DE3278186D1 - Transient absorption semiconductor device - Google Patents

Transient absorption semiconductor device

Info

Publication number
DE3278186D1
DE3278186D1 DE8282304718T DE3278186T DE3278186D1 DE 3278186 D1 DE3278186 D1 DE 3278186D1 DE 8282304718 T DE8282304718 T DE 8282304718T DE 3278186 T DE3278186 T DE 3278186T DE 3278186 D1 DE3278186 D1 DE 3278186D1
Authority
DE
Germany
Prior art keywords
semiconductor device
transient absorption
absorption semiconductor
transient
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282304718T
Other languages
English (en)
Inventor
Mirka Hempleman
Christopher George Howard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semitron Cricklade Ltd
Original Assignee
Semitron Cricklade Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26282204&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3278186(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Semitron Cricklade Ltd filed Critical Semitron Cricklade Ltd
Application granted granted Critical
Publication of DE3278186D1 publication Critical patent/DE3278186D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Emergency Protection Circuit Devices (AREA)
DE8282304718T 1982-03-09 1982-09-08 Transient absorption semiconductor device Expired DE3278186D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8206881 1982-03-09
GB8218361 1982-06-24

Publications (1)

Publication Number Publication Date
DE3278186D1 true DE3278186D1 (en) 1988-04-07

Family

ID=26282204

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282304718T Expired DE3278186D1 (en) 1982-03-09 1982-09-08 Transient absorption semiconductor device

Country Status (3)

Country Link
EP (1) EP0088179B1 (de)
DE (1) DE3278186D1 (de)
GB (1) GB2116774B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0203231A1 (de) * 1985-05-24 1986-12-03 Semitron Cricklade Ltd. Halbleitervorrichtung mit wenigstens einer Zenerdiode zur Unterdrückung von Störungen
DE3574534D1 (de) * 1985-09-10 1990-01-04 Semitron Cricklade Ltd System zum unterdruecken von transienten ueberspannungen.
EP0360933A1 (de) * 1988-09-28 1990-04-04 Semitron Industries Limited Transientenunterdrückende Anordnung
US9941264B2 (en) 2015-04-03 2018-04-10 Littelfuse, Inc. Transient overvoltage protection device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1576940A (de) * 1968-08-13 1969-08-01
GB1447763A (en) * 1972-11-02 1976-09-02 Westinghouse Brake & Signal Semiconductor device
JPS5378788A (en) * 1976-12-23 1978-07-12 Hitachi Ltd Temperature-compensation-type constant voltage element
DE2800820A1 (de) * 1978-01-10 1979-09-27 Hermann Dr Ing Mader Halbleiter-diode
US4262295A (en) * 1978-01-30 1981-04-14 Hitachi, Ltd. Semiconductor device

Also Published As

Publication number Publication date
GB2116774A (en) 1983-09-28
EP0088179B1 (de) 1988-03-02
EP0088179A3 (en) 1984-08-22
EP0088179A2 (de) 1983-09-14
GB2116774B (en) 1986-05-29

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8339 Ceased/non-payment of the annual fee