DE3472863D1 - Millimeter wave high-power limiter using p-i-n diodes, and method of making these diodes - Google Patents

Millimeter wave high-power limiter using p-i-n diodes, and method of making these diodes

Info

Publication number
DE3472863D1
DE3472863D1 DE8484402018T DE3472863T DE3472863D1 DE 3472863 D1 DE3472863 D1 DE 3472863D1 DE 8484402018 T DE8484402018 T DE 8484402018T DE 3472863 T DE3472863 T DE 3472863T DE 3472863 D1 DE3472863 D1 DE 3472863D1
Authority
DE
Germany
Prior art keywords
diodes
making
millimeter wave
wave high
power limiter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484402018T
Other languages
English (en)
Inventor
Raymond Henry
Michel Heitzmann
Jean-Victor Bouvet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3472863D1 publication Critical patent/DE3472863D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
    • H03G11/02—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general by means of diodes
    • H03G11/025—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general by means of diodes in circuits having distributed constants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
DE8484402018T 1983-10-14 1984-10-08 Millimeter wave high-power limiter using p-i-n diodes, and method of making these diodes Expired DE3472863D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8316388A FR2553583B1 (fr) 1983-10-14 1983-10-14 Limiteur de puissance elevee a diodes pin pour ondes millimetriques et procede de realisation des diodes

Publications (1)

Publication Number Publication Date
DE3472863D1 true DE3472863D1 (en) 1988-08-25

Family

ID=9293150

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484402018T Expired DE3472863D1 (en) 1983-10-14 1984-10-08 Millimeter wave high-power limiter using p-i-n diodes, and method of making these diodes

Country Status (4)

Country Link
US (1) US4571559A (de)
EP (1) EP0140772B1 (de)
DE (1) DE3472863D1 (de)
FR (1) FR2553583B1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581250A (en) * 1984-09-13 1986-04-08 M/A-Com, Inc. Microwave component mounting
US4754243A (en) * 1984-09-13 1988-06-28 M/A-Com, Inc. Microwave component mounting
US4738933A (en) * 1985-08-27 1988-04-19 Fei Microwave, Inc. Monolithic PIN diode and method for its manufacture
FR2604286B1 (fr) * 1986-09-18 1988-11-10 Mayer Ferdy Structures a propagation d'onde pour la suppression de surtensions et l'absorption de transitoires
US5047829A (en) * 1986-10-30 1991-09-10 Texas Instruments Incorporated Monolithic p-i-n diode limiter
US4810980A (en) * 1987-06-04 1989-03-07 Texas Instruments, Inc. Matched variable attenuation switched limiter
FR2632776A1 (fr) * 1988-06-10 1989-12-15 Thomson Hybrides Microondes Diode hyperfrequences de type pin et son procede de fabrication
US5157538A (en) * 1990-06-29 1992-10-20 The United States Of America As Represented By The Secretary Of The Air Force Silicon spatial light modulator
US5218327A (en) * 1991-03-27 1993-06-08 Hughes Aircraft Company Variable/switchable coupler
FR2758888B1 (fr) * 1997-01-27 1999-04-23 Thomson Csf Procede de modelisation fine du fouillis de sol recu par un radar
DE19848596C2 (de) * 1998-10-21 2002-01-24 Roland Sittig Halbleiterschalter mit gleichmäßig verteilten feinen Steuerstrukturen
US6566759B1 (en) * 1999-08-23 2003-05-20 International Business Machines Corporation Self-aligned contact areas for sidewall image transfer formed conductors
DE10127952A1 (de) * 2001-06-08 2002-12-19 Infineon Technologies Ag Laterale PIN-Diode und Verfahren zur Herstellung derselben
US6835967B2 (en) * 2003-03-25 2004-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor diodes with fin structure
US7129805B2 (en) * 2005-02-01 2006-10-31 Continental Microwave & Tool Company, Inc. Method of increasing the operating frequency in a series-shunt configured PIN diode switch
RU2456705C1 (ru) * 2011-01-24 2012-07-20 Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") Ограничитель свч мощности
RU2515181C1 (ru) * 2012-09-17 2014-05-10 Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") Сверхширокополосный ограничитель свч-мощности
CN102944941B (zh) * 2012-11-12 2014-11-12 中国计量学院 多c形凹槽太赫兹波开关
CN103151393B (zh) * 2013-02-28 2015-04-15 溧阳市宏达电机有限公司 一种pin二极管的封装结构
US10468543B2 (en) 2013-05-22 2019-11-05 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
US11121271B2 (en) 2013-05-22 2021-09-14 W&WSens, Devices, Inc. Microstructure enhanced absorption photosensitive devices
US10446700B2 (en) 2013-05-22 2019-10-15 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
US10700225B2 (en) 2013-05-22 2020-06-30 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
KR102472078B1 (ko) * 2013-05-22 2022-11-29 시-위안 왕 마이크로구조-증강 흡수 감광성 디바이스
RU2535915C1 (ru) * 2013-10-30 2014-12-20 Открытое акционерное общество "Научно-производственное предприятие "Радий" Диодная сборка для свч защитных устройств
JP6875987B2 (ja) 2014-11-18 2021-05-26 ダブリュアンドダブリュセンス デバイシーズ， インコーポレイテッドＷ＆Ｗｓｅｎｓ Ｄｅｖｉｃｅｓ， Ｉｎｃ． マイクロストラクチャ向上型吸収感光装置
US10680087B2 (en) * 2018-09-05 2020-06-09 Nxp B.V. Gated diode having fingers with elevated gates
KR102449170B1 (ko) * 2018-11-16 2022-09-30 한국전자통신연구원 반도체 기반의 빔포밍 안테나

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2071043A5 (de) * 1969-12-16 1971-09-17 Thomson Csf

Also Published As

Publication number Publication date
FR2553583A1 (fr) 1985-04-19
EP0140772A2 (de) 1985-05-08
US4571559A (en) 1986-02-18
FR2553583B1 (fr) 1986-03-21
EP0140772B1 (de) 1988-07-20
EP0140772A3 (de) 1985-06-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee