DE3067386D1 - Capacitor with four-pole structure, the integrity of which can be controlled by direct current tests - Google Patents
Capacitor with four-pole structure, the integrity of which can be controlled by direct current testsInfo
- Publication number
- DE3067386D1 DE3067386D1 DE8080430026T DE3067386T DE3067386D1 DE 3067386 D1 DE3067386 D1 DE 3067386D1 DE 8080430026 T DE8080430026 T DE 8080430026T DE 3067386 T DE3067386 T DE 3067386T DE 3067386 D1 DE3067386 D1 DE 3067386D1
- Authority
- DE
- Germany
- Prior art keywords
- integrity
- capacitor
- controlled
- direct current
- pole structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
- G01R31/2639—Circuits therefor for testing other individual devices for testing field-effect devices, e.g. of MOS-capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP80430026A EP0053213B1 (de) | 1980-11-28 | 1980-11-28 | Vierpolkondensator, dessen Integrität mit Hilfe eines Gleichstromtests kontrolliert werden kann |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3067386D1 true DE3067386D1 (en) | 1984-05-10 |
Family
ID=8187425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080430026T Expired DE3067386D1 (en) | 1980-11-28 | 1980-11-28 | Capacitor with four-pole structure, the integrity of which can be controlled by direct current tests |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0053213B1 (de) |
JP (1) | JPS5793561A (de) |
DE (1) | DE3067386D1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1310078C (en) * | 1987-11-27 | 1992-11-10 | American Telephone And Telegraph Company | Voltage controlled variable capacitor |
DE3805800C2 (de) * | 1988-02-24 | 1995-12-07 | Siemens Ag | Verfahren zur Bestimmung der elektrischen Belastung von MIS-Strukturen bei der Herstellung von MIS-Strukturen enthaltenden Bauelementen auf einem Substrat |
SE470415B (sv) * | 1992-07-06 | 1994-02-14 | Ericsson Telefon Ab L M | Kondensator med hög kapacitans i ett integrerat funktionsblock eller en integrerad krets, förfarande för framställning av kondensatorn och användning av kondensatorn som en integrerad avkopplingskondensator |
JP3369296B2 (ja) * | 1994-03-25 | 2003-01-20 | 三菱電機株式会社 | Mos型コンデンサ |
JP2006059939A (ja) * | 2004-08-19 | 2006-03-02 | Fujitsu Ltd | Misキャパシタおよびmisキャパシタ作成方法 |
JP4641396B2 (ja) * | 2004-09-02 | 2011-03-02 | Okiセミコンダクタ株式会社 | 薄膜コンデンサとその製造方法 |
CN101494216B (zh) * | 2008-01-25 | 2011-02-02 | 中芯国际集成电路制造(上海)有限公司 | 用于对集成电路内层电介质进行可靠性分析的测试用结构 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3611070A (en) * | 1970-06-15 | 1971-10-05 | Gen Electric | Voltage-variable capacitor with controllably extendible pn junction region |
US4001869A (en) * | 1975-06-09 | 1977-01-04 | Sprague Electric Company | Mos-capacitor for integrated circuits |
-
1980
- 1980-11-28 EP EP80430026A patent/EP0053213B1/de not_active Expired
- 1980-11-28 DE DE8080430026T patent/DE3067386D1/de not_active Expired
-
1981
- 1981-09-03 JP JP56137884A patent/JPS5793561A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
EP0053213B1 (de) | 1984-04-04 |
EP0053213A1 (de) | 1982-06-09 |
JPS5793561A (en) | 1982-06-10 |
JPS6348185B2 (de) | 1988-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |