DE3262018D1 - Encapsulating housing for a power semiconductor functioning in a 2 to 20 ghz frequency range - Google Patents
Encapsulating housing for a power semiconductor functioning in a 2 to 20 ghz frequency rangeInfo
- Publication number
- DE3262018D1 DE3262018D1 DE8282400785T DE3262018T DE3262018D1 DE 3262018 D1 DE3262018 D1 DE 3262018D1 DE 8282400785 T DE8282400785 T DE 8282400785T DE 3262018 T DE3262018 T DE 3262018T DE 3262018 D1 DE3262018 D1 DE 3262018D1
- Authority
- DE
- Germany
- Prior art keywords
- frequency range
- power semiconductor
- ghz frequency
- encapsulating housing
- semiconductor functioning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8109935A FR2506520A1 (fr) | 1981-05-19 | 1981-05-19 | Boitier d'encapsulation pour semiconducteur de puissance fonctionnant dans une gamme de frequences de 2 a 20 ghz |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3262018D1 true DE3262018D1 (en) | 1985-03-07 |
Family
ID=9258627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8282400785T Expired DE3262018D1 (en) | 1981-05-19 | 1982-04-29 | Encapsulating housing for a power semiconductor functioning in a 2 to 20 ghz frequency range |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0065443B1 (OSRAM) |
| JP (1) | JPS57196550A (OSRAM) |
| DE (1) | DE3262018D1 (OSRAM) |
| FR (1) | FR2506520A1 (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2538617B1 (fr) * | 1982-12-28 | 1986-02-28 | Thomson Csf | Boitier d'encapsulation pour semiconducteur de puissance, a isolement entree-sortie ameliore |
| GB8520907D0 (en) * | 1985-08-21 | 1985-09-25 | M O Valve Co Ltd | Hybrid circuit packages |
| JPH0846073A (ja) * | 1994-07-28 | 1996-02-16 | Mitsubishi Electric Corp | 半導体装置 |
| RU2659304C1 (ru) * | 2017-06-14 | 2018-06-29 | Российская Федерация, От Имени Которой Выступает Министерство Промышленности И Торговли Российской Федерации | Корпус мощной гибридной свч интегральной схемы |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4177480A (en) * | 1975-10-02 | 1979-12-04 | Licentia Patent-Verwaltungs-G.M.B.H. | Integrated circuit arrangement with means for avoiding undesirable capacitive coupling between leads |
| US4038157A (en) * | 1976-04-16 | 1977-07-26 | The United States Of America As Represented By The Secretary Of The Air Force | Method of hermetically sealing semiconductor devices |
| FR2376520A1 (fr) * | 1976-12-31 | 1978-07-28 | Radiotechnique Compelec | Diode semiconductrice et ensemble comprenant une telle diode |
-
1981
- 1981-05-19 FR FR8109935A patent/FR2506520A1/fr active Granted
-
1982
- 1982-04-29 EP EP82400785A patent/EP0065443B1/fr not_active Expired
- 1982-04-29 DE DE8282400785T patent/DE3262018D1/de not_active Expired
- 1982-05-18 JP JP57082522A patent/JPS57196550A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2506520B1 (OSRAM) | 1984-10-12 |
| EP0065443B1 (fr) | 1985-01-23 |
| FR2506520A1 (fr) | 1982-11-26 |
| EP0065443A1 (fr) | 1982-11-24 |
| JPS57196550A (en) | 1982-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8339 | Ceased/non-payment of the annual fee |