DE3477446D1 - Device for the electrolytic deposition of a conductive material on integrated-circuit wafers - Google Patents

Device for the electrolytic deposition of a conductive material on integrated-circuit wafers

Info

Publication number
DE3477446D1
DE3477446D1 DE8484113282T DE3477446T DE3477446D1 DE 3477446 D1 DE3477446 D1 DE 3477446D1 DE 8484113282 T DE8484113282 T DE 8484113282T DE 3477446 T DE3477446 T DE 3477446T DE 3477446 D1 DE3477446 D1 DE 3477446D1
Authority
DE
Germany
Prior art keywords
integrated
conductive material
electrolytic deposition
circuit wafers
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484113282T
Other languages
English (en)
Inventor
Michel Jeannot
Italo Salvalai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EM Microelectronic Marin SA
Original Assignee
EM Microelectronic Marin SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CH6430/83A external-priority patent/CH659259A5/fr
Priority claimed from FR8320813A external-priority patent/FR2557365B1/fr
Application filed by EM Microelectronic Marin SA filed Critical EM Microelectronic Marin SA
Application granted granted Critical
Publication of DE3477446D1 publication Critical patent/DE3477446D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Combinations Of Printed Boards (AREA)
  • Electroplating Methods And Accessories (AREA)
DE8484113282T 1983-12-01 1984-11-05 Device for the electrolytic deposition of a conductive material on integrated-circuit wafers Expired DE3477446D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH6430/83A CH659259A5 (fr) 1983-12-01 1983-12-01 Dispositif pour le depot electrolytique d'un materiau conducteur sur des plaques de circuits integres.
FR8320813A FR2557365B1 (fr) 1983-12-23 1983-12-23 Dispositif pour le depot electrolytique d'un materiau conducteur sur des plaques de circuits integres

Publications (1)

Publication Number Publication Date
DE3477446D1 true DE3477446D1 (en) 1989-04-27

Family

ID=25699564

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484113282T Expired DE3477446D1 (en) 1983-12-01 1984-11-05 Device for the electrolytic deposition of a conductive material on integrated-circuit wafers

Country Status (2)

Country Link
EP (1) EP0144752B1 (de)
DE (1) DE3477446D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283681B1 (de) * 1987-02-23 1992-05-06 Siemens Aktiengesellschaft Galvanisiereinrichtung zur Erzeugung von Höckern auf Chip-Bauelementen
FR2773262B1 (fr) * 1997-12-30 2000-03-10 Sgs Thomson Microelectronics Procede de formation d'elements conducteurs dans un circuit integre

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3306602A (en) * 1964-08-11 1967-02-28 Bendix Corp Work holder fixture
US3347771A (en) * 1965-01-25 1967-10-17 Bendix Corp Lead-tin alloy plating fixture for silicon
DE1255433B (de) * 1965-09-25 1967-11-30 Siemens Ag Verfahren zum elektrolytischen Abscheiden wenigstens einer loetfaehigen Schicht auf einen nicht loetbaren, poroesen Halbleiterkoerper
DE2340423A1 (de) * 1973-08-09 1975-02-20 Siemens Ag Weichgeloetete kontaktanordnung

Also Published As

Publication number Publication date
EP0144752A1 (de) 1985-06-19
EP0144752B1 (de) 1989-03-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee