DE3345212A1 - Unipolar transistor - Google Patents
Unipolar transistorInfo
- Publication number
- DE3345212A1 DE3345212A1 DE19833345212 DE3345212A DE3345212A1 DE 3345212 A1 DE3345212 A1 DE 3345212A1 DE 19833345212 DE19833345212 DE 19833345212 DE 3345212 A DE3345212 A DE 3345212A DE 3345212 A1 DE3345212 A1 DE 3345212A1
- Authority
- DE
- Germany
- Prior art keywords
- control electrodes
- unipolar transistor
- transistor according
- strip
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 abstract 1
- 230000035515 penetration Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8122—Vertical transistors
Abstract
Description
Unipolartransistor Unipolar transistor
Die Erfindung betrifft einen Unipolartransistor mit einer Drain- und einer Sourcezone sowie einer Mehrzahl von Steuerelektroden, die mehrere die Source- und die Drainzone miteinander verbindende Kanalbereiche voneinander trennen. Aktive Halbleiterbauelemente zur Verstärkung von Signalen im oberen GHz-Bereich bzw. für schnelle Digital-Anwendung basieren auf dem Steuerungsmechanismus für die Majoritätsladungsträger. Bei den bekannten Anordnungen handelt es sich um triodenartige Strukturen, bei denen eine Spannungsverstärkung durch die hohe innere Rückwirkung (Durchgriff) begrenzt ist.The invention relates to a unipolar transistor with a drain and a source zone and a plurality of control electrodes, which several of the source and separate channel regions which connect the drain zone to one another. Active Semiconductor components for amplifying signals in the upper GHz range or for fast digital application are based on the control mechanism for the majority carriers. The known arrangements are triode-like structures in which a voltage gain is limited by the high internal reaction (penetration) is.
Der Erfindung liegt die Aufgabe zugrunde, einen Unipolartransistor anzugeben, bei dem die innere Rückwirkung gegenüber den bekannten Anordnungen erheblich reduziert ist.The invention is based on the object of a unipolar transistor indicate, in which the internal repercussions are considerable compared to the known arrangements is reduced.
Die genannte Aufgabe wird bei einem Unipolartransistor der eingangs beschriebenen Art erfindungsgemäß dadurch gelöst, daß ein Teil der Steuerelektroden mit einem festen Bezugspotential verbunden ist, während die restlichen Steuerelektroden für den Anschluß an das variable Steuersignal vorgesehen sind. Durch die Potentialfestlegung von Bereichen, die den an das variable Steuersignal angeschlossenen Steuerelektroden unmittelbar benachbart sind, wird die Steuerwirkung etwas reduziert. Der wesentliche Vorteil ergibt sich jedoch durch die wesentliche Reduzierung der inneren Rückwirkung aufgrund der veränderten Feldverteilung. Durch die Reduzierung des Durchgriffes entsteht eine höhere Spannungsverstärkung des Unipolartransistors, da diese Spannungsverstärkung dem Durchgriff umgekehrt proportional ist.In the case of a unipolar transistor, the task mentioned is the one at the beginning described type according to the invention achieved in that part of the control electrodes is connected to a fixed reference potential, while the remaining control electrodes are provided for connection to the variable control signal. By defining the potential of areas belonging to the control electrodes connected to the variable control signal are immediately adjacent, the tax effect becomes something reduced. The main advantage, however, results from the substantial reduction in internal reaction due to the changed field distribution. By reducing the penetration creates a higher voltage gain of the unipolar transistor, since this voltage gain is inversely proportional to the punch through.
Die streifenförmigen Steuerelektroden verlaufen vorzugsweise parallel zueinander und werden in einer bevorzugten Ausführungsform im Folgewechsel an das Steuersignal und an das Festpotential angeschlossen. Es ist aber auch möglich, eine von dem 1:1-Verhältnis abweichende Beschaltungsweise zu wählen und z. B. zwei Steuerelektroden mit dem variablen Steuersignal und eine nachfolgende Steuerelektrode mit festem Bezugspotential zu versehen. Vorteilhafte Weiterbildungen der Erfindung ergeben sich aus den Unteransprüchen.The strip-shaped control electrodes preferably run parallel to each other and are in a preferred embodiment in the subsequent change to the Control signal and connected to the fixed potential. But it is also possible to use a to choose a wiring method that differs from the 1: 1 ratio and z. B. two control electrodes with the variable control signal and a subsequent control electrode with a fixed one To provide reference potential. Advantageous further developments of the invention result from the subclaims.
Die Erfindung soll nachfolgend noch anhand eines Ausführungsbeispieles näher erläutert werden.In the following, the invention is also intended to be based on an exemplary embodiment are explained in more detail.
Die Figur 1 zeigt einen Unipolartransistor nach der Erfindung, bei dem die streifenförmigen Steuerelektroden gleich breit sind und gleiche Abstände voneinander haben.Figure 1 shows a unipolar transistor according to the invention, at which the strip-shaped control electrodes are equally wide and the same spacing have from each other.
Im Beispiel der Figur 2 weisen die aufeinanderfolgenden Steuerelektroden eine unterschiedliche Breite auf.In the example in FIG. 2, the successive control electrodes a different width.
Der Unipolartransistor nach Figur 1 ist für einen vertikalen Betrieb vorgesehen, d. h. der Strom fließt von der Source-Elektrode 11 an der Oberfläche der Halbleiteranordnung durch die sich anschließende Sourcezone 2 über die Kanalbereiche 9 zur Drainzone 1, die an der Unterseite der Halbleiteranordnung mit der Drainelektrode 10 versehen ist. Der Halbleiterkörper besteht beispielsweise aus Galliumarsenid oder aus Gallium-Indiumarsenid mit einer Störstellenkonzentration von ca. 5 x 1016 - 1017 Atomen/cm3. Die Steuerelektroden 3 - 8, die in ihrer Längsausdehnung im Inneren des Halbleiterkörpers parallel zueinander verlaufen, haben beispielsweise eine Länge von 0,1 mm und eine Breite von 0,3 - 0,6 um. Die Sourcezone 2 hat beispielsweise eine Dicke von 0,3 um, während die Drainzone ca. 1 um dick ist.The unipolar transistor of Figure 1 is for vertical operation provided, d. H. the current flows from the source electrode 11 on the surface the semiconductor arrangement through the adjoining source zone 2 via the channel regions 9 to the drain zone 1, which is on the underside of the semiconductor device with the drain electrode 10 is provided. The semiconductor body consists for example of gallium arsenide or from gallium indium arsenide with an impurity concentration of approx. 5 x 1016 - 1017 atoms / cm3. The control electrodes 3 - 8, which in their longitudinal extent run parallel to one another in the interior of the semiconductor body, for example a length of 0.1 mm and a width of 0.3-0.6 µm. The source zone 2 has, for example a thickness of 0.3 µm, while the drain zone is about 1 µm thick.
Die Halbleiteranordnung nach Figur 1 wird beispielsweise dadurch hergestellt, daß auf einem Grundsubstrat durch selektive Epitaxie die streifenförmigen Steuerelektroden 3 - 8 aus einem hochdotiertem Halbleitermaterial mit einem zu der Source- und Drainzone entgegengesetzten Leitungstyp abgeschieden werden. Die dabei entstehende Anordnung wird schließlich mit einer weiteren Epitaxieschicht 2, die die Sourcezone bildet, bedeckt. Diese Epitaxieschicht kann durch Gasphasen -oder durch Flüssigphasenepitaxie erzeugt werden.The semiconductor arrangement according to FIG. 1 is produced, for example, by that the strip-shaped control electrodes on a base substrate by selective epitaxy 3 - 8 made of a highly doped semiconductor material with a source and drain zone opposite conduction type are deposited. The resulting arrangement is finally covered with a further epitaxial layer 2, which forms the source zone, covered. This epitaxial layer can be produced by gas phase or by liquid phase epitaxy be generated.
Anstelle der Steuerelektroden aus hochdotiertem Halbleitermaterial können auch Metallstreifen auf das Grundsubstrat 1 abgeschieden werden, die mit diesem Grundsubstrat Schottky-Kontakte bilden. Als Kontaktmetall bei einem Galliumarsenid-Halbleiterkörper mit einer n-Dotierung eignet sich beispielsweise Wolfram.Instead of the control electrodes made of highly doped semiconductor material metal strips can also be deposited on the base substrate 1 with form Schottky contacts on this base substrate. As a contact metal in a gallium arsenide semiconductor body with n-doping, for example, tungsten is suitable.
Nach den epitaktischen Abscheidungsprozessen müssen die Steuerelektroden 3 - 8 beispielsweise dadurch freigelegt werden, daß die Epitaxieschicht 2 in einem für die Kontaktierung der Steuerelektroden vorgesehenen Bereich wieder entfernt wird. Die Steuerelektroden 3 - 8 können an dieser Stelle gegebenenfalls mit Anschlußelektroden 3a - 8a versehen werden. Die Steuerelektroden 3a, 5a und 7a werden nunmehr miteinander verbunden und an ein festes Bezugspotential angeschlossen. Die Steuerelektroden 4a, 6a und 8a werden gleichfalls miteinander verbunden und sind für den#Anschluß an das variable Steuersignal vorgesehen. Durch das feste Bezugspotential an den Steuerelektroden 3a, 5a und 7a bilden sich um diese Steuerelektroden im Kanalbereich 9 Raumladungsbereiche mit einer teilweisen Kanalabschnürung. Dadurch reduziert sich der Eingriff des Drain-Feldes in dem Source-Kanal-Bereich erheblich. Die Zusatzelektroden, die mit dem festen Bezugspotential verbunden sind, bewirken somit eine Stabilisierung des Potentialverlaufes im Inneren der Halbleiteranordnung.After the epitaxial deposition processes, the control electrodes must 3 - 8 are exposed, for example, in that the epitaxial layer 2 in one area provided for contacting the control electrodes is removed again will. The control electrodes 3 - 8 can optionally have connection electrodes at this point 3a - 8a are provided. The control electrodes 3a, 5a and 7a are now connected to one another connected and connected to a fixed reference potential. The control electrodes 4a, 6a and 8a are also connected together and are for the # connection to the variable control signal provided. Due to the fixed reference potential on the control electrodes 3a, 5a and 7a are formed around these control electrodes in the channel area 9 space charge areas with a partial channel constriction. This reduces the interference of the drain field in the source-channel region is considerable. The additional electrodes, that are connected to the fixed reference potential thus cause stabilization the potential profile inside the semiconductor arrangement.
Da die Größe des festen Bezugspotentials an den Steuerelektroden 3a, 5a und 7a frei wählbar ist, kann mit diesem Potential der Durchgriff und damit die Verstärkung des Unipolartransistors eingestellt werden.Since the size of the fixed reference potential at the control electrodes 3a, 5a and 7a can be freely selected, with this potential the penetration and thus the Gain of the unipolar transistor can be adjusted.
Die Anordnung nach Figur 2 unterscheidet sich von der der Figur 1 nur dadurch, daß die streifenförmigen Steuerelektroden 3, 5 und 7 in ihrer Querausdehnung breiter sind als die Steuerelektroden 4, 6 und 8, wobei in der Querrichtung der Halbleiteranordnung breite und schmale Steuerelektroden im Wechsel angeordnet sind.The arrangement according to FIG. 2 differs from that of FIG. 1 only in that the strip-shaped control electrodes 3, 5 and 7 in their transverse extent are wider than the control electrodes 4, 6 and 8, in the transverse direction of the Semiconductor array wide and narrow control electrodes are arranged alternately.
Die Steuerelektroden 3, 5 und 7, die für den Anschluß an ein festes Bezugspotential vorgesehen sind, haben beispielsweise eine Breite von 0,6 jim, während die Steuerelektroden 4, 6 und 8, die an das variable Steuersignal angeschlosssen werden, beispielsweise eine Breite von 0,4 um haben. Die Abstände zwischen den Steuerelektroden sind stets gleich groß und betragen beispielsweise ebenfalls 0,4 um.The control electrodes 3, 5 and 7, which are used for connection to a fixed Reference potential are provided, for example, have a width of 0.6 μm, while the control electrodes 4, 6 and 8 connected to the variable control signal will, for example, have a width of 0.4 µm. The distances between the control electrodes are always the same size and are, for example, also 0.4 μm.
Aus der Variation bzw. aus den Unterschieden der Querausdehnung der Steuerelektroden ergibt sich eine weitere Möglichkeit, den Durchgriff und damit die Verstärkung des Unipolartransistors in der gewünschten Weise einzustellen.From the variation or from the differences in the transverse extent of the Control electrodes are another possibility, the penetration and thus adjust the gain of the unipolar transistor in the desired manner.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19833345212 DE3345212A1 (en) | 1983-12-14 | 1983-12-14 | Unipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19833345212 DE3345212A1 (en) | 1983-12-14 | 1983-12-14 | Unipolar transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3345212A1 true DE3345212A1 (en) | 1985-06-27 |
Family
ID=6216910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19833345212 Ceased DE3345212A1 (en) | 1983-12-14 | 1983-12-14 | Unipolar transistor |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3345212A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4062036A (en) * | 1974-04-06 | 1977-12-06 | Nippon Gakki Seizo Kabushiki Kaisha | Junction field effect transistor of vertical type |
GB2000908A (en) * | 1977-07-07 | 1979-01-17 | Zaidan Hojin Handotai Kenkyu | Static induction transistor and its applied devices |
WO1981000489A1 (en) * | 1979-08-10 | 1981-02-19 | Massachusetts Inst Technology | Semiconductor embedded layer technology |
-
1983
- 1983-12-14 DE DE19833345212 patent/DE3345212A1/en not_active Ceased
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4062036A (en) * | 1974-04-06 | 1977-12-06 | Nippon Gakki Seizo Kabushiki Kaisha | Junction field effect transistor of vertical type |
GB2000908A (en) * | 1977-07-07 | 1979-01-17 | Zaidan Hojin Handotai Kenkyu | Static induction transistor and its applied devices |
WO1981000489A1 (en) * | 1979-08-10 | 1981-02-19 | Massachusetts Inst Technology | Semiconductor embedded layer technology |
Non-Patent Citations (2)
Title |
---|
IEEE Transactions on electron devices, Vol. ED- 29, No. 10, October 1982, p. 1708 * |
IEEE Transactions on electron devices, Vol. ED-27, No. 6, June 1980, pp. 1128-1141 * |
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Date | Code | Title | Description |
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OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
8120 | Willingness to grant licences paragraph 23 | ||
8110 | Request for examination paragraph 44 | ||
8131 | Rejection |