DE3512094C2 - - Google Patents

Info

Publication number
DE3512094C2
DE3512094C2 DE19853512094 DE3512094A DE3512094C2 DE 3512094 C2 DE3512094 C2 DE 3512094C2 DE 19853512094 DE19853512094 DE 19853512094 DE 3512094 A DE3512094 A DE 3512094A DE 3512094 C2 DE3512094 C2 DE 3512094C2
Authority
DE
Germany
Prior art keywords
switch
transformer
circuit
voltage
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19853512094
Other languages
German (de)
English (en)
Other versions
DE3512094A1 (de
Inventor
Guenter Dipl.-Ing. 1000 Berlin De Junge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19853512094 priority Critical patent/DE3512094A1/de
Publication of DE3512094A1 publication Critical patent/DE3512094A1/de
Application granted granted Critical
Publication of DE3512094C2 publication Critical patent/DE3512094C2/de
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/732Measures for enabling turn-off
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
DE19853512094 1985-03-29 1985-03-29 Ansteuerschaltung fuer einen abschaltbaren leistungshalbleiter Granted DE3512094A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19853512094 DE3512094A1 (de) 1985-03-29 1985-03-29 Ansteuerschaltung fuer einen abschaltbaren leistungshalbleiter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853512094 DE3512094A1 (de) 1985-03-29 1985-03-29 Ansteuerschaltung fuer einen abschaltbaren leistungshalbleiter

Publications (2)

Publication Number Publication Date
DE3512094A1 DE3512094A1 (de) 1986-10-02
DE3512094C2 true DE3512094C2 (enrdf_load_html_response) 1988-05-05

Family

ID=6267140

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853512094 Granted DE3512094A1 (de) 1985-03-29 1985-03-29 Ansteuerschaltung fuer einen abschaltbaren leistungshalbleiter

Country Status (1)

Country Link
DE (1) DE3512094A1 (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104202036B (zh) * 2014-08-15 2017-07-18 广东易事特电源股份有限公司 无损的晶闸管驱动电路

Also Published As

Publication number Publication date
DE3512094A1 (de) 1986-10-02

Similar Documents

Publication Publication Date Title
DE69722625T2 (de) Eintakt-durchflussumrichter für gleichstrom-gleichstrom-umwandlung mit verbesserter rücksetzung für synchrongleichrichtung
DE3685565T2 (de) In einer leistungsschaltversorgung benutzter durchflusswandler.
EP0382110B1 (de) Ausgangssteuerkreis für Inverter sowie Hochfrequenz-Stromquelle zur Gleichstromversorgung einer Schweissstation
DE3007597A1 (de) Schutzbeschaltung fuer halbleiterschalter
EP0756782B2 (de) Gleichstrom-steuerschaltung
DE2050219C3 (de) Einrichtung zur Steuerung eines Elektromagneten
DE2809439A1 (de) Schaltungseinrichtung zur steuerung des basisstromes eines als schalttransistor betriebenen leistungstransistors
EP0246491A2 (de) DC/DC-Eintaktdurchflusswandler
DE3931729C1 (enrdf_load_html_response)
DE3512094C2 (enrdf_load_html_response)
EP0464246B1 (de) Schaltungsanordnung für ein freischwingendes Sperrwandler-Schaltnetzteil
EP0270920B1 (de) Verfahren und Vorrichtung zur Erzeugung von Sende-Stromsignalen in einem Wechselstromverteilungsnetz
DE3714175C2 (enrdf_load_html_response)
DE3611297C2 (enrdf_load_html_response)
DE3446344C2 (enrdf_load_html_response)
DE69714753T2 (de) Aktive gleichrichterschaltung
EP0941550B1 (de) Elektromagnet für magnetventil
DE3316281C2 (de) Schaltnetzteil zur Gleichspannungswandlung
EP0157729B1 (de) Gleichspannungswandler
EP0515988B1 (de) Eintakt-Durchflussumrichter mit einem Transformator und mit einer Schutzschaltung für einen elektronischen Schalter
DE10331866B4 (de) Einrichtung zur Steuerung einer Spulenanordnung mit elektrisch variierbarer Induktivität, sowie Schaltnetzteil
DE3435194C2 (enrdf_load_html_response)
DE3049020C2 (de) Regelbarer Gleichspannungswandler für Leistungsschaltnetzteile
DE3517467A1 (de) Schaltungsanordnung fuer den abschaltsteuerkreis eines gto-thyristors
CH653828A5 (en) Pulse transmission circuit for transmission of electrical pulses with potential separation

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licenses declared (paragraph 23)
8339 Ceased/non-payment of the annual fee