DE3129327C2 - Device for applying thin layers by cathode sputtering - Google Patents
Device for applying thin layers by cathode sputteringInfo
- Publication number
- DE3129327C2 DE3129327C2 DE19813129327 DE3129327A DE3129327C2 DE 3129327 C2 DE3129327 C2 DE 3129327C2 DE 19813129327 DE19813129327 DE 19813129327 DE 3129327 A DE3129327 A DE 3129327A DE 3129327 C2 DE3129327 C2 DE 3129327C2
- Authority
- DE
- Germany
- Prior art keywords
- cathode
- line
- carrier
- sputtering
- cathodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Die Erfindung geht aus von einer Vorrichtung zum Aufbringen dünner Schichten durch Kathodenzerstäubung auf ein flächenförmiges Substrat. Zur Vorrichtung gehören Substratträger, Kathodenträger, zumindest eine langgestreckte Linienkathode und eine Einrichtung zur Zuführung von Zerstäubungsgas. Die Einrichtung zur Zuführung von Zerstäubungsgas besitzt am Ende durch Deckel verschlossene Zuführungsrohre. Diese sind seitlich neben und geometrisch parallel zu der Linienkathode angeordnet sowie mit äquidistanten Düsenbohrungen versehen. Neben der Linienkathode sind zwei gleiche Zuführungsrohre vorgesehen, z.B. an jeder Seite eines. Die Zuführungsrohre verlaufen gasströmungsmäßig zueinander antiparallel und im übrigen symmetrisch zur Achse der Linienkathode. Die Düsenbohrungen sind auf die zugeordnete Linienkathode oder deren Kathodenträger gerichtet. Das Zerstäubungsgas ist den beiden Zuführungsrohren mit gleichem statischen Eintrittsdruck zuführbar. Man erreicht so eine sehr gleichmäßige Beschichtung des Substrates.The invention is based on a device for applying thin layers by cathode sputtering to a flat substrate. The device includes a substrate carrier, a cathode carrier, at least one elongated line cathode and a device for supplying sputtering gas. The device for supplying atomizing gas has supply pipes closed by covers at the end. These are arranged laterally next to and geometrically parallel to the line cathode and are provided with equidistant nozzle bores. In addition to the line cathode, two identical feed tubes are provided, e.g. one on each side. The supply tubes run antiparallel to one another in terms of gas flow and otherwise symmetrically to the axis of the line cathode. The nozzle bores are directed towards the assigned line cathode or its cathode carrier. The atomizing gas can be fed to the two feed pipes with the same static inlet pressure. A very uniform coating of the substrate is achieved in this way.
Description
rl antiparallel und symmetrisch zur Achse 11 der zugeord-rl antiparallel and symmetrical to axis 11 of the associated
I neten Linienkathode 5. Die entsprechenden entgegenfß I neten line cathode 5. The corresponding counter feet gesetzten Strömungsrichtungen des Zerstäubungsgases If sind in F i g. 2 durch Pfeile angedeutet worden. Die DO-Set directions of flow of the atomizing gas If are shown in FIG. 2 has been indicated by arrows. The DO-
II senbohrungen 10 dieser Zuführungsrohre 8,9 sind auf ff die zwischen ihnen angeordnete Linienkathode 5 ge-II senbohrungen 10 of these feed pipes 8.9 are on ff the line cathode 5 arranged between them
'& richtet Die Anordnung ist im übrigen so getroffen, daß ';■$. das Zerstäubungsgas den beiden Zuführungsrohren 8,9 S jeder Linienkathode 5 bzw. jedes Kathodenträgers 4 mit f'i gleichem statischen Eintrittsdruck zuführbar ist '& directs The arrangement is made in such a way that '; ■ $. the atomizing gas can be fed to the two feed tubes 8, 9 S of each line cathode 5 or each cathode carrier 4 with the same static inlet pressure f'i
%% Im Ausführungsbeispiel sind leistenförmige Katho-In the exemplary embodiment, strip-shaped cathodes are
denträger 4 vorgesehen, auf denen beidseitig eine Linienkathode 5 angeordnet ist Die Anordnung ist daher so getroffen, daß zwischen benachbarten Linienkathoden 5 zwei identisch gleiche Zuführungsrohre 8,9 anga- ordnet sind. Der Durchmesser (d) der Zuführungsrohre ist kleiner als die Dicke (D) des Kathodenträgers 4 und die Zuführungsrohre 8, 9 im Bereich der Mittelebene des Kathodenträgers 4 angeordnet Sie weisen, wie man insbesondere in der Fig. 1 erkennt, mit ihren Düsen-■ bohrungen 10 auf den Kathodenträger 4 hin. Es ist möglich, gleichsam verdoppelnd, mehr als zwei Zuführungsrohre 8,9 pro Linienkathode 5 vorzusehen.data carriers 4 are provided, on which a line cathode 5 is arranged on both sides. The arrangement is therefore made such that two identically identical supply pipes 8, 9 are arranged between adjacent line cathodes 5. The diameter (d) of the feed tubes is smaller than the thickness (D) of the cathode carrier 4 and the feed tubes 8, 9 are arranged in the region of the central plane of the cathode carrier 4 holes 10 on the cathode support 4 out. It is possible, doubling as it were, to provide more than two feed tubes 8, 9 per line cathode 5.
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Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19813129327 DE3129327C2 (en) | 1981-07-24 | 1981-07-24 | Device for applying thin layers by cathode sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19813129327 DE3129327C2 (en) | 1981-07-24 | 1981-07-24 | Device for applying thin layers by cathode sputtering |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3129327A1 DE3129327A1 (en) | 1983-02-10 |
DE3129327C2 true DE3129327C2 (en) | 1985-09-12 |
Family
ID=6137691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19813129327 Expired DE3129327C2 (en) | 1981-07-24 | 1981-07-24 | Device for applying thin layers by cathode sputtering |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3129327C2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4412541B4 (en) * | 1993-04-22 | 2011-03-10 | Oerlikon Trading Ag, Trübbach | Gas inlet system and method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3331707A1 (en) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | METHOD AND DEVICE FOR REACTIVELY SPRAYING CONNECTIONS FROM METALS AND SEMICONDUCTORS |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3976555A (en) * | 1975-03-20 | 1976-08-24 | Coulter Information Systems, Inc. | Method and apparatus for supplying background gas in a sputtering chamber |
-
1981
- 1981-07-24 DE DE19813129327 patent/DE3129327C2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4412541B4 (en) * | 1993-04-22 | 2011-03-10 | Oerlikon Trading Ag, Trübbach | Gas inlet system and method |
Also Published As
Publication number | Publication date |
---|---|
DE3129327A1 (en) | 1983-02-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |