DE3481786D1 - Negativer elektronenlack fuer trockenentwicklung. - Google Patents
Negativer elektronenlack fuer trockenentwicklung.Info
- Publication number
- DE3481786D1 DE3481786D1 DE8484112183T DE3481786T DE3481786D1 DE 3481786 D1 DE3481786 D1 DE 3481786D1 DE 8484112183 T DE8484112183 T DE 8484112183T DE 3481786 T DE3481786 T DE 3481786T DE 3481786 D1 DE3481786 D1 DE 3481786D1
- Authority
- DE
- Germany
- Prior art keywords
- dry development
- electronic paint
- negative electronic
- negative
- paint
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/545,032 US4497891A (en) | 1983-10-25 | 1983-10-25 | Dry-developed, negative working electron resist system |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3481786D1 true DE3481786D1 (de) | 1990-05-03 |
Family
ID=24174607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484112183T Expired - Fee Related DE3481786D1 (de) | 1983-10-25 | 1984-10-11 | Negativer elektronenlack fuer trockenentwicklung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4497891A (de) |
EP (1) | EP0141311B1 (de) |
JP (1) | JPS60102735A (de) |
DE (1) | DE3481786D1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60114575A (ja) * | 1983-11-28 | 1985-06-21 | Tokyo Ohka Kogyo Co Ltd | 乾式パタ−ン形成方法 |
US4988284A (en) * | 1986-10-08 | 1991-01-29 | Hewlett-Packard Company | Method for compensating for the E-beam proximity effect |
US5981143A (en) * | 1997-11-26 | 1999-11-09 | Trw Inc. | Chemically treated photoresist for withstanding ion bombarded processing |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2726813C2 (de) * | 1976-06-17 | 1984-02-23 | Motorola, Inc., 60196 Schaumburg, Ill. | Verfahren zur Herstellung eines mit einem Muster versehenen Substrats |
US4267257A (en) * | 1976-07-30 | 1981-05-12 | Rca Corporation | Method for forming a shallow surface relief pattern in a poly(olefin sulfone) layer |
US4289845A (en) * | 1978-05-22 | 1981-09-15 | Bell Telephone Laboratories, Inc. | Fabrication based on radiation sensitive resists and related products |
US4241165A (en) * | 1978-09-05 | 1980-12-23 | Motorola, Inc. | Plasma development process for photoresist |
US4307178A (en) * | 1980-04-30 | 1981-12-22 | International Business Machines Corporation | Plasma develoment of resists |
JPS5746241A (en) * | 1980-09-04 | 1982-03-16 | Mitsubishi Electric Corp | Reversal dry developing method |
US4476216A (en) * | 1981-08-03 | 1984-10-09 | Amdahl Corporation | Method for high resolution lithography |
JPS5852638A (ja) * | 1981-09-24 | 1983-03-28 | Hitachi Ltd | 放射線感応性組成物 |
US4398001A (en) * | 1982-03-22 | 1983-08-09 | International Business Machines Corporation | Terpolymer resist compositions |
-
1983
- 1983-10-25 US US06/545,032 patent/US4497891A/en not_active Expired - Fee Related
-
1984
- 1984-05-16 JP JP59096709A patent/JPS60102735A/ja active Granted
- 1984-10-11 EP EP84112183A patent/EP0141311B1/de not_active Expired
- 1984-10-11 DE DE8484112183T patent/DE3481786D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4497891A (en) | 1985-02-05 |
EP0141311B1 (de) | 1990-03-28 |
JPH0337295B2 (de) | 1991-06-05 |
JPS60102735A (ja) | 1985-06-06 |
EP0141311A3 (en) | 1987-06-16 |
EP0141311A2 (de) | 1985-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |