DE3460840D1 - An apparatus for measuring carrier lifetimes in a semiconductor - Google Patents

An apparatus for measuring carrier lifetimes in a semiconductor

Info

Publication number
DE3460840D1
DE3460840D1 DE8484300626T DE3460840T DE3460840D1 DE 3460840 D1 DE3460840 D1 DE 3460840D1 DE 8484300626 T DE8484300626 T DE 8484300626T DE 3460840 T DE3460840 T DE 3460840T DE 3460840 D1 DE3460840 D1 DE 3460840D1
Authority
DE
Germany
Prior art keywords
semiconductor
carrier lifetimes
measuring carrier
measuring
lifetimes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484300626T
Other languages
English (en)
Inventor
Honma Noriaki
Munakata Chusuke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3460840D1 publication Critical patent/DE3460840D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
DE8484300626T 1983-02-01 1984-02-01 An apparatus for measuring carrier lifetimes in a semiconductor Expired DE3460840D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58015174A JPS59141238A (ja) 1983-02-01 1983-02-01 キヤリア寿命測定装置

Publications (1)

Publication Number Publication Date
DE3460840D1 true DE3460840D1 (en) 1986-11-06

Family

ID=11881442

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484300626T Expired DE3460840D1 (en) 1983-02-01 1984-02-01 An apparatus for measuring carrier lifetimes in a semiconductor

Country Status (5)

Country Link
US (1) US4581578A (de)
EP (1) EP0118199B1 (de)
JP (1) JPS59141238A (de)
CA (1) CA1203325A (de)
DE (1) DE3460840D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706018A (en) * 1984-11-01 1987-11-10 International Business Machines Corporation Noncontact dynamic tester for integrated circuits
EP0226913A3 (de) * 1985-12-17 1988-10-05 Siemens Aktiengesellschaft Verfahren und Anordnung zur Lokalisierung und/oder Abbildung der ein bestimmtes zeitabhängiges Signal führenden Punkte einer Probe
US4786865A (en) * 1986-03-03 1988-11-22 The Boeing Company Method and apparatus for testing integrated circuit susceptibility to cosmic rays
IT1216540B (it) * 1988-03-29 1990-03-08 Sgs Thomson Microelectronics Metodo e apparecchiatura per la misura del tempo di vita su giunzioni p_n a semiconduttore tramite effetto fotovoltaiico.
US5025145A (en) * 1988-08-23 1991-06-18 Lagowski Jacek J Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements
JP2889307B2 (ja) * 1990-03-26 1999-05-10 株式会社東芝 ▲ｉｖ▼族半導体のキャリアライフタイム測定法
US5053699A (en) * 1990-05-25 1991-10-01 Texas Instruments Incorporated Scanning electron microscope based parametric testing method and apparatus
JP2702807B2 (ja) * 1990-08-09 1998-01-26 東芝セラミックス株式会社 半導体中の深い不純物準位の測定方法及びその装置
JPH07105427B2 (ja) * 1992-10-19 1995-11-13 学校法人幾徳学園 半導体材料のライフタイム評価方法とその装置
US5661408A (en) 1995-03-01 1997-08-26 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US6037797A (en) * 1997-07-11 2000-03-14 Semiconductor Diagnostics, Inc. Measurement of the interface trap charge in an oxide semiconductor layer interface
US6325078B2 (en) 1998-01-07 2001-12-04 Qc Solutions, Inc., Apparatus and method for rapid photo-thermal surface treatment
US6154034A (en) * 1998-10-20 2000-11-28 Lovelady; James N. Method and apparatus for testing photovoltaic solar cells using multiple pulsed light sources
US6512384B1 (en) 2000-06-29 2003-01-28 Semiconductor Diagnostics, Inc. Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages
US6836139B2 (en) * 2002-10-22 2004-12-28 Solid State Measurments, Inc. Method and apparatus for determining defect and impurity concentration in semiconducting material of a semiconductor wafer
US6911350B2 (en) * 2003-03-28 2005-06-28 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US7119569B2 (en) * 2004-03-05 2006-10-10 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US7200825B2 (en) * 2004-08-27 2007-04-03 International Business Machines Corporation Methodology of quantification of transmission probability for minority carrier collection in a semiconductor chip
US20070115460A1 (en) * 2005-11-21 2007-05-24 Capaldo Kevin P Method for examining molds and apparatus for accomplishing the same
US8816715B2 (en) * 2011-05-12 2014-08-26 Nanya Technology Corp. MOS test structure, method for forming MOS test structure and method for performing wafer acceptance test
RU2484551C1 (ru) * 2012-01-31 2013-06-10 Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" Способ измерения времени жизни неосновных носителей заряда в кремнии
RU2486629C1 (ru) * 2012-01-31 2013-06-27 Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" Способ контроля времени жизни неосновных носителей заряда в слитках кремния

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266373A (en) * 1975-11-28 1977-06-01 Sharp Corp Determination of lifetime and surface recombination speed of semicondu ctor device
US4273421A (en) * 1977-01-17 1981-06-16 Motorola, Inc. Semiconductor lifetime measurement method
US4122383A (en) * 1977-12-16 1978-10-24 Nasa Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells
US4211488A (en) * 1978-10-03 1980-07-08 Rca Corporation Optical testing of a semiconductor
US4333051A (en) * 1980-05-28 1982-06-01 Rca Corporation Method and apparatus for determining minority carrier diffusion length in semiconductors
US4563642A (en) * 1981-10-09 1986-01-07 Hitachi, Ltd. Apparatus for nondestructively measuring characteristics of a semiconductor wafer with a junction

Also Published As

Publication number Publication date
JPS59141238A (ja) 1984-08-13
US4581578A (en) 1986-04-08
CA1203325A (en) 1986-04-15
EP0118199B1 (de) 1986-10-01
EP0118199A1 (de) 1984-09-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee