DE3231732A1 - Electrical contact - Google Patents

Electrical contact

Info

Publication number
DE3231732A1
DE3231732A1 DE19823231732 DE3231732A DE3231732A1 DE 3231732 A1 DE3231732 A1 DE 3231732A1 DE 19823231732 DE19823231732 DE 19823231732 DE 3231732 A DE3231732 A DE 3231732A DE 3231732 A1 DE3231732 A1 DE 3231732A1
Authority
DE
Germany
Prior art keywords
metal layer
contact according
semiconductor component
gold
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19823231732
Other languages
German (de)
Inventor
Peter 7910 Neu-Ulm Marschall
Artur 7930 Ehingen Müßigmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19823231732 priority Critical patent/DE3231732A1/en
Publication of DE3231732A1 publication Critical patent/DE3231732A1/en
Ceased legal-status Critical Current

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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
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Abstract

The invention relates to a semiconductor element, e.g. semiconductor laser or impatt diode, which is welded to a substrate, e.g. a copper heat sink, in particular by means of a thermocompression process. A physically and chemically stable electrical contact, which in particular can equalise thermally caused mechanical stresses, thus results in a cost-effective manner.

Description

Beschreibungdescription

"Elektrischer Kontakt" Die Erfindung betrifft einen elektrischen Kontakt nach dem Oberbegriff des Patentanspruchs 1."Electrical Contact" The invention relates to an electrical contact according to the preamble of claim 1.

In der Halbleitertechnologie wird mit "chip" ein an sich fertiges Halbleiterbauelement, z.B. eine Diode, bezeichnet, an das noch-elektrische Verbindungsleitungen angeschlossen werden müssen. Dieser Vorgang wird Kontaktierung genannt und im folgenden anhand einer schematischen Zeichnung näher erläutert.In semiconductor technology, a "chip" is a finished product Semiconductor component, e.g. a diode, to which electrical connection lines are still connected must be connected. This process is called contacting and is referred to below explained in more detail using a schematic drawing.

Die Figur zeigt einen Querschnitt durch ein elektrisch vollständig kontaktiertes Halbleiterbauelement 1, z.B.The figure shows a cross section through an electrically complete contacted semiconductor component 1, e.g.

einer III-V-Laserdiode, die aus Materialien der Gruppen drei und fünf des Periodensystems der Elemente aufgebaut ist. Zur Herstellung dieser elektrischen Kontaktierung wird das Halbleiterbauelement 1, der sogenannte "chip", zunächst mit Hilfe einer elektrisch leitenden Verbindungsschicht 3 auf einem Träger 2 alfgebracht, z.B. einer Wärmesenke aus Kupfer oder einem wärmeleitenden elektrischen Isolator. Die Verbindungsschicht 3 bewirkt einen ersten elektrischen Kontakt zwischen einer auf dem Halbleiterbauelement 1 aufgebrachten ersten Metallschicht 4 und einer auf dem Träger 2 befindlichen zweiten Metallschicht 5. Anschließend wird an dem Halbleiterbauelement 1 ein zweiter elektrischer Kontakt angebracht, z.B. ein Golddraht 6, der durch Thermokompressionsbonden befestigt wird.a III-V laser diode made from materials from the groups three and five of the Periodic Table of the Elements. To make this electrical contacting is the semiconductor component 1, the so-called "chip", initially with the aid of an electrically conductive connecting layer 3 on a carrier 2, e.g. a heat sink made of copper or a thermally conductive electrical Insulator. The connecting layer 3 causes a first electrical contact between a first metal layer 4 applied to the semiconductor component 1 and a on the carrier 2 located second metal layer 5 Semiconductor component 1 attached a second electrical contact, for example a gold wire 6, which is attached by thermocompression bonding.

Insbesondere bei einem (Verlust-)Wärme erzeugenden elektro-optischen Halbleiterbauelement, wie z.B. einer III-V-Laserdiode, sind für die elektrische Kontaktierung lediglich temperaturbeständige Kontaktierungen, z.B. Lötverbindungen, geeignet. Klebeverbindungen sind ungeeignet.Especially in the case of an electro-optical that generates heat (loss) Semiconductor components, such as a III-V laser diode, are used for electrical Contacting only temperature-resistant contacts, e.g. soldered connections, suitable. Glued connections are unsuitable.

Außerdem soll die Verbindungsschicht 3 verhindern, daß in dem Halbleiterbauelement 1 unzulässige mechanische Spannungen entstehen, die dessen Betriebssicherheit und/oder Lebensdauer verringern. Als Verbindungsschicht 3 werden Lote benutzt, beispielsweise Gold-Zinn- oder Gold-Germanium-Legierungen. Derartige Goldverbindungen sind in erwünschter Weise thermisch stabil und chemisch unempfindlich gegen äußere Einflüsse, z.B. Korrosion. Da diese Goldlegierungen jedoch hart und spröde sind, können jedoch die erwähnten nachteiligen mechanischen Spannungen auftreten. Andere Lote, z.B. Indium oder nicht goldhaltige Indiumlegierungen verhindern die mechanischen Spannungen.In addition, the connecting layer 3 is intended to prevent that in the semiconductor component 1 inadmissible mechanical stresses occur which affect its operational safety and / or Reduce service life. Solders are used as the connecting layer 3, for example Gold-tin or gold-germanium alloys. Such gold compounds are more desirable Way thermally stable and chemically insensitive to external influences, e.g. corrosion. However, since these gold alloys are hard and brittle, the mentioned disadvantageous mechanical stresses occur. Other solders, e.g. indium or not gold-containing indium alloys prevent the mechanical stresses.

Diese Lote besitzen jedoch in nachteiliger Weise einen derart niedrigen Schmelzpunkt, daß beispielsweise beim nachfolgenden Thermokompressionsbonden des Golddrahtes 6 das Lot schmilzt und das Halbleiterbauelement dejustiert werden kann. Außerdem ist die Herstellung derartiger Lötverbindungen unwirtschaftlich, da die Anwendung leicht oxidierender Lote z.B. In einen relativ hohen technologischen Aufwand erfordern.However, these solders disadvantageously have such a low one Melting point that, for example, in the subsequent thermocompression bonding of the Gold wire 6 melts the solder and the semiconductor component can be misaligned. In addition, the production of such soldered connections is uneconomical because the Use of slightly oxidizing solders, e.g. in a relatively high technological effort require.

Aufgabe der Erfindung ist es daher, einen kostengünstig herstellbaren gattungsgemäßen Kontakt anzugeben, der eine gute Wärmeleitung zwischen einem Halbleiterbauelement und einem Träger ermöglicht, der das Entstehen mechanischer Spannungen vermeidet und der im wesentlichen unempfindlich ist gegenüber zeitabhängigen Einflüssen wie z.B. Umkristallisationen und/oder Korrosion.The object of the invention is therefore to provide a cost-effective manufacture Specify generic contact that has good heat conduction between a semiconductor component and a carrier that avoids the creation of mechanical stresses and which is essentially insensitive to time-dependent influences such as e.g. recrystallization and / or corrosion.

Diese Aufgabe wird gelöst durch die im kennzeichnenden Teil des Patentanspruchs 1 angegebenen Merkmale.This object is achieved by the characterizing part of the claim 1 specified features.

Ausgestaltungen und Weiterbildungen sind den Unteransprüchen entnehmbar.Refinements and developments can be found in the subclaims.

Ein erster Vorteil der Erfindung besteht darin, daß der Kontakt kostengünstig herstellbar ist mit Verfahren, die in der Halbleitertechnologie geläufig sind. Ein zweiter Vorteil besteht darin, daß während der Kontaktierung eine mechanische Dejustierung vermieden wird. Dieser Vorteil ist insbesondere wichtig für Laserdioden, die Licht möglichst verlustfrei in Lichtwellenleiter einkoppeln sollen und daher eine genaue Justierung auf einem Träger erfordern.A first advantage of the invention is that the contact is inexpensive can be produced using processes that are common in semiconductor technology. A The second advantage is that mechanical misalignment occurs during contacting is avoided. This advantage is particularly important for laser diodes that emit light should couple into the optical waveguide with as little loss as possible and therefore an accurate one Require adjustment on a carrier.

Die Erfindung wird im folgende anhand eines Ausführungs beispieles unter Bezugnahme auf die eingangs erwähnte Figur näher erläutert. Bei einem Halbleiterbauelement 1, z.B. einem III-V-Halbleiterlaser gemäß der DE-OS 28 22 146, besteht die erste Metallschicht 4 aus einer Goldlegierung, die mindestens 99 Gewichtsprozent Gold enthält. Die erste Metallschicht 4 kann beispielsweise im Vakuum aufgedampft oder galvanisch aufgebracht werden.The invention is illustrated in the following using an embodiment example explained in more detail with reference to the figure mentioned at the beginning. In the case of a semiconductor component 1, e.g. a III-V semiconductor laser according to DE-OS 28 22 146, there is the first Metal layer 4 made of a gold alloy, which is at least 99 percent by weight gold contains. The first metal layer 4 can, for example, be vapor-deposited or in a vacuum be applied galvanically.

Dabei ist die Schichtdicke derart gewählt, daß Unebenheiten, z.B. eine grabenförmige Vertiefung gemäß der DE-OS 28 22 146, im wesentlichen ausgeglichen werden. Auf dem Träger 2, z.B. einer Wärmesenke aus Kupfer, ist die zweite Metallschicht 5 aufgebracht, die ebenfalls aus einer Goldlegierung von 99 Gewichtsprozent Gold besteht. Durch einen anschließenden Thermokompressionsvorgang ("Bonden'!), der in der Halbleitertechnologie geläufig ist, werden die beiden Metallschichten verschweißt. Es entsteht eine thermisch, zeitlich und chemisch stabile Verbindung zwischen den Metallschichten, deren Gesamtdicke so gewählt ist, daß thermisch bedingte mechanische Spannungen zwischen dem Halbleiterbauelement und dem Träger ausgeglichen werden. Weiterhin werden bei einem Thermokompressionsvor gang mechanische Verschiebungen zwischen dem Träger und dem Halbleiterbauelement vermieden, so daß dieses auf kostengünstige Weise justierbar ist.The layer thickness is chosen so that unevenness, e.g. a trench-shaped depression according to DE-OS 28 22 146, substantially balanced will. The second metal layer is on the carrier 2, for example a heat sink made of copper 5 applied, which is also made of a gold alloy of 99 weight percent gold consists. A subsequent thermocompression process ("bonding"!), Which is carried out in the semiconductor technology is familiar, the two metal layers are welded. A thermally, temporally and chemically stable connection is created between the Metal layers, the total thickness of which is chosen so that thermally induced mechanical Tensions between the semiconductor component and the carrier are compensated. Furthermore, mechanical shifts occur in a Thermokompressionsvor transition between the carrier and the semiconductor component avoided, so that this on inexpensive Way is adjustable.

Die Erfindung ist nicht auf das beschriebene Ausführungsbeispiel beschränkt, sondern auf andere Halbleiterbauelemente, z.B. Impattdioden, anwendbar. Dabei ist es günstig, wenn die zu kontaktierenden Flächen wenig strukturiert sind.The invention is not limited to the exemplary embodiment described, but can be used for other semiconductor components, e.g. Impatt diodes. It is it is beneficial if the surfaces to be contacted are poorly structured.

Claims (9)

Patentansprüche S Elektrischer Kontakt, bestehend aus einer auf einem Halbleiterbauelement (1) aufgebrachten ersten Metallschicht (4), die elektrisch leitend und im wesentlichen ganzflächig verbunden ist mit einer auf einem Träger (2) aufgebrachten zweiten Metallschicht (5), dadurch gekennzeichnet, daß die erste Metallschicht (4) und die zweite Metallschicht (5) im wesentlichen aus dem gleichen Material bestehen und daß die erste und die zweite Metallschicht durch einen Schweißvorgang verbunden sind.Claims S Electrical contact, consisting of one on one Semiconductor component (1) applied first metal layer (4), the electrically is conductive and essentially connected over the entire surface with one on a carrier (2) applied second metal layer (5), characterized in that the first Metal layer (4) and the second metal layer (5) essentially of the same Material are made and that the first and the second metal layer by a welding process are connected. 2. Kontakt nach Anspruch 1, dadurch gekennzeichnet, daß das Halbleiterbauelement (1) als Halbleiterlaser ausgebildet ist.2. Contact according to claim 1, characterized in that the semiconductor component (1) is designed as a semiconductor laser. 3. Kontakt nach Anspruch 2, dadurch gekennzeichnet, daß der Halbleiterlaser ein III-V-Halbleiterlaser ist.3. Contact according to claim 2, characterized in that the semiconductor laser is a III-V semiconductor laser. 4. Kontakt nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Träger (2) als Wärmesenke ausgebildet ist.4. Contact according to one of the preceding claims, characterized in that that the carrier (2) is designed as a heat sink. 5. Kontakt nach einem der vorhbrgehenden Ansprüche, dadurch gekennzeichnet, daß Dicke und Material der ersten und der zweiten Metallschicht derart gewählt sind, daß zumindest die im Arbeitstemperaturbereich des Halbleiterbauelements auftretenden mechanischen Spannungen zwischen dem Halbleiterbauelement und dem Träger ausgleichbar sind.5. Contact according to one of the preceding claims, characterized in that that the thickness and material of the first and the second metal layer are selected in such a way that that at least those occurring in the working temperature range of the semiconductor component mechanical stresses between the semiconductor component and the carrier can be compensated are. 6. Kontakt nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die erste und die zweite Metallschicht aus einem Material bestehen, daß unter Anwendung von Druck und Wärme verschweißbar ist.6. Contact according to one of the preceding claims, characterized in that that the first and second metal layers are made of a material that under Application of pressure and heat is weldable. 7. Kontakt nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die erste und die zweite Metallschicht im wesentlichen aus Gold bestehen.7. Contact according to one of the preceding claims, characterized in that that the first and second metal layers consist essentially of gold. 8. Kontakt nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß das Halbleiterbauelement (1) als III-V-Halbleiterlaser ausgebildet ist, dessen eine Oberflächenseite eine grabenförmige Vertiefung aufweist, die durch die erste Metallschicht (4) im wesentlichen aufgefüllt ist, und daß die erste und zweite Metallschicht aus einer durch Thermokompression verschweißbaren Goldlegierung bestehen.8. Contact according to one of the preceding claims, characterized in that that the semiconductor component (1) is designed as a III-V semiconductor laser, its one surface side has a trench-shaped depression through the first Metal layer (4) is essentially filled, and that the first and second metal layers consist of a gold alloy that can be welded by thermocompression. 9. Kontakt nach Anspruch 8, dadurch gekennzeichnet, daß die Goldlegierung mindestens 99 Gewichtsprozent Gold enthält.9. Contact according to claim 8, characterized in that the gold alloy Contains at least 99 percent gold by weight.
DE19823231732 1982-08-26 1982-08-26 Electrical contact Ceased DE3231732A1 (en)

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DE2034681A1 (en) * 1969-07-23 1971-04-01 Motorola Inc Semiconductor wafer with pre-formed golden solder areas
US3585461A (en) * 1968-02-19 1971-06-15 Westinghouse Electric Corp High reliability semiconductive devices and integrated circuits
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US3585461A (en) * 1968-02-19 1971-06-15 Westinghouse Electric Corp High reliability semiconductive devices and integrated circuits
DE2034681A1 (en) * 1969-07-23 1971-04-01 Motorola Inc Semiconductor wafer with pre-formed golden solder areas
DE2040929A1 (en) * 1969-08-21 1971-03-04 Texas Instruments Inc Ohmic contact arrangement for semiconductor devices
DE2822146A1 (en) * 1978-05-20 1979-11-22 Licentia Gmbh SEMICONDUCTOR LASER AND METHOD FOR PRODUCING A SEMICONDUCTOR LASER

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FR2656193A1 (en) * 1986-12-19 1991-06-21 Telecommunications Sa Method of mounting a semiconductor chip on a thermal dissipation and electrical connection support

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