DE3171772D1 - Method for fabricating a solid-state imaging device using photoconductive film - Google Patents

Method for fabricating a solid-state imaging device using photoconductive film

Info

Publication number
DE3171772D1
DE3171772D1 DE8181301283T DE3171772T DE3171772D1 DE 3171772 D1 DE3171772 D1 DE 3171772D1 DE 8181301283 T DE8181301283 T DE 8181301283T DE 3171772 T DE3171772 T DE 3171772T DE 3171772 D1 DE3171772 D1 DE 3171772D1
Authority
DE
Germany
Prior art keywords
fabricating
solid
imaging device
state imaging
photoconductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181301283T
Other languages
English (en)
Inventor
Norio Koike
Toru Baji
Toshihisa Tsukada
Hideaki Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3171772D1 publication Critical patent/DE3171772D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
DE8181301283T 1980-03-26 1981-03-25 Method for fabricating a solid-state imaging device using photoconductive film Expired DE3171772D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55037463A JPS5928065B2 (ja) 1980-03-26 1980-03-26 固体撮像素子の製造方法

Publications (1)

Publication Number Publication Date
DE3171772D1 true DE3171772D1 (en) 1985-09-19

Family

ID=12498211

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181301283T Expired DE3171772D1 (en) 1980-03-26 1981-03-25 Method for fabricating a solid-state imaging device using photoconductive film

Country Status (5)

Country Link
US (1) US4364973A (de)
EP (1) EP0037244B1 (de)
JP (1) JPS5928065B2 (de)
CA (1) CA1153091A (de)
DE (1) DE3171772D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471371A (en) * 1981-01-06 1984-09-11 Fuji Xerox Co., Ltd. Thin film image pickup element
DE3544182A1 (de) * 1985-12-13 1987-06-19 Heimann Gmbh Kontaktbildsensorzeile
KR930007532B1 (ko) * 1990-07-12 1993-08-12 금성일렉트론 주식회사 Soi 구조를 이용한 3차원 ccd 영상소자 및 그 제조방법
JP4419264B2 (ja) * 2000-03-31 2010-02-24 ソニー株式会社 固体撮像装置
US6255134B1 (en) * 2000-04-24 2001-07-03 Pulnix America, Inc. Method for making high-frame-rate CCD imaging devices from otherwise ordinary and inexpensive CCD devices
KR100630679B1 (ko) * 2003-12-17 2006-10-02 삼성전자주식회사 포토 다이오드 및 이의 제조 방법
JP4130211B2 (ja) * 2006-05-31 2008-08-06 三洋電機株式会社 撮像装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5293285A (en) * 1976-02-02 1977-08-05 Hitachi Ltd Structure for semiconductor device
JPS52144992A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Light receiving element
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
US4181755A (en) * 1978-11-21 1980-01-01 Rca Corporation Thin film pattern generation by an inverse self-lifting technique

Also Published As

Publication number Publication date
JPS5928065B2 (ja) 1984-07-10
JPS56134783A (en) 1981-10-21
EP0037244A3 (en) 1982-09-08
CA1153091A (en) 1983-08-30
EP0037244A2 (de) 1981-10-07
US4364973A (en) 1982-12-21
EP0037244B1 (de) 1985-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee