DE2832040A1 - Encapsulated thyristor with photosensitive control electrode - has disc of soft annealed silver between cathode and flanged current tap with compression spring - Google Patents

Encapsulated thyristor with photosensitive control electrode - has disc of soft annealed silver between cathode and flanged current tap with compression spring

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Publication number
DE2832040A1
DE2832040A1 DE19782832040 DE2832040A DE2832040A1 DE 2832040 A1 DE2832040 A1 DE 2832040A1 DE 19782832040 DE19782832040 DE 19782832040 DE 2832040 A DE2832040 A DE 2832040A DE 2832040 A1 DE2832040 A1 DE 2832040A1
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Germany
Prior art keywords
cathode
thyristor
disc
control electrode
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19782832040
Other languages
German (de)
Inventor
Heinrich Gerstenkoeper
Heinz Ing Grad Juchmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19782832040 priority Critical patent/DE2832040A1/en
Priority to SE7906162A priority patent/SE7906162L/en
Publication of DE2832040A1 publication Critical patent/DE2832040A1/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)

Abstract

The photo-ignitable thyristor has a semiconductor disc, carrying on one surface a cathode with a current tap and a photosensitive control electrode exposed to light. The other main surface of the disc carries an anode connected to a metal support disc. A disc (16) of soft annealed silver is mounted between the cathode (K) and a flanged portion (31) of the current tap (3), all these parts being of the same dimensions. Between the flange portion and the thyristor housing (2) is inserted a compression spring (F), exerting a pressure of at least 40 N/sq. mm. If the cathode is annular and surrounds concentrically the control electrode, the disc of silver is also annular and the current tap is in the form of a sleeve (33), open at both sides, with an annular flange.

Description

Die Erfinlung betrifft einen eingehäusten, mit Licht zündba-The invention relates to an enclosed, light-ignitable

ren Ti#yri#tor, dessen ülbleiterscheibe an einer Hauptfläche eine Kathode, an der ein Stromabnehmer angebracht ist, und eine lictvpfinliche oteuerelektrode, zu der das Licht Zutritt hat, trägt und an der anderen Hauptfläche eine Anode trägt, die mit einer Trägerscheibe aus einem Metall verbunden ist, Es sind derartige Thyristoren, mit Licht zündbar oder kurz als iichtzündbare bezeichnet, vom Markt her bekannt, bei denen der Stromabnehmer der Kathode durch Lötung angebracht ist, so daß Kathode und Stromabnehmer durch eine Lötschicht direkt miteinander verbunden sind. Mit der Lötschicht sind diese Thyristoren jedoch nicht hinreichend beständig gegen Temperaturwechselbelastungen. Bei der Herstellung der Thyristoren kann auch z.B. die Lötschichtdicke nicht hinreichend konstant, d.h. in möglichst engem Schwankungsbereich liegend gefertigt werden.ren ti # yri # tor, whose conductor disk has a Cathode to which a current collector is attached and a sensitive electrical control electrode, to which the light has access and carries an anode on the other main surface, which is connected to a carrier disk made of a metal, These are thyristors, light-ignitable or briefly referred to as non-ignitable, known from the market, in which the current collector is attached to the cathode by soldering, so that cathode and current collectors are directly connected to one another by a solder layer. With the However, these thyristors are not sufficiently resistant to thermal shock loads. When manufacturing the thyristors, the thickness of the soldering layer, for example, may not be sufficient constant, i.e. manufactured horizontally within the narrowest possible fluctuation range.

Aufgabe der Erfindung ist es, einen sogenannten lichtzündbaren Thyristor zu schaffen, der ohne irgendeine Lötschicht und Lötverbindung zwischen der Kathode und dem kathodenseitigen Stromabnehmer in einem Gehäuse (Zelle) hermetisch dicht eingeschlossen ist, in dem die lichtempfindliche Steuerelektrode für Licht zugänglich ist.The object of the invention is to provide a so-called light-ignitable thyristor to create that without any solder layer and solder connection between the cathode and the current collector on the cathode side in a housing (cell) hermetically sealed is included in which the light-sensitive control electrode is accessible to light is.

Diese Aufgabe wird gelöst durch die im Patentanspruch 1 gekennzeichneten Aufbaumerkmale eines lichtzündbaren Thyristors mit Druckkontaktierung.This object is achieved by what is characterized in claim 1 Design features of a light-ignitable thyristor with pressure contact.

In den weiteren Patentansprüchen 2 und 3 sind Aufbaumerkmale eines lichtzündbaren eingehäusten Thyristors mit einer ringförmigen Kathode und einer darin zentrisch angeordneten-lichtempfindlichen Steuerelektrode nach einer Ausgestaltung der Erfindung gekennzeichnet.In the further claims 2 and 3, structural features are a light-ignitable packaged thyristor with a ring-shaped cathode and a light-sensitive control electrode arranged centrally therein according to one embodiment the Invention marked.

Dadurch, daß Thyristoren gemäß der Erfindung, und nicht nur lichtzündbare Thyristoren, mit einer Scheibe aus weichgeglühtem Silber unter hinreichender Druckkontaktierung hermetisch dic'ht eingehäust sind, bestehen zugleich auch ein inniger Kontakt zwischen der Kathode und dem kathodenseitigen Stromabnehmer und somit äußerst kleine elektrische wie auch thermische Übergangswiderstände zwischen diesen Teilen.In that thyristors according to the invention, and not just light-ignitable Thyristors, with a disc made of soft-annealed silver with sufficient pressure contact hermetically sealed, there is also an intimate contact between the cathode and the cathode-side current collector and thus extremely small electrical as well as thermal contact resistances between these parts.

In der Zeichnung ist ein Ausführungsbeispiel der Erfindung dargestellt, das nachstehend beschrieben wird.In the drawing, an embodiment of the invention is shown, which is described below.

Die Zeichnungsfigur zeigt den Aufbau eines in einer Zelle mit Schraubsockel eingehäusten lichtzündbaren Thyristors, der in einem längs der Rotationsachse der zylindrischen Zelle geführten Achsialschnitt dargestellt ist.The drawing shows the structure of a cell with a screw base encased light-ignitable thyristor, which is in a along the axis of rotation of the cylindrical cell guided axial section is shown.

Die kreisförmige Halbleiterscheibe 10 des Thyristors trägt an einer der zwei Hauptflächen 11 eine ringförmige Kathode K und darin eingeschlossen und zentrisch angeordnet eine lichtempfindliche Steuerelektrode G. An der 11 gegenüberliegenden Hauptfläche 12 trägt die Halbleiterscheibe 10 eine ganzflächige Anode A, mit der sie mit einer Trägerscheibe 13 aus beispielsweise Molybdän durch eine Legierungsschicht verbunden ist.The circular semiconductor wafer 10 of the thyristor carries on one of the two main surfaces 11 an annular cathode K and enclosed therein and centrally arranged a light-sensitive control electrode G. At the 11 opposite Main surface 12, the semiconductor wafer 10 has a full-surface anode A with which they with a carrier disk 13 made of, for example, molybdenum through an alloy layer connected is.

Das so als ein ganzes ausgebildete Thyristorelement 1 ist auf einer planen Montagefläche 211 eines Schraubsockels 21, einem Teil des Zellengehäuses 2, zentrisch befestigt oder fixiert durch einen ringförmigen Passivierungskörper 14. Derselbst ist durch einen Schweißring 212 des Schraubsockels innerhalb des Schweißringes fixiert. Der Passivierungskörper bedeckt die Randfläche 15 und einen Teil der Hauptfläche 11 der Halbleiterscheibe 10 schützend. Über dem Passivierungskörper ist ein Deckring 29 angeordnet. Dieser ist durch eine rundumlaufende Schweißnaht 224 mit dem cheirin 212 einerseits sowie mit einem zylindrischen Ringkörper 23 aus Keramik, ebenfalls einem Teil des Gehäuses 2, verbunden, der über dem Deckring 22 (ZJ-fischenteil) angeordnet ist.The thus formed as a whole thyristor element 1 is on a flat mounting surface 211 of a screw base 21, part of the cell housing 2, attached centrally or fixed by an annular passivation body 14. It is itself within the weld ring by a weld ring 212 of the screw base fixed. The passivation body covers the edge surface 15 and part of the main surface 11 of the semiconductor wafer 10 protective. Is above the passivation body a Cover ring 29 is arranged. This is by a circumferential weld seam 224 with the cheirin 212 on the one hand and with a cylindrical ring body 23 made of ceramic, also connected to a part of the housing 2, which is above the cover ring 22 (ZJ-fish part) is arranged.

Die erfindungswesentlichen Aufbaumerkmale des in der Figur dargestellten Thyristors sind eine mit der Kathode K deckungsgleiche Ringscheibe 16 aus duktilem Metall, wie weichgeglühtes Silber, bedeckt die ringförmige Kathode ein ebenfalls mit der Kathode deckungsgleicher ringförmiger Flansch 31 einer als Stromabnehmer der Kathode verwendeten beiderseits offenen Hülse 3 bedeckt die Ringscheibe 16, so daß dieselbe zwischen der Kathode K und dem ringförmigen und fußartigen Flansch 31 des Stromabnehmers angeordnet ist und es ist die Ringscheibe 16 mittels einer zwischen dem hülsenförmigen Stromabnehmer 3 und dem zylindrischen Ringkörper 23 eingesetzten Druckfeder F, ein Satz Tellerfedern, unter einem Druck von 50 N/mm2 eingespannt, wobei sich die Tellerfedern gegen eine Stufe 32 zum ringförmigen Flansch 31 der Hülse 3 einerseits und gegen eine Stufe 231 eines gleichfalls ringförmigen Innenflansches 232 des zylindrischen Ringkörpers 23 andererseits abstützen.The structural features essential to the invention of the illustrated in the figure Thyristors are a congruent with the cathode K annular disk 16 made of ductile Metal, such as annealed silver, also covers the annular cathode with the cathode congruent annular flange 31 one as a current collector the cathode used on both sides of the open sleeve 3 covers the annular disk 16, so that the same between the cathode K and the annular and foot-like flange 31 of the current collector is arranged and it is the washer 16 by means of a between the sleeve-shaped current collector 3 and the cylindrical ring body 23 used compression spring F, a set of disc springs, under a pressure of 50 N / mm2 clamped, the disc springs against a step 32 to the annular flange 31 of the sleeve 3 on the one hand and against a step 231 of a likewise annular Support the inner flange 232 of the cylindrical ring body 23 on the other hand.

16 Die Ringscheibe soll jedenfalls unter einem Druck von mindestens 4 kp/mm2 (40 N/mm­ ) eingespannt sein. 16 The washer should in any case be under a pressure of at least 4 kp / mm2 (40 N / mm) must be clamped.

Mittels der so eingespannten Ringscheibe 16 wird die Kathode unter inniger Kontaktgabe drckkcntaktiert und zugleich hermetisch dicht gegenüber dem Zellenvolumen abgeschlossen. Die übrigen Oberflächenteile des Thyristorelementes 1 sind durch den ringförmigen Passivierungskörper 14 geschützt.By means of the annular disk 16 clamped in this way, the cathode under intimate contact with pressure and at the same time hermetically sealed against the Cell volume completed. The remaining surface parts of the thyristor element 1 are protected by the annular passivation body 14.

Aus der Zeichnungsfigur ist des weiteren im einzelnen noch beispielsweise zu ersehen, wie eine Thyristorzelle eines lichtzündbaren Thyristors aufgebaut und gegenüber der Umgebung abgeschlossen sein kann, nämlich wie der hülsenförmige Kathodenabnehmer 3 oben (in der Figur) aus der Zelle 2 herausgeführt und wie hierbei die Zelle verschlossen ist. Durch eine S.etallmanschette 233 ist an der Außenfläche des Innenflansches 232 der Ringkörper 23 aus Keramik mit einem den herausgeführten Teil der Hülse 3 umfassende Zylinderstutzen 331 verbunden. An dem Stutzen 331 ist ein Stromanschluß 332 angebracht. Durch eine an ihren Endflächen rundumlaufende Schweißnaht 333 sind der Hülsenschaft 33 des Stromabnehmers und der Zylinderstutzen 331 miteinander dicht verbunden.From the drawing figure is further in detail still for example to see how a thyristor cell of a light-ignitable thyristor is constructed and can be closed to the environment, namely like the sleeve-shaped cathode collector 3 at the top (in the figure) out of the cell 2 and, as in this case, the cell is closed is. Through a S.etallmanschette 233 is on the outer surface of the inner flange 232 the ring body 23 made of ceramic with a part of the sleeve 3 that is led out comprehensive cylinder connector 331 connected. A power connection is provided on the connection piece 331 332 attached. By a weld seam 333 running all around on their end faces the sleeve shaft 33 of the current collector and the cylinder connector 331 are sealed to one another tied together.

Eine Lichtleitfaser 35 ist von außen durch die Hülse 3 des Stromabnehmers so weit hindurchgeführt, daß sie mit der lichtempfindlichen Steuerelektrode "Kontakt" hat. Die Lichtleitfaser befindet sich in einer Isolierhülle 34, mit der sie in der Hülse 3 festen Sitz erhält.An optical fiber 35 is from the outside through the sleeve 3 of the current collector passed through so far that it makes "contact" with the light-sensitive control electrode Has. The optical fiber is in an insulating sleeve 34 with which it is in the Sleeve 3 gets a tight fit.

Claims (3)

"Ein,,ehäuster, mit Licht zündbarer Thyristor" Patentansprüche Fingehäuster, mit Licht zündbarer Thyristor, dessen Halbleiterscheibe an einer Hauptfläche eine Kathode, an der ein Stromabnehmer angebracht ist, und eine lichtempfindliche Steuerelektrode, zu der das Licht Zutritt hat, trägt und an der anderen Hauptfläche eine Anode trägt, die mit einer Trägerssheibe aus einem Metall verbunden ist, dadurch gekennzeichnet, daß eine mit der Kathode (K) deckungsgleiche Scheibe (16) aus weichgeglühtem Silber zwischen der Kathode und einem mit dieser ebenfalls dekkungsgleichen an sich bekannten flanschförmigen Teil (31) des Stromabnehmers (3) angeordnet und mittels einer zwischen dem flanschförmigen Teil und dem Gehäuse (2) des Thyristors (1) eingesetzten Druckfeder (F) unter einem Druck von mindestens 40 N/mm2 eingespannt ist."A" housed, light-ignitable thyristor "patent claims finger housing, light-ignitable thyristor, the semiconductor disk of which has a Cathode to which a current collector is attached and a light-sensitive control electrode, to which the light has access and carries an anode on the other main surface, which is connected to a carrier disk made of a metal, characterized in that that with the cathode (K) congruent disc (16) made of soft-annealed silver between the cathode and one known per se, which is also congruent with it flange-shaped part (31) of the current collector (3) arranged and by means of an between the flange-shaped part and the housing (2) of the thyristor (1) used compression spring (F) is clamped under a pressure of at least 40 N / mm2. 2) Eingehäuster Thyristor nach Anspruch 1 mit ringförmiger Kathode und darin zentrisch angeordneter Steuerelektrode, dadurch gekennzeichnet, daß die Scheibe (16) aus weichgeglühtem Silber ringförmig ist und der Stromabnehmer (3) eine beiderseits offene Hülse (33) mit einem ringförmigen Flansch (31) ist.2) A packaged thyristor according to claim 1 with an annular cathode and control electrode arranged centrally therein, characterized in that the Disc (16) made of annealed silver is ring-shaped and the current collector (3) a sleeve (33) open on both sides with an annular flange (31). 3) Eingehäuster Thyristor nach Anspruch 2, dadurch gekennzeichnet, daß eine Lichtleitfaser (3#) durch die Hülse (33) des Stromabnehmers (3) zur Steuerelektrode (G) geführt ist.3) Enclosed thyristor according to claim 2, characterized in that that an optical fiber (3 #) through the sleeve (33) of the current collector (3) to the control electrode (G) is performed.
DE19782832040 1978-07-21 1978-07-21 Encapsulated thyristor with photosensitive control electrode - has disc of soft annealed silver between cathode and flanged current tap with compression spring Ceased DE2832040A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19782832040 DE2832040A1 (en) 1978-07-21 1978-07-21 Encapsulated thyristor with photosensitive control electrode - has disc of soft annealed silver between cathode and flanged current tap with compression spring
SE7906162A SE7906162L (en) 1978-07-21 1979-07-17 ENCLOSURE, WITH LIGHT TENDABLE THYRISTOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782832040 DE2832040A1 (en) 1978-07-21 1978-07-21 Encapsulated thyristor with photosensitive control electrode - has disc of soft annealed silver between cathode and flanged current tap with compression spring

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DE2832040A1 true DE2832040A1 (en) 1980-01-31

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053020A2 (en) * 1980-11-21 1982-06-02 Hitachi, Ltd. Light-activated semiconductor device
DE19530264A1 (en) * 1995-08-17 1997-02-20 Abb Management Ag Power semiconductor module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053020A2 (en) * 1980-11-21 1982-06-02 Hitachi, Ltd. Light-activated semiconductor device
EP0053020A3 (en) * 1980-11-21 1983-02-09 Hitachi, Ltd. Light-activated semiconductor device
DE19530264A1 (en) * 1995-08-17 1997-02-20 Abb Management Ag Power semiconductor module
US5705853A (en) * 1995-08-17 1998-01-06 Asea Brown Boveri Ag Power semiconductor module

Also Published As

Publication number Publication date
SE7906162L (en) 1980-01-23

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