DE2965924D1 - A method of making a semiconductor device - Google Patents

A method of making a semiconductor device

Info

Publication number
DE2965924D1
DE2965924D1 DE7979301778T DE2965924T DE2965924D1 DE 2965924 D1 DE2965924 D1 DE 2965924D1 DE 7979301778 T DE7979301778 T DE 7979301778T DE 2965924 T DE2965924 T DE 2965924T DE 2965924 D1 DE2965924 D1 DE 2965924D1
Authority
DE
Germany
Prior art keywords
making
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979301778T
Other languages
German (de)
English (en)
Inventor
Kazunari Shirai
Izumi Tanaka
Shinpei Tanaka
Keiji Nishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE2965924D1 publication Critical patent/DE2965924D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
DE7979301778T 1978-08-31 1979-08-30 A method of making a semiconductor device Expired DE2965924D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10676178A JPS5534444A (en) 1978-08-31 1978-08-31 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
DE2965924D1 true DE2965924D1 (en) 1983-08-25

Family

ID=14441882

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979301778T Expired DE2965924D1 (en) 1978-08-31 1979-08-30 A method of making a semiconductor device

Country Status (4)

Country Link
US (1) US4271582A (enExample)
EP (1) EP0008928B1 (enExample)
JP (1) JPS5534444A (enExample)
DE (1) DE2965924D1 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668973A (en) * 1978-06-19 1987-05-26 Rca Corporation Semiconductor device passivated with phosphosilicate glass over silicon nitride
USRE32351E (en) * 1978-06-19 1987-02-17 Rca Corporation Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer
US4364167A (en) * 1979-11-28 1982-12-21 General Motors Corporation Programming an IGFET read-only-memory
JPS5693367A (en) * 1979-12-20 1981-07-28 Fujitsu Ltd Manufacture of semiconductor device
JPS56108247A (en) * 1980-01-31 1981-08-27 Sanyo Electric Co Ltd Semiconductor device
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
US5371411A (en) * 1980-09-01 1994-12-06 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5552639A (en) * 1980-09-01 1996-09-03 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
JPS57126147A (en) * 1981-01-28 1982-08-05 Fujitsu Ltd Manufacture of semiconductor device
US4490737A (en) * 1981-03-16 1984-12-25 Fairchild Camera & Instrument Corp. Smooth glass insulating film over interconnects on an integrated circuit
US4455325A (en) * 1981-03-16 1984-06-19 Fairchild Camera And Instrument Corporation Method of inducing flow or densification of phosphosilicate glass for integrated circuits
US4363830A (en) * 1981-06-22 1982-12-14 Rca Corporation Method of forming tapered contact holes for integrated circuit devices
US4517729A (en) * 1981-07-27 1985-05-21 American Microsystems, Incorporated Method for fabricating MOS device with self-aligned contacts
US4492717A (en) * 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
US4413402A (en) * 1981-10-22 1983-11-08 Advanced Micro Devices, Inc. Method of manufacturing a buried contact in semiconductor device
US4420503A (en) * 1982-05-17 1983-12-13 Rca Corporation Low temperature elevated pressure glass flow/re-flow process
US4476621A (en) * 1983-02-01 1984-10-16 Gte Communications Products Corporation Process for making transistors with doped oxide densification
GB2140202A (en) * 1983-05-16 1984-11-21 Philips Electronic Associated Methods of manufacturing semiconductor devices
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
GB8401250D0 (en) * 1984-01-18 1984-02-22 British Telecomm Semiconductor fabrication
JPS60198847A (ja) * 1984-03-23 1985-10-08 Nec Corp 半導体装置およびその製造方法
US4515668A (en) * 1984-04-25 1985-05-07 Honeywell Inc. Method of forming a dielectric layer comprising a gettering material
US4606114A (en) * 1984-08-29 1986-08-19 Texas Instruments Incorporated Multilevel oxide as diffusion source
US4613556A (en) * 1984-10-18 1986-09-23 Xerox Corporation Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
US4686000A (en) * 1985-04-02 1987-08-11 Heath Barbara A Self-aligned contact process
US4789886A (en) * 1987-01-20 1988-12-06 General Instrument Corporation Method and apparatus for insulating high voltage semiconductor structures
EP0281140B1 (en) * 1987-03-04 1993-05-12 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing the same
JP2672537B2 (ja) * 1987-12-21 1997-11-05 株式会社東芝 不揮発性半導体装置の製造方法
JPH0687483B2 (ja) * 1988-02-13 1994-11-02 株式会社東芝 半導体装置
DE69031543T2 (de) * 1989-02-17 1998-04-09 Matsushita Electronics Corp Verfahren zum Herstellen einer Halbleitervorrichtung
JPH02237135A (ja) * 1989-03-10 1990-09-19 Fujitsu Ltd 半導体装置の製造方法
GB8907898D0 (en) * 1989-04-07 1989-05-24 Inmos Ltd Semiconductor devices and fabrication thereof
US5279990A (en) * 1990-03-02 1994-01-18 Motorola, Inc. Method of making a small geometry contact using sidewall spacers
US5258645A (en) * 1990-03-09 1993-11-02 Fujitsu Limited Semiconductor device having MOS transistor and a sidewall with a double insulator layer structure
US5381035A (en) * 1992-09-23 1995-01-10 Chen; Wenn-Jei Metal-to-metal antifuse including etch stop layer
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5780323A (en) * 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
EP0485086A1 (en) * 1990-10-31 1992-05-13 AT&T Corp. Dielectric layers for integrated circuits
JPH1117124A (ja) * 1997-06-24 1999-01-22 Toshiba Corp 半導体装置およびその製造方法
US6060766A (en) * 1997-08-25 2000-05-09 Advanced Micro Devices, Inc. Protection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layers
US6719015B2 (en) * 2002-01-04 2004-04-13 Ppl Technolgies, L.L.C. Apparatus and process for manufacturing a filled flexible pouch
US8669644B2 (en) * 2009-10-07 2014-03-11 Texas Instruments Incorporated Hydrogen passivation of integrated circuits

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3300339A (en) * 1962-12-31 1967-01-24 Ibm Method of covering the surfaces of objects with protective glass jackets and the objects produced thereby
GB1094068A (en) * 1963-12-26 1967-12-06 Rca Corp Semiconductive devices and methods of producing them
US3887407A (en) * 1967-02-03 1975-06-03 Hitachi Ltd Method of manufacturing semiconductor device with nitride oxide double layer film
US3615942A (en) * 1969-06-05 1971-10-26 Rca Corp Method of making a phosphorus glass passivated transistor
DE2040180B2 (de) * 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht
JPS4953776A (enExample) * 1972-09-27 1974-05-24
US4028150A (en) * 1973-05-03 1977-06-07 Ibm Corporation Method for making reliable MOSFET device
JPS506143A (enExample) * 1973-05-21 1975-01-22
US3909320A (en) * 1973-12-26 1975-09-30 Signetics Corp Method for forming MOS structure using double diffusion
US3986903A (en) * 1974-03-13 1976-10-19 Intel Corporation Mosfet transistor and method of fabrication
CA1008564A (en) * 1974-04-18 1977-04-12 Robert L. Luce Method of mos circuit fabrication
US3923559A (en) * 1975-01-13 1975-12-02 Bell Telephone Labor Inc Use of trapped hydrogen for annealing metal-oxide-semiconductor devices
JPS5946107B2 (ja) * 1975-06-04 1984-11-10 株式会社日立製作所 Ｍｉｓ型半導体装置の製造法
NL7506594A (nl) * 1975-06-04 1976-12-07 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
US4009058A (en) * 1975-06-16 1977-02-22 Rca Corporation Method of fabricating large area, high voltage PIN photodiode devices
US4151007A (en) * 1977-10-11 1979-04-24 Bell Telephone Laboratories, Incorporated Hydrogen annealing process for stabilizing metal-oxide-semiconductor structures
JPS5492175A (en) * 1977-12-29 1979-07-21 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
US4271582A (en) 1981-06-09
EP0008928B1 (en) 1983-07-20
JPS6237815B2 (enExample) 1987-08-14
JPS5534444A (en) 1980-03-11
EP0008928A1 (en) 1980-03-19

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee