DE2948223C2 - Optoelectronic semiconductor sensor - Google Patents

Optoelectronic semiconductor sensor

Info

Publication number
DE2948223C2
DE2948223C2 DE2948223A DE2948223A DE2948223C2 DE 2948223 C2 DE2948223 C2 DE 2948223C2 DE 2948223 A DE2948223 A DE 2948223A DE 2948223 A DE2948223 A DE 2948223A DE 2948223 C2 DE2948223 C2 DE 2948223C2
Authority
DE
Germany
Prior art keywords
sensor
optoelectronic semiconductor
semiconductor sensor
column
cylinder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2948223A
Other languages
German (de)
Other versions
DE2948223A1 (en
Inventor
Gerd Dr.-Ing. 6104 Seeheim Bock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE2948223A priority Critical patent/DE2948223C2/en
Publication of DE2948223A1 publication Critical patent/DE2948223A1/en
Application granted granted Critical
Publication of DE2948223C2 publication Critical patent/DE2948223C2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Description

Hierzu 1 Blatt Zeichnungen1 sheet of drawings

Die Erfindung geht aus von einem optoelektronischen Halbleitersensor nach dem Zwischenspaltenprinzip. The invention is based on an optoelectronic semiconductor sensor based on the inter-column principle.

Bekanntlich bestehen diese Halbleitersensoren aus vertikal angeordneten photoempfiwdlichen Sensorelementen mit dazwischenliegenden, lichtundurchlässigen (optisch abgedeckten) Speicherspalten, in welche nach der Integrationszeit das gesamte Ladungsmuster aus den Sensorelementen geschoben wird. Der photoempfindliche Sensortci! und der aus Speicherspalten bestehende Speicherte"!! haben etwa glcxhe Abmessungen, so daß für die Bildaufnahme nur die Hälfte der Fläche des Halbleitersensors zur Verfügunf steht und nur ca. 50% des einfallenden Lichtes in elektrische Ladungen umgewandelt wird. Dadurch ergibt sich eine relativ schlechte Empfindlichkeit.As is known, these semiconductor sensors consist of vertically arranged photo-sensitive sensor elements with intervening, opaque (optically covered) storage gaps, in which after the entire charge pattern is pushed out of the sensor elements during the integration time. The photosensitive one Sensortci! and the memory "!!" consisting of storage columns have approximately the same dimensions, so that only half of the area of the semiconductor sensor is available for image recording and only approx. 50% of the incident light is converted into electrical charges. This results in a relative bad sensitivity.

Der Erfindung liegt die Aufgabe zugrunde, eine Erhöhung der Empfindlichkeit des Halbleitersensors zu erreichen. The invention is based on the object of increasing the sensitivity of the semiconductor sensor.

Diese Aufgabe wird durch die im Patentanspruch 1 angegebenen Merkmale gelöst.This object is achieved by the features specified in claim 1.

Der erfindungsgemäße optoelektronische Halbleitersensor hat den Vorteil, daß der gesamte Lichtstrom auf die photoempfindlichen Sensorelemente fällt und somit eine Erhöhung der Empfindlichkeit um den Faktor 2 erreicht wird.The optoelectronic semiconductor sensor according to the invention has the advantage that the entire luminous flux on the photosensitive sensor element falls and thus an increase in sensitivity by a factor of 2 is achieved.

Ein Ausführungsbeispiel der Erfindung ist in der Zeichnung dargestellt und in der nachfolgenden Beschreibung näher erläutert. Es zeigtAn embodiment of the invention is shown in the drawing and in the following description explained in more detail. It shows

F i g. 1 einen erfindungsgemäßen optoelektronischen Halbleitersensor in Draufsicht,F i g. 1 an optoelectronic semiconductor sensor according to the invention in plan view,

F i g. 2 einen Ausschnitt des erfindungsgemäßen optoelektronischen Halbleitersensors im Querschnitt.F i g. 2 shows a section of the optoelectronic according to the invention Semiconductor sensor in cross section.

Der in F i g. 1 dargestellte nach dem Zwischenspaltenprinzip organisierte optoelektronische Halbleitersensor weist mehrere senkrecht untereinander angeordnete photoempfindliche Sensorelemente 1 auf. Für jede senkrechte Reihe von Sensorelementen 1 ist eine einzige, ebenfalls senkrechte Speicherspalte 2 vorhanden. Außerdem ist für alle Speicherspalten 2 ein gemeinsamer Ausleseteil 3 vorgesehen.The in F i g. 1 illustrated optoelectronic semiconductor sensor organized according to the inter-column principle has several photosensitive sensor elements 1 arranged vertically one below the other. For every vertical row of sensor elements 1, a single, likewise vertical storage column 2 is present. In addition, a common readout part 3 is provided for all of the storage columns 2.

Durch öffnen einer Torelektrode wird die Information aus den Sensorelementen 1 in die lichtundurchlässigen Speicherspalten 2 übertragen und aus diesen relativ langsam zeilenweise in das ebenfalls lichtundurchlässige Ausleseteil 3 geschoben. Aus diesem Teil 3 wird die Information sehr schnell zum Ausgang 4 übertragen. InBy opening a gate electrode the information transferred from the sensor elements 1 into the opaque storage gaps 2 and from these relatively slowly pushed line by line into the readout part 3, which is also opaque. This part 3 becomes the Transfer information very quickly to output 4. In

Claims (2)

Patentansprüche:Patent claims: 1. Optoelektronischer Halbleitersensor nach dem Zwischenspaltenprinzip, dadurch gekennzeichnet, daß auf der aus Sensorteil und Speicherteil bestehenden Bildaufnahmefläche ein Zylinderlinsenraster derart angeordnet ist, daß der i. w. senkrecht auf den Haltleitersensor einfallende gesamte Lichtstrom nur auf die photoempfindlichen Elemente des Sensorteils auftrifft.1. Optoelectronic semiconductor sensor based on the inter-column principle, characterized in that that on the image recording surface consisting of the sensor part and the memory part, a cylindrical lens grid is arranged such that the i. w. the entire incident perpendicular to the semiconductor sensor Luminous flux only hits the photosensitive elements of the sensor part. 2. Optoelektronischer Halbleitersensor nach Anspruch 1, dadurch gekennzeichnet, daß das Zylinderlinsenraster aus streifenförmigen, den spaltenförmig angeordneten photoempfindlichen Elementen entsprechenden Linsen besteht, welche in der Mitte der Spalten des Speicherteils aneinanderstoßen.2. Optoelectronic semiconductor sensor according to claim 1, characterized in that the cylindrical lens grid from strip-shaped, the column-shaped arranged photosensitive elements corresponding lenses, which in the middle of the columns of the memory part abut one another. F i g. 1 sind diese Verschiebungsrichtungen durch Pfeile angedeutetF i g. 1 these directions of displacement are indicated by arrows Wie man leicht erkennen kann, steht für die Bildaufnahme nur die Hälfte der Fläche zur Verfügung, so daß diese Halbleitersensoren relativ schiechte Empfindlichkeit haben. Um diesen Nachteil zu vermeiden, ist ein Zylinderünsenraster 6 auf dem aus Sensorteil und Speicherteil bestehenden Halbleitersensoren vorgesehen, welches in F i g. 1 andeutungsweise eingezeichnet istAs you can easily see, only half of the area is available for taking pictures, so that these semiconductor sensors have relatively poor sensitivity. To avoid this disadvantage is a Cylinder louvre 6 on the sensor part and memory part existing semiconductor sensors provided, which in F i g. 1 is indicated as an indication ίο In F i g. 2 ist ein Teil des optoelektronischen Halbleitersensors mit dem Zylinderünsenraster 6 im Schnitt dargestellt. Die Zylinderlinsen sind dabei spaltenweise vor den Sensorelementen 1 so angeordnet, daß der gesamte Lichtstrom (Pfeile) auf die Sensorelemente 1 gelenkt wird. Dadurch wird eine Verdoppelung der Empfindlichkeit erreichtίο In F i g. 2 is part of the optoelectronic semiconductor sensor shown with the cylinder nozzle grid 6 in section. The cylinder lenses are column-wise Arranged in front of the sensor elements 1 in such a way that the entire luminous flux (arrows) is directed onto the sensor elements 1 will. This doubles the sensitivity
DE2948223A 1979-11-30 1979-11-30 Optoelectronic semiconductor sensor Expired DE2948223C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2948223A DE2948223C2 (en) 1979-11-30 1979-11-30 Optoelectronic semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2948223A DE2948223C2 (en) 1979-11-30 1979-11-30 Optoelectronic semiconductor sensor

Publications (2)

Publication Number Publication Date
DE2948223A1 DE2948223A1 (en) 1981-06-04
DE2948223C2 true DE2948223C2 (en) 1986-07-10

Family

ID=6087258

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2948223A Expired DE2948223C2 (en) 1979-11-30 1979-11-30 Optoelectronic semiconductor sensor

Country Status (1)

Country Link
DE (1) DE2948223C2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5829274A (en) * 1981-08-14 1983-02-21 Olympus Optical Co Ltd Image pickup device
EP0079762A3 (en) * 1981-11-12 1985-01-30 Tactical And Navigational Systems Limited Photovoltaic panels and methods of making them
DE3537119A1 (en) * 1985-10-18 1987-04-23 Battelle Institut E V Infrared detector array having an improved area coverage, and method for producing it
DE4225512C1 (en) * 1992-08-01 1994-02-17 Bosch Gmbh Robert Opto-electronic radiation detector, e.g. for IR communications system - uses semi-ellipsoidal lens coupled to optical sensor via intermediate cylindrical disc
DE4329665C1 (en) * 1993-09-02 1994-05-11 Se Scient Electronics Muenchen EM radiation sensor for monitoring UV radiation dosage - has lens system focussing received radiation onto detector providing electrical signal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NICHTS-ERMITTELT

Also Published As

Publication number Publication date
DE2948223A1 (en) 1981-06-04

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