DE3070430D1 - Photoelectric device - Google Patents

Photoelectric device

Info

Publication number
DE3070430D1
DE3070430D1 DE8080304490T DE3070430T DE3070430D1 DE 3070430 D1 DE3070430 D1 DE 3070430D1 DE 8080304490 T DE8080304490 T DE 8080304490T DE 3070430 T DE3070430 T DE 3070430T DE 3070430 D1 DE3070430 D1 DE 3070430D1
Authority
DE
Germany
Prior art keywords
photoelectric device
photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080304490T
Other languages
German (de)
English (en)
Inventor
Yoshinori Imamura
Yasuo Tanaka
Saburo Ataka
Tadaaki Hirai
Yukio Takasaki
Elichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3070430D1 publication Critical patent/DE3070430D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE8080304490T 1979-12-14 1980-12-12 Photoelectric device Expired DE3070430D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16154979A JPS5685876A (en) 1979-12-14 1979-12-14 Photoelectric converter

Publications (1)

Publication Number Publication Date
DE3070430D1 true DE3070430D1 (en) 1985-05-09

Family

ID=15737214

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080304490T Expired DE3070430D1 (en) 1979-12-14 1980-12-12 Photoelectric device

Country Status (4)

Country Link
US (1) US4556816A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0031663B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5685876A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3070430D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103477A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Photoelectric conversion element
JPS5774945A (en) * 1980-10-27 1982-05-11 Fuji Photo Film Co Ltd Photoconductive film for image pick-up tube
JPS5918685A (ja) * 1982-07-21 1984-01-31 Matsushita Electric Ind Co Ltd 光電変換素子の製造方法
JPS60227341A (ja) * 1984-04-25 1985-11-12 Toshiba Corp 撮像管の光導電タ−ゲツト
JPH0658951B2 (ja) * 1985-07-17 1994-08-03 オリンパス光学工業株式会社 積層型固体撮像装置
EP0365702A1 (de) * 1988-10-26 1990-05-02 Heimann Optoelectronics GmbH Digitaler Stellungsgeber
EP1837930A1 (en) * 2001-09-04 2007-09-26 Sony Deutschland GmbH Photovoltaic device and method for preparing the same
DE10155346C1 (de) * 2001-11-10 2003-06-12 Fraunhofer Ges Forschung Solarzelle sowie Verfahren zu deren Herstellung
CN110350088B (zh) * 2019-05-31 2021-03-23 西安电子科技大学 一种基于CH3NH3PbI3和Al2O3材料的MOS电容光敏器件及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240809B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-04-07 1977-10-14
JPS5246772B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-21 1977-11-28
SU498662A1 (ru) * 1973-07-23 1976-01-05 Предприятие П/Я М-5273 Мишень видикона
JPS579179B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-08-25 1982-02-19
FR2331887A1 (fr) * 1975-11-17 1977-06-10 Hitachi Ltd Dispositif photo-electrique
JPS5823699B2 (ja) * 1975-12-19 1983-05-17 松下電器産業株式会社 サツゾウカン
JPS54150995A (en) * 1978-05-19 1979-11-27 Hitachi Ltd Photo detector
FR2441264A1 (fr) * 1978-11-08 1980-06-06 Hitachi Ltd Ecran sensible aux radiations
JPS56103477A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Photoelectric conversion element
JPS56152280A (en) * 1980-04-25 1981-11-25 Hitachi Ltd Light receiving surface

Also Published As

Publication number Publication date
EP0031663A2 (en) 1981-07-08
EP0031663A3 (en) 1982-04-21
JPS5685876A (en) 1981-07-13
US4556816A (en) 1985-12-03
JPS6322078B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-05-10
EP0031663B1 (en) 1985-04-03

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee