DE3170405D1 - An electron beam exposure method - Google Patents
An electron beam exposure methodInfo
- Publication number
- DE3170405D1 DE3170405D1 DE8181303792T DE3170405T DE3170405D1 DE 3170405 D1 DE3170405 D1 DE 3170405D1 DE 8181303792 T DE8181303792 T DE 8181303792T DE 3170405 T DE3170405 T DE 3170405T DE 3170405 D1 DE3170405 D1 DE 3170405D1
- Authority
- DE
- Germany
- Prior art keywords
- electron beam
- exposure method
- beam exposure
- electron
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55117412A JPS5740927A (en) | 1980-08-26 | 1980-08-26 | Exposing method of electron beam |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3170405D1 true DE3170405D1 (en) | 1985-06-13 |
Family
ID=14711002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181303792T Expired DE3170405D1 (en) | 1980-08-26 | 1981-08-20 | An electron beam exposure method |
Country Status (5)
Country | Link |
---|---|
US (1) | US4413187A (de) |
EP (1) | EP0047104B1 (de) |
JP (1) | JPS5740927A (de) |
DE (1) | DE3170405D1 (de) |
IE (1) | IE52096B1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59124719A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | 電子ビ−ム露光装置 |
JPS60201626A (ja) * | 1984-03-27 | 1985-10-12 | Canon Inc | 位置合わせ装置 |
JPS6182428A (ja) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | 電荷ビ−ム光学鏡筒のレンズ調整方法 |
GB2197751A (en) * | 1986-11-24 | 1988-05-25 | Philips Electronic Associated | Variable shaped spot electron beam pattern generator |
JP3094927B2 (ja) * | 1996-11-19 | 2000-10-03 | 日本電気株式会社 | 電子線露光装置及びその露光方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1439900A1 (de) * | 1964-12-07 | 1968-12-19 | Elektromat Werk Fuer Automatis | Verfahren und Einrichtung zum Zentrieren des Elektronenstrahles bei Elektronenstrahl-Bearbeitungsgeraeten |
US3644700A (en) * | 1969-12-15 | 1972-02-22 | Ibm | Method and apparatus for controlling an electron beam |
US3894271A (en) * | 1973-08-31 | 1975-07-08 | Ibm | Method and apparatus for aligning electron beams |
US3900736A (en) * | 1974-01-28 | 1975-08-19 | Ibm | Method and apparatus for positioning a beam of charged particles |
GB1605087A (en) * | 1977-05-31 | 1981-12-16 | Rikagaku Kenkyusho | Method for shaping a beam of electrically charged particles |
US4243866A (en) * | 1979-01-11 | 1981-01-06 | International Business Machines Corporation | Method and apparatus for forming a variable size electron beam |
-
1980
- 1980-08-26 JP JP55117412A patent/JPS5740927A/ja active Granted
-
1981
- 1981-08-20 DE DE8181303792T patent/DE3170405D1/de not_active Expired
- 1981-08-20 EP EP81303792A patent/EP0047104B1/de not_active Expired
- 1981-08-24 US US06/295,584 patent/US4413187A/en not_active Expired - Lifetime
- 1981-08-25 IE IE1949/81A patent/IE52096B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0047104A1 (de) | 1982-03-10 |
JPH0135494B2 (de) | 1989-07-25 |
US4413187A (en) | 1983-11-01 |
JPS5740927A (en) | 1982-03-06 |
IE52096B1 (en) | 1987-06-10 |
EP0047104B1 (de) | 1985-05-08 |
IE811949L (en) | 1982-02-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |