DE2441280C3 - - Google Patents

Description

The invention relates to a mass storage device as can be found in the preamble of claim 1 is.

There are various devices known in which freely movable unit elements in large Number under mutual influence or, standing in interaction, spontaneously to one arrange hexagonal pattern. So have z. B. magnetic single wall domains stray fields, the interaction forces can cause if such domains are closely enough adjacent to each other that the Coupling magnetic stray fields with one another. U.S. Patents 3,689,902 and 3,701,125 describe magnetic ones Single wall domain systems in which the functions of storage, decoding, des Writing and reading are shown. However, these conventional systems generally become so designed so that the interactions between the magnetic single wall domains are as small as possible being held. Precisely because such interactions may lead to a disadvantageous deflection

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of the single wall domains in their movement, such constructions K'Äief have so far been regarded as advantageous. The domestic systems also use magnetic conduction paths to determine in advance the possible path of moving Ififand domains in the system. Generally, in these conventional After-W ^ eiterhin information storage under fin & üunß ^a code display with presence * f | ^-:; Absence of magnetic single wall domains at • 1 »designated places or at the respectively specified time.

^ Recent work in the field of magnetic wall domains uses different code representations of information which are no longer defined by the lack of hands or the lack of magnetic single wall domains. A suggestion elsewhere Pdtire gives ^1, for example, an arrangement working with magnetic Pfkeiwanddomains, in which margins of different sizes represent the different Hfo rriatioris values. In this way, bit positions of the system can be filled, and the size of the domain at a bit position then determines the associated information value. ^ A ^; Another proposed device utilizing single magnetic waves with different magnetic and / or properties uses different arrangements of vertical Bloch lines in the _dome wall magnetization in order to encode magnetic fine wall domains accordingly. By increasing the magnetic field strength of the supporting fields to the collapse field strength of the domains, depending on the coding, different modes of behavior can be used which can be used for reading. So it is clear that the field strength at which a single wall domain collapses is a function of the number of vertical Bloch lines in the domain wall. Different binary states can therefore be represented by _domain n by using a different number of vertical Bloch lines in their domain walls. There are not only natural, but also higher-quality digital coding

^ There ^ is yet another one with magnetic single ^ domain domains with different physical properties working device has been proposed. There, the domains are impaired according to their movement properties in a perpendicular to the storage light plane acting magnetic field coded. Depending on the angle at which these domains are used Locomotion be distracted sideways, let yourself be iii Assign different digital values. ■ ^ Finally, there is a coding technique for magnetic single-wall domains in the ΪΒΜ Technical Disclusure

IS'vol 13, No. 10, March 1971 on page 3021

^v rubbed. Doer is coding according to the

The wall magnetization of magnetic inputs

ieiw'afid domains provided. To read out the

Chirality serves a single wall reference domain into which

Forcing an unknown single wall domain

so that a collision is brought about, which then the

Recognize the chirality of the unknown single wall domain

^ So far is known devices with magnetic Single wall domains, especially those used to store information, place little value on the highest achievable packing density, with reliable operating conditions and as little as possible Additional equipment is required. So far attempts have been made to achieve high densities, for example Use of ever smaller magnetic single wall domains and by reducing the number of lines wide line structures used to move these single wall domains. (To the Example of manufacturing small T and I permalloy strip lines by means of electron beams.) So far, however, no attempt has been made to establish such a setting Going off procedures, and finding new solutions that really lead to fundamental improvements in the System performance and packing density or be able to show ways to do this.

The object of the invention is therefore to to provide an information storage arrangement that utilizes encoded magnetic wall domains leads to a high-density mass storage device which is reliable in operation enables and the use of relatively simple manufacturing processes with a minimum number of Procedural steps permitted.

According to the invention, this mass storage device is, as indicated in the characterizing part of claim 1, in advantageously carried out.

In the present invention, a closely aligned crystal lattice layer lattice is used similar to a corresponding crystal lattice, but with interacting magnetic Single wall domains used, the relative position of these single wall domains to one another being large Partly by the magnetic forces existing between these single wall domains and not by the The location of guide structures is determined, which would otherwise be used to move and guide more or less in Interaction standing magnetic single wall domains are used.

In this way, the Achieve desired extremely high packing density, with changes in the memory area easily let carry out and structureless arrangements for the treatment of domains with great internal stability are made possible. These unit elements interacting in this way can also be any freely movable Be elements that take positions due to reciprocal forces acting between the unit elements are determined. Cylindrical single wall magnetic domains are specific examples of to consider such unit elements.

In order to move these unit elements into and out of a layer lattice of the kind mentioned, Various devices can be used to manipulate 50 as well as within this layer lattice. If necessary, the unit elements can be coded within the arrangement so that an essentially extremely high density structureless storage with 5s of internal stability over a large area of Operating conditions results.

Evidence for the possibility of the existence of interacting single-wall magnetic domains in magnetic layers has already been achieved. The following publications can be carried out on this.

1. S. H. C h a r ρ et al, "Behavior of Circular Domains in GdIG", IEEE Transactions on Magnetics, Vol. Mag-5, No. 3, Sep. 1969, p. 566.

2. J.A. Cape et al, "Magnetic Bubble Domain Interactions ", Solid State, Communications, Vol. 8, pp. 1303-1306, 1970.

3. W. F. D r u y ν e s t e y n et al, »Calculations on Some Periodic Magnetic Domain Structures: Consequences for Bubble Devices ", Philips Research Reports, Vol.26, No. 1, pages 11-28, February 1971.

4. JWF Dor Leijn et al, Repulsive Interactions Between Magnetic Bubbles: Consequences for Bubble Devices ", IEEE Transactions on Magnetics, Vol.Mag-7, No. 3, page 355, September 1971.

5. FA Jonge et al, "Bubble lattices," American Institute of Physics, Proceedings of 17 ^lh Annual Conference on Magnetism and Magnetic Materials, Chicago, Illinois, 1971, Section 4, page 130th

Although herein various theories and physical properties of single wall magnetic domains containing network levels and grids are listed or investigated, the application of such Arrangements for practical systems have not yet been considered. These mentioned works included therefore no suggestion or even instruction that refers to a practically usable system of this kind is directed. Although the existence of lattice structures and networks in the manner of a layer lattice for different unit elements were already known is Only with the invention of the breakthrough succeeded in such well-known features for the application of To use domain grids as mass storage for information in an advantageous manner. Instead of to assume known measures for information storage by means of magnetic single wall domains, a completely new path is taken with the invention, which leads to solutions for facilities which are far superior to the previous arrangements.

Interaction forces can thus become active under single-wall magnetic domains if they are packed tightly enough. Apart from the immediate vicinity of the delimitation of the aforementioned storage layer areas The layers of the magnetic wall domains within the storage layer area are thus determined essentially through the magnetic interactions between these individual wound domains definitely.

Storage facilities in the form of writing and reading devices are provided for moving the individual wall domains into a storage area or for removing them therefrom. The single wall domains thus form a hxugonal pattern within the spatial area, which thus has the advantage of a very close packing of magnetic single wall domains. Depending on the parameters of the system, such a domain structure can take various forms, such as hexagon, parallelogram and figures derived and / or combined therefrom.

The single wall magnetic domains are defined in one by the Hullcre boundary Spoichcrschichtbcreich introduced. The layers of the single wall magnetic domain within this As already mentioned, pain is practically only caused by the alternating forces between the A / clwnnddomHncn and not by the Hußcrc Structure determines 13 «ηk of these alternating forces the magnetic single-wall mandrel / ti to a very stable class conflguration,

In order to provide the Krttftc for holding or holding back magnetic single wall domains that are in the customer zones of the Domllnüiisehlchtglttcrs, a corresponding limiting device is provided according to the invention, which acts on the magnetic single wall domains on the outer edge of the domain layer lattice as if there were others

s interacting single wall domains would be present. Thus, a domain layer lattice can be arbitrary Size or with any number of interacting domains contained therein are provided, the itself, at least mathematically in its behavior as

ίο lets see an infinitely large domain layer.

This domain layer lattice can expand in many directions and z. B. in borderline cases also a Form a one-dimensional layer lattice.

For shifting interacting individual

is wall domains into a storage layer area are input devices and for extracting single wall domains from the storage layer area output devices are provided. These input and output devices provide forces to be overcome the limiting forces ready to maintain the domain layer lattice in the intended Storage layer area are required. Under certain conditions the domain layer lattice is elastic enough to accommodate the input of interacting single wall domains corresponding single wall domains to be able to push out in the domain layer grid at the other end of the storage area; in fact due to a wave-like propagation of interaction forces between the domains in the domain layer filter.

With the input and output controls single or multiple domains that have an impact on growth can be entered into the domain layer grid and take from this. The domain layer is applied

preferably maintained, although in itself it is also slightly during the input and output operations can be changed to the condition of the complete occupation of all grids contained therein to be sufficient in each case.

To provide dynamic individual domains, to be input into the domain lattice is a writing device intended. In one operating mode, information is assigned to each such influencing unit, in contrast to systems in which binary information is represented by the presence or absence of Einhcitsclcmentcn is shown, In the case of magnetic Einzelwandclomltncn as Einhcitselemenle can, such as said, a coding according to magnetic properties

in this way the single wall domains are made. The writing device therefore provides interlinking technology elements with coded information ready for the mass storage device, the coding according to physical Properties of this Einhclisclcmcntc takes place itself. In

Other examples may include magnetic interacting units of infarction elements that are optically distinct. Also electrical or magnetic properties of the informailonsclomcnto may be different to gcmHß

do coding to represent different information words.

Around the Im Domünonschlchtgittcr Sensing the intermittent elnzol wound domain can, a reading device is provided, which for

(t.s recognition of the different properties belonging to the code is trained In the invention gome, the encoded Information read and world compared.

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For forwarding or supplying the interacting Single wall domains outside the storage layer area are of course corresponding devices intended. These devices include a routing control device for shifting the single wall domains and arrangements for performing other functions on the single wall domains itself, such as B. for the selection, generation and destruction of the individual wall domains.

A visual representation of the rail grid can through Use of a light source to illuminate or transilluminate the layer grating can be provided, which reveals interacting unit elements of different optical properties. In this way a viewer (or an exit detector) can react to light passing through the layer grating arrives or is reflected therefrom, so that a representation of the layer lattice with the different identified unit elements results.

When using a domain layer lattice with magnetic single wall domains, there is a premagnetization required, which provides a magnetic Stülzfeld, which essentially in the light Magnetization direction of the magnetic medium, i.e. in the normal direction of the storage layer, works. This bias can be different in different areas of the magnetic storage layer Have values. For example, only one small bias or none at all while the bias outside this range is greater.

On the other hand, a uniform premagnetization can also be used of the entire magnetic storage layer, i.e. inside and outside of the delimited Layer area be provided. Depends on the The selected strength of the premagnetization is followed by the limiting forces as well as the other forces acting on the magnetic single wall domains are set. In addition, the Vormagnciisicriingsstcucrcineinrichtung arrangements to provide a small modulating prevention field included, thereby overcoming the respective coercive force of magnetic Single wall domain in the magnetic storage layer is facilitated. It shows

r-'ig. I create a mesh arrangement of each other in Interacting elements,

I ⁷ ig, 2 in a block diagram an information processing device which uses a grid arrangement of interacting elements,

FI g. 3 is a block diagram of another information processing device comprising a grid of using rotating elements, in which these elements are returned to the grid be able,

FIG. 4 is a block diagram of an information monitoring device which comprises two network arrangements of Interaction elements !! used,

FI g. 5 in a block dingram an information vcr working device in which with a light source d «s used grid of interacting elements is illuminated.

FI g, 6 In a block diagram, an information display system, in which the alternating objects are in the grid ^{1 used,} magnetic cylindrical single wall domains,

FIG. 7 is a graphic representation of the grid con

constant a _(l and the single domain diameter d as a function of the applied bias field for a grid arrangement of magnetic cylindrical single wall domains,

F i g. 8 the deformation of magnetic cylindrical single wall domains in a grid arrangement when the applied bias field Hi, is sufficiently negative,
F i g. 9A Different forms of limiting a

ίο grid arrangement of interacting elements,

Figures 10A and 10B illustrate an input operation with the interacting elements in a grid arrangement must be set,

F i g. 11 schematically tolerance values for the positions interacting elements lying on the edge of the boundary in relation to that of maintaining the Grid arrangement used demarcation device,

ϊο F i g. 12 the entire prestressing rock H ₁₁ as a function of the length coordinate of a magnetic storage layer in the event that a different prestressing field prevails inside a single wall domain grid than outside,

2s Fi g. 13A to 13D different structures for delimitation of interacting elements within a grid,

14A to 14D further structures for delimiting interacting elements within a

ίο grid,

F i g. 14E a current-carrying conductor in cross-section and the magnetic field generated thereby as a function of one of the dimensions of the conductor,
15 shows a containment structure for magnetic cylindrical single wall domains as interacting elements, which uses a magnetic discontinuity to aid in the containment of the magnetic cylindrical single wall domains in the grid;

16A to 16C show various devices for the uniform application of prestressing fields to the entire magnetic storage shaft, in which a grid arrangement can exist,
Fig. 17A and 17B devices for applying ma

.I ^ gnctischer leader field with inside and outside the grid arrangement of different amplitudes,

Fig. 18 Structures for access devices for moving interacting elements into a grid arrangement into and out of the structure,

, so Fig. 19AbIs I9E the mode of operation of the structure in IMg. 18 for moving interacting elements into the network,

Fig.20 shows another device for moving interacting elements into the grid

5.S and out of this,

Fig. 21 a further device for moving interacting elements in and out of the grid, F i g. 22A to 22G show the functioning of the facility in

do Flg. 21 in different time sequences for you to bring in

of alternating elements in the grid in and the expulsion of these elements from the

Grid out, Fig. 23 one to support the movement of

(15 magnetic cylindrical single wall domains In a grid arrangement suitable means, which supplies Krttftc, which the coercive forces within the Overcome order,

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Fig. 24 shows a device for supporting the Movement of interacting elements within its grid arrangement,

Fig.25 schematically shows the movement of the interacting Elements into and out of the grid using a geometric fan-out method and expansion procedures,

F i g. 26 shows in a graphic representation the various necessary preamble fields for the one shown in FIG Procedure shown when the interacting elements are magnetic cylindrical single wall domains,

Fig. 27 a guide structure for the introduction and discharge of the interacting elements into the Grid into or out of it according to the in F i g. 25 procedures outlined,

F i g. 28 shows in a block diagram another arrangement for moving interacting Elements in and out of the grid,

29 schematically shows details of the in FIG. 28 in Facility shown in the form of a block diagram,

F i g. 30 in a table the time sequence of current pulses in corresponding conductors of the arrangement 29 for controlling the input and output of magnetic domains into the grid in or out of it,

F i g. 31 the various positions in a table of the interacting elements at different times according to the sequence of to those who Arrangement of the conductors forming Fig. 29 applied current pulses,

F i g. 32 a device for coding magnetic cylindrical single wall domains as interacting Elements for use as informntionswcrtc within a grid according to the hartmagnet! - see and soft magnetic properties of these magnetic cylindrical single wall domains,

33 shows a sensor for sensing the magnetic and soft magnetic properties of cylindrical single wall domains which are coded for writing by means of the device according to FIG. 12 became,

Fig. 34 a device for coding magnetic cylindrical individual domains as interacting domains Elements due to their distraction properties for use as information sources a grid,

F i g. 15 a reading device for recognizing the information value by and after its derivation properties by means of; that shown in PIg, 34 Device coded magnetic cylindrical single-wound domes,

Fig. 36 a device for coding magnetic cylindrical single wall domes by means of different sizes of the single wall domes. This Figure also shows the corresponding device for Reading of such information represented by individual domains of different sizes,

Figs. 37A, 37B cylindrical single wall domes with different magnetic release screws, wus can be used to code information in a single wound domutia grid,

FI g. 38 the amplitude of a plane lying in the plane magnetic field impulse, measured over the tent, with domains with different magnetization «· Screw direction can be read,

Fig. 39 and 40 facilities for reading magnet! · sheared cylindrical single wall domains with under

different magnetization screw sense.

The following special description is in three
Main sections divided:

I. Network Information Systems - General

Description;

II. Network information systems with magnetic
cylindrical single wall domains.

In all the exemplary embodiments to be described
individual elements, which can interact with one another, become in a well-delimited one
Area brought in or out of this area
removed, usually in groups of more than
an element. Within this well-defined
Area there is generally no structure which
defines the positions of the elements relative to each other.
When the elements are close together, they are standing
interact with each other and these interactions essentially determine the positions of the
Elements. In this area the elements in
Be arranged in the form of a grid, which in
different information systems is particularly useful.

The first main topic deals with the general ones
Principles of well-delimited arrangements, such as
,!. B. Grids of interacting with each other
facilities using standing elements, while Section II Net / .werkinformationssysteme
describes those using special types of magnetic
interacting elements work. In section Il
these magnetic elements are magnetic cylindrical single wall domains.

I. Network information systems

The F i g. I through 5 show a network arrangement of FIG
magnetic elements and various, at least
one of these network arrangements using systems. The systems in Figures 2 through 5 use either type
of elements, if only between them there are interactions which affect the mutual position of the
Determine elements to each other.

The description in this section deals with
Networks in general and with the arrangements
2 to 5 in particular for the implementation of this
general sys'. ^ mc. In particular the description
of network information systems with magnetic
cylindrical single wall domains (U) dealt with many
General parameters of these systems. It also describes the effect of other parameters where single wall magnetic cylindrical domains are used.

Fig. I.

F1 g. I shows a grid network 30 with a Mohr number of interacting elements 32. These elements interact with one another in a manner which determines the mutual position of the elements with respect to one another. The elements in this diagram are shown as round, with a diameter d and a center-to-center distance% which can be called the Qltterkonstantc. The elements are in Flg. I shown hexagonally packed, but square oltter structures can also be used.

The elements 32 are in free interaction with each other and can be in your medium like that that move your positions essentially through that

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Interaction forces between them are determined. With mutually repulsive, interacting Elements and if there is a fixed number of such elements in a given area, the hexagonal lattice structure for maximum separation between the individual elements Arrangement is illustrated in Fig. 1 by the shaded elements. Every magnetic element has six nearest neighbors arranged in the shape of a hexagon. In this way, the network or Lattice arrangement 30 has a certain similarity with the arrangement of atoms in an atomic lattice.

The grid is characterized in that the elements acting on each of the interacting elements 32 Forces are primarily the forces of its closest neighbors. The elements on the perimeter of the The layers shown in FIG. 1 of course only have a grid arrangement if they are acted upon Limiting forces are provided to keep repulsive forces from the other elements in the grid be compensated, d. that is, limiting forces are required to ensure that the interacting Elements on the perimeter of the lattice area by the forces from the elements that continue within the Grid, do not be pushed out of the grid.

The arrangement of FIG. 1 can provide a very high packing density because the interacting elements can have a closely packed structure in which the lattice constant a _{0 is} very small. A grid arrangement of interacting magnetic cylindrical single wall domains in a material can e.g. B. with an applied bias field Wb = O have a lattice constant uo that is slightly larger than the domain diameter (;) o = 1.35f /). This achieves extremely high packing densities and - if information is stored by the properties of the interacting elements themselves - an extremely high storage density. Since the system also operates without special conductive structures within the grid area itself, there is an easy possibility of producing and using such devices.

The shape of the grid can be changed to a large extent. The particular shape of the grid shown in Fig. 1 takes advantage of the symmetry of the grid such that rows of interacting elements 32 are at an angle of approximately 60 "to the horizontal lines within the grid. This arrangement is of particular use as it is more direct With other, likewise possible arrangements, it is only important that, as above, the interacting elements are kept in an area which has practically no position-defining guide devices for the elements and in which they can be addressed at random If elements are packed tightly enough, their mutual position is determined locally essentially by the interactions with other elements, because there is practically no guide structure that determines the position in the well-delimited area.

It will be apparent from the further description how information is encoded in the elements 32 how these elements or element groups In the Oltternetz 30 can be moved in and out of It and how such elements can be read and In very close packing can be stored.

Fig. 2

This figure shows schematically a device that a well-delimited arrangement 30 of interchangeable kenden elements 32 are used. The arrangement 30 is a grid which is defined by the delimitation device 34 is held together, which has a compensating force on the elements 32 lying on the edge can act within the grid and in this way

, ο maintains the lattice structure. The size of the Grid arrangement 30 then plays a role and can, for. B. 2x2 or 1000 χ 1000. In principle, sees each part of the lattice looks as if it were part of an infinite element lattice, since the main part

is of forces on each element within the lattice comes from the closest neighbors of this element.

With a writing device 36 interacting elements 32 are generated in the grid. Also can this writing device possibilities for coding

jo of the elements 32 contain in such a way that one impresses different physical properties. The elements 32 in the grid are themselves the information carriers.
An input device 38 receives the reciprocal

; s kenden elements from the pusher 36 and inputs them into the grid 30. The input device 38 provides enough force to the input elements that they can overcome the force generated by the limiting device 34 in order to get into the grid.

) o With an output device 40, elements 32 taken from the grid 30. The output device 40 is comparable to the input device in that also it provides enough force to stop the guard 34 delivered holding forces to overcome.

As a result, elements 32 within the grid 30 can be pulled out of the latter. How more precisely later is described, by entering elements 32 in the grid, other elements can be selected from the Remove the grille, d. H. Elements 32 already present in the grid experience forces from the in Newly entered elements into the grid and these actions are carried out through the whole grid transferred, thereby driving the last elements out of the grid on the grid's output cndc will.

A reading device 42 receives element 32 from the output device 40. With the reading device, the elements 32 from the grid and, in particular, the different elements belonging to these elements are

SQ read different information. When the elements 32 from the grid are to be used elsewhere, there is no need for a reading device. A user device 44, such as. B. a computer or another iron-processing equipment, can be accessed by the Responding Lesccinrichtung generated signal or the previously stored in the grid 30 magnetic Use cylindrical single-wall domains.

The device of Figure 2 operates under control of signals of the control device 46, the clock in ·

(<u gnngsslgnule to the input device 38 and the • Output device 40 delivers, This ensures synchronization,

Fig. 3

ns FI g. 3 schematically shows a further data processing system using a Doinänengit · ters In modification of the arrangement according to FI g. 2. Also in the device according to FI g. 3 are writing devices

J6 for providing elements 32 for the input η the domain lattice 30 is provided. The input device 38 is connected between the writing device 36 and the grid 30 and provides for the input of interacting elements into the grid 30. An output device 40 takes interacting elements out of the grid 30 and transfers them to the reading device 42 where their informational value is determined . If necessary, a user device can be provided which uses the output of the reading device for other data processing purposes. The synchronization of the entire device is carried out by the control device 46, which generates clock pulses in order to synchronize input and output devices as well as other devices requiring control.

The system of FIG. 3 differs from that shown in Fig.2 in that a path 48 to Return of magnetic interacting elements from the reader 42 to the input device 38 is provided. In this way, the memory is read out non-destructively and the interacting Elements can be returned to the grid area 30 again. These elements can as will be explained later, can be used again in corresponding positions in the grid, or they are mixed with new elements from the writing device 36. So you can create completely new ones in the grid Provide information, only parts of the information in the Replace the grid or restore the original information in the grid. This facility is special advantageous in large storage systems where nondestructive read operation is preferred.

Fig. 4

FIG. 4 schematically shows another data processing system which works with a grid area as an essential part. The system of FIG. 4, however, uses two grid areas 30/4 and 305, whereby the magnetic elements can move back and forth between the two grid areas. Information read from one grid is thus transferred to the other for storage. This non-destructive readout method is particularly suitable for mass storage systems, i.e. h "the interacting elements are very you in each lattice area; packed and thus also result in a high storage density. The elements are removed from one grid for the read operation and returned to the other grid for storage. If necessary, the information taken from the grating 30A can also be re-encoded before it is placed in the grating 30O. As a result, the amount of information available is maintained and a very efficient, high-capacity storage system is obtained.

The same reference numerals are used in FIG. 4 as in the previous figures. The first grid area and the associated components are denoted by the suffix A , while the second grid area and its associated components are denoted generally by the suffix 5.

A writing device 36A supplies interacting elements to the input device 38/4. These elements are inserted into the grid 30Λ by the input device 38/4 and can be removed from the grid by the output device 40A. The control of the input device 38/4 and

the output device 40Λ is carried out by a pulse from the control device 46A. Elements removed from the grid 30/4 are read by the reading device 42Λ and then passed into the grid 30/4.

The input device 385 directs the output of the grid 30/4 to the input into the grid 305. If necessary, new information can be conveyed by the writing device 365 and then the information is diverted from the grid 30Λ or destroyed by means of the device 385 under the control of the control device 465 . The elements in the grid 30B can be taken from this grid by the output device 405 and then read by the reading device 425. Input and output operations for the grid 305 are controlled by the controller 465. The overall control of the system with the grids 30Λ and 305 is synchronized by the synchronization device 50, which gives corresponding signals to the control device 46A and 465 . This ensures that the information moves smoothly from one grid to the other and that the operations relating to each individual grid take place in the correct time sequence.

The output of the reading device 425 is passed to the input device 38Λ which belongs to the grid 30A . If necessary, the output of the grid 305 can be input directly into the grid 30/4. The input device 38/4 can, however, contain devices for destroying or redirecting interacting elements from the grid 305 in order to also be able to write new elements into the grid 30A. In this case, the writing device 36/4 generates these elements, which are then input into the grid 30A.

The system of Figure 4 provides a circuit for the elements from one grid area to the other Control of the associated components. This is a particularly advantageous one System solution that can be easily modified or improved, for example by adding more Provides grid areas. In addition, the two grid areas shown do not need to be of the same size and asynchronous operation is also possible. The principle is that information is from a grid need not be returned to the same grid or destroyed, but also from a grid area can be moved to another to make the information carrier more economical and effective and to keep their amount practically constant.

Fig. 5

F i g. 5 shows how information contained in the grid area can be read out optically. Also can the grid area for the pictorial representation of optical information in the form of a pattern various interacting elements within the grid 30 can be used.

The grid 30 lies between a light source, generally designated 52, and a reading device 54. The light source 52 consists, for example, of a laser 55 and a polarization device 56. For different systems, the light source does not necessarily need to emit coherent light, and it does also not always a polarization device to be provided. In the special case where the Elements 32 in grid 30 are magnetic cylindrical single wall domains, however, is use

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The reading devices 54 include means for sensing the transmitted or transmitted through the grating light reflected from the interacting elements in the lattice. In Fig. 5 contains the reading direction 54 an analyzer 58 and a suitable light detector 60, in some cases does not need a polarized Light to be used and in this case the analyzer 58 would then be redundant. The detector can moreover, it can be any kind of light-reacting mechanism and in some cases it can also be for detection the arrangement of interacting elements in the grid 30 can be replaced by the human eye. These relationships are explained in more detail below. Although the reading devices are outside of the Grid area is shown lying, they can also be arranged so that to the interacting Information belonging to elements is read while the elements are in the grid area.

The explanation of FIGS. 1 to 5 is one general description of data processing systems that have a well-defined arrangement (the one Lattice) of interacting elements, in which the interactions between the Elements the determining parameters for the mutual position of the elements within the delimited Area are. While some general considerations about the lattice properties, addressing of information in the grid and the coding of interacting elements with different Physical properties have been discussed, these concepts are reflected in the description below special embodiments of data processors working with grids of interacting elements Systems explained in more detail.

U. Information systems with grids of magnetic cylindrical single wall domains

This section deals with data processing systems, the well-delimited arrangements (grids) use, in which the interacting elements are magnetic cylindrical single wall domains, which can move freely in a magnetic medium that carries them.

Such a medium is known per se and includes orthoferrite, garnet, amorphous magnetic materials and other magnetic media in which single wall magnetic cylindrical domains exist are. In the following description many aspects of the physical and mathematical Apply description of lattice arrangements to systems that also interact with other systems Use elements as cylinder domains. In the special case of the magnetic cylindrical single wall domains however, other parameters such as B. the magnetic bias field has a certain influence did take effect of the facility. These special factors are described in detail.

Fig.6 shows an embodiment which a Grid arrangement 30 is used in which the interacting elements 32 are magnetic cylindrical single wall domains that are capable of existence in the magnetic medium 62. With the delimitation device 34 is the shape of the grid 30 is controlled and the domains 32 lying on the edge of the grid are retained. As previously described, writing device 36 creates single wall magnetic cylindrical domains for input into the grid 30 via the input device 38. With an output device 40 the domains can be removed from the grid 30, which are then read by the reading device 42 to be read. In this embodiment it is assumed that the domains are coded such that d * ß their various physical properties indicate various information values. The output signals of the reading device 42 are sent to the user

iο facility 44 passed on. The control device 46 provides input signals to the writing device 36, the input device 38, the output device 40 and the reader 42 to synchronize the operation of the device.

The domain grid device of Figure 6 includes also a bias field device 64 for generating a magnetic bias field, which in general, but not necessarily, practically parallel to the easy direction of magnetization of the magnetism Medium in which the single wall domains are viable. The magnetic bias field can be uniform with respect to the magnetic medium or in different areas of this Medium also have different values. A very small header field (or a field with a value of zero) can e.g. B. exist in the grid area, while a larger preload field exists in such areas which surround the actual grid area.

A drive field device 66 is also provided which, generally speaking, is used to provide magnetic drive fields for moving the magnetic cylindrical single wall domains. The propulsion field device may include many different embodiments including conductors or strip assemblies of magnetically soft material overlying the magnetic medium in which the domains are moved and stored. With the aforementioned driving fields, the domains are moved both inside the actual grid area 30 and outside in the areas of the magnetic medium 62 which surround the grid area.
The following is a description of the various operating parameters for systems that employ grids of interacting domains.

The opening credits

For a grid consisting of magnetic cylindrical single-wall domains, a parameter that can be set for applications is the required magnetic bias field Hb, which is applied parallel to the light magnetization axis of the medium 62 carrying the domains. In general, various arrangements of the prestressing field are possible, such as ζ Β.

1. Preamble field Hb = O or another small value within the grid area, but with a larger value outside the grid area. The value outside the grid area is approximately the value used for devices with isolated domains (ie 4π MJX where M _{5 is} the saturation magnetization of the magnetic material supporting the single wall domains).

fi.s 2. A small uniform bias field H _b can be used for areas inside and outside the grid. In this case the precautionary field is over the entire magnetic field

Material evenly. A suitable value is about 4 η MJA. When a"; If further domains are arranged around the actual storage grid, the applied preamble field Hb can be uniform or zero, both inside and outside the storage grid.

The use of different heading field areas as design parameters depends on the desired application. A uniform, small bias field that is applied to the magnetic material is helpful, for example when creating a grid that is relatively insensitive to changes in the bias field and to which the domains can be moved easily. Since the interaction force between the single wall domains is proportional to c / Vao ⁴ , a change in the prestressing field that changes these parameters also changes the force effective between the magnetic elements. Since the ease of movement of magnetic domains in the lattice is a function of the force existing between the domains, the change in the bias field is a useful parameter in a particular design.

In addition to this uniform Vorüpann field, you can also use an alternating field that is generated by a current-carrying coil surrounding the magnetic medium. An alternating field or a pulsed bias field tends to reduce the damping caused by the coercive force H _c in the magnetic material, which in turn allows the domains in the lattice to move more freely. The frequency of the alternating field is such that a few cycles of this field occur during the grid shift. For example, pulses with a frequency of 2 to 3 MHz and a width of about 1 microsecond are suitable.

A uniform bias field has no influence whatsoever on some magnetic elements. In that still to descriptive embodiment with styrofoam balls that float in a liquid and are magnetic Contain elements, a header field has no effect. In some cases one can therefore also do this Provide interacting elements, which by a perpendicular to the medium running magnetic Preload field are not significantly influenced. When the magnetic moments of the magnetic elements are a function of the preamble field, then in general the preamble field has an influence because of the magnetic energy that it introduces.

Lattice properties

The grid of FIG. 6 consists of many interacting elements 32 in an arrangement in which there is practically the same distance between the elements, which is described by a lattice constant ao. The interacting elements have a diameter d.

Interacting elements are generally arranged in such a way that the total energy of the system is as small as possible. In a grid consisting of magnetic cylindrical single wall domains with Hb = 0, the grid area contains approximately equal proportions of areas with upward and mil; downward fts magnetization. If additional single wall domains are brought into the lattice area, the size of the domains in the lattice changes in order to again obtain areas of approximately the same size with upward and downward magnetization. In addition, the sum of magnetostatic energy and the domain wall energy for a cylindrical single wall domain of a given size is minimized when it is in a lattice arrangement. For a given number of domains, the individual domains adjust themselves in such a way that the total energy of the system is as small as possible.

A grid characterized by equal areas with upward and downward magnetization is called a "demagnetized grid". This grid can be manipulated to change some of the spacing between the single wall domains within the grid to contain a denser grid with smaller single wall domains. The lowest energy configuration is found within the single wall domain lattice for a specific prestressing field. At Hb = 0 z. B. the distance a ₀ between the single wall domains 1.35 c /. This distance can be changed with the help of an applied preload field Hb . Analogous to the friction, the coercive force H _{c of} the medium can cause the lattice constant a ₀ to deviate locally from this value.

A lattice has an inherent stability that is greater than the stability for isolated cylindrical single wall domains (which are essentially not interacting with one another). This is shown in the curve of Figure 7, where the lattice constant ao and the diameter of the domains are shown as a function of the applied bias field Hb . The magnetic material is

(YEu) ₃ (FeGa) ₅ Oi ₂ .

It is easy to see from these curves that there is a fairly wide area of the header field in which the value a, j changes only slightly. In the same area of the applied bias field, the diameter of the domains changes slightly, but not significantly. As the bias field increases, the spacing between the domains increases to a greater extent until the domains become isolated domains. The diameter of the domains also begins to decrease faster. The bias field H _b can vary between a negative value and approximately half the value for isolated single wall domains without the lattice constant a ₀ changing significantly. Due to the change in diameter of the domains, however, there is a change in the entire area of the upward magnetization of the magnetic medium compared to that of the downward magnetization in the lattice area.

The entire bias field acting on the domains within the grid consists of the applied bias field Hb and the bias field, which is due to the interacting magnetic stray fields of the cylindrical single wall domains. As the applied bias field increases, single wall domains in the lattice collapse at values of the applied bias field that are less than the values at which the domains would collapse if separated from one another. This is because the total bias field acting on the domains in the lattice is a combination of the applied bias field and the interacting magnetic field generated between the interacting domains.

[ ίο ν e η a F h \ ν

E ei S '

19th

nt ϊ «J j

nit: it

les nit lib .'in ifien nn en

is to; - in ler ier iw) as

I ! en ler ■

mt: en; en eh nn in inch en! er ms

ers: en the id-

IO

20th

: en die ien is the ine les in approx.

When the applied preload decreases, there is

■ η area in which the cylindrical domains in

ruer cannot be converted to stripe domains.

η s is due to the prestressing field, which

s the interaction magnetic fields between the

nornänen in the lattice arises, if the applied

VnrsDavinfeld decreases so that the center-to-center distance (a ₀ )

Ir domains in the lattice will change approximately l _s 25c /

• h is the shape of the magnetic single wall domes,

although the grid arrangement still exists. This Vnreang is represented by the hexagonal deform-Γη Single wall domains 32 in FIG.

If the value of the applied header field exceeds a certain negative value, the Start combining single wall domains by confluence and the lattice structure goes increasingly lost. When this type of domain combination occurs, one can use the lattice arrangement

ot restore it by simply inserting Hb

If ^he restrictions exist on the grid line / eg by a structure limiting the forces on the grid domains exerts), the curves shown in Figure 7 remain flat over a larger area of the applied bias field Hb. The cylindrical single wall domains shrink in diameter, but the lattice constant a ₀ remains approximately the same until the total bias field (applied field Hh plus interaction field H) becomes large enough to collapse the single wall domains.

The area of the bias field over which the lattice of the single wall domains is stable is a function of the properties of the material including magnetization, anisotropy and layer thickness, as well as the strength of the interaction of the material. The range goes from small negative values to values comparable to the critical values for stable isolated single wall domains. (For example, for a 5 micron thick single wall domain material made from a rare earth iron garnet, the total preload field (H _b + H ₁ ) is approximately

102Oe> H _z > -25Oe.)

The lower limit of the entire prestressing field is at a value at which a combination of the individual wall domains and the resulting destruction of the grid is barely prevented. The upper limit of a suitable bias field is a value that is slightly smaller than that which would lead to a collapse of isolated areas of single wall domains in the lattice. This means that a spontaneous collapse of single wall domains in areas within the grid should not occur if a grid with louder positions is important. In other words, the high and low limit values of the applied bias field H _b are chosen so that the lattice does not disappear, be it through banding of the domains or through their collapse within the lattice.

40

45

Lattice form information use Arrange themselves in a hexagonal lattice

the

III 1.1111.111 I. ~ .... _O

interacting elements in the lattice structure by themselves in close hexagonal packing, each Element has six nearest neighbors arranged at the corners of a regular hexagon. the Symmetry lines and planes of symmetry of interacting elements form in such a grid 60 ° angles to each other. (In a square grid, the lines and planes of symmetry run at right angles to each other). To get a regular grid in which all positions are filled, you have to the delimitation of the lattice along lines and planes of symmetry of the interacting elements get lost.

Figures 9A, 9B and 9C show three possible ones Limits that provide regular hexagonal lattices in which all positions with interactive Elements 32 are filled. FIG. 9A shows a hexagonally delimited grid, the FIG. 9B an equilateral triangular grid and FIG. 9C is a diamond-shaped grid. The lines and planes of symmetry for each the grids form an angle of 60 ° with each other.

The circularly bounded grid in Fig.9D forms not a regular lattice because there are dislocations in this lattice (i.e. vacancies and displaced Elements 32). Although the grid of FIG. 9D could be used in an information system Lattices with shapes that are determined by lines and planes of symmetry of the interacting elements, easier to use. In particular, interacting elements can more easily be placed in this regular lattice be moved in and out of them and every position within the grid is occupied. If the interacting elements are coded to represent information, the use of a ) regular grid ensures that no information is lost.

When the shape of the lattice area and the lattice constant ao are initially predetermined, is within the grid area a certain number of interacting elements is required to create a to get a regular grid in which all positions are occupied. However, the grid has a certain Mobility and interacting elements can also be used without being heavy Disturbances in the grid are triggered. As an example, FIG. 10A shows a grating 30 which is assumed to be should be completely filled with interacting elements 32 and thereby forms a regular grid. If you want to push further new interacting elements 32Λ into the grid and all existing ones Hold elements 32 in it, this triggers a compression of the grid on the side on which the elements 32A are input and the result is an adaptation of the lattice constant ao to this Edge.

10B shows a case in which only two interacting elements 32Λ are to be entered into a regularly delimited grid 30 with interacting elements 32 in each position. When the two elements 32/4 are entered into the grid, empty spaces corresponding to the missing interacting elements in the row to be inserted are also moved into the grid. These vacancies can be moved further in the lattice and thus represent lattice disorder. In general use, however, a lattice without voids is preferred because information can be lost or the properties of the regular lattice are not retained. That is, the interacting elements in the grid rearrange to compensate for the vacancies or, viewed differently, to compensate for the two additional interacting elements 32A . This will make local

Compensation processes of the interaction constants caused and the uniformity of the lattice is disturbed.

Another consideration of the tolerance values for the successful input / output of domains of the grid is the dimensions of the grid. The left and right edges at which domains enter or leave the grid are more important than all other dimensions of the grid. Any change in grid generation also causes a local change in grid spacing. In the event of any change, a _{0 should} lie within the stability limits according to the representation in FIG. 7 and must be sufficiently graduated so as not to cause any shifts in the grid. For example, a tolerance of ± ao / 2 on the left and right edges of the grid is believed to be appropriate.

In addition, the angle at which the input elements 32A enter the grid must be taken into account in the grid. The direction of the input elements 32A is generally at 60 ° with respect to the left edge 86L of the hexagonal grid. However, changes to this angle are also permitted. A change of about ± 2 ° is a good example. For a square grid, the entry angle is around 90 ° with respect to the edge of the grid and can also be varied. This angle is not very critical, since the interactions between the elements 32Λ and the elements 32 in the grid have a stabilizing effect on the elements newly entering the grid and thereby the correct entry and exit directions are maintained.

Limiting force

As a result of the interaction forces between the individual elements, a grid arrangement of such interacting elements are stable, but are subject to repulsive interaction forces the elements lying on the edge of the grid arrangement forces that are not caused by other elements be balanced outside the actual grid area. For example, in Fig. 1, the utmost upper left element Forces exerted by other elements in the lattice. When these forces are repulsive forces this corner element is pushed out of the rest of the grid arrangement. Hence, a Delimitation device (34 in Fig. 2) used to maintain the shape of the grid and ensure that information in the form of interacting elements does not get lost from the grid. This Subsection deals with the force necessary to maintain the shape of the grid during the The following section describes some suitable devices for demarcating the grid.

In general, the delimitation device provides forces which locally change the distances between the interacting elements. The influences on an element in the Oltter come primarily from its closest neighbors. If a demarcation device yeasts a corresponding force on the perimeter of the grid, the gilter therefore appears to be infinite for each element within the grid. In this perspective, the limiting force could also be provided by elements that lie outside the delimited actual fts memory area and are in an Oltter pattern of elements outside the Spelchergliterbcrelchos at · Hcordnot,

25th

30th

35

40

45

50

55

Interacting elements at the edges of the ■. '. W.

Grids can move a little, so the distance is ge

from these edge domains to the delimiter; can change. According to the illustration in FIG. 11 a deviation of ± 20% a _{0 is} generally permissible. for

some applications awh a larger: _Wl tolerance may be permitted. If the delimitation force is very high, elements at the edges of the grid area are pushed towards the center of the same, while in the case of a small delimitation force the outer rows of interacting elements are pushed closer together

will move the demarcation device. %

The limiting force can either be attractive;

whereby the elements are held at the edge of the grid- '..'<}

th or repulsive, whereby the; gal

Edge elements pressed into the grid area H ₇

will. ter

With the delimitation force there are series of

interacting elements around a larger them

Amount separated as ao to a limited storage; around

Order (grid) to be defined. If there is no inter- Gr

kenden elements outside the memory area; Size

are present, the limiting force is approximately cyl

just as great as the interaction force Fi that acts on ter

each of the interacting elements from the dei

Neighbors is exercised. If, however, also outside toilet

the intended memory area interacting; |

Elements are present, the limiting force - fcK

which must be just big enough for a separation (> ao) dci

of the elements inside and outside of the memory

rich done - be less than fi. V /

The extent of switching between the series of I

effective elements to achieve separation (the Vo

is greater than ao), determines the size of the required; inn

Limiting force. If the distance between the km

Rows equals a ₀ , then there is no "separation" of the

due to a limitation force. To generate _; on

of grid arrangements, where elements in the memory i Gn

area can be moved in and out of it, km-

is generally sufficient a separation around the; location;

Amount a is ₀ or greater than nnj by a smaller amount;

«0. and the size of the limiting force is determined

accordingly selected, a center-to-center distance between the sch

Rows of (ao + ao / 2) is e.g. B. a suitable Absland. , (Je

The separation can also be greater and then requires Do

»At · also greater delimitation forcesc. \

In the case of magnetic cylindrical single balance · Sn

domains the limiting force is best described by ] r.ii

local changes in the leader field in different > we

ncn areas of magnetic material supplied. In the

a system as shown in FIG. 4 is shown, e.g. B. Git

the prestress applied in the storage grid area 0.1 \

(4 η M ₁ ) , where M, the saturation magnetization Sir

of the material, while the applied prestress Do

in the areas in which cylindrical single dorsa

Mencn are not used, the saturation value is rcii

can. For shift registers, which magnetic zyllndrl- 1

see individual domains moving between the grids

gen, the applied bias voltage can have a value An

between 0.1 (4 π M ₁ ) and the saturation field to have Gr

Stabilize single wall domains in the shift register. irn

The value of Hb (anijelogtes preamble field) in the grid Gr

can be set in such a way that one dnc desired on

Storage density (ao) receives. /.ic

For magnetic cylindrical wall domains dci

the interaction force F _{1 can be determined} between isolier · klc

ton domains compute as between the domains dei

existing Dlpolkruft. This calculation shows that the wc

Interaction force is given by the following expression:

F ₁ - proportional

(2.-TI · ² /! · M ₅ ) ²

(D

wherein

M _{5 is} the magnetization of the magnetic medium in which the single wall domains are able to exist,

r is the radius of the single wall domains,
h is the height of the single wall domains and,
ao is the center-to-center distance between the domains.

The description relating to the limiting forces has so far been valid for the case that the entire preamble field W * * * Hb + W is the same inside and outside the storage grid area.

However, if the entire bias field in the grid area is different from that outside the grid area differs, there is a gradient in the direction of the grid boundary in the entire preamble field. This Gradient in the entire prestressing field forms one on cylindrical single wall domains within the grid acting additional force, which is taken into account when determining the required limiting force must become.

The additional force due to a gradient in the applied bias field is given by the expression d -V Hb, where d is the diameter of the single wall magnetic cylindrical domain and V Hb is the gradient across the domain.

Fig. 12 shows a situation in which the applied bias field H _b outside the grid is different from that inside the grid. However, the grating area 1 can be such that a gradient VHi. runs into the Gilicrbcrcich. The gradient leads to a force acting on those domains which are covered by the gradient and the existence of this force can lead to an adaptation of the lattice constants «o in spatially delimited areas of the lattice. The applied prestressing field and the gradient should accordingly be set in such a way that the total prestressing field acting on the magnetic cylindrical individual domes does not become so great that the domains collapse.

If the gradient in Hb extends into the grid area a distance ii _a or less, the trellis range 1 (I "i g. 12) can be used. In this case, only one row of the grid is disturbed by V Hh and the resulting force is supported the demarcation of the grid,

If the gradient in / -Men Gitlcrbcreich over a A distance of several «o reaches in, becomes several Domltnenrcihcn in the grid disturbed. In this FnII it is rutsnin to use a Gitlorbercieh 2 (Fig. 12) as a storage area.

The distance that the gradient in the grating can reach is very flexible and depends on the amplitude of the prestressing field, the steepness of the gradient and the layer thickness of the material carrying the domes. In order to keep the expansion of the gradient in the lattice as small as possible, a nm smooth surface is preferable to a small, unassigned bias, according to FI g. 7 the oil constant and the dome diameter are reduced very slightly if the small field Hb is present in the lattice area. This has the further advantage that the alternating force l wcBen the smaller diameter is somewhat smaller,

and thus the domains in the lattice can be moved more easily.

A sharp rise in the preamble field at the boundary of the grid is defined as a rise in which the largest part occurs over the area of only one lattice constant ao, i.e. two rows of elements are separated by a distance that is greater than a ₀ , while the rest of the grid has a uniform distance ao. The gradual increase takes place over several lattice constants and puts the lattice under tension.

In general, the grid can be stressed upward to a point where it will plastically deform, that is, the stresses should be less than those stresses which will cause irreversible changes in the grid. In a regular hexagonal grid where each element has six nearest neighbors, all equidistant a ₀ , the elements change their regular spacing and the grid no longer appears regular hexagonal when voltages are applied to that grid. When the stresses reach the elastic limit of the lattice, it deforms plastically and no longer acquires its original uniformity when the stress is removed.

The elastic limit of the single wall domain lattice depends on such factors as e.g. B. from the applied header field Hb . A local modulation of 30 to 40% can e.g. B. can be used without the elastic limit for Hb «0.1 (4 π M ₅ ) is exceeded. As the Hb value increases, ao increases and the interaction force F, between the domains decreases. This means that the grid positions are poorly defined and the grid is more easily deformable. As long as the gradient in the bias field creates stresses within the elastic limit for a given grid, the uniformity of the grid is maintained.

For easier construction of systems with grid arrangements, the gradient should be chosen so that cylindrical single wall domains are not locally destroyed by the amplitudes of the prestressing field becoming too large. However, the preamble field should not be so small that the domains outside of the cornerstone run into stripes. If an infinite slope gradient could be provided, no additional force would act on the domains in the lattice. The use of grooves in the magnetic material can lead to very sharp gradients in the preload field. The gradient can run into the grid as long as the local symmetry of the grid is substantially maintained, i.e. h “as long as each domain is surrounded by a fairly even pattern of domlinon. This criterion is of course based on the assumption that a regular grating with a uniform surface constant is used. For certain applications a regular grid is not required and then the gradients can be changed.

The interacting force is for a grid with a few alternating elements just as large as for a grid with many such elements, as your Basis are always only the closest neighbors.

Repulsive border

A repulsive border provides KraTte, which the Interacting elements 32 repel or repel. FtIr Wchwlwlwlkcnde Elomontc with underneath ·

26th

other repulsive forces that exist are the forces delivered by a repulsive boundary in the Lattice area set up inside.

These forces are generally the same on all sides of the grid and are approximately ± 8Η ^ π .

Repulsive boundary structures can be made from current-carrying conductors and from magnetic materials. Changes in the magnetic properties of the material supporting the single wall domains can also be used. Such changes include changes in the layer thickness as well as changes brought about by ion implantation, diffusion, etc. The anisotropy or the magnetization of a magnetic material can be changed locally in order to obtain repulsive forces tm on magnetic interacting elements which are carried by the magnetic material.

Figs. 13A to 13D show some structures for Provision of repulsive limiting forces. Although each of these structures is a lattice of shape of a parallelogram, grids of any shape can of course also be used according to the same principle be delimited. The grid area chosen for illustration is on in a practical system easiest to use. The shapes chosen have the advantage of being easy to manufacture and easy access to input and output of interacting elements in the grid area.

13A shows a basic conductor loop 70, the branches of which are oriented according to the planes of symmetry of the interacting elements forming a hexagonal lattice. The current I _c in the conductor 70 generates a magnetic field which exerts a repulsive force on the interacting elements 32 located within the conductor loop 70.

To local changes in the caused by don Storm /,.im Area 72 where the conductor 70 has its connections to compensate for the generated magnetic field is a llilfslcitcr 74 provided. The auxiliary liter 74 is from Conductor 70 insulates and is only used to create a uniform magnetic field on the ropes of the Giilurbcrciches 30, on which ladder 70 his Has leads.

In IMg. ! 3B several conductors lying in the same plane are used. In this limiting structure, the conductors 76Λ and 766 provide the limiting cranks for the top and bottom of the gate 30, while the conductors 78/1 and 780 provide the limiting lines acting on the left and right side of the grid. Because magnetic discontinuities can exist in the four corners of the grid area, magnetic elements 80 are provided to compensate for them. These are also intended to ensure that the whehisel-acting elements 32 are not lost at the corners of the gate area. Such magnetic elements can e.g. B. consist of a hard magnetic matrix, which has a recoil force on the interacting elements in the lattice. The double arrows 82 represent possible directions of movement of the interacting elements into and out of the grid area 30,

Fig. 13C shows another delimitation line in two planes. The head 84Λ and 840 Hegen z. B. in the first Hcrstellungscbone, while the conductors 86Λ and 86Öln are the second level. An insulating layer is generally provided between the various levels of the door. As in tier Flg. 13B, the double arrows 82 represent possible directions of movement of the interacting elements in the grid area 30.

The Fi g. 13D shows another boundary structure, which is particularly suitable for exerting repulsive forces on such interacting elements as magnetic cylindrical single wall domains in a magnetic medium 62. In this embodiment deliver the current-carrying conductors 88Λ and 88ß repulsive limiting forces at the top and

ίο Underside of the grid area 30. The limiting forces on the left and right edges of the Lattice area 30 are by destruction or suppression of the magnetic properties of the Domains supporting material supplied. The hatched areas 90A and 90S are such areas of the magnetic medium 62, in which the magnetic properties of the material that determine the existence of the magnetic cylindrical single wall domains were destroyed. These areas 90Λ and 9OB can also extend into the area of the conductors 88A and 88ß if necessary. That causes the Magnetic domains cannot drift into the areas 90Λ and 90S, which creates a repulsive effect Exercise limiting force. In this arrangement, therefore, the magnetic domains move in the Grid area 30 in and out of it only in the direction of double arrows 82.

The change in magnetic properties in the areas 90A and 90S can, for example, by

ίο ion implantation or by diffusion of dopants respectively. With such a method, for example, the surface-normal anisotropy of a magnetic medium destroyed. For example, the magnetic material can also be used in these areas

.is removed so that the magnetic Domains can no longer be held there.

In the illustrated arrangements can coagulate magnetic discontinuities occur at the corners of the structures, leading to small changes in the

.i <> limiting force leads. However, the domains represent their diameter and / or their distance from one another in the area of such limiting corners. This Domains later correct their relative positions and grottos as soon as they move away from the corners

■ move \ s away.

Attractive border

Diu 1'ig. 14Λ to Ml) show different structures that provide attractive boundaries and are also suitable as a trimming device. In these examples, the attractive boundary holds a number of interacting elements 32 fixed, and these fixed elements in turn interact with other elements in the lattice in such a way that

thereby a limiting device is formed.

Flg. I4A shows, for example, a limiting device with which the alternating elements 32 in the Gitlerbereich 30 can be kept. In this case the limiting device consists of the conductors

ho % 2A and 92ß as well as the mouthpieces 94. The growing elements 32 can move in and out of the barrel 30 in the direction of the double arrows 82. Moving the elements over the edges defined by the mugnet gap 94

fts away is also possible.

The conductors 92Λ and 92fl carry currents which generate magnetic fields that hold power of the elements within the ollor assembly 30 in FIG

pben beschi

Pull wecl

at the edge

kung der. '

Elements i

plemente ai>

'ij Fig. HB

Limit of

iäiskreten E

iplemente M

jEffect ι

for arrangement

32 cross over;

Edges back

!

^? Figure 14C

■ with discrete

then Eleme

jverden we>

described

elements

Lattice area

Younger

, continuicrlk

> veichem m

.Interact

magnetic

Material

Elements 9 »

pen 98 μ,

magnetised

out and practice

functions.

j In Fig. I.

Send Elei

elements

in and

poppclpfei!

direction of movement

in the grid

j In the Ai

one through

fcstgchaltei

Facility

grip strengths

|> his l'unl

¹ I Fig. HP

those with in

l'bcitct, ii

usfohrun)

he first

YlB in; ie

izichcnck '

! acting

With Fig

hey guide

purifies, ν

id. Flg. I.

η current

agneifelc

omponcr

m medii

lost

related

enn is

agnetlslc

fails,

M'lUuft in

exercise described ben. The magnetic pieces 94 attract interacting elements 32 and hold them firmly to the edges of the grid 30. The interaction of the retained elements 32 with other elements within the grid area limits the elements to the actual grid area.
FIG. 14B shows a delimitation structure which serves as the border of the grid area 30 and which consists entirely of discrete elements 94. Magnet pieces are selected for these elements if the interacting elements 32 are magnetic elements. In this arrangement, the interacting elements 2 can be moved across the lands formed by the magnet pieces 94 into and out of the grid area 30.

14C shows a limiting device both with discrete elements 94 and with continuous elements 96. With the discrete elements 94, interacting elements 32 are held in the manner described above. The continuous elements each form an entire edge of the jitter area 30 and are used to hold even elongated interacting elements 98 in place. Such continuous elements 96 can for example consist of a similar magnetic material, and the 4 interacting elements 98 in this case can have magnetic stripe domains in be a magnetic material, which are then attracted to the said magnetic Ilemcntc%. This Streifcndomäicn 98 in turn exert repulsive forces on yo nagnetische Einzcldomänen 32 within the grid lus and assume in this way the Begrcnzungsunktionen.

In Fig. I4C the magnetic host species Elements more easily into the grid area via the edges defined by the discrete elements 94 lincin and be moved out of it. The double arrows 82 therefore indicate the preferred direction of movement for the interacting elements 32 milliiter area.

In the arrangements according to FIGS. i4A to I4D can The interacting elements formed from these by the attractive limiting device Move facilities away when appropriate access to these elements is provided. This point will be described in more detail later.

■ 'ig. I4D shows another boundary arrangement, ic operates with two-level electrical conductors, similar to that shown in Fig. 13C execution example The ladder 100A and 100 / J are in this way he first fabrication cbcnc and the ladder 102/1 and 02ö in the / wide. Currents btuicn in these ladders n / .iehcndc magnetic fields for the magnetic interaction Elements 32 on.

With Fig. I4E the working of such clektriho ladder using boundary devices is clarified, as they are in the Flg. I3C and I4D shown lid. F i g. 14E shows in cross section the conductor 104 which carries cn current /. This current builds up an ugnctfcld with the components H _k and H _y around the conductor. The do omponcnte / 7, -proceeds essentially perpendicular to [cm medium in which the magnetic elements 32 are rhandon. In the group of interacting magnetic cylindrical single wall domains, the component Hy is parallel to the slight direction of agglutination of the magnetic material in which the domains exist (ie, H _y runs in the direction of the magnetization of the magnetic cylindrical single wall domains).

The course of H _y plotted across the width X of conductor 104 shows that component H _{y is} positive on one strand of the conductor and negative on the other. Accordingly, a single wall domain in the vicinity of the conductor 104 experiences an attractive force or a repulsive force, depending on its position relative to the conductor 104. When the domain experiences a gradient in the field H _y, a moving force is exerted on the domain. Domains move in the direction of the decreasing bias field.

If the domains e.g. B. are magnetized up in the direction of + Hy and are to the right of the positive maximum of H _y , they are moved further to the right as the current / flows through conductor 104. If the same domains are in places between the positive and negative maximum of the field H _} , they move to the left when the current / flows. Further, if these domains are to the left of the left edge of the conductor 104, they will be attracted to the left edge of the conductor as the current / flows through the conductor 104.

By establishing the correct direction of current flow in conductors 100 and 102 (FIG. 14D), the outer edge of the grid area 30 attractive magnetic forces to hold such elements 32. These restrained outer elements 32 then provide the necessary forces to move other elements 32 to keep enclosed in the interior of the grid area 30.

Individual different demarcation devices have been shown which use conductors, magnetic materials or areas of the medium carrying the domains, the properties of which are locally changed. According to the illustration in FIG. 15, these different devices can also be used together in combination. An exemplary embodiment is shown here which is particularly suitable for magnetic cylindrical single wall domains, in which the magnetic medium 62 has a groove 106. An intermediate layer 108 separates the magnetic medium 62 from the overlying conductor 110 which is intended to provide the limiting forces. If the conductor is placed a certain distance from the medium 62, a more uniform distribution of the magnetic field is obtained. The peripheral domains 32 'are attracted to the groove 106, while the domains 32O are enclosed within the lattice by the repulsive effect of the domains 32A held in place. Of course, the groove itself can also have sufficient attractive properties to form a limiting device, while the conductor 110 can be used to introduce domains into the grid from the area of the medium 62 to the left of the groove 106 .

The layer thickness of the magnetic pieces used to form the boundaries is optional. Therefore, such a magnetic piece can also be relatively thick. If interchangeable elements are to be moved over the boundary of the grid, their thickness is chosen so that the attractive forces exerted for the limitation are only so great that they can be transferred from the input device 38 (Fig. 2) to the element 32 into the grid to be moved in and out of it, can be overcome.

Uniform pretension in the magnetic material

The prestressing field Hb can be applied evenly to the magnetic material carrying the individual wound domains

fr

rial. It should be noted, however, that Hb is added to the interaction field Hi in the grating, so that the effective bias field in the grating is greater than outside the grating. The net bias field in the lattice should not be so great that magnetic cylindrical single wall domains in the lattice begin to collapse. However, the outer prestressing field Hb must also not be so small that the cylindrical single wall domains run out in stripe domains outside the grid. In general, Hb is chosen so that the single wall domains outside the grid are just short of the maximum domain size before they run out in strips, and operation within the grid does not lead to a local collapse of the domains.

In general, the applied bias Hb is approximately equal to H- +> Ia (H ₀ - H ₂ ), where

H2 the weakest magnetic field (leakage) and

Hq is the strongest magnetic field (collapse),

in which magnetic cylindrical single wall domains can still exist. For a very close packing in the lattice, Hb is approximately equal to // 2 (this means that H, can be large in the lattice without leading to a local collapse of domains).

With simple arrangements, a uniform prestressing field can easily be achieved throughout the material supporting the individual wall domains. In addition, the interaction forces F-, between the domains are smaller when a bias field is applied. This, in turn, makes it easier to move domains into and out of the grid.

In FIG. 16A, permanent magnets are located in the vicinity of the domain material 62 over the entire area 112 and soft magnetic yoke pieces 114 (Permalloy). The yoke pieces 114 close the path for the magnetic flux of the magnets 112 and cause a uniform distribution of the surface normal magnetic field lines throughout the material.

In Figure 16B, an exchange-coupled layer 116 is in intimate contact with the entire surface of the domain-bearing material 62. The layer 116 consists of magnetically hard material and provides a uniform bias field for the material 62. A suitable material for this exchange-coupled layer is, for example, SmCos in connection with orthoferrite material. If the single wall domain material is a garnet film, a so-called spun garnet film can be used as the exchange-coupled layer, e.g. B. Gd ₃ Fes0i2 as exchange coupler material on single wall domain films made of (EuY) ₃ (GaFe) ₅ Oi ₂ .

In Fig. 16C surrounds a live coil 118 Single wall domain material 62, thereby creating a uniform magnetic bias field across the Material 62.

These pretensioners can be used in various combinations with those shown above Facilities are used and so the magnetic cylindrical single wall domains in the Delimit grid area 30 and in this way keep it in a well-defined area.

the interacting elements 32 are single wall magnetic cylindrical domains. The applied bias field Hb inside the grid can be zero or a small value (including negative values), while outside the grid the applied bias field is adjusted so that the cylindrical; Single wall domains are prevented from flowing into striped canons. In general, a header field outside of the grid area only needs to be present if system functions such as writing, reading, etc. are to be carried out. Outside the grid area you can create larger prestressing fields than within the grid area and you can use different devices for this purpose. The in Wecr | self-acting domains within the lattice bias themselves and stabilize themselves in this way. _;

17A and 17B show devices suitable for magnetic bias fields outside the grid. In Fig. 17A shows how to dM magnetic medium 62, the exchange-gekoppeijejl layers 120 lie'ge of magnetically hard material ^ The layers 120 act so as permanent magnets and provide a / noise voltage in the areas of the magnetic material 62 outside of the mesh portion 30 as described above in connection with Figure 16B. \:

Another suitable means of applying magnetic bias outside the grid is shown in FIG. 17B. The magnetic material 62 is surrounded by permanent magnets 112. In addition, soft magnetic yoke pieces 122 (Permalloy); used to close the path for the magnetic flux of the magnets 112. The yoke pieces 122 lie outside the area 30, so that an applied bias field Hb is only present outside and not inside the grid. In certain parts of the grid area there may be a gradient of the field Hb ! However, this can be used for the formation of limiting devices. Even if the field Hb extends somewhat into the grating area 30 = the grating constant a ₀ does not change significantly,; if the gradient is not too steep. ΐ \

In addition to exchange-coupled layers and permanent magnets, current-carrying conductors can also be attached 'Structure of the / 4 field outside the grid area ^' to be used. The design for this purpose; ■ A suitable ladder pattern should not be suitable for specialists: Be a problem. !

Access to elements in the grid ■

As in connection with FIGS. 10A and 10B !; has been explained, interacting elements 32a generally (but not necessarily) in de'iiv Grid area moved in and out of it ir || Steps corresponding to full rows or columns! For a one-dimensional grid that has only one line or | Contains column of elements, of course, needs nu || i i hii d jl

Magnetic bias
inside and outside the grid area

As has already been said, one can use various magnetic pretensioners when Contains column of elements, of course, needs nu || one element each into or out of the grid Grid to be moved out.

The force required to move interacting elements ¹ into the grid overcomes the repulsive force of the interacting elements within the grid. If no items are present in the grating, spread the grid entered in '\ elements in a manner wherein the energy of the grating becomes a minimum as possible. That is why interacting elements become like this

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length continuously loaded into the grid until a number of elements is reached which forms a regular grid with a given grid spacing a _u . For example, m columns with η elements in each column can be placed in the grid. The grid can then be disturbed if further elements are entered in order to remove incorrect positions or empty spaces from the grid initially formed. This means that after the first formation of the complete grid, new rows or columns of interacting elements are only entered into the grid if a corresponding number is taken from the grid at the same time. This ensures that all incorrect positions and voids have already passed through the grid area and have been removed from it. This process can require one or more cycles in which the grid is allowed to completely revolve.

Another way to create an initial grid from magnetic single wall cylindrical domains consists of first applying a large magnetic field in the plane in order to create the magnetic Saturate medium. After that the magnetic field is released to create any dense arrangement of Get single wall domains. Then the grid becomes magnetic by a perpendicular to the magnetic Material moving and temporally modulated prestressing magnetic field balanced, so a regular one To get lattice.

/ In another method, magnetic cylindrical single-wall domains are created in a layer of magnetic material at selected locations in order to obtain an initial lattice. A permanent magnet with a pattern of openings can e.g. B. be brought into the immediate vicinity of the magnetic layer after it has been heated to a temperature above the Curie temperature T _0. As a result, magnetic cylindrical single wall domains are created point by point in the magnetic board at the points that correspond to the hole pattern in permanent magnets.

Another method of creating an initial filter is to have initial stripe domains Individual domains crushed. A pattern of stripe domains is first created by a magnetic field in the plane to the magnetic layer .. The stripe domains are then shredded so that one rows from Receives single wall domains. Any device can be used for crushing which has a local Magnetic field of sufficient strength generated in a direction perpendicular to the magnetic layer. A recording head can for example be moved one after the other over the stripe pattern so that the Stripes cut and rows of domains produced.

h The for entering elements in the grid or for ! Removal from the grating required force Overcome the energy barrier between the grid and the area outside the grid. The power depends on the degree of separation between the elements inside and outside the grid and is chosen so that it does not significantly disturb the properties of the grating, i.e. i.e., the input and output operations deform the lattice elastically, but the amount of deformation is small enough to cause the lattice to deform relax to its initial uniform wedge can when the force is no longer effective.

In the case of magnetic cylindrical single wall domains will be the gradient in the magnetic field that will provide the input force on the domains to be entered

should be chosen so that these domains do not collapse before they can be entered into the grid. In addition, domains within the lattice can experience forces from the input operation and these domains must not collapse as a result. The domains in the lattice are known to be exposed to the applied bias field H _h and the interaction field H ₁ and therefore an additional force from the magnetic field used to address domains must not generate forces on the domains already in the lattice that are greater than those forces which make the domains collapse.
In general:

H _h +. I H "+ H ₁ , <H ₀ ,

ΔHa

the created header field,
the driving magnetic field for addressing domains in the grid area,
the interaction field between the cylindrical single wall domains and
is the magnetic field leading to the collapse of the cylindrical single wall domains.

The transformation results in:

From these equations it can be seen why an operation at the flow limit of the single wall domains is preferred when working with isolated single wall domains outside the grid area.

The removal of interacting elements from the gilter area is closed with the input operation compare where elements are moved into the grid area. Basically that is Removal or output of the elements is the reverse of the input operation. The elements within the Grids are moved over the energy barrier that delimits the grid area.

For domains within the lattice, the total z-field H i acting on them must be greater than the deliquescence force and less than the collapse force. The driving force used to move domains is the gradient in the z-field over the single wall domains. This force must be sufficient to overcome the coercive effects. The entire z-field H, is given by:

wherein

H ₁

H,

applied field
Drift field and
Interaction field is.

If α is a distance measured in the direction of movement of a single wall domain and d is the domain diameter, then one needs a driving force acting on a single wall domain

to be able to move the domain. Your one

uniform field are Hb ■ - = 0. The partial

η if X

Derivation - ~ always generates forces, the domains from dx ° q _H ,

drift on the gilter. Thus - ~ supports the distance

dx s

elimination of single wall domains from the lattice and prevents the injection of such domains into the Gilter.

With similar devices, interacting elements can in and out of the grid be moved out. Although the insertion of elements into the grid and the removal of Elements from the grid are preferably made with different structures, this is not the only one possible operating mode. The timing of these two operations is not critical and you do not need to to be done at the same time. However, input and output operations can conveniently be carried out at the same time respectively.

If a sufficiently large grid is used, an additional column or row of record interacting elements in the lattice. If the lattice constant or the distance between However, if the columns or rows change by more than 10%, the position of the elements in the grid can be disturbed become, which is undesirable in practical operation. As long as the lattice constant is not significant changes, the timing of the input and output operations is not critical. The time management is generally a function of the grid size and the elasticity of motion of the interacting elements in the grid. There is only one grid shift (either by one column or by one line) for many time cycles of element movement due to the action of the driving devices outside of the actual grid area. The speed of movement of the elements within the grid therefore does not need to be too big.

Depending on the size of the grid, the coercive force etc. one can create a row or column of interacting Enter elements in the grid and transmit the resulting interference through the grid, to expel an output row or column of elements from the grid. The size of a grid, by which sufficient forces can be transmitted through to a group of elements of the grid ejecting is due to damping processes and variables such as the coercive force of the material (when using limited by magnetic single wall domains). The force required to overcome the damping should not be so large that they collapse the magnetic domains on the input side of the Lattice arrangement leads.

Due to the attenuation and the other quantities mentioned, the in the grid when entering The force spreading into the lattice domains decrease with distance in the lattice. When the input force has decreased so much that it is smaller than the coercive force in the equation (1), the next becomes Row of domains in the lattice no longer moves because ^ o the remaining force cannot overcome the coercive force that moves these elements want to prevent. The energy is then stored in a distortion of the grating.

To estimate the number of rows n that can be moved by the fts input force, consider that the gradient required to overcome the coercive force of a simple isolated single wall domain is HJd , where d is the domain diameter.

Assuming now that these Emzelwanddomär.e communicates with (n-1) other domains interact, all as are in a linear chain that they all move simultaneously, and when the field gradient PJL i _sti the first only to the Domain of the chain

dx
acts, then its value must amount to

ψ-nHJd. dx

However, the total difference in H over the domain diameter cannot exceed the value [H _n -H ₂ ) , where H _{0 is} the collapse field and H _{2 is} the flow field. Therefore:

Thus becomes

dtf ^ H ₀ -H _{2 =} «tf £ dx ^ dd

η »(Ha-

Fig. 18 shows a sectional view of a demarcation of interacting elements within a grid and the movement of these elements in the Appropriate facility in grid area. In the drawing, these interacting elements are 32 magnetic cylindrical single wall domains, but other types of interacting ones could also be used Elements can be used just as well. You can also use the facility shown here to create domains can also be extracted from a grid by reversing the operation to be described.

The magnetic material 62 carries on one surface an insulating spacer layer 124 over which the ladder f. 26 and 128 lie. The spacer layer forms what emanates from conductors 126 and 128 Field more uniform but not essential for operation. Current in conductor 126 creates a limiting force for magnetic cylindrical single wall domains in the grid. It is also part of the input device 38 (Fig. 6), with which domains are injected into the lattice arrangement. The grid 30 comprises a portion of magnetic medium 62 to the left of conductor 126 in this drawing. Figures 19A-19E show the operation of the input device 38 in moving magnetic cylindrical single wall domains into the grid. From these drawings it can be seen that the inversion of current polarities in the conductors 12: 6 and 128 domains 32 moved in opposite directions and thereby Domains from the grid 30 outputs. (Since Fig. 18 and Figs. 19A-19E are rotated relative to one another, the upward movement of domains 32 in Figures 19A-19E corresponds to movement into the grid area inside.)

In FIGS. 18, 19A-19E, the domains within the grating area are designated by 32, 4 and the domains to be moved into the grating area with 325 and 32C into the grating area multiple domains can be entered or removed from it at the same time. For example, Fig. 19A shows the Domains 32/4 and 32.4 'in the grid and the domains 32ßund32ß'in movement together.

The domains 32C and 32C also move together. The second row of domains (32,4 ', 32β', 32C)

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_{is not shown} in FIGS. 19B-19E for the sake of simplicity. The current pulses in conductors 126 and; 128 are marked with / ι and h and the direction of movement of the domains is indicated by the arrow 130

To the movement shown in Figs. 19A to 19E To better understand the domains, reference is made to Fig. 14E and the accompanying description. Currents in conductors 126 and 128 create magnetic field gradients acting on the domains through which they Domains can be moved in the desired direction, the domains can also be on top of each other Exercise contact forces that also support the movement in the desired direction.

Fig. 19A shows the location of domains 324, 323, and

32ß 'at time T = O, when the currents I \ and I ₂ in the

Ladders 126 and 128 flow. At this point stands

the domain 32A on the left edge (top) of the conductor

126 in "a position attached to the domains in

Giting area adjoins. At time T = 1 always flow

nor the currents / ι and I ₂ in the conductors 126 and 128 and

create a combined magnetic field between the

two conductors, whereby the domain 32ß in the

Centered between the ladders. The movement of the

Domain 32 exerts a repulsive force on the domain

132/4 so that it is in the gradient field

! moved outside (above) the conductor 126. This

I gradient field lets domain 32A further into the

I move the grille into it.

At time T = 2 (FIG. 19C), current I _{2 is} reversed and domain 32C moves upward through the attractive gradient field created in conductor 128 by current h. As a result, an interaction force is exerted on the domain 32 [beta] which allows it to be partially moved under the conductor 126. At the same time, the domain 32, 4 moves further into the grid area as a result of the gradient field generated in the conductor 126 by the current /.

19D shows the position of the domains at time 7 = 3. The direction of the current h has been reversed, thereby creating an attractive gradient magnetic field for the domain 32 [beta]. As domain 32C moves further under conductor 128 by the repulsive force from the following domain (not shown), it causes domain 32β to move into the attractive gradient created by current / ι in conductor 126 . Thus, BEV / 32SS, the domain of the upper edge under the egt conductor 126 in 'a position on the center of this conductor f (Fig. 19D)

19E shows the position of the domains 32 at the time IT = 4. The direction of the current I ₂ has been reversed again, and the current Λ flows in the same direction. Domain 32C now experiences a display force by which it is jerked in the direction of arrow 130 and moves to a position below the top edge of conductor 128. Domains 323 and 32C experience no thrust from domain 32C or in the gradient magnetic field, so that they remain in roughly the same position. These positions correspond to the location of domains 32, 4 and 32 [beta] in FIGS. 18 and W, ie the situation at time T = 0 is restored. During the next cycle of operations, another row of domains is entered into the grid area in the same way.

J Then, operational values will be given as an example of the addressing operation described with reference to Figs. 18 and 19A-19E. Cylindrical single wall domains with diameter d can be used as interacting elements 32 for movement into a grid area through conductors whose width is approximately a _o / 2, whose center-to-center distance is approximately <^# 10 and whose thickness is approximately> / 2 to 1 micron. The current amplitudes in these conductors are between 30 and 50 milliamperes and the pulse duration of these currents is around 0.5 microseconds. These values generate magnetic fields that help to overcome the coercive force of the

ίο sufficient magnetic medium.

Fig.20 shows another arrangement, the input device 38 for magnetic cylindrical Single wall domains which are used as interacting elements 32 in the grid arrangement 30 be used.

The magnetic layer 62 is provided with an insulating coating 124 on which the conductors 126 and 128 are arranged. The magnetic medium 62 has a recess 132 which acts as a limiting device for the

ao magnetic single wall domains 32 within the Grid area 30 is used. Accordingly, inputs to or outputs from the grid area 30 run Domains pass under the groove or recess 132 and have under during that pass the groove has a reduced height. The groove can be a recess in the surface of the material 62 or a be magnetically changed area in the material 62. As mentioned above, this can be done by such methods like implantation of ions or diffusion of

jo reach suitable dopants.

The input device 38 in FIG. 20 operates in the same way as it does for FIGS. 18 and 19A-19E has been described, d. i.e., appropriately directed currents in conductors 126 and 128 move domains 32 'in the grid area 30 into it. When the polarity of these current trains is reversed, domains 32 moved out of the grid area to the right in the grid.

Fig. 21 illustrates an arrangement with which magnetisehe cylindrical single wall domains 32 are moved in and out of the grid area 30 and explains the principle of addressing or access to the domains in the grid. The Gitler area 30 is shown as a regular grid for illustration purposes, which is closed off by a limiting device 34 is. In this case, this is a conductor arrangement through which currents flow in the specified directions. The domains 32 are simultaneously in and out of the grid in rows moved the same relative positions to each other. Preservation of information while moving the This means that domains through the system are secured.

In the drawing there are three conductors A, B and C above the grid, corresponding conductors A '. β 'and C lie below the grid 30. The channel between the conductors A and B is shown hatched to indicate that this channel is a shift register SR for moving domains in the channel before they enter the grid area or before they exit

to the grid area. In the same way, the channel between the conductors A ' and B' defines a further shift register SR in which the domains can be moved before or after the addressing.

The F i g. 22A to 22G illustrate the operational

fts to inject domains into the grid 30 and remove the domains from the grid. Several time cycles T = 1, 2, ... J are shown, in which the current directions in the conductors

38

A, B, C, A '. B ' and C are indicated by the arrowheads on the conductors.

At time T = t (FIG. 22A), for example, the domain 32 is injected into the grid 30, while the domain 32 ′ is removed from the gilter 30. Currents flow in conductors A and β as well as A 'and C' in the direction indicated by the arrows.

At time 7 = 2 (Fig. 22B) a current flows in conductor C and conductor A. This moves the domain 32 to the edge of the conductor C. During time 7 = 2, current flows in conductors Λ 'and C ", and thus domain 32' moves to the lower edge of conductor C.

The F i g. 22C and 22D show the next pulse train in the conductors. These pulses generate magnetic fields which move domain 32 into the grid and move domain 32 'out of the grid into the shift register area between conductors Λ ' and B '. The series of F i g. 22A to 22D thus show the injection of a domain 32 into the lattice region 30 and the ejection of the domain 32 ′ out of the lattice region 30.

The series of FIGS. 22E-22G together with the repeated FIG. 22D shows the reverse operation of the arrangement shown in FIG. In these figures, the domain 32 is to be moved from a position within the grid 30 into the shift register area SR between the conductors A and B. The domain 32 is also to be moved into a position in the grid 30 from the shift register area SR between the conductors A ′ and β ′. The sequence of operations in the time segments 7 ″ = 4 to 7 = 7 inclusive is shown in these figures and can be easily understood from the preceding description.

In describing Figures 21 and 22A-22G it was assumed that the interacting elements 32 are magnetic cylindrical single wall domains. However, this arrangement can be used with any type of interacting elements and shows the movement of such elements in the Grid area 30 in and out of it, the operation of the arrangement shown in Figure 21 was described for the special case in which the Wcchsclwii'kcnding elements 32 magnetic cylindrical Are single-wall domains. The in the Fig.22Λ to For example, the procedure illustrated in Figure 22G was performed on a single wall domain granut film of the composition

demonstrated, which was cpiiakiisch grown from the liquid Plutsc u on a suitable substrate. The film had a thickness of 4.8 microns and the diameter of the wound dome was about 5 microns, in a uniform pre-tensioned field H, of unfilled '80 oc throughout the film. The conductors A, I), C ₁ A ', / i ' and C were 4 microns wide and 1.5 microns thick. A current of 20 milliamps flowed through the restricting means 34. The amplitudes of the following wiiren by the Überirngung.sleiier A, I), C, A ',' 'and Cfließenden current, the current in the conductors Il C, Ii' Chat amplitudes of 30 milliamps. The current in conductors A and A ' has amplitudes of 25 million. The magnetization of the Do mil 11 cn was directed upwards in the plane of the drawing. The dimensions of the grid arrangement and the spacing between the conductors are given in ΙΊ g. 21 »ngcgcbcu. I) Ic is the pulse duration for the movement of the domes

not critical and depends on how quickly the ;; «
Moving domains in magnetic material, impulses · ;;
of a duration of about 0.3 microseconds or ^ -
more are z. B. for many materials from iron grenades |; |
suitable with rare earths. . ^ ß

Those present in magnetic materials ^
Coercive force implies the movement of the cylindrical ij
Single wall domains a certain resistance
gen. To these coercive forces in the material · ump?
overcome and thereby more flexible cylindrical ^ «
There are several ways to get single wall domains | f
Proceedings. In particular, the value η ^ efc
Number of single wall domains that are created by a jp
Input force to be moved is increased. Figs. 23 and p
indicate such procedures with which the movement
magnetic cylindrical single wall ^{domains und} | I |
can be supported. , fsK

In Fig. 23 is the magnetic medium 62 of Einj
current-carrying coil 134 surrounded. In the coil 13
current impulses are generated, which a change before
tension field essentially parallel to the easy Magi
tization axis generated in the magnetic medium 62 ?!
If necessary, pulsed can also be applied to the coil 134
Direct current or rectified alternating current on
be placed. These current pulses in the coil i3J
generate a magnetic field, which the magneu
cylindrical single wall domains in the material
can vibrate without collapsing
The vibrations of the domains facilitate them
Adopting the configuration of minimum energy,
the structure of a regular hexagonal lattice. ,
The oscillating header field has roughly this ^ |
Force like the coercive force in the ^ explained above
Force equation (1). That means that on the zy »nwy
see single wall domains through the swinging r «;
the force exerted is sufficient to reduce the coercive force «!
overcome and a small periodic change
in the diameter of the domains « ■
oscillating field, the amplitude of which is approximately Wcifc
sufficient. The Wcchsclvorspannfcld is generally ^:.,
arranged that it is over the entire grid areaC |
acts uniformly. ^ i

Fig. 24 suggests another method for easier,
Movement of magnetic cylindrical I.
domHncn in the magnetic material 62.
Establishment of this type is particularly suitable
Support of the movement of magneticι zy
three wall domains in the grid area.

Such a »Fcger chtui
from at least one conductor, such as the Lcltofe and / or 138, which is generally at least as DTP! How the dome diameter, but also oil “can reach several dome diameters”, current flowing through this conductor h ;: ° Magnetic fields which support the movement of the dome magnetic medium. The mugneifclder built up by the river break up into smaller parts of the world. so that the cathedral can move more easily in these parts. The ladder 136 and 138 produced the largest mugneti * darr of course not be so large that any single wall domains in the ceiling are broken. A magnetic field with the same strength as the magnetic field for In domains In the lattice is sufficient, in general ^ for those of the conductors 136 and 138 or ""! Mugnetfields have the same limit values as above, ie the magnetic fields should nlcmtf

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cause more severe disturbances in the grid (to keep the information in the correct relative positions) or even a breakdown of domains in the lattice.

The description given so far for access to the s Information entered into and extracted from the grid area generally applies to any kind of interacting elements 32. When considering the leader field to change the Diameter size is the description on magnetisehe cylindrical single wall domains directed. The ones used to move interacting elements Methods directed towards the forces required and the methods provided for such movement of these elements However, arrays can also be used with other types of interacting elements will. A facility as shown in FIG. 24 can be interacting with any type of magnetic Elements are used and modified accordingly.

Transmission: isolated elements - interacting elements

This section is particularly concerned with the movement of interacting elements into the Grid in and out of the grid in a way that reflects the change in the force of interaction between the elements. In particular, issues related to the use are discussed of magnetic cylindrical single wall domains as interacting elements. Operations on single wall domains outside the lattice area may require, for example, that these single wall domains are isolated, d. h "in that Meaning isolated that interactions between the 3s Domains do not significantly affect their relative position to one another. In contrast, single wound domains have positions within the grid that are essentially determined by those between them Interaction forces are determined. . | o

Another problem associated with cylindrical single wall domains is the effects of a bias field on interacting elements within the lattice. As others have said, erhöhl outside the grid, the applied bias field /// in. | S general, the tendency to form isolated Einzelwanddomllnen, wilhrend low within the lattice, the effective bias isl because an interacting magnetic Feldvorspunnung Hi seihst by Eitizclwtinddomünen available A similar lead can be placed over the whole magnetic medium. Also, a larger prestress field lh can be placed outside the gland area than within the lattice bridge, so that the net prestress field H, * Hi, -1- /// is approximately equal over the entire magnetic material ,

To move interacting elements from isolated positions into and crc positions in which they are in strong interaction with one another, konneu («> various facilities can be provided. FIGS. 25 and 26 illustrate a device which geometrically shaped domes,

The FI g. 25 shows the principle. The Domllncn 32 hover z. B. a distance of 4c /, if they are still isolated from each other (<). These are to be brought to the oil tterberck'h 30, where their distance was only about 2rf Bringing domains within the lattice is roughly equal to the force required to overcome the boundary forces that occur when domains are placed in or out of the lattice longer distance S, so that the change is more gradual and the holding forces acting on the domains when they move over the distance 5 are only fractions of the forces that would be required for the direct input of the domains into the grid area and only determined by the desired smoothness of the transition.

If single wall magnetic cylindrical domains are used as interacting elements, their size will change as they move towards grid 30 unless the net bias field H ₇ remains relatively constant. F i g. 26 shows the course of magnetic fields that come close to this state. The applied prestressing field Hb decreases along the way, the closer the individual wall domains come to the grid area. This compensates for the increase in the interacting magnetic bias field H i, which is due to the fact that the domains come closer and closer together as they move towards the grid. If necessary, an applied bias field Hb can be provided in the area outside the grid as long as the net bias field on the domains is not large enough to cause domains to collapse. The bias field can also be large enough to prevent the domains from flowing into stripe domains if they are as far apart as possible, ie if they are isolated domains.

Outside the grid area, a field Hb can be provided by means of various devices. One of them consists of permanent magnets and magnetically soft elements, the distance between the magnetically soft elements and the single wall domain material becoming greater the closer you get to the grid area 30. Another suitable means may use a permanent magnet of varying thickness. Another device uses conductors that follow the directions of the domains to the grid, as described in the context of FIG. 27 are described.

These principles apply to any kind of interactive Elements 32. When the elements conform to the rule of law, they come closer together and their interactions increase. Hence, a facility must be provided to keep them within delimiting the restricted area as they move towards the grid, these delimiting forces is similar to the constraints that must be exercised to maintain a grid,

In the ideal, the magnetic, cylindrical kin / wound domes have such a diameter that they neither collapse nor dissolve in the magnetic medium. F i g. 26 shows the course of a preload with which this is achieved. Dus unplaced Vorspunnfcld Hb is iiußcrhulb of Gittcrberclches large and small within the Gitlcrberclehcs, wilhrend dus Wcehselwirkungsvorspannfcld Hi of Clittcrbcrcichcs ttußerhulb small and is large within the Gittcrbcroichcs. The combination of Wo and Hi lies across the entire magnetic medium between uk / .eptable values,

DIc F i μ, 27 shows a device for moving

709 030/314

Domains from a writing device 36 into a grating area 30 and out of the grating area 30 out into a reading device 42. The input device 38 and the output device 40 cooperate Head arrangements and can, for. B. be the facilities described in the previous s section.

Specifically, a geometric simple and fanning out is provided in which the domains 32 move from the left into the grid area 30 and then to the right into the reading device 42. Domains 32 ι ο move from the writing device 36 in the direction of the arrows 140 under the action of the drive structure, which is shown here for illustration as consisting of soft magnetic T-bars and I-bars 142. In this area, the cylindrical single wall domains are isolated domains, and an applied bias field Hb is therefore provided. Inevitably moving isolated domains by means of a structure 142 is known per se. For this purpose, a rotating driving magnetic field is provided in the layer plane. In FIG. 27, the layer of the magnetic material 62 is not shown in order to simplify the illustration.

The domains 32 arriving in the rightmost pole position of the T-bars 144 are still separated from one another by a distance 4 d and are now ready for a step-by-step movement of the packing becoming more dense in order to gain access to the grid area 30. The equipment required for this consists of the drive ladders Pl, P2, P3, P4, P5i and P6. The conductor P6 can also be part of the limiting device for the grid arrangement and likewise part of the input device 38 for moving the domains 32 into the grid area 30. These devices and their operation have been described above. The driving device also has a device 146 with which the domains are kept on their path as they move towards the grid area 30. In the case of magnetic cylindrical single-wall domains, this device 146 is simply formed by grooves in the magnetic material or by regions with ion implantation, as a result of which defined channels are created for further guiding the domains in the direction of the lattice region.

Miltds of a limiting device 34 becomes the. | S Maintained the shape of the grid 30, and there are Dcgrcn / imgskrilfic lüngs of the simple and Ausfucher · facilities exercised. The means 34 is best formed by conductors which currents in through it the arrows point to the ladders in an unspecified direction to lead.

The movement of domes around the grid area is carried out by sequential current pulses in conductors P1 to P6. The domains are moved in the manner explained above with reference to FIGS. 19A to 19E ss. The guide channel device 14 (5 ensures that the domes remain on the corresponding path, even if they are brought closer to the grid and do not separate in order to try to compensate for the increasing reciprocal forces as they approach the oilier Limiting forces applied by the currents in the conductors 34 can, however, possibly also maintain the relative gap between the changing domains, so that the device 146 is not necessary of the domains from the grid area woj? and thus move the domains together with the forces developed by the currents in the conductors 34 from the isolated positions (distance = 4 d) to interaction positions (distance = 2 d) at the entrance area of the grid the input device 38 includes a series of domains 32 in the grid area in that described above n kind of a.

The output from the grid is very similar to the input. The output device 40 operates as described above, and the conductors for transporting the domains 32 out of the grid area in Positions where they are isolated from one another are denoted by P'1, P'2, P'3, P'4, P'5 and P'6. Also Here, the domains 42 can be channeled away from the grid 30 by means of the device 146.

When the domains 32 reach the left pole positions of the T-bars 148, they are again at a distance of approximately 4 d from one another and can then be transported to the right as isolated domains in the direction of the arrows 150 with the guide device 152.

Domains 32 which are moved by the driving and guiding device 152 and which carry information can be brought into the reading device 42 in order to sense their physical properties. ^r ; As on the input side of the grid, an applied preload field Hh is also used here if the. interacting elements are magnetic cylindrical single wall domains. Then the same considerations apply as above.

In Fig. 28 is schematic and in FIG. 29 shows in detail another device for moving domains from the grating area 30 into the reading device 42 or from the writing device 36 into the grating area 30. FIGS. 30 and 31 show the order of the conductors of FIG. 29 applied currents for moving the domains, while FIG. 31 shows the position of individual domains at the times which correspond to the application of the various current pulses. F i g. FIG. 28 is a block diagram showing the reversible operation of the operations shown in FIG. 29 reproduced facility. It consists essentially of the grid 30, a transfer register 154, a shift register 156, the writing device 36 and the writing device 42. Information can flow from the writing device 36 to register 156 and then to transfer register 154, br-or it into the grid 30 arrives. Domains 32 can also move from grid 30, into translation control 154, and then into shift register 156, and finally into reader 42. Depending on the sequence of the unassigned current pulses, one thus obtains movement of the domes 32 in both directions in the registers 134 and 156.

The shift register 156 contains »1 bit positions, the register being loaded with /» / 2 domains. These are isolated domains in which the interactions are minimal. Illustratively, the distance between the domes is 4 d, and the total volume is therefore 2 dm. Other spacings could also be used.

The transfer register 134 contains two stages which connect the shift register 136 and a grid 30 to one another. In the step closest to the Öltter, the transfer register 134 contains m domains with a mutual distance of 2 rf, while the second step contains m / 2 isolated domains with a mutual distance of 4 d . The

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lim register 156 filled with domains.

29 shows a schematic of the structure of the transfer register 154 and the shift register 156. The grid 30 contains domains 32 within the limiting device 34. The domains in the grid are denoted by the small letters a, bc .., η, ο, ρ . The

! Transfer register 154 contains multiple conductors A; B; C and D, whereby to define possible positions which the domains can occupy, the designations 1.1,1.2,1.3,2.1,2.2,3.1,3.2,3.3,4.1,4.2,5.1,5.2, | 5.3, 6.1, 6.2, 7.1, 7.2, 7.3, 8.1 and 8.2 can be used. These permalloy spots can also be replaced by depressions or by areas with ion implantation in the magnetic material 62. Their only function is to provide preferred parts to delimit the paths that the domains follow in their transport from the grid or to the itter 30. The paths occupied by the domains in shift register 154 are indicated by the double arrows in this register. The arrows indicate that the domains can be removed from the grid or introduced into the grid using the same tracks.

. The shift register 156 has a preferred path for the domain movement in the direction of arrow 158. The movement of the domains takes place through the permalloy structure 160 arranged between the conductors C and D. The permalloy 160 has a width and width that varies over its length acts in this way as a guide for moving the domains in the direction of the arrow 158. If necessary, the structure 160 can also be a G-groove in the magnetic material 162 which, as shown in FIG. 29 has varying widths. This structure 160 can also be replaced by a sequence of! Permalloy triangles, the tip of which points to the left, in order to move the domains in the direction of the arrow 158 . Domains in shift register 156 are generally isolated from one another, and any type of drive and routing structure is suitable.
Before describing the sequence of pulses applied to conductors A to D , reference is made to the fact that domains removed from the grid 30 run in paths indicated by arrows in FIG. 154 , which they bring into shift register 156. The domain α follows e.g. B. "Iw path 1.1, 1.2, 1.3 and 1.4 to get into the shift register%. The domain b follows a path 2.1,2.2, .2, 1.3 and 1.4 in order to be in the shift register 1S6. Iode second domttnc ii , c, c and g thus follow in a generally straight path from their position in section 30 to the corresponding position in slide register 136. On the other hand, domains b, d / "and / i, which are not straight, run in suspicions partially coincide with the barrel of the first-mentioned cathedral to the Sehicbercister 156.

Preferred paths for the domes can be provided in generally known ways, for example including the filling of grooves in the magnetic material 62. In addition, deposits of magnetic material such as permalloy can be deposited on the material 62. Wolterhin the properties of the material can be changed locally, for example by ion implantation. The domains are grounded by magnetic folds in the conductors A to D i / .eugte Magnetfoldgi'iidlonton on these groynes

Domains can only move in one or both directions.

Figures 30 and 31 show the order of the applied current pulses and the corresponding positions of the domains during the carry and shift operations. An arbitrary scheme was chosen to denote the polarity of these current pulses. The letter L says the left edge

of the conductor AD attracts the domains, while the

right side it takes off. The letter R is the name for the opposite effect, that is, the right edge of the conductor attracts the domains while the left edge repels them. The polarities actually used depend on where the pulses are injected into the conductors and what the direction of magnetization is in the cylindrical single wall domains.

For conductors A to D in FIG. 29, the widths and the spacings are chosen so that the magnetic field generated by the current pulses in these conductors moves the domains through the transfer register in a manner similar to that described above in connection with FIGS. 19A through 19E. If you take z. For example, suppose that a domain was attracted to the left edge of the conductor and then a β pulse was applied, this means that the right edge of the conductor attracts the domain while the left edge repels it. If this domain is near the left edge of the conductor but not below it, it will experience greater force from the left edge of the conductor and will be pushed away from the conductor to the left. On the other hand, if the domain was initially under the left edge of the conductor, it will be attracted to the right and pushed away from the left, and consequently will move under the conductor to the right edge. Since the magnetic field gradients generated by the currents in the conductors extend over a considerable distance from the conductor, the cylinder domains can be adjusted relative to the conductor in such a way that one of these two situations applies. Adjustment is easy by applying current pulses to neighboring conductors.

In Fig. 29, the conductors A to D are shown as individual lines. In a practical installation, however, the width of the ladder is comparable to the diameter of the cylindrical domes and the position of the domains is selected so that the desired movement is produced, ie the principles described in connection with FIGS. 14E and 19Λ to 1911 also apply here.

I- i g. 30 /.cigl in a table the 16 stream pulses that form the basic shift cycle. F i g. 31 shows, in a table below, the positions of the 16 cylinder domes "to ρ after each step of the first two cycles of the Schleb composition. From position 0 in shift register 156 the domain moves downward in the direction of arrow 158. Position 84 of shift register 156 is used when the shift register is connected to another arrangement (grid) or to writing device 36.

Transfer register 154 and shift register 136 set the domains in shift register 156 in double the distance as it is in grid 30. When greater separation is desired, achieved It can simply be crossed by an additional conductor a further introduction or discharge step in proportion 2: 1.

If one of the two conductors A or ö In Fi g. 29 is not activated by a current pulse, there is also no transmission. If conductor A doesn't

l \

IO

is activated, the force generated by a current pulse in conductor B is not sufficient to pull the domains behind the delimitation 1Λ. If the conductor A is excited solely by a current pulse, then the domains are repelled by the boundary 34 in step 9 of the applied pulse train. Thus, conductors A and B can also function as input / output control members.

As a further alternative, one can use ladders A; B; C and D also perform transfer operations to and from multiple grids on the same magnetic medium 62. If these conductors are combined in groups, you can select any grid arrangement via decoding.

As can be seen from FIGS. 30 and 31, the transmission process is automatically synchronized with the current pulse train in conductors A, B. If the pulse sequence begins with any step other than step 1, then during the remainder of the current pulse Sub-cycle nothing, and the correct transfer operation begins with step 1 of the following cycle.

The tables in FIG. 30 and 31 referenced. In this operation, the domains a, b, ... Λ are to be taken from the grid area 30 and brought into the shift register 156. The domains i, j, ..., Ρ are then removed from the grid area 30 and placed in the shift register 156 . At time 1, current flows in conductors A and D, which attract the single wall domains a, b, .., Λ. These domains are therefore moved to positions 1.1, 2.1, 3.1, ..., 8.1. At this time, the current flowing in the conductors C and D has no effect on the domains a through h coming out of the grid 30.

At time 2 the direction of the current in conductor B is reversed, and this makes the left edge of conductor B repulsive. The domains a to h therefore keep their respective positions.

During times 3 through 8, currents flow in conductors C and D to complete the operation for domains in transfer register 154 and shift register 156. No current flows in conductors A and B during steps 3 to 8.

In step 9, the direction of the current in conductors A and S is reversed from the direction in steps 1 and 2. At this point in time, a current flows in conductor A , making the right edge of the conductor attractive and the left edge repulsive. At the same time the left edge is attractive due to the current pulse in conductor B and the right edge is repulsive. During this step, domains a through h move one step. The domain a moves e.g. B. from position 1.1 to position 1.2, while domain b moves from position 2.1 to position 2.2. All domains a to h move accordingly in the sequence of the current pulses during the application of the current pulses to the conductors A and B in step 9.

In step 10 of the sequence there is no current pulse on conductor A , and the current pulse in conductor ß has changed its (> u direction. At this time, conductor C is conducting current, so that its left edge becomes attractive. Domains near conductor B consequently experience a force through the conductors B and C, and thus the domains <■), c, e and g move. The domain a moves e.g. B. during this time from position 1.2 to position 1.3, and domains b, d, f and Λ retain their positions.

At line 11, conductors C and Dan repel domains from their left edge. As a result, domains a, c, e and g move to the next position. The domain a moves e.g. B. from position 1.3 to position 1.4, while domain c moves from position 3.3 to position 3.4. This movement occurs because the domains are sufficiently far below conductor C to experience the attractive force from the right side of that conductor and not the repulsive force from the left side.

At time 12 of the sequence, the current directions in conductors C and D are reversed. This means that the left edge of these conductors will be attractive to the domains and the right edge will be repulsive. During this step, domains a, c, e and g move. The domain a moves e.g. B. from position 1.4 to position 0 in shift register 156, while domain c moves from position 3.4 to position 2.4. The domains a, c, e and g, which were set in the shift register 156 by the previous step, thus now begin to move in the shift register 156 in the direction of the arrow 158. These domains can then be read and fed back into the grating or, if necessary, fed out into various other regions of the magnetic layer. As shown in FIG. 31 can be seen, the domains a, d, and h move from their second position only at time 16 of this sequence. At this point in time they begin to move in the paths previously traversed by domains a, c, e and g in order to get into shift register 156 . When you reach register 156 , move down in register 156 in the direction of arrow 158 .

The movement of the next series of domains / jj, ..., p of the grid area 30 is similar. These domains / 'to ρ begin to move at time 17 zii, and then they move, starting at time 24, to shift register 156. As with domains a to h, the second domains in each case in the series / to move first ρ and then the others. For example, the domains move i, k, in and ο to the shift register 156 before the domains j, I, and η ρ move because the last named group partially _w must run on the same way depending on the first group. The second row of domains uses the same paths as the domains in the first row. For example, domain / follows the same path as domain a and domain j the same path as domain b.

From the F i g. 30 and 31 it can be seen that groups of m (total number of domains in a row) are shifted by transfer register 154 into shift register 156 at a time. Conversely, domains from shift register 156 can be moved into the grid area as well by reversing the polarity of the currents in the pulse order on conductors A through D.

The width of the conductors A to D can be chosen so that it corresponds approximately to the diameter of the cylindrical single wall domains. The center-to-center spacing of the conductors is best chosen to be twice as large as the width.

This sequence of current pulses can also be ordered differently with external buffers. With various Those modifications of this scheme can move domains from the lattice area into areas of isolated Domains and from them back into the Gitlerbereich. Also, larger

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Introductory and lending capacities are provided ; pas basic scheme also works when the change acting elements do not consist of magnetic cylindrical single wall domains. In some cases are these elements in opposition to single wall donri - Jen insensitive to a leader field, so the Distance between the individual interacting elements not always with a special method Must be changed. Also needs with magnetic cylindrical single wall domains the spacing does not necessarily have to be changed when the ppmans taken from the grid area or put into the grid area from an external area will.

.; ':' ■; ■ Coded interacting elements

^; Information can be assigned to vCipien interacting elements 32. These elements consist of; kinetic cylindrical single / wall domains, can ^? \ heri ', various physical properties of the

■ Danish to distinguish the one kind of "Domains used by those of a different kind and

because of the coding of information by own ; sbjjaften the domains are enabled. The Wandei

leflscfiaften various types of magnetic cylindrical

risehir · single wall domains are particularly suitable for; the ^s podierung of information. For other types of magnetic interacting elements, I ^; a * Coding according to the physical appearance

picture suitable. For example, the following sections under this wine press heading show different ones sf ^ j ^ n of the possible coding if the inter- <; kenänen elements information is to be assigned.

L ·. ^ Coding of cylindrical single wall domains: rock - hard / soft domains

ϊϊΐΕ:.:

A first type of coding is existence

!! ^ called "harder" and "softer" more magnetic

S | yjindrjscher single wall domains are used to store data

S '^ elaborate system in which the

linfofinction through various domain properties

^S ? 4s | JI is transmitted. Under a tough domain

fverftefitjnan a cylindrical single wall domain, the

Flinif 'large number of vertical Bloch lines in their

fÖpiäpenwand and which only with higher prestressing

||| f | rn collapses; under a "soft" domain

in ^ lr you have a domain that is only a minor one

l ^ nghl or no vertical blochiinien in their

f'Cjmnänenwand has. These different types of

ipffrjähen are, for example, by A. P. M a 1 ο ζ e -

itfifft-J " ^A PP ^song Physics Letters, 21, 149 (1972),

ialf |! hjiicher described.

4 ^ §j!; & 32 shows a facility for writing ^ Information by means of hard / soft coding of magnetic * '1 | i | cii; 5n cylindrical single wall domains as interacting Elements, while F i g. 33 shows the reading operation when the information is through hard / soft magnetic single wall domains is stored.

Dip device according to fig. 32 Musler can whore from and soft magnetic cylindrical single-wall domes for coding information (e.g. binary information). According to the above / mentioned patent application, if necessary more than two information values are generated for higher-order digital codings.

The magnetic medium 62 carries magnetic cylindrical single-walled domains. A generator for hard domains 160 consists essentially of a current-carrying coil 162, which is connected to a direct voltage source 164 for the bias voltage and to an olram pulse source 166, which can optionally be connected in parallel to direct voltage source 164 by means of switch 168. A plurality of current-conducting conductors 170 / 1,170f and 170C are provided within the area enclosed by the coil 162. Uiese conductors are connected to current sources (not shown) which carry the currents U. Ib. Send Ic through ladder 170 / \ to 170C.

Also located within the coil 162 is a guide device 172, which consists for example of T- and I-bar patterns of magnetically soft material, such as permalloy. The Pleiles 174 of the plane of the magnetic layer move in the guide device 172 introduced domains in the direction due to the rotation of the magnetic I reibfeldes Hin 62. LJie guide 172 may also drive currents leading conductor pattern instead of the soft magnetic material in conjunction with magnetic drive fields contain.

The operation of the generator 160 for hard single-wall domains depends on whether in the area of the coil 162 alternating magnetic fields are effective. These magnetic fields act on stripe domains 176 and chop these up into smaller domains, the walls of which contain vertical Bloch lines.

The DC voltage of the bias field H ₂ in the coil 162 is provided by the DC voltage source 164. Changes in the overall bias field within coil 162 are caused by superimposed current pulses generated by pulse source 166. Initially, the source 166 emits a negative pulse to lower the effective bias field in the area of the coil 162. This creates an area that is attractive for magnetic stripe domains 176, so that these types of domains move in the area of the coil 162. A positive pulse is then generated by the power source 166 and the level of the bias field removed above the DC level. The stripe domains 176 are chopped up by sufficiently short and strong pulses. The number of hard domains created in this way increases with the number of pulses applied. Thereafter, the preload field in the area of the domain destruction coil is greatly increased in order to collapse all domains with the exception of the hard domains. As a result, after chopping and penalizing any soft domains in the area of the coil 162, only hard magnetic cylindrical single-wall domains remain.

These hard domains are then brought into the vicinity of the guide device 172 by applying appropriate current pulses to the conductors 170/4 to 170C. The magnetic fields created by the currents in these conductors create bias field gradients. which pull the hard domains into the vicinity of the guide and transport device 172. Once there, the domains are attracted to forming magnetic poles on the T and I beams, depending on how the rotating propellant H is rotated. The hard domains then continue in the direction of arrow 174.

As a representative example, hard domains were created in a magnetic layer 5.25 microns thick.

r \

which the composition

50

had. The bias field pulses applied to magnetic layer 62 were generally between 10 Oe and 50 Oe and had a duration of about 0.2 to 10 microseconds. The number of pulses applied by the source Wa is practically unlimited from the number 1 onwards and generally depends on the distribution of the different types of domains which are to be generated. As the number of pulses increases, the probability increases that domains with a larger number of vertical Bloch lines will be generated. The longer the applied current impulses last, the greater the probability that domains with a smaller number of vertical Bloch lines will collapse. The size of the last current pulse is chosen so that all domains in coil 162 collapse with the exception of those which have the desired minimum number of vertical Bloch lines in their domain wall. This ensures that you get enough hard single wall domains for the operation you want.

The size of the applied current pulses usually depends to a certain extent on the magnetization 4 π M _{5 of} the magnetic layer 62. As Απ M _s increases, larger magnetic bias pulses are required to create the hard domains. In general, applied bias field pulses as large as 50% of 4 η M _{s are} acceptable.

The longer the applied chopper pulses last, the greater the chance of chopping. After that is the longer the applied, the greater the likelihood of breaking the domain convergence in the coil 162 Current pulses last.

In FIG. 32, the hard domain generator 160 is part of the entire writing device 36 (FIG. 6) with which a pattern of encoded information is to be provided. The hard domains are therefore combined with the soft domains from a normal domain generator 178. The final output from the writer 36 is then a pattern of mixed hard and soft domains moving in the direction of the arrow 180 towards the input device 38. In the exemplary embodiment shown in FIG. 32, the hard domains bring about the transfer of soft domains to the information stream which is applied to the input device 38.

The hard domain generator t «0 generates a pattern of hard domains moving in the direction of arrow 174. These hard domains are moved further by the transport device 182, which consists, for example, of a pattern of soft magnetic T- and I-bars. A live coil 184 provides a magnetic field in the direction of the bias magnetic field Hb at pole position 1 of the T-bar 186.

The generator 178 consists of a disk 188 of magnetically soft material, such as permalloy, and an additional layer 190 of magnetically soft material, such as permalloy, which is in exchange coupling with the medium 62. Layer ISO suppresses hard domains created by generator 178. Soft domains are provided in each cycle of the drive field H revolution. These soft domains continue to transport device 182 and follow

repeated pole patterns 2, 3 and 4 on the T-bar
Soft domain generator 178 also includes
a'L-bar 194, which is used as a destruction for the i _m
Generator 178 generated soft domains is used, if
these are not processed further. Under certain .;
The generator 178
domains generated diverted to annihilator 194 and;
do not get into the information pattern, which _:
via the transport device 182 to the right to the
/ not shown) input device 38 is running,

The final information pattern from hard and;
soft domains running in the direction of arrow 180
further into the input device 38. In operation
e long hard domains in the transport facility'- · '
and move into pole position 4 of the I-beam ■■

196 If a current φ
Find the hard domains at the end of the flows
j-Balkeiis 196 in pole position 1 of beam 186 ;
no attractive pole and consequently remain on; '

η are the pole position 4 of the I-beam 196. If
the TransportfelJ H continues to rotate, this Domae be ^
nen pulled into pole position 2 on the T-Balk.en 198; ; ■
Then they run on to the destroyer A. If necessary, the hard domains can also be transferred to another

₂ <i circuit for further use in an information system reversed ^; be switched. Hard domains in the €
Pole position 4 "of the I-beam 196 can therefore depend !?
of the presence or absence of the current ^ i _n Jf
continue loop 184. In this way, for g

w the passage of hard domains a gate circuit ^

created. Ig

During each cycle of rotation of the driving ;!

field H becomes a soft domain ^ by generator 178

generated. The soft domains run to the T-Baikeriti

«192 and follow one after the other the pole positions 2,3 ün <j: S

'4 to the transport device 182, after which they in the direction!
of the arrow 180 by rotating the propulsion field H§
keep walking to the right. However, if a hard
Domains successively through the pole positions 1.2 µm ($

3 of the T-bar 186 is running, can be a soft domain ^!
from the generator 178 does not move from the pole position 3 iivö
move pole position 4 on T-bar 192. At .
the next rotation of the driving field H moves ä $ ß
hence the domain of pole position 3 on the: »

T-bar 192 in pole position 4 (Knii) of the bar ;!
194. When the propulsion field // turns to face 1, | §
the soft domain continues in the knee of the L-beam I ^
included, and when the drift field H dan ||
continue in direction 2! turns, is at the knee of the L-beamff

194 creates a negative pole, which shows the '!
Domain collapse. This togetherness
fracture is increased when the driving field f ||
turns further to position 3. The presence of hartejfs
Domains on bar 186 therefore affects di | f |

Input of soft domains from generator 178 in ditfl

Transport device 182 and in this way is einff

Information pattern to the input device 38'f

sent. ; |

Other facilities for coding *

Information for a domain grid arrangement can ■
one for the production of hard and soft
Use domains. The transport tracks made of magnetically soft elements can, for. B. be replaced by a ladder pattern. One can also use stripe domains

with other methods hacking to domains with
different numbers of vertical Bloch lines,
that is, to create domains of different hardness.
The creation of domains with different

Prte bed iwci digiti Fig. 33 ited unc IT domains ichtung <i lus inform iichtung, arte Don; This inforn lur die hjomänen ichtung a esistiven 16 91 540 nformatic 1 Inform chtzersi / iau des u lin genes The M relays in iichtung c inerstron [.deliverd " . By c assing e esiutive content at · ient 210, ν t, the one / enn one ircl the tired dadur vorgeru paitungs. cnsiein an in the Abfüh js feeling frictional field ur After you icht in F rtederher: tn. A generation of lationsmu chnung b (lornänen »eichen M j tornänen. J, eichen D i luderdem; while (eiche Do! En T-BaIk 'olposition ieht, were

25th

Hardness also means that information with more than one digital value can be encoded and stored, pig, 33 shows a method for reading formation encoded by | arte and soft magnetic domains. A group of tough up «:! soft lornäncn has been removed from the grid 30 by the output device 40 . This pattern of information-carrying single wall domains continues in the direction of the arrow 198 to the discriminator 200 for red domains.

This discriminator 200 causes all soft domains 1 information patterns to collapse and thus only the hard domains to continue. These hard jomänen are then sensed by a Domänenabfühleinichtung, for example, by a _magneto-5 esistiven probe as such. B. is described in US Pat. No. 691,540. After the information has been sensed, the missing soft domains must be added again if the information pattern is to be read in a destructive manner. Therefore, a generator for soft domains is required to rebuild the original information pattern. The pattern of hard and soft domains arrives in the discriminator 200 for hard domains domains in [ichtung of the arrow 198. the discriminator consists of jiier current-carrying coil 202, the supplying of a current power source is connected, the current I ₁ -. testifies in the coil 202, a magnetic field with the same ihtung as the bias field Hb Thereby, the. The span field at pole position 4 of the I-beam 204 increases and all soft domains appearing at this point collapse, which means that hard domains continue to ripen further to the right over the it device 206 of T-beams and I-beams. .vs

The domains running through the guide device 206 emit a sensing device 208, which is shown as a magneto-optical sensor. This device 208 contains, for example, a magnetoresistive sensing element 210, which is connected to a current source 212 which generates a measuring current I _s in sensing element 210 , a domain passes through sensing element 210 , the magnetization vector of the element is rotated thereby causing a change in electrical resistance. This change in resistance is determined as a change in voltage V _s , which thus indicates the presence of a hard domain in the vicinity of the sensing element 210 in the vicinity of the flow coupling. If no domain passes sensing element 210 during a cycle time of the friction field H , it means that a soft domain was originally in this cycle time period. After sensing, the domains continue to run in the direction of arrow 214 and pass a recovery device 126 for soft domains. A similar device is used in FIG. 32 for the extraction of soft single-wall domains in the information pattern. This recovery preparation consists of a soft face generator 218 along with a layer of magnetic material 220 for suppressing hard faces. The transport device 222 introduces the domains into the information pattern stream. A domain destroyer 224 is then provided. During each cycle of the propellant field H , a domain is generated by the generator 218 and passed through into T-bars 222 . However, if a hard domain> ht in position 3 of T-bar 226, soft domains are generated by the generator

45

¹¹ 5 deflected to the knee of the destruction device 224 , where they are then destroyed when the propulsion field H continues to rotate. If, however, at this point in time there are no hard domains in pole position 3 of T-bar 226, soft domains generated by generator 218 run to transport device 206 and further to the right in the direction of arrow 214. Thus, the original combination of hard and soft domains is in restored to the pattern area. This restored information pattern can be sent to an input device 38 for input into the same or a different grid arrangement (FIG. 4) or to a destruction device for deleting the information. In addition, the domains can also be used for other circuits. The coding of domains according to the number of vertical Bloch lines present in their walls is a suitable method for representing information waves in the grid arrangement. However, since soft domains generally have greater mobility in magnetic medium 62 than hard domains, the operating speed of the data processing system should be limited to that of the hard domains in order to ensure synchronized domain movement.

Coding of domains by their deflection properties

Coded magnetic cylindrical single-walled mandrel pins which exploit the deflection properties were already proposed. The deflection of a magnetic cylindrical single wall domain in one Gradient magnetic field depends on the number of rotations of the magnetization vectors on the circumference the domain wall. A domain without vertical Bloch lines is e.g. B. deflected in the gradient field, while a domain is deflected or not with a pair of vertical Bloch lines, depending on the Sign of the Bloch line pair.

In the present application, the information can also be in domains in a grid arrangement be coded taking advantage of their deflection properties. Domains representing single bits can for example, can be represented by a domain that has a certain distraction in a has a magnetic gradient field while another information state (zero bit) through a domain that is experiencing a different distraction in this field.

F i g. 34 shows a device for generating domains with different deflection properties. F i g. 35 shows a device for sensing domains with different deflection properties, the were taken from the grid area.

In detail, FIG. 34 a generator 228 which generates domains with different deflection properties in a magnetic gradient field. This figure shows a writing device 230 which separates domains generated by the generator 228 according to their deflection properties in a magnetic gradient field. The domains from the writing device can be sent directly to an input device 38 for input into a grid arrangement 30.

The generator 228 is similar to the generator shown in FIG. 32 for generating hard and soft magnetic cylindrical single wall domains. It contains a coil 232 connected to a power source 234 , which is used to chop the stripe domain 236. The rest

of the generator 228 consists of a current-carrying coil 238, which is connected to a DC voltage source 240 and a pulse source 242 is connected. With the relay 244, the pulse source 242 is optionally with the Circuit connected. Also, conductors are 246 / 4,246S and 246C.

In operation, current pulses / |, h, and I ₃ create attractive magnetic fields in conductors 246/4 through 246C for moving domains into the area within coil 238. Current in coil 238 reduces the effective bias field within this loop, so that a cylinder domain present in this loop is pulled apart to form a stripe domain 236. After this stripe domain 236 is present in loop 238, a pulse of current / in conductor 232 is generated. This divides the domain 236, since different magnetic fields act on both sides of the domain 236. The divided domain then travels to the right under the control of transport 248, which is shown here as a series of T and I bars.

Domains running to the writing device 230 are converted into a magnetic field after they have been deflected Gradient field separated and in different "storage containers" for use as inputs into the Input device 38 stored.

The generator control 250 supplies current pulses in the conductor 252, which magnetic fields for selective Collapse of domains provided by generator 228.

A deflection device 254 contains two current-carrying conductors 256/4 and 256ß, which are connected to a current source 258 via controllable current limiting resistors Ra and R _B. The current source 258 can be controlled by the gradient controller 260.

The deflector 254 can be formed in a number of ways. Your job is to Generation of a gradient magnetic field and a bias field that deflect certain domains that move in the area where the gradient is present. The gradient generator is represented by live conductors. However, it can also contain other structures such as permanent magnets, which are intended for the delivery of various magnetic biases or layers contain magnetic material which is in exchange coupling with the magnetic layer 62 and corresponding Properties for setting up the graduate field hat. The magnetic properties of material 62 can also be changed locally to provide the basic structure.

Domains generated by the generator 228 run in the direction of arrow 262 until they reach position A. The pre-tensioning field at A is different from the field at point B , and the domes are deflected according to the rotational properties of their magnetic wall. In this drawing domains with a rotation of the wall magnetization of +1 are deflected upwards by the angle + o and sent in the space that is +1 container The Uczelchnung Null-Bchaiter weliergelellet, Domllnen with the rotation -1 of your Wnndimignotlslorung are deflected by an angle - (/ downwards and into a storage area with the designation - I - Dchllllcr wdtergcleiiei. These "Bllller" are conventional storage locations and can ■ / " Ii ₁ return

be coupled shift registers in which the various Circulating domains continuously.

The containers should contain the same number of domains pi of each type and the information should be optional can be switched from the containers to other data paths. However, since the generator only has one can generate statistical distribution of domains with different deflection properties is; .one Circuit provided to monitor the point in time at which each container is fully loaded. If ^ a If the container is fully loaded, other domains with similar ^ properties are brought via the provided facilities, that would normally run into this container, to breakdown. This process approx continued until all containers are full of the mandrel |! j.en are supplied, this should be saved. . ^,

A switch belongs to each container .S.W | H SlV-O, SVV-1. These switches are under Stepjflg the decoder switch controller 264 operates each domain in one of two directions, depending on d $ |> n, whether these can be taken from the container or should then circulate again. As a switch are üttlÄ Current control switch suitable as z. B. in ^ den U.S. Patents 36 89 902 or 37 01 125 besc | next are. ΐ |

Each storage container has a formwork for counting the number of thorns entering the container and a circuit for destroying the domain ^ ;?) «: still want to enter the container after it has already been filled. ■. % ■

In general, this circuit contains a counter which counts the number of thorns entering the container, as well as a power source for generating a current whose magnetic field is sufficient to collapse undesired domains in the direction of the container. The +1 counter with the associated collapse current generator 266 + 1 is z. B. connected to the container +1. This counter detects domains with a deflection + P ψ ^{ the conductor loop 268 +1. After the number of domains required to fill the + 1 container has been counted, the device 266 + 1 supplies a current pulse in the +! - conductor 268 + 1, which then destroys subsequent domains that want to enter the + -! - container. Similarly, the zero bucket includes a zero counter and a current generator 266-0 that runs over; the neutral conductor 268-0 is coupled to the null domain transport path. A -1-counter and a -1-together ¹ "" ¹ * '"current generator 266-1 and a -! • conductor';! which, when the input signal is combined, emits a signal in the signal 250. In response to this signal, generator control 250 generates a current pulse 252 which stops the forwarding of domains in arrow 262

The counters and breakdown current generators also send sound signals to the clock cycle 272, which in turn actuates the encoder school. The clock circuit 272 delivers e.ln || '<srn mi the Decodlerschnltstcucrung 264 nnchqfljM "signals from" Ilen Sehulteinrlchtungcn 266 cHipfPJF hat to the Decodicrschaltstcucrung 264 mWm could be men 'ANQ now Domllnen from all SpcicherbclrtilternpmiJO "' In this way knriiriF ¹ optional coded Domlincn from the Spclcn. '' ^r Forwarding in the direction of arrows 274 removed. _(:

Fig. Domain to the 1 with and represent tern 27f

To the

Distractions Definie. Materia of the Gil undercl mänen ι stable 'behave manner v »It is dargesu tung we. Fig .: cylindris of their ab z. B. domain 254 shown above is. This and 256j Stromquung 26 Determine current in Vond through the distraction through the tenfcld separates. 276-0 sensations The / 280 + 1, magnet! lent him dcnscin zu versc provides Abhang Domlln will nn eiii 'become Nach or zi Grids gcspc'ic the doi be gcnerti Distract /, el Wa η rcn to

111 Il g IK

half in a hurry smaller

BS33SS3SSE

to input 38. Unwanted domains with other deflection properties than for information

To move from
Distracting abilities can be used by J
use power circuits. ^ SSS ^ solutions can _e ^a « ^De £ ^em ^^^ _mag ^g _ne iic defining the path of the, D ° ™ ^{nen m} £ _η % _1τΗηβ , be _{combined in} material. If they are einma the grid configuration also see the different nm AW ^ '^ ⁿ taffetas "the ten Do mänen mite.nander in AC Pow k e ™ ⁿ f ^ un. ^ stable trajectories. .? The Sun ~ ^{dl "th ü} ° J ⁿ _h ⁿ _r behave s.ch within the grid therefore gle.cne way as the non-coded domains.

It is possible to use some of the in Fig. 3J for shown components in a w.rkl.chen omission.

F i g. 35 shows a device for Le

cylindrical * ™ ^^^ ™ X% JXSri! i of their deflecting properties. In this device w. Α

r. B. cm Mus he supplied from the Ausgabeemnchtung 40 of the m F ■ E- data processing system shown in Figure 2 of domains, which "do not an ^Al

is. This deflection device 254 contains ^ Le.t ^ «λ and 256ß, which snjd connected via the resistors R ,, unc> each with ^a power source 258 . ^D 's Gra ^ tion 260 outputs signals to the ^s "romquelle

Determination of the strength of the OäjSS StromindenLe.tern256Mu

aurcn uic biuuvi, i _U „ _B

Deflection properties. This

through that through the rub

tenfold according to their nuiui ^, _e v ".., ..

separates. Various transport circuits _.

276-0 and 276-1 move the domains to one

■ - t + ta

S-rSSsssBS

according to their distracting abilities.
5

Coding by domain difference, safe in size

Magnetic cylindrical single wall domains with

_{| 0 of} different sizes can be used simultaneously in the magnetic

table medium exist. These different domains can be generated by a suitable generator

_{and are} also very easy to _{be turned} into another type ^ _again ^^

Generator 284, with the

, 5 £ * _zy | _single wall domains with min-

_d * _two different sizes in one magnet.

_Me medium 62 can be generated. This

_{As a result, domains of different} sizes are

_{sen referred to as} ^ domains and ß domains, where

% _{ie A. Domes} appear visually larger. the

™ _{mmm 2M hcsl} ^ _{{ from a} live coil

_{286 di one} | _mpu | _S power source 288 via a

Variable resistor R is connected. The coil 286 is intended

^ a ' localized magnetic field in one direction

", _Zup , the _{axis of} magnetization

pra P _{medium) depending on the}

j ^^ ^ _{veriftuft the mj (this Spu) e}

_ralle magnetic field either in parallel or, ^g, * ν _to the _applied magnetic bias _{DJE "e} ^ _{0 erzeug (Emc is} fc ^ ₁ ^ _{dn jn level dcr}

™ · «^ _{Medium rotating} propellant H for

_Movement of domains in connection with the

_M weSmag ^g _n etic transport device 294. The

,., _SXQWr ^ _nchmg 296 supplies control signals to de

Impu.sstromque.le 288 and the Magnetfe.dque.len 290

"" Stripe domains 298 exist throughout the magnetic medium 62 when it is demagnetized. _A current pulse applied _to coil 286 _{chops Strc} if _C ndomancn 298 into segments, of which engc

4 domains and other ß-domains are. Under

KSSS - ÄS? ¹ -, TIa

_ZwccR ^ _{((n djc y | e 2g6 c | St} , _m ,

_ang0 | _egl , which by its polarity is a magnet

S ₈ ? "which sets the direction of magnetization "

_{Te || e} j%, _{ner A. Do} mllnc reverse in the opposite direction

Direction of magnetization of the magnet

see medium 62). Thus an xl-DomUnc In becomes a «

0-Domltnc converted that is not through the gonzi

_lischc shchchi extends through it or a « megn ^ _{| wi n | ge | nc M. Cathedral} "

"" _{Dic Amplllude} S ₀₈ current pulse for re-schooling oi

the type of dome is chosen so that the impulse ei

Spltzcnmngnctfc1 suitable for this conversion

_{lm mo dcr fü | l mngnel} | _{iehe zy} | nclrisch

_Elt1Z elw _n nddomHncn «""«"«»'" «« ⁰ ,'""«"«" ^s an amplitude of about 50 to 100 Oc suitable, Mn

Use if the pulse duration is around 10 MIIlI seconds. When using a pulse train, _{(|| ü} ^ ₁₁₀₁₁ , _{dlcse! J} | _{m |} , _U | _SZ ugcs / wischen IO un

mt / t M iiAii *

244! 280

100 cycles per second. The idea behind the method is that by chopping up the stripe domains, domains of type A and type β are generated in the region of coil 286 , and that by switching the polarity of a pulse of suitable amplitude, one domain type is converted into the other and vice versa.

In order to convert a type B domain to a type A domain, a current pulse is applied to the coil 286 with a polarity such that a magnetic field is generated, the direction of which is opposite to the direction of the bias magnetic field Hb. The pulsed magnetic field generated by the current in coil 286 rotates the direction of magnetization of medium 62 in the area under a type B domain. This creates a type A domain that extends across magnetic medium 62. The same six ohm pulse values are suitable for this purpose as for the conversion of a type A domain into a type B domain, i.e. the same parameters apply for amplitude, duration, frequency, etc.

A discharge device 302 determines whether a continuous domain belongs to type A or type B. In this case, the sensing device 302 consists of a sensing element 304, which can be a magnetoresistive sensor, for example. A current source 306 supplies a measurement current I ₅ through element 304 and a voltage signal V ₅ is generated at element 304 when a domain passes close by. The strength of this signal changes depending on whether a type A or type B domain is being sensed. This distinction is clearly made by the controller 308, which accordingly supplies a control stream in the conductor 310 in order to collapse domains belonging to the undesired type. Therefore, a pattern of domains moves in the direction of arrow 312 to an input device 38 or to another circuit for storing different types of domains, as was shown, for example, in FIG. 34 for domains with different deflection properties.

Figure 36 also illustrates a method of reading domains of various sizes which can be used to determine the information extracted from grid 30. When the domain pattern moving in the direction of arrows 300 e.g. For example, if the pattern of domains is from a row in the filter extracted from the grid by transfer register 154 and shift register 156 (FIG. 29), a sensing device 302 can easily be used. When viewed optically, the domains of type A and type B also have a different size, so that they can also be read by means of a customary optical method, for example in polarized light by utilizing the Kerr effect or the Faraday effect.

Another suitable sensor is a conductor loop, the different types of domains pass by. The Leitorschleifo feels a flow through the large Λ-domunes from the river change differs by the smaller Ä domllnen. the oscillating cooling can be used as well.

The coding in domains with different Size can cause some problems in forming more regular Raise the grid if the sizes of the single wall are not reasonably close to one another

This type of encoded domains can be used in a considerable number of lattice systems. ^i; * ^; ^

Coding by the magnetizing rotary sirin ||

In the IBM Technical Disclosure Bulletin, Vol. 13,; §f§ Page 3021, (March 1971) there is an article νοη ^ Henry with the title "Magnetic Domain ^ Information Storage", in which the author stated ||| the different rotational positions of the magnetizing be used · in the walls of Einzeiwanddomänen on) to store information to use koji Instead the absence or presence of m See cylindrical single wall domains to tion representation, is Sugg the right-wing or left-wing M here | ^ to use the direction of rotation for this purpose. InförrnXÖpp can be read out, for example, by adding rnäi} Ä unknown domains at high speed to a "reference domain" with known magnets || direction of rotation collide. The inertial mpg of the domain wall drives the domains into one. «]! ¹ touch and if they have the same direction of rotation they bounce apart. If they turn in the opposite direction, they grow together. The ejcisti of one or two domains after the collision; thus an indicator for the magnetization rotation, hereinafter referred to as M-direction of rotation for short, the unfettered domain. <

With this method, information can be obtained from magnetic cylindrical single wall domains encoded in this way into the grid arrangement 30. An absolutely stable domain state can have a spine wall configuration with purely right-hand alignment. Left-hand alignment of the M direction of rotation according to the development in FIGS. 37A and 37B. Have here. Single wall domains BD domain walls 313, in which the direction of magnetization is shown by the arrow. The right-hand M direction of rotation «F i g. 37 A, the left-facing one in FIG. 37B, ^ - '

Another way of differentiating between cylindrical single wall domains with M rotational direction either to the left or to the right works with a Hegel magnetic field in the layer plane, which is shown in FIGS. 37A and 37B is designated as magnet H * . This magnetic field caused; Precession movement of the MagnctisicrungsveWöt 314 in the walls of the domains BD, so that the domes move in a direction parallel or antlpi to the magnetic field H _x . The domain in ;; F _f Ij moves e.g. B. In the direction of arrow 316. $ # Pulse H, is applied while the Döm§QI Fig.37B moves in the direction of arrow 318 bol'ApJ of pulse H. The domains with. rap right or left gorichtotom M-Drehslnn Kf, thus can be differentiated by observing their c-Yej bungon when present in the plane HoJ M agnetfolclimpulsos. ■.,.!.

FI g. 38 the shape zoigt olnos for dlo VorschlebuM domains with pure M-Drohsuin suitable Mt already Foldlmpulsos H * For Anslieg "e |? G Abfallzoit the pulse H 'door his Vei'wendun | Uson of domains coded in the M-Drehsinn * certain requirements. The optimal amplitude of the pulse H, is, for example, about 8Mk where " _{b is} magnetization of the magnetic domains". The rate of increase dos Impulses H » should be small ¹

where girl? Ice re η

die: die: dor

or sole bun Ma

Vor sch (möi Vor reel ten And von der Bre seht mul G rs zur

Voi II

I.es Doi

^at ¥ the the

than the approximate value

where <x is the damping coefficient of the single wall domain material and γ is the gyromagnetic constant of the material. For a practically available rare earth iron garnet material with lower loss

{γ = 1.7 χ 10 ⁷ sec -'Oe, α = ΙΟ " ² , H _c = 0.30Oe, Mj = 20Gauss), this value is approximately 30 nanoseconds.

The fall time of the pulse H _x should be a multiple of this maximum permissible rise time. Under these assumptions, the single wall domain shift produced by H _{x is approximate}

or several micrometers for garnet. With a chain of such impulses one achieves a cumulative shift. From these magnitudes it can be seen that materials with higher damping coefficients are more desirable are. Such a requirement is not due to the saturation rate effects in the materials detrimental factor for the speed of the single wall domains.

It has been found that a pulse of the bias magnetic field Hb perpendicular to the plane of the magnetic material can affect the M-rotation state of the single wall domain. Changes in the magnetic bias field can therefore lead to a switch from the right-hand M direction of rotation to a left-hand one and vice versa. In general, a change in the bias field extends to the approximate size of 2n <xM _s ani./h to change to the information state of the single wall domain. Here is Am. is the width of a Bloch line and h is the thickness of the magnetic material. The device built as a reading device must therefore be carefully designed so that gradients in the magnetic field bias perpendicular to the magnetic layer do not occur. Therefore be used in the devices shown Fig.39 and 40th

In Fig. 39, the magnetic material 62 is surrounded by a current-carrying coil 320 which, as part of an optical device, serves to determine the M-rotation of a domain and thus the information status . The coil 320 is connected to a current source 322 which supplies a current / ». The current in coil 320 builds up a new pulse field H _x in the plane of medium 62.

In operation, the magnetic InfTptflsfeld H _x causes a movement of the single wall domain BD in the direction of arrows 316 or 318, depending on the M rotation state of the single wall domains. The detectors 322Λ and S 322Ö, for example magnetoresistive detectors, determine the M rotational position of the domains and are each connected to a user device 44.

As the amplitude of the magnetic pulse H _x decreases with time, the magnetization vectors 314 are subject to a reverse precession motion compared to the original, and consequently the single wall magnetic domains are now moving backwards. These different movements of the domains with different M directions of rotation when the magnetic field pulse is applied can be observed with a microscope, for example.

With live coils it is difficult to get magnetic pulses with sufficiently short rise times. The in F i g. 40 therefore uses conductor strips to generate an in-plane magnetic field with a sufficiently short build-up time. In FIG. 40, a relatively wide conductor 324 is connected to a current source 326 which supplies the current I _x. Conductors C and C are connected to power source 328

2> connected via resistors R and R ' . The current sources 326 and 328 are switched with the control device 330.

The basic magnetic field H _x in the plane is built up by the current /, in conductor 324 . To the

To keep the gradients in the magnetic biasing field perpendicular to the plane of the magnetic material 62 as small as possible, the current in the conductors C and C "builds up magnetic fields, which each gradient magnetic field in the area under the conductor 324 where the M direction of rotation

3s should be determined, want to cancel. The M-direction of rotation is precisely determined and not switched by magnetic interference pulses in the z- direction or by gradients in the ^ -direction of the magnetic field.

The device shown in FIG. 34 can have single-wall magnetic domains with pure M rotation states deliver. By applying magnetic field pulses become perpendicular to the magnetic material Stripe domains split and domains with pure

. (s generated. M-rotation. This can apparatus shown 34 are separated from other domains by g with the in F i. observed the minimum deflection in a gradient magnetic field. Furthermore, one can domains with a M-rotation in domains with switch to the other M direction of rotation by applying magnetic field pulses perpendicular to the magnet 'layer 62 if this function is desired.

In addition 17 blood drawings

Claims (15)

Patent claims: ϊΐ. Mass memory for information represented by magnetic single-wall domains, which consists of a monocrystalline or amorphous and ferromagnetic or ferriroagnetic thin layer, called a storage layer, with the associated writing and reading devices, which is under the influence of a magnetic support field to stabilize the magnetic single-wall domains, _{characterized in that magnetic single wall domains of} different magnetic and / or shape properties are used to display information, that under a given magnetic field gradient effect as an external force, magnetic single wall domains are enclosed in given defined storage layer areas in such a way that they internal interaction forces with the external due to the mutual repulsion of the magnetic single wall domains J0 Force are in equilibrium, so that a domain layer lattice is created, the lattice sites of which lie in a hexagonal pattern completely with Mag netic single wall domains are occupied, and that the magnetic field gradient with the help of the writing and reading devices at the edge zones of the said storage layer areas for storage input and output while maintaining the full occupancy of the grid spaces in the direction of one or more of the perpendicular and / or parallel to the in the domain layer lattice around 60 ° offset from one another, single wall domain rows or columns can be changed. 2. Mass storage device according to claim 1, characterized in that the limitation of a respective Storage layer area a parallelogram Provides domain lattice. 3. Mass storage device according to claim 1 and / or 2, characterized in that the limiting device consists of electrical conductors arranged on the storage layer, whose flowing through Currents provide the magnetic field gradient. 4. Mass storage device according to claim 1 and / or 2, characterized in that the limiting device of strip elements made of magnetic materials arranged on the storage layer consists. 5. Mass storage device according to claim 1 and / or 2, characterized in that the limiting device consists of areas of or in the storage layer, their magnetic properties are locally changed compared to those of the storage layer. 6. mass storage device at least according to claim 1, characterized in that the existence of magnetic cylindrical single-wall domains in the storage layer necessary support field in the entire storage layer {! is slightly or uniformly effective. 7. Mass storage device according to claim 1 to 5, characterized in that the for the existence of magnetic cylindrical single wall domains in the storage layer necessary support field in different Areas of the storage layer with different field strength is effective. 8. Mass storage device according to claim 7, characterized in that the field strength of the supporting field is less in the area of a domain layer lattice than outside. 9. mass storage device at least according to claim 1, characterized in that devices for Input and output of domain rows and columns in and out of the layered grid area are provided, which consist of at least two parallel conductor arrangements, which apply the necessary changes in the magnetic field gradient by means of time-staggered current pulses, to move a domain row or column at the same time. 10. Mass storage device according to claim 9, characterized in that the operation of an input device can be converted into the operation of an output device by changing the current pulses and vice versa. 11. mass storage device at least according to claim 1, gekennzeicbnel that in the writing device means for encoding the single wall magnetic domains by their different ones Wall magnetization is provided. 12. Masserispeicher according to claim 11, characterized in that the coding device has devices contains in order to create single wall domains, db a different number of vertical Bloch lines included in the domain wall. 13. Mass storage device according to claim 11, characterized in that the coding device has devices to generate single wall domains which are in a directional magnetic field have different deflection properties with respect to their movement in the storage layer. 14 mass storage device according to claim 11, characterized in that the coding device has devices to generate single wall domains which have different chiralities of wall magnetization exhibit. 15. Mass storage device according to claims 1 to 14, characterized in that in the reading device means for sensing and recognizing different wall magnetization properties of the single wall domains is provided.