DE2743856C2 - - Google Patents
Info
- Publication number
- DE2743856C2 DE2743856C2 DE2743856A DE2743856A DE2743856C2 DE 2743856 C2 DE2743856 C2 DE 2743856C2 DE 2743856 A DE2743856 A DE 2743856A DE 2743856 A DE2743856 A DE 2743856A DE 2743856 C2 DE2743856 C2 DE 2743856C2
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772743856 DE2743856A1 (de) | 1977-09-29 | 1977-09-29 | Verfahren und vorrichtung zum abscheiden von halbleitermaterial |
JP11986978A JPS5458351A (en) | 1977-09-29 | 1978-09-28 | Device for depositing semiconductor material |
IT28176/78A IT1098966B (it) | 1977-09-29 | 1978-09-28 | Procedimento e dispositivo per la deposizione di materiale semiconduttore |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772743856 DE2743856A1 (de) | 1977-09-29 | 1977-09-29 | Verfahren und vorrichtung zum abscheiden von halbleitermaterial |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2743856A1 DE2743856A1 (de) | 1979-04-12 |
DE2743856C2 true DE2743856C2 (US08124630-20120228-C00102.png) | 1987-03-05 |
Family
ID=6020225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19772743856 Granted DE2743856A1 (de) | 1977-09-29 | 1977-09-29 | Verfahren und vorrichtung zum abscheiden von halbleitermaterial |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5458351A (US08124630-20120228-C00102.png) |
DE (1) | DE2743856A1 (US08124630-20120228-C00102.png) |
IT (1) | IT1098966B (US08124630-20120228-C00102.png) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4681652A (en) * | 1980-06-05 | 1987-07-21 | Rogers Leo C | Manufacture of polycrystalline silicon |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3194863A (en) * | 1961-07-24 | 1965-07-13 | Eastman Kodak Co | Compression rolling of multiple strips of organic polymers |
DE1221612B (de) * | 1962-09-15 | 1966-07-28 | Siemens Ag | Vorrichtung zum Konstanthalten der Temperatur eines bei einer pyrolitischen Zersetzung einer Halbleiterverbindung benutzten Traegers |
GB1209580A (en) * | 1969-03-17 | 1970-10-21 | Hamco Mach & Elect Co | Automatic control for crystal growing apparatus |
JPS5311189B2 (US08124630-20120228-C00102.png) * | 1972-10-30 | 1978-04-19 | ||
DE2518853C3 (de) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
-
1977
- 1977-09-29 DE DE19772743856 patent/DE2743856A1/de active Granted
-
1978
- 1978-09-28 IT IT28176/78A patent/IT1098966B/it active
- 1978-09-28 JP JP11986978A patent/JPS5458351A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
IT1098966B (it) | 1985-09-18 |
DE2743856A1 (de) | 1979-04-12 |
JPS5458351A (en) | 1979-05-11 |
IT7828176A0 (it) | 1978-09-28 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8120 | Willingness to grant licences paragraph 23 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |