DE3342773A1 - Process for producing MOS field-effect transistors with high dielectric strength and with a gentle concentration profile at the drain junction - Google Patents
Process for producing MOS field-effect transistors with high dielectric strength and with a gentle concentration profile at the drain junctionInfo
- Publication number
- DE3342773A1 DE3342773A1 DE19833342773 DE3342773A DE3342773A1 DE 3342773 A1 DE3342773 A1 DE 3342773A1 DE 19833342773 DE19833342773 DE 19833342773 DE 3342773 A DE3342773 A DE 3342773A DE 3342773 A1 DE3342773 A1 DE 3342773A1
- Authority
- DE
- Germany
- Prior art keywords
- carried out
- kev
- drain
- mos field
- concentration profile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000005669 field effect Effects 0.000 title claims abstract description 7
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005468 ion implantation Methods 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 8
- 230000035876 healing Effects 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- -1 arsenic ions Chemical class 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000000717 retained effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 3
- 230000002547 anomalous effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Verfahren zum Herstellen von spannungsfesten MOS-Feld-Process for the production of voltage-resistant MOS field
effekttransistoren mit weichen Konzentrationsprofilen am Drain-Uberqanq.Effect transistors with soft concentration profiles at the drain Uberqanq.
Die Patentanmeldung betrifft ein Verfahren zum Herstellen von spannungsfesten MOS-Feldeffekttransistoren mit weichen Konzentrationsprofilen am Drain-Übergang.The patent application relates to a method for producing voltage-proof MOS field effect transistors with soft concentration profiles at the drain junction.
Bei der bekannten Drain-Implantation von Kurzkanal-MOS-Feldeffekttransistoren wird eine Arsen-Ionen-Implantation mit niedriger Energie, zum Beispiel mit 80 keV, durchgeführt. Beim anschließenden Ausheilschritt zur Beseitigung der durch die Implantation verursachten Kristallgitterfehler diffundieren die Arsen-Ionen ca. 0,2 bis 0,3 pm tief in das Halbleitersubstrat ein. Infolge des anomalen Diffusionsverhaltens von Arsen entsteht ein nahezu rechteckförmiges Profil mit sehr steilen Konzentrationsgradienten am pn Ubergang. Dieser steile Konzentrationsgradient führt zu hohen Feldern am pn-Ubergang und damit zu Durchbruchs- und Degradationsproblemen.In the known drain implantation of short channel MOS field effect transistors an arsenic ion implantation with low energy, for example with 80 keV, carried out. During the subsequent healing step to eliminate the effects of the implantation The arsenic ions diffuse approx. 0.2 to 0.3 pm due to crystal lattice defects deep into the semiconductor substrate. As a result of the anomalous diffusion behavior of Arsenic creates an almost rectangular profile with very steep concentration gradients at the pn transition. This steep concentration gradient leads to high fields at the pn junction and thus to breakthrough and degradation problems.
Aufgabe der Erfindung ist es daher, ein Verfahren zur Erzeugung eines weichen Konzentrationsprofils am drainseitigen pn-Übergang eines MOS-Feldeffekttransistors anzugeben, so daß eine höhere Spannungsfestigkeit erzielt werden kann.The object of the invention is therefore to provide a method for producing a soft concentration profile at the drain-side pn junction of a MOS field effect transistor so that a higher dielectric strength can be achieved.
Wie aus einem Aufsatz von Takeda aus IEEE Transaction on Electron Devices, Vol. ED-29, Nr. 4, 1980, auf den-Seiten 611 bis 617, insbesondere Figur 11, zu entnehmen ist, lassen sich weichere Profilflanken durch Verwendung von Phosphor anstelle von Arsen erzielen. Ein Nachteil dabei ist, daß eine starke Unterdiffusion auftritt.Like an article by Takeda from IEEE Transaction on Electron Devices, Vol. ED-29, No. 4, 1980, on pages 611 to 617, in particular Figure 11, it can be seen that softer profile flanks can be achieved by using phosphorus instead of arsenic. A disadvantage is that there is a strong underdiffusion occurs.
Eine weitere Möglichkeit, die Profilflanken am drainseitigen pn-Übergang weicher zu gestalten, ist dadurch gegeben, daß eine niedriger dotierte Anschlußdiffusion mit Arsen an die eigentliche Source/Drain-Implantation durchgeführt wird (näheres siehe Aufsatz von Takeda, Figur 10, Ausführungsbeispiel c). Diese als lightly doped drain (= LDD) bezeichneten Bereiche haben den Nachteil, daß sie einen erhöhten Serienwiderstand bedingen.Another possibility, the profile flanks at the drain-side pn-junction to make it softer is given by the fact that a lower doped connection diffusion is carried out with arsenic on the actual source / drain implantation (details see article by Takeda, Figure 10, embodiment c). These as lightly doped drain (= LDD) designated areas have the disadvantage that they have an increased series resistance condition.
Die Erfindung löst die gestellte Aufgabe der Erzeugung eines weichen Konzentrationsprofiles am drainseitigen pn-Übergang dadurch, daß die Drain-Gebiete durch Implantation mit Arsen-Ionen mit einer Energie größer 180 keV und ei-1015 Dosis 1015 bis 1016 cm -2 hergestellt werden und ner Dosis hergestelltwerden und die anschließenden Ausheilverfahren so geführt werden, daß das durch die Arsen-Ionen-Implantation erhaltene weiche Konzentrationsprofil am pn-Übergang erhalten bleibt. Dabei liegt es im Rahmen der Erfindung, daß ein Kurzzeit-Ausheilverfahren unter Verwendung hochenergetischer Strahlung, wie "In- coherent Light Annealing", oder ein thermisches Ausheilverfahren im Bereich von 700 bis 9000C mit einer Zeitdauer von weniger als einer Stunde durchgeführt wird.The invention solves the problem of producing a soft one Concentration profile at the drain-side pn junction in that the drain regions by implantation with arsenic ions with an energy greater than 180 keV and ei-1015 Dose 1015 to 1016 cm -2 can be made and a dose can be made and the subsequent healing processes are carried out in such a way that this is achieved by the arsenic ion implantation obtained soft concentration profile at the pn junction is retained. It lies it is within the scope of the invention that a short-term healing process using high-energy Radiation, such as "Incoherent Light Annealing", or a thermal annealing process carried out in the range of 700 to 9000C for a period of less than one hour will.
Die Erfindung macht sich dabei die aus dem Buch "Halbleiter-Technologie" von I. Ruge, Springer-Verlag, 1975, auf den Seiten 144 bis 146, insbesondere aus der Tabelle 4.6, bekannten Ergebnisse zunutze, wonach mit der Reichweite der Ionen (R ) auch die Standardabweichung X Rp zunimmt, p p so daß mit zunehmender Energie der Ionen die Ionenprofile im Innern des Festkörpers immer tiefer liegen und breiter werden. Wird also die Drain-Implantation von Arsen nach der Lehre der Erfindung mit hoher Energie durchgeführt, so erhält man eine größere Reichweite Rp und Standardabweichung # Rp des Konzentrationspeaks.The invention is based on the book "Semiconductor Technology" by I. Ruge, Springer-Verlag, 1975, on pages 144 to 146, in particular from Table 4.6, using known results, according to which the range of the ions (R) also the standard deviation X Rp increases, p p so that with increasing energy of the ions, the ion profiles in the interior of the solid are always deeper and wider will. So is the drain-implantation of arsenic according to the teaching of the invention carried out with high energy, a greater range Rp and standard deviation are obtained # Rp of the concentration peak.
Das wesentliche Merkmal der Erfindung ist, daß in der weiteren Prozeßführung darauf geachtet wird, daß die Profilgestaltung durch das anomale Diffusionsverhalten von Arsen nicht wieder steiler wird. Ideal zum Ausheilen der Strahlengitterschäden geeignet sind alle "rapid anneal"-Verfahren. Dadurch läßt sich eine starke Verringerung der Konzentrationsgradienten erzielen.The essential feature of the invention is that in the further process management Care is taken that the profile design is due to the anomalous diffusion behavior arsenic does not become steeper again. Ideal for healing the radiation grid damage all "rapid anneal" methods are suitable. This allows a great reduction achieve the concentration gradient.
Messungen mittels der Sekundär-Ionen-Massen-Spektrometrie (SIMS) und Device-Simulationsrechnungen lassen bei einem nach dem erfindungsgemäßen Verfahren hergestellten MOS-Feldeffekttransistor einen Anstieg der Spannungsfestigkeit von 1 bis 2 V erwarten, wenn die Energie der Drain-Implantation von 80 keV auf 200 keV erhöht wird.Measurements using secondary ion mass spectrometry (SIMS) and Device simulation calculations can be carried out according to the method according to the invention manufactured MOS field effect transistor an increase in the dielectric strength of Expect 1 to 2 V when the energy of the drain implantation goes from 80 keV to 200 keV is increased.
Das Prinzip der Erfindung läßt sich auch bei der Herstellung einer niedrig dotierten Anschlußdiffusion im LDD-Verfahren anwenden. Wird die Anschlußdiffusion mit Arsen-Ionen mit erhöhter Energie (größer 130 keV) durchgeführt, so kann zur Erzielung derselben Spannungsfestigkeit die Dosis um 1 bis 2 Größenordnungen höher gewählt werden. Dadurch lassen sich die Serienwiderstände klein halten. Solange die LDD-Dosis noch kleiner als bei den stark dotierten Drain-Gebieten bleibt, ist bei dieser Variante eine längere thermische Ausheilung möglich, ohne daß die durch die Implantation erzeugte Profilgestalt verändert wird.The principle of the invention can also be used in the manufacture of a Apply lightly doped connection diffusion in the LDD process. Will the connection diffusion carried out with arsenic ions with increased energy (greater than 130 keV), the Achieving the same dielectric strength the dose 1 to 2 orders of magnitude higher to get voted. This allows the series resistances to be kept small. So long the LDD dose remains even smaller than in the case of the heavily doped drain regions With this variant, a longer thermal healing is possible without the through the profile shape produced by implantation is changed.
Anhand der Figuren 1 und 2 sollen die Unterschiede des erfindungsgemäßen Verfahrens zum Stand der Technik noch klarer herausgestellt werden. Die Figuren stellen den Konzentrationsverlauf (Atome cm 3) in Abhängigkeit von der Eindringtiefe (nm) in einkristallinem Silizium nach dem Ausheilen dar. Dabei zeigen die strichpunktierten Kurven die Meßpunkte der SIMS-Messung.Based on Figures 1 and 2, the differences between the invention Prior art method can be emphasized even more clearly. The figures represent the concentration curve (atoms cm 3) as a function of the penetration depth (nm) in monocrystalline silicon after healing. The dash-dotted lines show Curves the measuring points of the SIMS measurement.
Die Figur 1 betrifft eine Arsen-Ionen-Implantation mit einer Dosis von 1x 1016 cm2 und der Energie von 80 keV, sowie einer Temperung von 900O und 400 Minuten.FIG. 1 relates to an arsenic ion implantation one Dose of 1x 1016 cm2 and the energy of 80 keV, as well as a tempering of 900 ° and 400 minutes.
Die Figur 2 (Erfindung) betrifft eine Arsen-Ionen-Implantation mit einer Dosis von 5 x 1015 cm und einer Energie von 200 keV, sowie einer Temperung bei 9000C und 50 Minuten.FIG. 2 (invention) relates to an arsenic ion implantation a dose of 5 x 1015 cm and an energy of 200 keV, as well as tempering at 9000C and 50 minutes.
Wie ein Vergleich der beiden Figuren zeigt, ist aus dem Kurvenverlauf bei Figur 2 eine starke Verringerung des Konzentrationsgradienten zu entnehmen, während der Kurvenverlauf bei Figur 1 einen sehr steilen Konzentrationsgradienten aufweist.As a comparison of the two figures shows, is from the curve a strong reduction in the concentration gradient can be seen in FIG. 2, while the curve in Figure 1 shows a very steep concentration gradient having.
6 Patentansprüche 2 Figuren6 claims 2 figures
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833342773 DE3342773A1 (en) | 1983-11-25 | 1983-11-25 | Process for producing MOS field-effect transistors with high dielectric strength and with a gentle concentration profile at the drain junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833342773 DE3342773A1 (en) | 1983-11-25 | 1983-11-25 | Process for producing MOS field-effect transistors with high dielectric strength and with a gentle concentration profile at the drain junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3342773A1 true DE3342773A1 (en) | 1985-06-05 |
Family
ID=6215316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833342773 Ceased DE3342773A1 (en) | 1983-11-25 | 1983-11-25 | Process for producing MOS field-effect transistors with high dielectric strength and with a gentle concentration profile at the drain junction |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3342773A1 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2021863A (en) * | 1978-05-26 | 1979-12-05 | Rockwell International Corp | Method of making integrated circuits |
| US4318216A (en) * | 1978-11-13 | 1982-03-09 | Rca Corporation | Extended drain self-aligned silicon gate MOSFET |
| EP0056856A1 (en) * | 1981-01-22 | 1982-08-04 | International Business Machines Corporation | Method for forming P-N junctions, particularly in IGFET devices, with improved drain voltage characteristics |
| EP0072216A2 (en) * | 1981-08-05 | 1983-02-16 | Fujitsu Limited | The production of semiconductor devices by methods involving annealing |
| EP0097533A2 (en) * | 1982-06-23 | 1984-01-04 | Fujitsu Limited | A method of manufacturing a MIS type semiconductor device |
| EP0101608A2 (en) * | 1982-08-19 | 1984-02-29 | Nec Corporation | Insulated gate type field effect transistor having a silicon gate electrode |
-
1983
- 1983-11-25 DE DE19833342773 patent/DE3342773A1/en not_active Ceased
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2021863A (en) * | 1978-05-26 | 1979-12-05 | Rockwell International Corp | Method of making integrated circuits |
| US4318216A (en) * | 1978-11-13 | 1982-03-09 | Rca Corporation | Extended drain self-aligned silicon gate MOSFET |
| EP0056856A1 (en) * | 1981-01-22 | 1982-08-04 | International Business Machines Corporation | Method for forming P-N junctions, particularly in IGFET devices, with improved drain voltage characteristics |
| EP0072216A2 (en) * | 1981-08-05 | 1983-02-16 | Fujitsu Limited | The production of semiconductor devices by methods involving annealing |
| EP0097533A2 (en) * | 1982-06-23 | 1984-01-04 | Fujitsu Limited | A method of manufacturing a MIS type semiconductor device |
| EP0101608A2 (en) * | 1982-08-19 | 1984-02-29 | Nec Corporation | Insulated gate type field effect transistor having a silicon gate electrode |
Non-Patent Citations (5)
| Title |
|---|
| Ruge, I., Halbleiter-Technologie, Springer-Verlag,Berlin 1975, S. 14-146 * |
| Sze, S.M., Physics of Semiconductor Devices, 2. Aufl., New York 1981, S. 96-108 * |
| US-Z.: Electronics Letters, Vol. 16, 1980, S. 477, 478 * |
| US-Z: Applied Physics Letters, 42(10), 15.Nov.1983S.957-959 * |
| US-Z: Applied Physics Letters, Bd.35, No.8, 1979, S.621-623 * |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8110 | Request for examination paragraph 44 | ||
| 8131 | Rejection |