DE3067780D1 - Method to adjust the temperature coefficient of a reference diode and a reference diode so adjusted - Google Patents
Method to adjust the temperature coefficient of a reference diode and a reference diode so adjustedInfo
- Publication number
- DE3067780D1 DE3067780D1 DE8080401617T DE3067780T DE3067780D1 DE 3067780 D1 DE3067780 D1 DE 3067780D1 DE 8080401617 T DE8080401617 T DE 8080401617T DE 3067780 T DE3067780 T DE 3067780T DE 3067780 D1 DE3067780 D1 DE 3067780D1
- Authority
- DE
- Germany
- Prior art keywords
- reference diode
- adjust
- adjusted
- temperature coefficient
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W40/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7931972A FR2472839A1 (fr) | 1979-12-28 | 1979-12-28 | Procede d'ajustement du coefficient de temperature d'une diode a jonction et diode de reference |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3067780D1 true DE3067780D1 (en) | 1984-06-14 |
Family
ID=9233278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8080401617T Expired DE3067780D1 (en) | 1979-12-28 | 1980-11-12 | Method to adjust the temperature coefficient of a reference diode and a reference diode so adjusted |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0032069B1 (enExample) |
| DE (1) | DE3067780D1 (enExample) |
| FR (1) | FR2472839A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6080889A (en) * | 1998-04-01 | 2000-06-27 | Albemarle Corporation | Production of tertiary amine oxides |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3798510A (en) * | 1973-02-21 | 1974-03-19 | Us Army | Temperature compensated zener diode for transient suppression |
| US4053924A (en) * | 1975-02-07 | 1977-10-11 | California Linear Circuits, Inc. | Ion-implanted semiconductor abrupt junction |
| JPS5290273A (en) * | 1976-01-23 | 1977-07-29 | Hitachi Ltd | Semiconductor device |
| DE2648109C2 (de) * | 1976-10-23 | 1985-08-14 | Henkel KGaA, 4000 Düsseldorf | 4-Isopropyl-5,5-dimethyl-1,3-dioxane enthaltende Riechstoffkompositionen sowie 4-Isopropyl-5,5-dimethyl-1,3-dioxane als solche |
-
1979
- 1979-12-28 FR FR7931972A patent/FR2472839A1/fr active Granted
-
1980
- 1980-11-12 EP EP80401617A patent/EP0032069B1/fr not_active Expired
- 1980-11-12 DE DE8080401617T patent/DE3067780D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0032069B1 (fr) | 1984-05-09 |
| FR2472839A1 (fr) | 1981-07-03 |
| FR2472839B1 (enExample) | 1981-11-20 |
| EP0032069A1 (fr) | 1981-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8339 | Ceased/non-payment of the annual fee |