DE3271733D1 - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
DE3271733D1
DE3271733D1 DE8282301308T DE3271733T DE3271733D1 DE 3271733 D1 DE3271733 D1 DE 3271733D1 DE 8282301308 T DE8282301308 T DE 8282301308T DE 3271733 T DE3271733 T DE 3271733T DE 3271733 D1 DE3271733 D1 DE 3271733D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282301308T
Other languages
English (en)
Inventor
Masao Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3271733D1 publication Critical patent/DE3271733D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE8282301308T 1981-03-24 1982-03-15 Semiconductor memory device Expired DE3271733D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042692A JPS57157562A (en) 1981-03-24 1981-03-24 Semiconductor memory

Publications (1)

Publication Number Publication Date
DE3271733D1 true DE3271733D1 (en) 1986-07-24

Family

ID=12643090

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282301308T Expired DE3271733D1 (en) 1981-03-24 1982-03-15 Semiconductor memory device

Country Status (3)

Country Link
EP (1) EP0061859B1 (de)
JP (1) JPS57157562A (de)
DE (1) DE3271733D1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10109639B1 (en) 2017-06-09 2018-10-23 International Business Machines Corporation Lateral non-volatile storage cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4000504A (en) * 1975-05-12 1976-12-28 Hewlett-Packard Company Deep channel MOS transistor
DE2543628A1 (de) * 1975-09-30 1977-04-21 Siemens Ag Informationsspeicher zum speichern von information in form von elektrischen ladungstraegern und verfahren zu seinem betrieb

Also Published As

Publication number Publication date
EP0061859A2 (de) 1982-10-06
JPS57157562A (en) 1982-09-29
EP0061859B1 (de) 1986-06-18
EP0061859A3 (en) 1983-07-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee