DE2543628C2 - - Google Patents
Info
- Publication number
- DE2543628C2 DE2543628C2 DE2543628A DE2543628A DE2543628C2 DE 2543628 C2 DE2543628 C2 DE 2543628C2 DE 2543628 A DE2543628 A DE 2543628A DE 2543628 A DE2543628 A DE 2543628A DE 2543628 C2 DE2543628 C2 DE 2543628C2
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752543628 DE2543628A1 (de) | 1975-09-30 | 1975-09-30 | Informationsspeicher zum speichern von information in form von elektrischen ladungstraegern und verfahren zu seinem betrieb |
FR7627472A FR2326761A1 (fr) | 1975-09-30 | 1976-09-13 | Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre |
US05/723,312 US4064491A (en) | 1975-09-30 | 1976-09-15 | Information memory for storing information in the form of electric charge carriers and method of operating thereof |
NL7610696A NL7610696A (nl) | 1975-09-30 | 1976-09-27 | Informatiegeheugen voor het opbergen van infor- matie in de vorm van elektrische ladingsdragers en een werkwijze voor het bedrijf ervan. |
GB40151/76A GB1564617A (en) | 1975-09-30 | 1976-09-28 | Data stors |
IT27758/76A IT1072548B (it) | 1975-09-30 | 1976-09-29 | Memoria di informazioni utile per memorizzare informazioni nella forma di portatori di carica elettrica |
CA262,328A CA1087309A (en) | 1975-09-30 | 1976-09-29 | Information memory for storing information in the form of electric charge carriers and method of operation thereof |
JP51117884A JPS5243381A (en) | 1975-09-30 | 1976-09-30 | Information memory for storing information as charge and method of driving same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752543628 DE2543628A1 (de) | 1975-09-30 | 1975-09-30 | Informationsspeicher zum speichern von information in form von elektrischen ladungstraegern und verfahren zu seinem betrieb |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2543628A1 DE2543628A1 (de) | 1977-04-21 |
DE2543628C2 true DE2543628C2 (US20100154141A1-20100624-C00001.png) | 1987-05-07 |
Family
ID=5957857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19752543628 Granted DE2543628A1 (de) | 1975-09-30 | 1975-09-30 | Informationsspeicher zum speichern von information in form von elektrischen ladungstraegern und verfahren zu seinem betrieb |
Country Status (3)
Country | Link |
---|---|
US (1) | US4064491A (US20100154141A1-20100624-C00001.png) |
CA (1) | CA1087309A (US20100154141A1-20100624-C00001.png) |
DE (1) | DE2543628A1 (US20100154141A1-20100624-C00001.png) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2060997A (en) * | 1978-01-03 | 1981-05-07 | Erb D M | Stratified charge memory divide |
DE2842588A1 (de) * | 1978-09-29 | 1980-04-17 | Siemens Ag | Hochintegrierbares, dynamisches speicherelement |
DE2912858A1 (de) * | 1979-03-30 | 1980-10-09 | Siemens Ag | Niederohmige leitung |
JPS57157562A (en) * | 1981-03-24 | 1982-09-29 | Fujitsu Ltd | Semiconductor memory |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES404184A1 (es) * | 1971-07-06 | 1975-06-01 | Ibm | Una disposicion de celula de memoria de acceso casual para calculadoras digitales. |
-
1975
- 1975-09-30 DE DE19752543628 patent/DE2543628A1/de active Granted
-
1976
- 1976-09-15 US US05/723,312 patent/US4064491A/en not_active Expired - Lifetime
- 1976-09-29 CA CA262,328A patent/CA1087309A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4064491A (en) | 1977-12-20 |
CA1087309A (en) | 1980-10-07 |
DE2543628A1 (de) | 1977-04-21 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |