed. 10

The surfaces are covered in a known manner by cathode sputtering Copper coated.

After that, the platelets are placed in a 5% solution of ammonia in water submerged. The copper layer is removed from the areas that were previously exposed to the plasma. They stay on the platelets through the Masks given back structures.

You can then, if desired, in a chemical copper bath _ be strengthened; there is no additional activation, for example through Immersion in solutions containing precious metals is required.

One arrives at the same results if one uses the platelets instead of copper coated with silver. Here, too, the silver is removed as a complex compound in the subsequent ^ 3 immersion in ammonia solution at the points which were not covered during plasma exposure.

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Postal address: Schenng Aktiengesellschaft, Postfach 65 0311. D-ICKX) Berlin 65 ■ -s Ses "ce- 3er ~ -t.xz-z '.' .. ä'vale 170-178 Teif?; - a ~~ i Sc -erngc ^ eme Ser -i

Vorsiana 3r. rierce'- -sxs. Dr Cr-si'an Brunn Z-neirz -a-ise ^ crst Kramp. Dr -caus ³ c-; e -r ~ zs; Μ · ζί: ζ '% : z5 "uer des Aulsic-3-a ^- ä -as-Jurgen Har-ann Sitz eier Geseiiscna'T 5e-in unc Be ^ gxamsn Hanoeisre'; s: er AG Cnanottenuurg 93 -iRS 223 _ra Aj Or "e- - = B XS '3enmer Comrrer; r3"<-G.3eri'n.Kon'c-'ir! 0373Q6G0 BankleiTza- .; ΙΟΟΊΟΟΟΟ Ben.ner Haraels- -ra P'anK ^ rter BanK . Berw <cr! O - ". R" G045Z2- Sa-'e-; a- '^ 023200 DeuKC-e 3a- <se'in AG. Kon'o-Nr 2415008. 3 amce:tza-. '30 Γ00 00 ^a ostscneckam äen-.n Wesr Korto-Nr 1175-101.Sarv e:!; 3- '00 '00 Ό

Claims (1)

PATENT CLAIMS 1. Process for the production of metallic structures on inorganic, non-conductive surfaces, characterized in that - the desired ones with the help of masks, varnishes or other covering materials Structures are created on the surface, IO the objects treated in this way in a glow discharge zone of action are exposed to reactive gases containing halogens, - after the end of the exposure, the covering material is removed, - the objects are metallized using known physical methods, 15th - the objects after this metallization to produce the desired Structures in water or aqueous solutions of complexing agents, acids, alkalis or substances that form the metal halide compound solve, be brought. 20th 1. The method according to claim 1, characterized in that boron trichloride, silicon tetrachloride, ■ boron trifluoride or carbon tetrachloride is used as the halogen-containing gas. 3. The method according to claim 1, characterized in that the metallization of the objects by vapor deposition, cathode sputtering or plasma metal deposition he follows. 4. Process according to Claims 1 to 3, characterized in that the metallic Structures by treatment in chemical (autocatalytic) baths be reinforced for metal deposition. 30th 5. The method according to claims 1 and 4, characterized in that the production of the structures after physical metallization is done directly by immersion in the chemical bath for metal deposition. 35 Postal address: Schering Aktiengesellschaft, Postfach 650311, D-1000 Berlin 65 · Rr Besserer Benir-.Veaa-5 ML "e" 5 "aäe i7C-'78 Te'e ^ rarnme: Scnenngcreme 5e 'η - Vcs: anü "Or Hercert Asmis. Dr. Christen Brunn. Dr Heinz Hannse. Horst Kramo Dr K.aus Pcnle. Dr. Hors! Λ:; s · Vs'S-izenaer 2nd Au! S; cr-srats Hans-Jurgen Harr .a — 1 Headquarters let Geseilscnatt: Berlin and got Hanceisregisier: AG Chariottenourg 93 HRB 283 and AG Karnei nR3 0051 Berliner Cof.-erznanK AG. Berlin account " u '.C3700600. Bankieitzanl 100 400 (X) Benin Hanaeis and Frankfurter Banx. Benin. <orao no. 70045224 Sa'-Kieican; '0020200 Deurscne Ban' Berlin AG. Account no 24-50CS. Bankieitzanl 100 700 00 Postscneckant Berlin West. Komo-.Nr η 75-101. BanKieu at 10010010