DE3068001D1 - A semiconductor device having a plurality of semiconductor chip portions - Google Patents

A semiconductor device having a plurality of semiconductor chip portions

Info

Publication number
DE3068001D1
DE3068001D1 DE8080300869T DE3068001T DE3068001D1 DE 3068001 D1 DE3068001 D1 DE 3068001D1 DE 8080300869 T DE8080300869 T DE 8080300869T DE 3068001 T DE3068001 T DE 3068001T DE 3068001 D1 DE3068001 D1 DE 3068001D1
Authority
DE
Germany
Prior art keywords
chip portions
semiconductor device
semiconductor
semiconductor chip
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080300869T
Other languages
German (de)
English (en)
Inventor
Masahiro Hayakawa
Yutaka Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3068001D1 publication Critical patent/DE3068001D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10W44/20—
    • H10W90/00—
    • H10W44/226—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5445—
    • H10W72/5475—
DE8080300869T 1979-03-30 1980-03-20 A semiconductor device having a plurality of semiconductor chip portions Expired DE3068001D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3822779A JPS55130178A (en) 1979-03-30 1979-03-30 Semiconductor device

Publications (1)

Publication Number Publication Date
DE3068001D1 true DE3068001D1 (en) 1984-07-05

Family

ID=12519413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080300869T Expired DE3068001D1 (en) 1979-03-30 1980-03-20 A semiconductor device having a plurality of semiconductor chip portions

Country Status (4)

Country Link
US (1) US4359754A (cg-RX-API-DMAC10.html)
EP (1) EP0018091B1 (cg-RX-API-DMAC10.html)
JP (1) JPS55130178A (cg-RX-API-DMAC10.html)
DE (1) DE3068001D1 (cg-RX-API-DMAC10.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56147461A (en) * 1980-04-17 1981-11-16 Nec Corp Semiconductor device
US4518982A (en) * 1981-02-27 1985-05-21 Motorola, Inc. High current package with multi-level leads
US4536469A (en) * 1981-11-23 1985-08-20 Raytheon Company Semiconductor structures and manufacturing methods
JPH0758782B2 (ja) * 1986-03-19 1995-06-21 株式会社東芝 半導体装置
JPH088269B2 (ja) * 1986-10-22 1996-01-29 シーメンス、アクチエンゲゼルシヤフト 半導体デバイス
US5060048A (en) * 1986-10-22 1991-10-22 Siemens Aktiengesellschaft & Semikron GmbH Semiconductor component having at least one power mosfet
JPH0195826U (cg-RX-API-DMAC10.html) * 1987-12-17 1989-06-26
US5283452A (en) * 1992-02-14 1994-02-01 Hughes Aircraft Company Distributed cell monolithic mircowave integrated circuit (MMIC) field-effect transistor (FET) amplifier
JP3287279B2 (ja) 1997-09-25 2002-06-04 日本電気株式会社 半導体チップ、および該半導体チップが実装された半導体装置
US5998817A (en) * 1997-11-03 1999-12-07 Raytheon Company High power prematched MMIC transistor with improved ground potential continuity
US6169331B1 (en) 1998-08-28 2001-01-02 Micron Technology, Inc. Apparatus for electrically coupling bond pads of a microelectronic device
US6873044B2 (en) * 2000-09-11 2005-03-29 Xytrans, Inc. Microwave monolithic integrated circuit package
US6770982B1 (en) 2002-01-16 2004-08-03 Marvell International, Ltd. Semiconductor device power distribution system and method
US8258616B1 (en) 2002-01-16 2012-09-04 Marvell International Ltd. Semiconductor dice having a shielded area created under bond wires connecting pairs of bonding pads
US6861762B1 (en) * 2002-05-01 2005-03-01 Marvell Semiconductor Israel Ltd. Flip chip with novel power and ground arrangement
CN100444371C (zh) 2004-09-13 2008-12-17 国际整流器公司 功率半导体封装
US11574854B2 (en) 2020-04-08 2023-02-07 National Research Council Of Canada Distributed inductance integrated field effect transistor structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3336508A (en) * 1965-08-12 1967-08-15 Trw Semiconductors Inc Multicell transistor
US3893159A (en) * 1974-02-26 1975-07-01 Rca Corp Multiple cell high frequency power semiconductor device having bond wires of differing inductance from cell to cell
US4107728A (en) * 1977-01-07 1978-08-15 Varian Associates, Inc. Package for push-pull semiconductor devices
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads

Also Published As

Publication number Publication date
EP0018091A1 (en) 1980-10-29
JPS55130178A (en) 1980-10-08
EP0018091B1 (en) 1984-05-30
US4359754A (en) 1982-11-16
JPS6157715B2 (cg-RX-API-DMAC10.html) 1986-12-08

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